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1. 发明授权

US09159418B1 High density stacked CNT memory cube arrays with memory selectors 有权
标题翻译：具有存储器选择器的高密度堆叠CNT存储器立方体阵列
公开(公告)号：US09159418B1
公开(公告)日：2015-10-13
申请号：US13301521
申请日：2011-11-21
申请人： Jonathan W. Ward , Adrian N. Robinson , Garo J. Derderian
发明人： Jonathan W. Ward , Adrian N. Robinson , Garo J. Derderian
IPC分类号： G11C11/00 , G11C13/02
CPC分类号： G11C13/025 , G11C13/003 , G11C2213/17 , G11C2213/33 , G11C2213/70 , G11C2213/71 , G11C2213/76 , H01L51/0048 , H01L51/0591
摘要： A three-dimensional (3-D) memory stack and a method of formation thereof are described. The 3-D memory stack includes a number of vertically stacked memory devices. Each memory device includes one or more memory cells. Each of the memory cells can be formed on a conductive material. Each memory device further includes one or more selector elements each configured to couple a memory cell of the one or more memory cells to a respective bit line. None of the selector elements is configured as a diode or a transistor element.
摘要翻译：描述三维（3-D）存储器堆栈及其形成方法。 3-D存储器堆叠包括多个垂直堆叠的存储器件。每个存储器件包括一个或多个存储器单元。每个存储单元可以形成在导电材料上。每个存储器件还包括一个或多个选择器元件，每个选择器元件被配置为将一个或多个存储器单元的存储器单元耦合到相应的位线。没有选择器元件被配置为二极管或晶体管元件。

2. 发明授权

US08253171B1 Two terminal nanotube switch, memory array incorporating the same and method of making 有权
标题翻译：两端子纳米管开关，内存阵列及其制作方法
公开(公告)号：US08253171B1
公开(公告)日：2012-08-28
申请号：US12857494
申请日：2010-08-16
申请人： Garo J. Derderian , Michael J. O'Connor , Adrian N. Robinson , Jonathan W. Ward
发明人： Garo J. Derderian , Michael J. O'Connor , Adrian N. Robinson , Jonathan W. Ward
IPC分类号： H01L27/118
CPC分类号： B82Y10/00 , H01L27/2436 , H01L27/2463 , H01L29/413 , H01L45/04 , H01L45/1226 , H01L45/149 , H01L45/1641
摘要： A two terminal switching device includes a first conductive terminal, a second conductive terminal in spaced relation to the first terminal, the first terminal encompassed by the second terminal. The device also includes an electrically insulating spacer that encompasses the first terminal and provides the spaced relation between the second terminal and the first terminal. It also includes a nanotube article comprising at least one carbon nanotube, the nanotube article being arranged to overlap at least a portion of each of the first and second terminals. The device also includes a stimulus circuit in electrical communication with at least one of the first and second terminals that is capable of applying a first electrical stimulus to at least one of the first and second terminals to change the resistance of the device between the first and second terminals from a relatively low resistance to a relatively high resistance.
摘要翻译：双端开关装置包括第一导电端子，与第一端子间隔开的第二导电端子，由第二端子包围的第一端子。该装置还包括电绝缘间隔件，其包围第一端子并且提供第二端子和第一端子之间的间隔关系。其还包括包含至少一个碳纳米管的纳米管制品，所述纳米管制品被布置成与所述第一和第二端子中的每一个的至少一部分重叠。该装置还包括与第一和第二端子中的至少一个电连通的刺激电路，其能够对第一和第二端子中的至少一个施加第一电刺激，以改变装置在第一和第二端子之间的电阻第二端子从相对较低的电阻到相对较高的电阻。

3. 发明授权

US08618662B1 Devices containing carbon nanomaterial electrical interconnects overcoated with metal nitride films and methods for production thereof 有权
标题翻译：包含用金属氮化物膜覆盖的碳纳米材料电互连的装置及其生产方法
公开(公告)号：US08618662B1
公开(公告)日：2013-12-31
申请号：US13398771
申请日：2012-02-16
申请人： Garo J. Derderian , Jonathan W. Ward
发明人： Garo J. Derderian , Jonathan W. Ward
IPC分类号： H01L21/44
CPC分类号： H05K3/28 , B82Y10/00 , B82Y99/00 , H01L21/76834 , H01L21/76862 , H01L23/53276 , H01L23/573 , H01L29/0669 , H01L51/0048 , H01L2221/1094 , H01L2924/0002 , H05K1/09 , H01L2924/00
摘要： Metal nitride coatings containing carbon can be either electrically conductive or substantially non-conductive depending on the degree to which they have been exposed to an oxidative environment. Substantially non-conductive metal nitride coatings can be used as protective layers in electrical devices. Particularly in an electrical device containing carbon nanomaterials, the metal nitride coatings can be used to mask the device's operational characteristics. Such devices can contain an electrical interconnect containing a carbon nanomaterial and a substantially non-conductive coating on the carbon nanomaterial. The substantially non-conductive coating can contain at least one substantially non-conductive metal nitride layer and at least some carbon. Methods for making such devices and metal nitride coatings are also described herein.
摘要翻译：包含碳的金属氮化物涂层可以是导电的或基本上不导电的，这取决于它们暴露于氧化环境的程度。基本上不导电的金属氮化物涂层可用作电气设备中的保护层。特别是在含有碳纳米材料的电气装置中，金属氮化物涂层可用于掩蔽该装置的操作特性。这种装置可以包含在碳纳米材料上含有碳纳米材料和基本不导电的涂层的电互连。基本上不导电的涂层可以包含至少一个基本上不导电的金属氮化物层和至少一些碳。本文还描述了制造这种装置和金属氮化物涂层的方法。

4. 发明授权

US08604459B1 Electrical devices containing a carbon nanotube switching layer with a passivation layer disposed thereon and methods for production thereof 有权
标题翻译：包含其上设置有钝化层的碳纳米管切换层的电气装置及其制造方法
公开(公告)号：US08604459B1
公开(公告)日：2013-12-10
申请号：US13491550
申请日：2012-06-07
申请人： Jonathan W. Ward , Garo J. Derderian
发明人： Jonathan W. Ward , Garo J. Derderian
IPC分类号： H01L29/06
CPC分类号： H01L29/0673 , B82Y10/00 , H01L51/0048 , H01L51/0558 , H01L51/107
摘要： Electrical devices containing carbon nanotubes can be passivated to protect the carbon nanotubes from degradation while substantially preserving the carbon nanotubes' electrical conductivity and switching characteristics. Such electrical devices can include a first metal contact, a switching layer containing a plurality of carbon nanotubes disposed on the first metal contact, a passivation layer containing amorphous carbon, a metal carbide, or any combination thereof that is disposed on at least a top surface of the switching layer, and a second metal contact disposed upon the passivation layer. Methods for forming the electrical devices can include disposing a passivation layer containing amorphous carbon on at least a top surface of the switching layer, and optionally heating to at least partially convert the amorphous carbon within the passivation layer into a metal carbide.
摘要翻译：可以钝化包含碳纳米管的电子器件以保护碳纳米管免受降解，同时基本上保留碳纳米管的电导率和开关特性。这样的电气装置可以包括第一金属触点，包含设置在第一金属触点上的多个碳纳米管的开关层，包含无定形碳的钝化层，金属碳化物或其任何组合，其设置在至少一个顶表面以及设置在钝化层上的第二金属触点。用于形成电气装置的方法可以包括在开关层的至少顶表面上设置含有无定形碳的钝化层，以及任选地加热至少部分地将钝化层内的无定形碳转化为金属碳化物。

5. 发明授权

US08125824B1 Nanotube random access memory (NRAM) and transistor integration 有权
标题翻译：纳米管随机存取存储器（NRAM）和晶体管集成
公开(公告)号：US08125824B1
公开(公告)日：2012-02-28
申请号：US12875044
申请日：2010-09-02
申请人： Jonathan W. Ward , Adrian N. Robinson , Scott Anderson
发明人： Jonathan W. Ward , Adrian N. Robinson , Scott Anderson
IPC分类号： G11C11/34
CPC分类号： G11C13/025 , B82Y10/00
摘要： A nanotube random access memory (NRAM) structure is provided. The structure includes a substrate, a gate electrode disposed in the substrate, and a first nanotube fabric disposed on the substrate. The first nanotube fabric has a channel region spaced apart from the gate electrode by a portion of the substrate. The structure also includes a drain contact contacting the first nanotube fabric. The structure also includes a second nanotube fabric disposed on the substrate, and is adjacent and connected to the first nanotube fabric. The structure also includes a source contact contacting the second nanotube fabric. The first nanotube fabric is a high-voltage fabric compared to the second nanotube fabric such that when a voltage is applied across the first nanotube fabric and the second nanotube fabric via the drain contact and the source contact, the second nanotube fabric is permitted to switch without switching the first nanotube fabric.
摘要翻译：提供了纳米管随机存取存储器（NRAM）结构。该结构包括衬底，设置在衬底中的栅电极和布置在衬底上的第一纳米管织物。第一纳米管织物具有通过衬底的一部分与栅电极间隔开的沟道区。该结构还包括接触第一纳米管织物的漏极接触。该结构还包括布置在基底上并与第一纳米管织物相邻并连接的第二纳米管织物。该结构还包括接触第二纳米管织物的源极接触。与第二纳米管织物相比，第一纳米管织物是高电压织物，使得当经由漏极接触和源极接触跨越第一纳米管织物和第二纳米管织物施加电压时，允许第二纳米管织物切换而不切换第一纳米管织物。

6. 发明授权

US08937575B2 Microstrip antenna elements and arrays comprising a shaped nanotube fabric layer and integrated two terminal nanotube select devices 有权
标题翻译：微带天线元件和阵列包括成形纳米管织物层和集成的两个末端纳米管选择装置
公开(公告)号：US08937575B2
公开(公告)日：2015-01-20
申请号：US12533687
申请日：2009-07-31
申请人： Jonathan W. Ward , Robert F. Smith , Brent M. Segal
发明人： Jonathan W. Ward , Robert F. Smith , Brent M. Segal
IPC分类号： H01Q1/38 , H01Q21/08 , H01Q9/04
CPC分类号： H01Q9/0407 , H01Q21/08
摘要： A nanotube based microstrip antenna element is provided along with arrays of same. The nanotube based microstrip antenna element comprises a dielectric substrate layer sandwiched between a ground plane layer and a conductive nanotube layer, the conductive nanotube layer shaped to form a radiating structure. In more advanced embodiments, the nanotube based microstrip antenna element further includes an integrated two terminal nanotube switch device such as to provide a selectability function to such microstrip antenna elements and reconfigurable arrays of same. Anisotropic nanotube fabric layers are also used to provide substantially transparent microstrip antenna structures which can be deposited over display screens and the like.
摘要翻译：基于纳米管的微带天线元件与其阵列一起提供。纳米管微带天线元件包括夹在接地平面层和导电纳米管层之间的电介质基底层，形成为形成辐射结构的导电纳米管层。在更先进的实施例中，基于纳米管的微带天线元件还包括集成的二端子纳米管开关器件，以便为这种微带天线元件和可重构阵列提供可选择性功能。各向异性纳米管织物层也用于提供基本上透明的微带天线结构，其可以沉积在显示屏等上。

7. 发明授权

US08400053B2 Carbon nanotube films, layers, fabrics, ribbons, elements and articles 有权
标题翻译：碳纳米管膜，层，织物，丝带，元件和制品
公开(公告)号：US08400053B2
公开(公告)日：2013-03-19
申请号：US12136624
申请日：2008-06-10
申请人： Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
发明人： Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
IPC分类号： H01J63/04
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L27/10 , Y10S977/724 , Y10S977/742 , Y10S977/796 , Y10S977/856 , Y10S977/888 , Y10S977/943 , Y10T428/24893 , Y10T428/24917
摘要： Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. To make various articles, certain embodiments provide a substrate. Preformed nanotubes are applied to a surface of the substrate to create a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric are selectively removed according to a defined pattern to create the article. To make a nanofabric, a substrate is provided. Preformed nanotubes are applied to a surface of the substrate to create a non-woven fabric of carbon nanotubes wherein the non-woven fabric is substantially uniform density. The nanofabrics and articles have characteristics desirable for various electrical systems such as memory circuits and conductive traces and pads.
摘要翻译：公开了碳纳米管薄膜，层，织物，丝带，元件和制品。为了制造各种制品，某些实施方案提供了基材。将预制的纳米管施加到基底的表面以产生碳纳米管的无纺织物。根据限定的图案选择性地去除无纺织物的部分以产生制品。为了制造纳米纤维，提供了基材。将预制的纳米管施加到基底的表面以产生碳纳米管的无纺织物，其中无纺织物具有基本均匀的密度。纳米材料和制品具有对各种电气系统（诸如存储电路和导电迹线和焊盘）所期望的特性。

8. 发明授权

US08217490B2 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权
标题翻译：非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法
公开(公告)号：US08217490B2
公开(公告)日：2012-07-10
申请号：US11835856
申请日：2007-08-08
申请人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
发明人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
IPC分类号： G11C11/56 , G11C5/00 , H01L29/00
CPC分类号： H01L27/1021 , B82Y10/00 , G11C13/025 , G11C2213/19 , G11C2213/71 , G11C2213/72 , H01L21/8221 , H01L27/0688 , H01L27/1203 , Y10S977/943
摘要： Under one aspect, a non-volatile nanotube switch includes a first terminal; a nanotube block including a multilayer nanotube fabric, at least a portion of which is positioned over and in contact with at least a portion of the first terminal; a second terminal, at least a portion of which is positioned over and in contact with at least a portion of the nanotube block, wherein the nanotube block is constructed and arranged to prevent direct physical and electrical contact between the first and second terminals; and control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube block can switch between a plurality of electronic states in response to a plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube block provides an electrical pathway of different resistance between the first and second terminals.
摘要翻译：在一个方面，非挥发性纳米管开关包括第一端子; 纳米管块，其包括多层纳米管织物，其至少一部分位于所述第一端子的至少一部分上方并与其接触; 第二端子，其至少一部分定位在所述纳米管块的至少一部分上方并与所述纳米管块的至少一部分接触，其中所述纳米管块被构造和布置成防止所述第一和第二端子之间的直接物理和电接触; 以及能够向第一和第二终端施加电刺激的控制电路。响应于由控制电路施加到第一和第二端子的多个电刺激，纳米管块可以在多个电子状态之间切换。对于每个不同的电子状态，纳米管块提供在第一和第二端子之间具有不同电阻的电路径。

9. 发明授权

US08115187B2 Triodes using nanofabric articles and methods of making the same 失效
标题翻译：使用纳米制品的三极管和制造相同的方法
公开(公告)号：US08115187B2
公开(公告)日：2012-02-14
申请号：US12124475
申请日：2008-05-21
申请人： Brent M. Segal , Jonathan W. Ward , Thomas Rueckes
发明人： Brent M. Segal , Jonathan W. Ward , Thomas Rueckes
IPC分类号： H01L29/02
CPC分类号： H01J21/10 , H01J3/021 , H01J19/38 , H01J2203/0232 , Y10S977/742
摘要： Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that include three-terminals (an emitter, a grid and an anode), and also higher-order devices such as tetrodes and pentodes, all of which use carbon nanotubes to form various components of the devices. In certain embodiments, patterned portions of nanotube fabric may be used as grid/gate components, conductive traces, etc. Nanotube fabrics may be suspended or conformally disposed. In certain embodiments, methods for stiffening a nanotube fabric layer are used. Various methods for applying, selectively removing (e.g. etching), suspending, and stiffening vertically- and horizontally-disposed nanotube fabrics are disclosed, as are CMOS-compatible fabrication methods. In certain embodiments, nanotube fabric triodes provide high-speed, small-scale, low-power devices that can be employed in radiation-intensive applications.
摘要翻译：提供具有碳纳米管膜，层，带和织物的真空微电子器件。本发明公开了包括三端（发射极，栅极和阳极）的三极管结构的微电子真空装置，以及诸如四极和五极管的高阶器件，所有这些都使用碳纳米管来形成设备。在某些实施例中，纳米管织物的图案化部分可以用作栅极/栅极部件，导电迹线等。纳米管织物可以悬挂或保形地设置。在某些实施例中，使用用于加强纳米管织物层的方法。公开了用于施加，选择性地去除（例如蚀刻）悬浮和加强垂直和水平布置的纳米管织物的各种方法，以及CMOS兼容的制造方法。在某些实施例中，纳米管织物三极管提供可用于辐射密集型应用中的高速，小规模，低功率的器件。

10. 发明申请

US20110083319A1 METHODS OF MAKING NANOTUBE SWITCHES 有权
标题翻译：制备纳米管开关的方法
公开(公告)号：US20110083319A1
公开(公告)日：2011-04-14
申请号：US12953076
申请日：2010-11-23
申请人： Claude L. Bertin , Brent M. Segal , Thomas Rueckes , Jonathan W. Ward
发明人： Claude L. Bertin , Brent M. Segal , Thomas Rueckes , Jonathan W. Ward
IPC分类号： H01H11/00 , B82Y40/00
CPC分类号： H01L23/62 , B82Y10/00 , G11C13/025 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01L23/60 , H01L27/0248 , H01L27/0251 , H01L51/0048 , H01L2224/16 , H01L2924/01019 , H01L2924/0102 , H01L2924/01025 , H01L2924/01046 , H01L2924/01066 , H01L2924/01068 , H01L2924/01077 , H01L2924/01079 , H01L2924/09701 , H01L2924/12044 , H01L2924/19103 , H01L2924/19104 , H01L2924/19105 , H01L2924/3011 , H05K1/0259 , Y10T29/49105 , Y10T29/49117 , Y10T29/49124 , Y10T29/49204
摘要： Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches. An electrostatic discharge (ESD) protection circuit for protecting a protected circuit is coupled to an input pad. The ESD circuit includes a nanotube switch electrically having a control. The switch is coupled to the protected circuit and to a discharge path. The nanotube switch is controllable, in response to electrical stimulation of the control, between a de-activated state and an activated state. The activated state creates a current path so that a signal on the input pad flows to the discharge path to cause the signal at the input pad to remain within a predefined operable range for the protected circuit. The nanotube switch, the input pad, and the protected circuit may be on a semiconductor chip. The nanotube switch may be on a chip carrier. The deactivated and activated states may be volatile or non-volatile depending on the embodiment. The ESD circuit may be repeatedly programmed between the activated and deactivated states so as to repeatedly activate and deactivate ESD protection of the protected circuit. The nanotube switch provides protection based on the magnitude of the signal on the input pad.
摘要翻译：纳米管ESD保护装置和相应的非易失性和挥发性纳米管开关。用于保护受保护电路的静电放电（ESD）保护电路耦合到输入焊盘。 ESD电路包括电子控制的纳米管开关。开关耦合到保护电路和放电路径。纳米管开关可以响应于控制的电刺激而被控制在去激活状态和激活状态之间。激活状态产生电流路径，使得输入焊盘上的信号流到放电路径，使输入焊盘处的信号保持在受保护电路的预定可操作范围内。纳米管开关，输入焊盘和受保护电路可以在半导体芯片上。纳米管开关可以在芯片载体上。根据实施例，去激活状态和激活状态可以是易失性的或非易失性的。可以在激活和去激活状态之间重复地编程ESD电路，以便重复激活和去激活受保护电路的ESD保护。纳米管开关基于输入焊盘上的信号幅度提供保护。

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