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1. 发明授权

US08253171B1 Two terminal nanotube switch, memory array incorporating the same and method of making 有权
标题翻译：两端子纳米管开关，内存阵列及其制作方法
公开(公告)号：US08253171B1
公开(公告)日：2012-08-28
申请号：US12857494
申请日：2010-08-16
申请人： Garo J. Derderian , Michael J. O'Connor , Adrian N. Robinson , Jonathan W. Ward
发明人： Garo J. Derderian , Michael J. O'Connor , Adrian N. Robinson , Jonathan W. Ward
IPC分类号： H01L27/118
CPC分类号： B82Y10/00 , H01L27/2436 , H01L27/2463 , H01L29/413 , H01L45/04 , H01L45/1226 , H01L45/149 , H01L45/1641
摘要： A two terminal switching device includes a first conductive terminal, a second conductive terminal in spaced relation to the first terminal, the first terminal encompassed by the second terminal. The device also includes an electrically insulating spacer that encompasses the first terminal and provides the spaced relation between the second terminal and the first terminal. It also includes a nanotube article comprising at least one carbon nanotube, the nanotube article being arranged to overlap at least a portion of each of the first and second terminals. The device also includes a stimulus circuit in electrical communication with at least one of the first and second terminals that is capable of applying a first electrical stimulus to at least one of the first and second terminals to change the resistance of the device between the first and second terminals from a relatively low resistance to a relatively high resistance.
摘要翻译：双端开关装置包括第一导电端子，与第一端子间隔开的第二导电端子，由第二端子包围的第一端子。该装置还包括电绝缘间隔件，其包围第一端子并且提供第二端子和第一端子之间的间隔关系。其还包括包含至少一个碳纳米管的纳米管制品，所述纳米管制品被布置成与所述第一和第二端子中的每一个的至少一部分重叠。该装置还包括与第一和第二端子中的至少一个电连通的刺激电路，其能够对第一和第二端子中的至少一个施加第一电刺激，以改变装置在第一和第二端子之间的电阻第二端子从相对较低的电阻到相对较高的电阻。

2. 发明授权

US09159418B1 High density stacked CNT memory cube arrays with memory selectors 有权
标题翻译：具有存储器选择器的高密度堆叠CNT存储器立方体阵列
公开(公告)号：US09159418B1
公开(公告)日：2015-10-13
申请号：US13301521
申请日：2011-11-21
申请人： Jonathan W. Ward , Adrian N. Robinson , Garo J. Derderian
发明人： Jonathan W. Ward , Adrian N. Robinson , Garo J. Derderian
IPC分类号： G11C11/00 , G11C13/02
CPC分类号： G11C13/025 , G11C13/003 , G11C2213/17 , G11C2213/33 , G11C2213/70 , G11C2213/71 , G11C2213/76 , H01L51/0048 , H01L51/0591
摘要： A three-dimensional (3-D) memory stack and a method of formation thereof are described. The 3-D memory stack includes a number of vertically stacked memory devices. Each memory device includes one or more memory cells. Each of the memory cells can be formed on a conductive material. Each memory device further includes one or more selector elements each configured to couple a memory cell of the one or more memory cells to a respective bit line. None of the selector elements is configured as a diode or a transistor element.
摘要翻译：描述三维（3-D）存储器堆栈及其形成方法。 3-D存储器堆叠包括多个垂直堆叠的存储器件。每个存储器件包括一个或多个存储器单元。每个存储单元可以形成在导电材料上。每个存储器件还包括一个或多个选择器元件，每个选择器元件被配置为将一个或多个存储器单元的存储器单元耦合到相应的位线。没有选择器元件被配置为二极管或晶体管元件。

3. 发明授权

US08618662B1 Devices containing carbon nanomaterial electrical interconnects overcoated with metal nitride films and methods for production thereof 有权
标题翻译：包含用金属氮化物膜覆盖的碳纳米材料电互连的装置及其生产方法
公开(公告)号：US08618662B1
公开(公告)日：2013-12-31
申请号：US13398771
申请日：2012-02-16
申请人： Garo J. Derderian , Jonathan W. Ward
发明人： Garo J. Derderian , Jonathan W. Ward
IPC分类号： H01L21/44
CPC分类号： H05K3/28 , B82Y10/00 , B82Y99/00 , H01L21/76834 , H01L21/76862 , H01L23/53276 , H01L23/573 , H01L29/0669 , H01L51/0048 , H01L2221/1094 , H01L2924/0002 , H05K1/09 , H01L2924/00
摘要： Metal nitride coatings containing carbon can be either electrically conductive or substantially non-conductive depending on the degree to which they have been exposed to an oxidative environment. Substantially non-conductive metal nitride coatings can be used as protective layers in electrical devices. Particularly in an electrical device containing carbon nanomaterials, the metal nitride coatings can be used to mask the device's operational characteristics. Such devices can contain an electrical interconnect containing a carbon nanomaterial and a substantially non-conductive coating on the carbon nanomaterial. The substantially non-conductive coating can contain at least one substantially non-conductive metal nitride layer and at least some carbon. Methods for making such devices and metal nitride coatings are also described herein.
摘要翻译：包含碳的金属氮化物涂层可以是导电的或基本上不导电的，这取决于它们暴露于氧化环境的程度。基本上不导电的金属氮化物涂层可用作电气设备中的保护层。特别是在含有碳纳米材料的电气装置中，金属氮化物涂层可用于掩蔽该装置的操作特性。这种装置可以包含在碳纳米材料上含有碳纳米材料和基本不导电的涂层的电互连。基本上不导电的涂层可以包含至少一个基本上不导电的金属氮化物层和至少一些碳。本文还描述了制造这种装置和金属氮化物涂层的方法。

4. 发明授权

US08604459B1 Electrical devices containing a carbon nanotube switching layer with a passivation layer disposed thereon and methods for production thereof 有权
标题翻译：包含其上设置有钝化层的碳纳米管切换层的电气装置及其制造方法
公开(公告)号：US08604459B1
公开(公告)日：2013-12-10
申请号：US13491550
申请日：2012-06-07
申请人： Jonathan W. Ward , Garo J. Derderian
发明人： Jonathan W. Ward , Garo J. Derderian
IPC分类号： H01L29/06
CPC分类号： H01L29/0673 , B82Y10/00 , H01L51/0048 , H01L51/0558 , H01L51/107
摘要： Electrical devices containing carbon nanotubes can be passivated to protect the carbon nanotubes from degradation while substantially preserving the carbon nanotubes' electrical conductivity and switching characteristics. Such electrical devices can include a first metal contact, a switching layer containing a plurality of carbon nanotubes disposed on the first metal contact, a passivation layer containing amorphous carbon, a metal carbide, or any combination thereof that is disposed on at least a top surface of the switching layer, and a second metal contact disposed upon the passivation layer. Methods for forming the electrical devices can include disposing a passivation layer containing amorphous carbon on at least a top surface of the switching layer, and optionally heating to at least partially convert the amorphous carbon within the passivation layer into a metal carbide.
摘要翻译：可以钝化包含碳纳米管的电子器件以保护碳纳米管免受降解，同时基本上保留碳纳米管的电导率和开关特性。这样的电气装置可以包括第一金属触点，包含设置在第一金属触点上的多个碳纳米管的开关层，包含无定形碳的钝化层，金属碳化物或其任何组合，其设置在至少一个顶表面以及设置在钝化层上的第二金属触点。用于形成电气装置的方法可以包括在开关层的至少顶表面上设置含有无定形碳的钝化层，以及任选地加热至少部分地将钝化层内的无定形碳转化为金属碳化物。

5. 发明授权

US08125824B1 Nanotube random access memory (NRAM) and transistor integration 有权
标题翻译：纳米管随机存取存储器（NRAM）和晶体管集成
公开(公告)号：US08125824B1
公开(公告)日：2012-02-28
申请号：US12875044
申请日：2010-09-02
申请人： Jonathan W. Ward , Adrian N. Robinson , Scott Anderson
发明人： Jonathan W. Ward , Adrian N. Robinson , Scott Anderson
IPC分类号： G11C11/34
CPC分类号： G11C13/025 , B82Y10/00
摘要： A nanotube random access memory (NRAM) structure is provided. The structure includes a substrate, a gate electrode disposed in the substrate, and a first nanotube fabric disposed on the substrate. The first nanotube fabric has a channel region spaced apart from the gate electrode by a portion of the substrate. The structure also includes a drain contact contacting the first nanotube fabric. The structure also includes a second nanotube fabric disposed on the substrate, and is adjacent and connected to the first nanotube fabric. The structure also includes a source contact contacting the second nanotube fabric. The first nanotube fabric is a high-voltage fabric compared to the second nanotube fabric such that when a voltage is applied across the first nanotube fabric and the second nanotube fabric via the drain contact and the source contact, the second nanotube fabric is permitted to switch without switching the first nanotube fabric.
摘要翻译：提供了纳米管随机存取存储器（NRAM）结构。该结构包括衬底，设置在衬底中的栅电极和布置在衬底上的第一纳米管织物。第一纳米管织物具有通过衬底的一部分与栅电极间隔开的沟道区。该结构还包括接触第一纳米管织物的漏极接触。该结构还包括布置在基底上并与第一纳米管织物相邻并连接的第二纳米管织物。该结构还包括接触第二纳米管织物的源极接触。与第二纳米管织物相比，第一纳米管织物是高电压织物，使得当经由漏极接触和源极接触跨越第一纳米管织物和第二纳米管织物施加电压时，允许第二纳米管织物切换而不切换第一纳米管织物。

6. 发明授权

US08426309B2 Graphene nanoelectric device fabrication 有权
标题翻译：石墨烯纳米电子器件制造
公开(公告)号：US08426309B2
公开(公告)日：2013-04-23
申请号：US12879400
申请日：2010-09-10
申请人： Jonathan W. Ward , Michael J. O'Connor
发明人： Jonathan W. Ward , Michael J. O'Connor
IPC分类号： H01L21/44
CPC分类号： H01L21/02282 , B82Y30/00 , B82Y40/00 , C01B31/043 , C01B31/0446 , C01B31/0476 , C01B31/0484 , C01B32/184 , C01B32/192 , C01B32/194 , C01B32/23 , C01B2204/02 , C01B2204/04 , C01B2204/22 , H01L21/02491 , H01L21/02527 , H01L21/0262 , H01L21/02628 , H01L21/31127 , H01L29/1606
摘要： Embodiments of the present invention provide methods for fabricating graphene nanoelectronic devices with semiconductor compatible processes, which allow wafer scale fabrication of graphene nanoelectronic devices. Embodiments of the present invention also provide methods for passivating graphene nanoelectronic devices, which enable stacking of multiple graphene devices and the creation of high density graphene based circuits. Other embodiments provide methods for producing devices with graphene layer segments having multiple thicknesses.
摘要翻译：本发明的实施例提供了制造具有半导体兼容工艺的石墨烯纳米电子器件的方法，其允许石墨烯纳米电子器件的晶片尺寸制造。本发明的实施方案还提供了钝化石墨烯纳米电子器件的方法，其能够堆叠多个石墨烯器件和创建基于高密度石墨烯的电路。其它实施例提供了用于生产具有多个厚度的石墨烯层段的装置的方法。

7. 发明申请

US20110059599A1 Graphene Nanoelectric Device Fabrication 有权
标题翻译：石墨烯纳米电极器件制造
公开(公告)号：US20110059599A1
公开(公告)日：2011-03-10
申请号：US12879400
申请日：2010-09-10
申请人： Jonathan W. Ward , Michael J. O'Connor
发明人： Jonathan W. Ward , Michael J. O'Connor
IPC分类号： H01L21/20
CPC分类号： H01L21/02282 , B82Y30/00 , B82Y40/00 , C01B31/043 , C01B31/0446 , C01B31/0476 , C01B31/0484 , C01B32/184 , C01B32/192 , C01B32/194 , C01B32/23 , C01B2204/02 , C01B2204/04 , C01B2204/22 , H01L21/02491 , H01L21/02527 , H01L21/0262 , H01L21/02628 , H01L21/31127 , H01L29/1606
摘要： Embodiments of the present invention provide methods for fabricating graphene nanoelectronic devices with semiconductor compatible processes, which allow wafer scale fabrication of graphene nanoelectronic devices. Embodiments of the present invention also provide methods for passivating graphene nanoelectronic devices, which enable stacking of multiple graphene devices and the creation of high density graphene based circuits. Other embodiments provide methods for producing devices with graphene layer segments having multiple thicknesses.
摘要翻译：本发明的实施例提供了制造具有半导体兼容工艺的石墨烯纳米电子器件的方法，其允许石墨烯纳米电子器件的晶片尺寸制造。本发明的实施方案还提供了钝化石墨烯纳米电子器件的方法，其能够堆叠多个石墨烯器件和创建基于高密度石墨烯的电路。其它实施例提供了用于生产具有多个厚度的石墨烯层段的装置的方法。

8. 发明授权

US08816706B1 Reconfigurable devices containing carbon nanomaterials and methods for using same 有权
标题翻译：含有碳纳米材料的可重构装置及其使用方法
公开(公告)号：US08816706B1
公开(公告)日：2014-08-26
申请号：US13220592
申请日：2011-08-29
申请人： Jonathan W. Ward , Brent M. Segal , Elwood J. Egerton
发明人： Jonathan W. Ward , Brent M. Segal , Elwood J. Egerton
IPC分类号： G01R27/26 , G01N27/00
CPC分类号： H01L23/57 , G06F21/86 , H01L2924/0002 , H05K1/0275 , H05K1/0292 , H05K1/0293 , H05K1/167 , H05K2201/0323 , H01L2924/00
摘要： Methods for using carbon nanomaterials to alter the operational output of a device are described herein. The methods can include providing a device that contains a carbon nanomaterial in a first state, and applying an input stimulus to the carbon nanomaterial so as to change the first state into a second state. In the first state, the carbon nanomaterial can be used to produce a normal operational output of the device, whereas the device can produce an altered operational output when the carbon nanomaterial is in the second state. When producing an altered operational output, the device can continue operating, but the altered operational output can be non-indicative of the true operational state of the device. Devices containing a carbon nanomaterial that can be reconfigured from a normal operational output to an altered operational output are also described herein.
摘要翻译：本文描述了使用碳纳米材料来改变设备的操作输出的方法。所述方法可以包括提供包含处于第一状态的碳纳米材料的装置，以及向碳纳米材料施加输入刺激以将第一状态改变为第二状态。在第一状态下，碳纳米材料可用于产生器件的正常工作输出，而当碳纳米材料处于第二状态时，器件可以产生改变的工作输出。当产生改变的操作输出时，设备可以继续操作，但改变的操作输出可以不指示设备的真实操作状态。本文还描述了包含可从正常操作输出重新配置为改变的操作输出的碳纳米材料的装置。

9. 发明授权

US08771628B2 Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof 有权
标题翻译：水性碳纳米管涂布液及其施用液的制造方法
公开(公告)号：US08771628B2
公开(公告)日：2014-07-08
申请号：US12612445
申请日：2009-11-04
申请人： Ramesh Sivarajan , Thomas Rueckes , Rahul Sen , Brent M. Segal , Eliodor G. Ghenciu , Jonathan W. Ward , Tzong-Ru T. Han
发明人： Ramesh Sivarajan , Thomas Rueckes , Rahul Sen , Brent M. Segal , Eliodor G. Ghenciu , Jonathan W. Ward , Tzong-Ru T. Han
IPC分类号： D01F9/12
CPC分类号： D06M11/64 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/168 , C01B32/17 , C01B2202/02 , C01B2202/28 , D06M10/02 , D06M11/50 , D06M11/55 , D06M2101/40 , H01L51/0003 , H01L51/0048 , Y10S977/746 , Y10S977/845
摘要： Certain applicator liquids and method of making the applicator liquids are described. The applicator liquids can be used to form nanotube films or fabrics of controlled properties. An applicator liquid for preparation of a nanotube film or fabric includes a controlled concentration of nanotubes dispersed in a liquid medium containing water. The controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity.
摘要翻译：描述了一些施用液体和制备涂抹液的方法。施用液体可用于形成具有受控特性的纳米管膜或织物。用于制备纳米管膜或织物的涂布液包括分散在含水液体介质中的受控浓度的纳米管。受控浓度足以形成预选密度和均匀性的纳米管织物或薄膜。

10. 发明授权

US08513768B2 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权
标题翻译：非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法
公开(公告)号：US08513768B2
公开(公告)日：2013-08-20
申请号：US11835651
申请日：2007-08-08
申请人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
发明人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
IPC分类号： H01L23/52
CPC分类号： H01L27/1021 , B82Y10/00 , G11C13/025 , G11C2213/19 , H01L21/8221 , H01L23/5256 , H01L27/0688 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.
摘要翻译：在一个方面，非挥发性纳米管二极管器件包括第一和第二端子; 包括阴极和阳极的半导体元件，并且能够响应于施加到第一导电端子的电刺激而在阴极和阳极之间形成导电路径; 以及纳米管开关元件，其包括与所述半导体元件电连通的纳米管织物制品，所述纳米管织物制品设置在所述半导体元件和所述第二端子之间，并且能够形成所述第一和第二端子之间的电刺激，多个逻辑状态。

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