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    • 2. 发明授权
    • Triodes using nanofabric articles and methods of making the same
    • 使用纳米制品的三极管和制造相同的方法
    • US08115187B2
    • 2012-02-14
    • US12124475
    • 2008-05-21
    • Brent M. SegalJonathan W. WardThomas Rueckes
    • Brent M. SegalJonathan W. WardThomas Rueckes
    • H01L29/02
    • H01J21/10H01J3/021H01J19/38H01J2203/0232Y10S977/742
    • Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that include three-terminals (an emitter, a grid and an anode), and also higher-order devices such as tetrodes and pentodes, all of which use carbon nanotubes to form various components of the devices. In certain embodiments, patterned portions of nanotube fabric may be used as grid/gate components, conductive traces, etc. Nanotube fabrics may be suspended or conformally disposed. In certain embodiments, methods for stiffening a nanotube fabric layer are used. Various methods for applying, selectively removing (e.g. etching), suspending, and stiffening vertically- and horizontally-disposed nanotube fabrics are disclosed, as are CMOS-compatible fabrication methods. In certain embodiments, nanotube fabric triodes provide high-speed, small-scale, low-power devices that can be employed in radiation-intensive applications.
    • 提供具有碳纳米管膜,层,带和织物的真空微电子器件。 本发明公开了包括三端(发射极,栅极和阳极)的三极管结构的微电子真空装置,以及诸如四极和五极管的高阶器件,所有这些都使用碳纳米管来形成 设备。 在某些实施例中,纳米管织物的图案化部分可以用作栅极/栅极部件,导电迹线等。纳米管织物可以悬挂或保形地设置。 在某些实施例中,使用用于加强纳米管织物层的方法。 公开了用于施加,选择性地去除(例如蚀刻)悬浮和加强垂直和水平布置的纳米管织物的各种方法,以及CMOS兼容的制造方法。 在某些实施例中,纳米管织物三极管提供可用于辐射密集型应用中的高速,小规模,低功率的器件。
    • 9. 发明申请
    • TRIODES USING NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME
    • 使用南方文章的三方及其制作方法
    • US20090115305A1
    • 2009-05-07
    • US12124475
    • 2008-05-21
    • Brent M. SegalJonathan W. WardThomas Rueckes
    • Brent M. SegalJonathan W. WardThomas Rueckes
    • H01J21/10H01J9/385
    • H01J21/10H01J3/021H01J19/38H01J2203/0232Y10S977/742
    • Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that include three-terminals (an emitter, a grid and an anode), and also higher-order devices such as tetrodes and pentodes, all of which use carbon nanotubes to form various components of the devices. In certain embodiments, patterned portions of nanotube fabric may be used as grid/gate components, conductive traces, etc. Nanotube fabrics may be suspended or conformally disposed. In certain embodiments, methods for stiffening a nanotube fabric layer are used. Various methods for applying, selectively removing (e.g. etching), suspending, and stiffening vertically- and horizontally-disposed nanotube fabrics are disclosed, as are CMOS-compatible fabrication methods. In certain embodiments, nanotube fabric triodes provide high-speed, small-scale, low-power devices that can be employed in radiation-intensive applications.
    • 提供具有碳纳米管膜,层,带和织物的真空微电子器件。 本发明公开了包括三端(发射极,栅极和阳极)的三极管结构的微电子真空装置,以及诸如四极和五极管的高阶器件,所有这些都使用碳纳米管来形成 设备。 在某些实施例中,纳米管织物的图案化部分可以用作栅极/栅极部件,导电迹线等。纳米管织物可以悬挂或保形地设置。 在某些实施例中,使用用于加强纳米管织物层的方法。 公开了用于施加,选择性地去除(例如蚀刻)悬浮和加强垂直和水平布置的纳米管织物的各种方法,以及CMOS兼容的制造方法。 在某些实施例中,纳米管织物三极管提供可用于辐射密集型应用中的高速,小规模,低功率的器件。