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1. 发明授权

US06249029B1 Device method for enhanced avalanche SOI CMOS 失效
标题翻译：增强型雪崩SOI CMOS器件方法
公开(公告)号：US06249029B1
公开(公告)日：2001-06-19
申请号：US09320595
申请日：1999-05-26
申请人： Andres Bryant , William F. Clark , John J. Ellis-Monaghan , Edward P. Maciejewski , Edward J. Nowak , Wilbur D. Pricer , Minh H. Tong
发明人： Andres Bryant , William F. Clark , John J. Ellis-Monaghan , Edward P. Maciejewski , Edward J. Nowak , Wilbur D. Pricer , Minh H. Tong
IPC分类号： H01L2976
CPC分类号： H01L29/7841 , H01L27/1203
摘要： A device design for an FET in SOI CMOS which is designed for enhanced avalanche multiplication of current through the device when the FET is on, and to remove the body charge when the FET is off. The FET has an electrically floating body and is substantially electrically isolated from the substrate. The present invention provides a high resistance path coupling the floating body of the FET to the source of the FET, such that the resistor enables the device to act as a floating body for active switching purposes and as a grounded body in a standby mode to reduce leakage current. The high resistance path has a resistance of at least 1 M-ohm, and comprises a polysilicon resistor which is fabricated by using a split polysilicon process in which a buried contact mask opens a hole in a first polysilicon layer to allow a second polysilicon layer to contact the substrate.
摘要翻译：用于SOI CMOS中的FET的器件设计，其被设计用于当FET导通时增强通过器件的电流的雪崩倍增，并且当FET关闭时去除体电荷。 FET具有电浮动体并且与衬底基本上电隔离。本发明提供了将FET的浮体耦合到FET的源极的高电阻路径，使得该电阻器使得该器件能够充当用于有源开关目的的浮动体并且作为待机模式中的接地体以减少漏电流。高电阻路径具有至少1MΩ的电阻，并且包括通过使用分离多晶硅工艺制造的多晶硅电阻器，其中掩埋接触掩模在第一多晶硅层中打开孔，以允许第二多晶硅层接触基板。

2. 发明授权

US6040991A SRAM memory cell having reduced surface area 失效
标题翻译：具有减小的表面积的SRAM存储单元
公开(公告)号：US6040991A
公开(公告)日：2000-03-21
申请号：US225074
申请日：1999-01-04
申请人： John J. Ellis-Monaghan , Wilbur D. Pricer
发明人： John J. Ellis-Monaghan , Wilbur D. Pricer
IPC分类号： G11C11/412 , H01L21/8244 , H01L27/11 , G11C11/00
CPC分类号： G11C11/412
摘要： A Static RAM cell having a reduced surface area. The Static RAM cell includes a pair of P channel transistors and a pair of N channel transistors connected as a bistable latch. A first common source connection of the latch is connected to a Write Bit terminal and the remaining source connections of the latch are connected to complementary bit lines. A word line addressing the latch is provided through the transistors connected to the Bit Lines having shared body contact which permits reading and writing to the latch. During a write mode, the word line is connected to a potential which renders transistors connected to the complementary bit lines conductive, while the write bit connected to a potential which renders the remaining transistors nonconducting. During a read operation, one of the remaining transistors are rendered conductive, and the word line renders the set of transistors connected to the Bit Lines conductive so that the bit Lines are charged from the respective nodes of the latch.
摘要翻译：具有减小的表面积的静态RAM单元。静态RAM单元包括一对P沟道晶体管和作为双稳态锁存器连接的一对N沟道晶体管。锁存器的第一个公共源极连接连接到写入位端，并且锁存器的其余源极连接连接到互补位线。通过连接到具有共享体接触的位线的晶体管提供寻址锁存器的字线，其允许读取和写入锁存器。在写入模式期间，字线连接到使连接到互补位线的晶体管导通的电位，而写入位连接到使剩余晶体管不导通的电位。在读取操作期间，剩余晶体管中的一个导通，并且字线使连接到位线的晶体管组导通，使得位线从锁存器的相应节点充电。

3. 发明授权

US5959335A Device design for enhanced avalanche SOI CMOS 有权
标题翻译：增强型雪崩SOI CMOS器件设计
公开(公告)号：US5959335A
公开(公告)日：1999-09-28
申请号：US159307
申请日：1998-09-23
申请人： Andres Bryant , William F. Clark , John J. Ellis-Monaghan , Edward P. Maciejewski , Edward J. Nowak , Wilbur D. Pricer , Minh H. Tong
发明人： Andres Bryant , William F. Clark , John J. Ellis-Monaghan , Edward P. Maciejewski , Edward J. Nowak , Wilbur D. Pricer , Minh H. Tong
IPC分类号： H01L27/06 , H01L21/8234 , H01L27/12 , H01L29/78 , H01L29/786 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/7841 , H01L27/1203
摘要： A device design for an FET in SOI CMOS which is designed for enhanced avalanche multiplication of current through the device when the FET is on, and to remove the body charge when the FET is off. The FET has an electrically floating body and is substantially electrically isolated from the substrate. The present invention provides a high resistance path coupling the floating body of the FET to the source of the FET, such that the resistor enables the device to act as a floating body for active switching purposes and as a grounded body in a standby mode to reduce leakage current. The high resistance path has a resistance of at least 1 M-ohm, and comprises a polysilicon resistor which is fabricated by using a split polysilicon process in which a buried contact mask opens a hole in a first polysilicon layer to allow a second polysilicon layer to contact the substrate.
摘要翻译：用于SOI CMOS中的FET的器件设计，其被设计用于当FET导通时增强通过器件的电流的雪崩倍增，并且当FET关闭时去除体电荷。 FET具有电浮动体并且与衬底基本上电隔离。本发明提供了将FET的浮体耦合到FET的源极的高电阻路径，使得该电阻器使得该器件能够充当用于有源开关目的的浮动体并且作为待机模式中的接地体以减少漏电流。高电阻路径具有至少1MΩ的电阻，并且包括通过使用分离多晶硅工艺制造的多晶硅电阻器，其中掩埋接触掩模在第一多晶硅层中打开孔，以允许第二多晶硅层接触基板。

4. 发明授权

US06802033B1 Low-power critical error rate communications controller 失效
标题翻译：低功率关键错误率通信控制器
公开(公告)号：US06802033B1
公开(公告)日：2004-10-05
申请号：US09286855
申请日：1999-04-06
申请人： Claude L. Bertin , Alvar A. Dean , Kenneth J. Goodnow , Scott W. Gould , Patrick E. Perry , Wilbur D. Pricer , William R. Tonti
发明人： Claude L. Bertin , Alvar A. Dean , Kenneth J. Goodnow , Scott W. Gould , Patrick E. Perry , Wilbur D. Pricer , William R. Tonti
IPC分类号： G06F1100
CPC分类号： G06F11/10 , H04L1/0053
摘要： A way of dynamically modifying error recovery on a communications controller to operate at the lowest power mode allowed by current error rate conditions. When operating conditions are good and a small number of errors are detected, a low power error detection/correction mode is entered saving battery life. The low power error correction mechanism runs at a slower frequency and lower power than the high power mechanism and maintains the same data rate for the controller, thus saving power. Selecting the controller error (power) mode may be externally, such as by a person using a control dial on a cellular telephone when the voice data gets too noisy. Alternatively, the selection can be automatic, a critical error level detector internally making the selection.
摘要翻译：一种在通信控制器上动态修改错误恢复的方式，以在当前错误率条件允许的最低功耗模式下工作。当操作条件良好并且检测到少量错误时，输入低功率错误检测/校正模式，从而节省电池寿命。低功率误差校正机构运行频率较低，功率低于大功率机构，并为控制器保持相同的数据速率，从而节省功耗。选择控制器错误（电源）模式可以是外部的，例如当语音数据太嘈杂时，人们在蜂窝电话上使用控制拨盘。或者，选择可以是自动的，在内部进行选择的关键误差电平检测器。

5. 发明授权

US06645789B2 On chip alpha-particle detector 失效
公开(公告)号：US06645789B2
公开(公告)日：2003-11-11
申请号：US10246136
申请日：2002-09-18
申请人： Kerry Bernstein , Andres Bryant , Wayne J. Howell , William A. Klaasen , Wilbur D. Pricer , Anthony K. Stamper
发明人： Kerry Bernstein , Andres Bryant , Wayne J. Howell , William A. Klaasen , Wilbur D. Pricer , Anthony K. Stamper
IPC分类号： H01L2100
CPC分类号： H01L27/14683 , G01T1/244 , H01L27/14659 , H01L31/115 , H01L31/118
摘要： An IC chip comprising, a nearby or remote source capable of particle emissions; circuitry formed in the IC chip that is adversely affected by impacts of particle emissions from said source; and a particle detector formed in the IC chip between the circuitry and source for detecting said particle emissions. In one embodiment of the present invention, the source comprises a solder ball that is formed on a surface of the IC chip, and the solder ball is capable of emitting alpha-particles. The particle emissions detector of the present invention is a reverse biased Schottky diode. The IC chip is formed by (a) providing an IC chip having at least one layer of particle sensitive circuitry formed therein; (b) forming another layer having at least one particle sensor region situated therein on a surface of said IC chip; and (c) optionally, forming at least one particle emission source over said another layer.

6. 发明授权

US06548338B2 Integrated high-performance decoupling capacitor and heat sink 失效
标题翻译：集成高性能去耦电容和散热片
公开(公告)号：US06548338B2
公开(公告)日：2003-04-15
申请号：US09764504
申请日：2001-01-17
申请人： Kerry Bernstein , Robert M. Geffken , Wilbur D. Pricer , Anthony K. Stamper , Steven H. Voldman
发明人： Kerry Bernstein , Robert M. Geffken , Wilbur D. Pricer , Anthony K. Stamper , Steven H. Voldman
IPC分类号： H01L218238
CPC分类号： H01L28/40 , H01L23/3672 , H01L23/3735 , H01L27/0805 , H01L2924/0002 , H01L2924/10158 , H01L2924/00
摘要： A significant and very effective decoupling capacitor and heat sink combination that, in a single structure provides both a heat sink and a decoupling capacitor in close proximity to the active circuit on the chip requiring either heat sinking or decoupling capacitance or both. This is achieved by forming on a semiconductor chip, having a buried oxide layer therein, an integrated high-performance decoupling capacitor that uses a metallic deposit greater than 30 microns thick formed on the back surface of the chip and electrically connected to the active chip circuit to result in a significant and very effective decoupling capacitor and heat sink in close proximity to the active circuit on the chip requiring such decoupling capacitance and heat sinking capabilities. The decoupling capacitance can use the substrate of the chip itself as one of the capacitive plates and a formed metallic deposit as the second capacitive plate which also serves as a heat sink for the active circuit formed in the chip. The structure thus provides both a significant and effective decoupling capacitance in close proximity to the active circuit on the chip requiring such decoupling capacitance as well as providing improved heat sinking for the decoupled active circuit.
摘要翻译：一种显着且非常有效的去耦电容器和散热器组合，其在单个结构中提供散热器和去耦电容器，其紧邻芯片上的有源电路，需要散热或去耦电容或两者兼有。这通过在其中具有掩埋氧化物层的半导体芯片上形成集成的高性能去耦电容器来实现，所述高性能去耦电容器使用形成在芯片的背面上并且电连接到有源芯片电路的大于30微米厚的金属沉积物导致显着且非常有效的去耦电容器和散热器紧邻芯片上的有源电路，需要这种去耦电容和散热能力。去耦电容可以使用芯片本身的衬底作为电容板之一，并且形成金属沉积物作为第二电容板，其也用作形成在芯片中的有源电路的散热器。因此，该结构提供了重要且有效的去耦电容，其紧邻芯片上的有源电路，需要这种去耦电容，并为解耦的有源电路提供改进的散热。

7. 发明授权

US06532520B1 Method and apparatus for allocating data and instructions within a shared cache 失效
标题翻译：用于在共享缓存内分配数据和指令的方法和装置
公开(公告)号：US06532520B1
公开(公告)日：2003-03-11
申请号：US09394965
申请日：1999-09-10
申请人： Alvar A. Dean , Marc R. Faucher , John W. Goetz , Kenneth J. Goodnow , Paul T. Gutwin , Stephen W. Mahin , Wilbur D. Pricer
发明人： Alvar A. Dean , Marc R. Faucher , John W. Goetz , Kenneth J. Goodnow , Paul T. Gutwin , Stephen W. Mahin , Wilbur D. Pricer
IPC分类号： G06F1200
CPC分类号： G06F12/121 , G06F12/127 , G06F2212/1021 , G06F2212/6042
摘要： A method and apparatus are provided for managing cache allocation for a plurality of data types in a unified cache having dynamically allocable lines for first type data and for second type data. Cache allocation is managed by counting misses to first type data and misses to second type data in the unified cache, and by determining when a difference between a number of first type data misses and a number of second type data misses crosses a preselected threshold. A replacement algorithm of the unified cache then is adjusted in response to the detected crossing of the preselected threshold, the adjusting step including increasing a replacement priority of the first type data lines in the cache. The replacement algorithm preferably is an LRU algorithm wherein the adjusting step includes incrementing an age indication of the first type data lines. Hardware for implementing the inventive cache allocation management method comprises a miss counter configured to increment its count in response to a miss to first type data signal on a first counter input and to output a first logic state on a first counter output when the counter's count exceeds a first predetermined count. A priority adjustment circuit coupled to the first counter output increases the replacement priority of the first type data relative to the replacement priority of the second type data in response to the first logic state output by the miss counter.
摘要翻译：提供了一种方法和装置，用于管理具有用于第一类型数据和第二类型数据的动态可分配行的统一高速缓存中的多个数据类型的高速缓存分配。高速缓存分配通过对统一高速缓存中的第一类型数据和第二类型数据的丢失进行计数，并且通过确定多个第一类型数据丢失与多个第二类型数据丢失之间的差异何时穿过预选阈值来管理高速缓存分配。然后，响应于检测到的预选阈值的交叉，调整统一高速缓存的替换算法，该调整步骤包括增加高速缓存中的第一类型数据线的替换优先级。替换算法优选地是LRU算法，其中调整步骤包括递增第一类型数据线的年龄指示。用于实现本发明的高速缓存分配管理方法的硬件包括错误计数器，其配置为响应于第一计数器输入上的第一类型数据信号的未命中而增加其计数，并且当计数器的计数超过时，在第一计数器输出上输出第一逻辑状态第一预定计数。耦合到第一计数器输出的优先级调整电路响应于未命中计数器输出的第一逻辑状态，增加第一类型数据相对于第二类型数据的替换优先级的替换优先级。

8. 发明授权

US06472230B2 Re-settable tristate programmable device 有权
标题翻译：可重新设置的三态可编程器件
公开(公告)号：US06472230B2
公开(公告)日：2002-10-29
申请号：US10102381
申请日：2002-03-20
申请人： Kurt R. Kimmel , J. Alex Chediak , William T. Motsiff , Wilbur D. Pricer , Richard Q. Williams
发明人： Kurt R. Kimmel , J. Alex Chediak , William T. Motsiff , Wilbur D. Pricer , Richard Q. Williams
IPC分类号： H01L2100
CPC分类号： H01L23/5258 , G11C11/5607 , G11C2216/26 , H01L2924/0002 , H01L2924/00
摘要： A method and structure for a programmable circuit that includes a magnetic device having a reluctance which is alterable.
摘要翻译：一种用于可编程电路的方法和结构，其包括具有可改变的磁阻的磁性装置。

9. 发明授权

US06236103B1 Integrated high-performance decoupling capacitor and heat sink 失效
标题翻译：集成高性能去耦电容和散热片
公开(公告)号：US06236103B1
公开(公告)日：2001-05-22
申请号：US09283828
申请日：1999-03-31
申请人： Kerry Bernstein , Robert M. Geffken , Wilbur D. Pricer , Anthony K. Stamper , Steven H. Voldman
发明人： Kerry Bernstein , Robert M. Geffken , Wilbur D. Pricer , Anthony K. Stamper , Steven H. Voldman
IPC分类号： H01L2900
CPC分类号： H01L28/40 , H01L23/3672 , H01L23/3735 , H01L27/0805 , H01L2924/0002 , H01L2924/10158 , H01L2924/00
摘要： A significant and very effective decoupling capacitor and heat sink combination that, in a single structure provides both a heat sink and a decoupling capacitor in close proximity to the active circuit on the chip requiring either heat sinking or decoupling capacitance or both. This is achieved by forming on a semiconductor chip, having a buried oxide layer therein, an integrated high-performance decoupling capacitor that uses a metallic deposit greater than 30 microns thick formed on the back surface of the chip and electrically connected to the active chip circuit to result in a significant and very effective decoupling capacitor and heat sink in close proximity to the active circuit on the chip requiring such decoupling capacitance and heat sinking capabilities. The decoupling capacitance can use the substrate of the chip itself as one of the capacitive plates and a formed metallic deposit as the second capacitive plate which also serves as a heat sink for the active circuit formed in the chip. The structure thus provides both a significant and effective decoupling capacitance in close proximity to the active circuit on the chip requiring such decoupling capacitance as well as providing improved heat sinking for the decoupled active circuit.
摘要翻译：一种显着且非常有效的去耦电容器和散热器组合，其在单个结构中提供散热器和去耦电容器，其紧邻芯片上的有源电路，需要散热或去耦电容或两者兼有。这通过在其中具有掩埋氧化物层的半导体芯片上形成集成的高性能去耦电容器来实现，所述高性能去耦电容器使用形成在芯片的背面上并且电连接到有源芯片电路的大于30微米厚的金属沉积物导致显着且非常有效的去耦电容器和散热器紧邻芯片上的有源电路，需要这种去耦电容和散热能力。去耦电容可以使用芯片本身的衬底作为电容板之一，并且形成金属沉积物作为第二电容板，其也用作形成在芯片中的有源电路的散热器。因此，该结构提供了重要且有效的去耦电容，其紧邻芯片上的有源电路，需要这种去耦电容，并为解耦的有源电路提供改进的散热。

10. 发明授权

US6111425A Very low power logic circuit family with enhanced noise immunity 有权
标题翻译：超低功耗逻辑电路系列，具有增强的抗噪声能力
公开(公告)号：US6111425A
公开(公告)日：2000-08-29
申请号：US173436
申请日：1998-10-15
申请人： Claude L. Bertin , Russell J. Houghton , Wilbur D. Pricer , William R. Tonti
发明人： Claude L. Bertin , Russell J. Houghton , Wilbur D. Pricer , William R. Tonti
IPC分类号： H03K19/003 , H03K3/356 , H03K19/173 , H03K17/16
CPC分类号： H03K3/356113 , H03K19/1738
摘要： A very low power logic circuit family which advantageously provides 1) retained high performance, 2) significantly reduced power dissipation, and 3) enhanced noise immunity. In a first set of embodiments, dual rail complementary logic signals are utilized to improve circuit immunity to external noise and to reduce noise generated by the logic circuit itself. A receiver portion of the present invention comprises two input FETs having cross coupling of the two gates to the two sources. In one preferred embodiment, both receiver and driver portions are connected in a repeater with all N channel drivers. A second set of embodiments have a single sided input in an unbalanced receiver comprising cross coupled source to gate N channel and cross coupled drain to gate P channel output transistors.
摘要翻译：一个非常低功率的逻辑电路系列，有利地提供1）保持高性能，2）显着降低的功耗，和3）增强的抗噪声能力。在第一组实施例中，使用双轨互补逻辑信号来提高对外部噪声的电路抗扰性并且减少由逻辑电路本身产生的噪声。本发明的接收机部分包括具有两个门到两个源的交叉耦合的两个输入FET。在一个优选实施例中，接收器和驱动器部分都连接在具有所有N个通道驱动器的中继器中。第二组实施例在不平衡接收机中具有单侧输入，包括到栅极N沟道的交叉耦合源极和栅极P沟道输出晶体管的交叉耦合漏极。

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