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1. 发明授权

US4963974A Electronic device plated with gold by means of an electroless gold plating solution 失效
标题翻译：电子设备通过无电镀金液镀金
公开(公告)号：US4963974A
公开(公告)日：1990-10-16
申请号：US184061
申请日：1988-04-20
申请人： Jiro Ushio , Osamu Miyazawa , Akira Tomizawa , Hitoshi Yokono , Naoya Kanda , Naoko Matsuura , Setsuo Ando , Hiroaki Okudaira
发明人： Jiro Ushio , Osamu Miyazawa , Akira Tomizawa , Hitoshi Yokono , Naoya Kanda , Naoko Matsuura , Setsuo Ando , Hiroaki Okudaira
IPC分类号： C23C18/44
CPC分类号： C23C18/44 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/73265 , H01L2924/01047 , H01L2924/10253 , Y10T428/12396 , Y10T428/12528 , Y10T428/12611 , Y10T428/12826 , Y10T428/1284 , Y10T428/12889
摘要： The present invention relates to an electroless gold plating solution, a method of plating by using the same, and an electronic device plated with gold by using the same.According to the present electroless gold plating solution, the plating solution components contain no cyanide ions, the amount of a reducing agent used is small, and gold plating can be carried out without causing the gold plating on conducting paths having a fine interval between them to short-circuit the conducting paths.Therefore, according to the method of gold plating by using said electroless gold plating solution, a plating method that is safe in the plating work and in the treatment of its waste liquor can be accomplished. The method has a feature that the method can provide an electronic device on which parts can be mounted highly densely, and wherein the joint reliability to the parts is high.

2. 发明授权

US5202151A Electroless gold plating solution, method of plating with gold by using the same, and electronic device plated with gold by using the same 失效
标题翻译：化学镀金液，使用金的电镀方法，以及使用其镀金的电子器件
公开(公告)号：US5202151A
公开(公告)日：1993-04-13
申请号：US532656
申请日：1990-06-04
申请人： Jiro Ushio , Osamu Miyazawa , Akira Tomizawa , Hitoshi Yokono , Naoya Kanda , Naoko Matsuura , Setsuo Ando , Hiroaki Okudaira
发明人： Jiro Ushio , Osamu Miyazawa , Akira Tomizawa , Hitoshi Yokono , Naoya Kanda , Naoko Matsuura , Setsuo Ando , Hiroaki Okudaira
IPC分类号： C23C18/44
CPC分类号： C23C18/44
摘要： The present invention relates to an electroless gold plating solution, a method of plating by using the same, and an electronic device plated with gold by using the same.According to the present electroless gold plating solution, the plating solution components contain no cyanide ions, the amount of a reducing agent used is small, and gold plating can be carried out without causing the gold plating on conducting paths having a fine interval between them to short-circuit the conducting paths.Therefore, according to the method of gold plating by using said electroless gold plating solution, a plating method that is safe in the plating work and in the treatment of its waste liquor can be accomplished. The method has a feature that the method can provide an electronic device on which parts can be mounted highly densely, and wherein the joint reliability to the parts is high.
摘要翻译：本发明涉及无电镀金液，使用该方法的电镀方法以及使用该方法镀金的电子器件。根据本发明的无电解镀金液，电镀液成分不含氰化物离子，还原剂的使用量少，可以进行镀金而不会在其间具有微细间隔的导电路径上进行镀金，短路导通路径。因此，根据通过使用所述无电解镀金液的镀金方法，可以实现电镀工作中安全的镀液方法及其废液的处理。该方法具有该方法能够提供高密度地安装部件的电子设备，并且其中对部件的连接可靠性高的特征。

3. 发明授权

US5198273A Electroless gold plating solution and method for plating gold therewith 失效
标题翻译：电镀金镀层解决方案及其镀金方法
公开(公告)号：US5198273A
公开(公告)日：1993-03-30
申请号：US580877
申请日：1990-09-11
申请人： Setsuo Ando , Jiro Ushio , Takashi Inoue , Hiroaki Okudaira , Takeshi Shimazaki , Hitoshi Yokono
发明人： Setsuo Ando , Jiro Ushio , Takashi Inoue , Hiroaki Okudaira , Takeshi Shimazaki , Hitoshi Yokono
IPC分类号： C23C18/44
CPC分类号： C23C18/44
摘要： The present invention provides an electroless gold plating solution comprising essentially gold ions, a complexing agent, and a reducing agent, characterized by further containing a reduction promoter which has a function of giving electrons to an oxidant, the oxidant being produced from oxidation of the reducing agent with the gold ions being reduced, to change the oxidant to the original reducing agent. The present invention also provides a process for conducting electroless gold plating by bringing a substrate into contact with the electroless gold plating solution. The plating solution is excellent in the stability for gold plating of high deposition rate. Thus the present invention allows the electroless gold plating to be performed stably at a higher deposition rate.

4. 发明授权

US4880464A Electroless gold plating solution 失效
标题翻译：化学镀金液
公开(公告)号：US4880464A
公开(公告)日：1989-11-14
申请号：US143959
申请日：1988-01-14
申请人： Jiro Ushio , Osamu Miyazawa , Hitoshi Yokono , Akira Tomizawa
发明人： Jiro Ushio , Osamu Miyazawa , Hitoshi Yokono , Akira Tomizawa
IPC分类号： C23C18/44
CPC分类号： C23C18/44 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/73265 , H01L2924/01047 , H01L2924/10253 , Y10T428/12396 , Y10T428/12528 , Y10T428/12611 , Y10T428/12826 , Y10T428/1284 , Y10T428/12889
摘要： An electroless gold plating solution comprising a thiosulfato gold(I) complex, a thiosulfate, thiourea, a pH regulator and a stabilizer. The electroless gold plating solution shows a plating rate and a plating solution stability comparable to those of conventional gold plating solutions containing cyanide ions, and requires a smaller amount of reducing agent to be used therein. Further, the electroless gold plating solution is safe because it does not contain cyanide ions.

5. 发明授权

US4804559A Electroless gold plating solution 失效
标题翻译：化学镀金液
公开(公告)号：US4804559A
公开(公告)日：1989-02-14
申请号：US91457
申请日：1987-08-31
申请人： Jiro Ushio , Osamu Miyazawa , Hitoshi Yokono , Akira Tomizawa
发明人： Jiro Ushio , Osamu Miyazawa , Hitoshi Yokono , Akira Tomizawa
IPC分类号： C23C18/44 , C23C3/02
CPC分类号： C23C18/44 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/73265 , H01L2924/01047 , H01L2924/10253 , Y10T428/12396 , Y10T428/12528 , Y10T428/12611 , Y10T428/12826 , Y10T428/1284 , Y10T428/12889
摘要： An electroless gold plating solution comprising a thiosulfato gold(I) complex, a thiosulfate, thiourea, a pH regulator and a stabilizer. The electroless gold plating solution shows a plating rate and a plating solution stability comparable to those of conventional gold plating solutions containing cyanide ions, and requires a smaller amount of reducing agent to be used therein. Further, the electroless gold plating solution is safe because it does not contain cyanide ions.
摘要翻译：包含硫代硫酸金（I）络合物，硫代硫酸盐，硫脲，pH调节剂和稳定剂的无电镀金溶液。化学镀金液显示了与含有氰化物离子的常规金镀液相当的电镀速率和电镀液稳定性，并且需要更少量的还原剂用于其中。此外，无电镀金液是不含氰化物离子的安全的。

6. 发明授权

US4324629A Process for regenerating chemical copper plating solution 失效
标题翻译：化学镀铜液再生方法
公开(公告)号：US4324629A
公开(公告)日：1982-04-13
申请号：US160201
申请日：1980-06-17
申请人： Hitoshi Oka , Hiroshi Kikuchi , Hitoshi Yokono , Haruo Suzuki , Toyofusa Yoshimura , Akira Matsuo , Osamu Miyazawa , Isamu Tanaka , Tokio Isogai
发明人： Hitoshi Oka , Hiroshi Kikuchi , Hitoshi Yokono , Haruo Suzuki , Toyofusa Yoshimura , Akira Matsuo , Osamu Miyazawa , Isamu Tanaka , Tokio Isogai
IPC分类号： C23C18/16 , C23C18/31 , C23G1/36 , C25D21/16 , B01D13/02
CPC分类号： B01D61/44 , C23C18/1617 , B01D2311/04 , Y10S204/13
摘要： During recyclic use of a chemical copper plating solution, counter anions to copper ions, anions formed by oxidation of a reducing agent, and carbon dioxide by absorption of carbon dioxide from air, which all have an inhibiting effect upon the plating, and also sodium ions having no inhibiting effect are accumulated in the plating solution.These accumulated ions can be removed by electrodialysis. Particularly, regeneration can be satisfactorily regenerated by adjusting the pH of used chemical plating solution to 2-11 before the electrodialysis, and using a selectively monovalent anion permeable membrane as an anion exchange membrane at the electrodialysis.
摘要翻译：在循环使用化学镀铜溶液时，与铜离子相反的阴离子，通过还原剂的氧化形成的阴离子，以及二氧化碳从空气中吸收二氧化碳，这些都对电镀具有抑制作用，还有钠离子在电镀溶液中没有积累抑制作用。这些积聚的离子可以通过电渗析去除。特别地，通过在电渗析之前将所使用的化学镀溶液的pH调节至2-11，并且在电渗析中使用选择性的单价阴离子可渗透膜作为阴离子交换膜，可以令人满意地再生。

7. 发明授权

US4310563A Method for automatically controlling composition of chemical copper plating solution 失效
标题翻译：自动控制化学镀铜液组成的方法
公开(公告)号：US4310563A
公开(公告)日：1982-01-12
申请号：US197150
申请日：1980-10-15
申请人： Hitoshi Oka , Kenji Nakamura , Hitoshi Yokono , Tokio Isogai , Akira Matsuo , Osamu Miyazawa , Isamu Tanaka
发明人： Hitoshi Oka , Kenji Nakamura , Hitoshi Yokono , Tokio Isogai , Akira Matsuo , Osamu Miyazawa , Isamu Tanaka
IPC分类号： G01N27/333 , C23C18/16 , G01N27/30 , G01N27/416 , C23C3/02 , B05D1/18
CPC分类号： C23C18/1683
摘要： The pH of a chemical copper plating solution is exactly measured for a prolonged time by utilizing a copper oxide prepared by etching metallic copper in an 0.1-1 N inorganic acid then oxidizing the etched metallic copper in an aqueous 0.1-1 N alkali metal hydroxide solution as a main electrode for pH measurement or reducing agent concentration measurement in terms of pH.A combination of the pH measurement with well known procedures for measuring concentrations of cupric ions and a complexing agent exactly measures the pH and the concentrations of a reducing agent, cupric ions and a complexing agent for a continuation of longer time than the conventional procedures.
摘要翻译：通过使用通过在0.1-1N无机酸中蚀刻金属铜制备的氧化铜，然后在0.1-1N的碱金属氢氧化物水溶液中氧化蚀刻的金属铜，化学镀铜溶液的pH被长时间精确地测量作为用于pH测量的主要电极或根据pH的还原剂浓度测量。用于测量铜离子浓度和络合剂的众所周知的测量方法的组合可以精确地测量还原剂，铜离子和络合剂的pH值和浓度，持续比常规方法更长的时间。

8. 发明授权

US4303443A Electroless copper plating solution 失效
标题翻译：化学镀铜溶液
公开(公告)号：US4303443A
公开(公告)日：1981-12-01
申请号：US159231
申请日：1980-06-13
申请人： Osamu Miyazawa , Hitoshi Oka , Isamu Tanaka , Akira Matsuo , Hitoshi Yokono , Nobuo Nakagawa , Tokio Isogai
发明人： Osamu Miyazawa , Hitoshi Oka , Isamu Tanaka , Akira Matsuo , Hitoshi Yokono , Nobuo Nakagawa , Tokio Isogai
IPC分类号： C23C18/40 , C23C3/02
CPC分类号： C23C18/40
摘要： When an amine compound having at least two polyolefin glycol chains in one molecule is used as a stabilizer, and an alkylene diamine compound, at least one hydrogen atom in the respective amino groups thereof being substituted by CH.sub.2 COOX (wherein X is H or Na) and another hydrogen atom in the respective amino group thereof being substituted by CH.sub.2 OH, is used as a complexing agent for cupric ions and a nitrogen-containing cyclic compound is used as a complexing agent for cuprous ions in an electroless copper plating solution comprising water, a water-soluble copper salt, a complexing agent for cupric ions, a reducing agent, a pH-controlling agent and a stabilizer, or an electroless copper plating solution comprising water, a water-soluble copper salt, a complexing agent for cupric ions, a reducing agent, a pH-controlling agent, a stabilizer and a complexing agent for cuprous ions, the plating rate of the electroless copper plating solution, mechanical strength of plating film, and stability of the plating solution are improved.
摘要翻译：当使用在一个分子中具有至少两个聚烯烃二醇链的胺化合物作为稳定剂和亚烷基二胺化合物时，其各氨基中的至少一个氢原子被CH 2 COOX（其中X是H或Na）取代，和在其氨基中的另一个氢原子被CH 2 OH取代，用作铜离子的络合剂，并且含氮环状化合物用作含有水，水的无电镀铜溶液中的亚硝酸根离子的络合剂可溶性铜盐，铜离子络合剂，还原剂，pH控制剂和稳定剂，或包含水，水溶性铜盐，铜离子络合剂，还原剂的化学镀铜溶液药剂，pH控制剂，稳定剂和亚铜离子络合剂，化学镀铜溶液的电镀速率，电镀膜的机械强度和稳定剂改善了电镀溶液的性能。

9. 发明授权

US5162240A Method and apparatus of fabricating electric circuit pattern on thick and thin film hybrid multilayer wiring substrate 失效
标题翻译：在厚膜和薄膜混合多层布线基板上制作电路图案的方法和装置
公开(公告)号：US5162240A
公开(公告)日：1992-11-10
申请号：US537492
申请日：1990-06-12
申请人： Norio Saitou , Hideo Todokoro , Katsuhiro Kuroda , Satoru Fukuhara , Genya Matsuoka , Hideo Arima , Hitoshi Yokono , Takashi Inoue , Hidetaka Shigi
发明人： Norio Saitou , Hideo Todokoro , Katsuhiro Kuroda , Satoru Fukuhara , Genya Matsuoka , Hideo Arima , Hitoshi Yokono , Takashi Inoue , Hidetaka Shigi
IPC分类号： H01L21/48 , H01L23/538 , H01L23/544 , H05K1/02 , H05K1/03 , H05K1/09 , H05K3/46
CPC分类号： H05K3/4679 , H01L21/4857 , H01L23/5383 , H01L23/544 , H01L2223/5442 , H01L2223/54473 , H01L2224/16 , H01L2224/16235 , H01L2924/01014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/15174 , H05K1/0269 , H05K1/0306 , H05K1/092 , H05K2201/09781 , H05K2201/09918 , H05K3/4605 , H05K3/467
摘要： A thick and thin film hybrid multilayer wiring substrate includes an adjustment layer provided between a thick film circuit and a thin film circuit in order to adjust positions of the thick film circuit and the thin film circuit with high integration and large area of the thick and thin film hybrid substrate. The adjustment layer is formed using a direct printing process in accordance with dispersion of the shape of the thick film circuit substrate to absorb the dispersion of the substrate. Further, in order to absorb dispersion of contraction of the thick film substrate due to sintering, a position of a mark provided on the substrate is detected by an electron beam and thereafter a connection pattern is formed to be connected to a regular pattern.
摘要翻译：厚薄膜混合多层布线基板包括设置在厚膜电路和薄膜电路之间的调整层，以便调整厚膜电路和薄膜电路的位置，具有高集成度和大面积的厚薄薄膜混合基板。根据厚膜电路基板的形状的分散，使用直接印刷法形成调整层，以吸收基板的分散。此外，为了吸收由于烧结引起的厚膜基板的收缩分散，通过电子束检测设置在基板上的标记的位置，然后形成连接图案以连接到规则图案。

10. 发明授权

US5133403A Cooling arrangement for semiconductor devices and method of making the same 失效
标题翻译：用于半导体器件的冷却装置及其制造方法
公开(公告)号：US5133403A
公开(公告)日：1992-07-28
申请号：US423386
申请日：1989-10-19
申请人： Hitoshi Yokono , Takao Terabayashi , Nobuo Kayaba , Takahiro Daikoku , Shigekazu Kieda , Fumiyuki Kobayashi , Shizuo Zushi
发明人： Hitoshi Yokono , Takao Terabayashi , Nobuo Kayaba , Takahiro Daikoku , Shigekazu Kieda , Fumiyuki Kobayashi , Shizuo Zushi
IPC分类号： H01L23/373 , H01L23/433 , H01L23/473 , H05K7/20
CPC分类号： H01L23/4338 , H01L23/3733 , F28F2255/18 , H01L2224/16225
摘要： A cooling device for cooling semiconductor elements by removing heat generated from the semiconductor elements such as, for example, semiconductor integrated chips in a large-sized electronic computer. The cooling device is fashioned of a composite AlN-BN sintered material having a Vickers hardness not higher than one-fifth of that of an AlN material, and an anisotropic property of thermal conductivity in a two dimensional direction is higher than that of AlN which is isotropic in thermal conductivity. The cooling device may be mass-produced while nevertheless having a high transfer performance matching the quantity of heat generated for each semiconductor element even if the composite sintered material is uniform in shape and size. The composite sintered material is formed by a mixture of a hexagonal BN powder having an average particle diameter of not less than 1 .mu.m and an AlN powder having an average particle diameter of about 2 .mu.m, with a sintering aid being added and the powdery mixture being subjected to a hot press sintering whereby the sintered material is low in thermal conductivity in a direction parallel to an axis of a shaft of the hot press.
摘要翻译：一种用于通过从大型电子计算机中的诸如半导体集成芯片的半导体元件产生的热量来冷却半导体元件的冷却装置。该冷却装置由维氏硬度不高于AlN材料的五分之一的复合AlN-BN烧结材料制成，并且二维方向的热导率的各向异性特性比AlN的各向异性高各向同性的导热性。即使复合烧结体的形状和尺寸一致，冷却装置也可以批量生产，同时具有与每个半导体元件产生的热量匹配的高转印性能。复合烧结材料由平均粒径不小于1μm的六方晶BN粉末和平均粒径约2μm的AlN粉末的混合物形成，并加入烧结助剂。混合物进行热压烧结，由此烧结材料在与热压机的轴的轴线平行的方向上的导热性低。

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