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    • 5. 发明申请
    • Metrology systems and methods for lithography processes
    • 用于光刻工艺的计量系统和方法
    • US20080044741A1
    • 2008-02-21
    • US11504388
    • 2006-08-15
    • Chandrasekhar SarmaJingyu LianMatthias LipinskiHaoren Zhuang
    • Chandrasekhar SarmaJingyu LianMatthias LipinskiHaoren Zhuang
    • G03F1/00G06F17/50G03C5/00G03B27/42
    • G03F7/70425G03F7/70483
    • Metrology systems and methods for lithography processes are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a mask having a plurality of corner rounding test patterns formed thereon. A first semiconductor device is provided, and a layer of photosensitive material of the first semiconductor device is patterned with a plurality of corner rounding test features using the mask and a lithography process. An amount of corner rounding of the lithography process is measured by analyzing the plurality of corner rounding test features relative to other of the plurality of corner rounding test features formed on the layer of photosensitive material of the semiconductor device. The lithography process or the mask is altered in response to the amount of corner rounding measured, and a second semiconductor device is provided. The second semiconductor device is affected using the altered lithography process or the altered mask.
    • 公开了用于光刻工艺的计量系统和方法。 在一个实施例中,制造半导体器件的方法包括提供具有形成在其上的多个圆角圆形测试图案的掩模。 提供第一半导体器件,并且使用掩模和光刻工艺,利用多个拐角圆形测试特征对第一半导体器件的感光材料层进行构图。 通过分析相对于形成在半导体器件的感光材料层上的多个角圆切削测试特征中的其它角点的多个角圆测试特征来测量光刻工艺的角圆角。 光刻处理或掩模响应于测量的角圆度的量而改变,并且提供第二半导体器件。 使用改变的光刻工艺或改变的掩模影响第二半导体器件。