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1. 发明授权

US08115262B2 Dielectric multilayer structures of microelectronic devices and methods for fabricating the same 有权
标题翻译：微电子器件的介质多层结构及其制造方法
公开(公告)号：US08115262B2
公开(公告)日：2012-02-14
申请号：US12498311
申请日：2009-07-06
申请人： Jong-Pyo Kim , Jong-Ho Lee , Hyung-Suk Jung , Jung-Hyoung Lee
发明人： Jong-Pyo Kim , Jong-Ho Lee , Hyung-Suk Jung , Jung-Hyoung Lee
IPC分类号： H01L21/02
CPC分类号： H01L21/28202 , H01L21/28185 , H01L21/28194 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7833 , H01L29/7881 , H01L29/94 , Y10T428/265
摘要： A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M′Oy) or amorphous metal oxynitride (M′OyNz).
摘要翻译：在一个实施例中提供了一种微电子器件的电介质多层结构，其中泄漏电流特性和介电常数得到改善。电介质多层结构包括由非晶硅酸盐（M1-xSixOy）或无定形硅酸盐氮化物（M1-xSixOyNz）制成的下电介质层，以及形成在下电介质层的顶部上的上电介质层的无定形金属氧化物（M'Oy）或无定形金属氧氮化物（M'OyNz）。

2. 发明申请

US20100064939A1 SILOXANE BASED COATING COMPOSITION HAVING EXCELLENT DYEABILILTY ABRASION RESISTANCE, GLOSSINESS AND TRANSPARENCY,AND A PREPARATION METHOD THEREOF, AND AN OPTICAL LENZ COATED BY SAID COATING COMPOSITION 有权
标题翻译：基于硅氧烷的涂料组合物具有优异的耐磨损性，耐磨性和透明性，以及其制备方法和由涂料组合物涂覆的光学层
公开(公告)号：US20100064939A1
公开(公告)日：2010-03-18
申请号：US12312492
申请日：2007-11-15
申请人： Sang-Hyuk Im , Do-Hyun Jin , Jong-Pyo Kim , Young-Jun Hong , Seung-Heon Lee
发明人： Sang-Hyuk Im , Do-Hyun Jin , Jong-Pyo Kim , Young-Jun Hong , Seung-Heon Lee
IPC分类号： C09D5/00 , C09D7/12
CPC分类号： C09D183/06
摘要： A siloxane based coating composition having excellent dyeability, abrasion resistance, glossiness and transparency, a preparation method thereof, and an optical lens coated by the coating composition are suggested. The siloxane based coating composition includes organo silane compound, inorganic oxide (H-index filler), solvent and a dyeing improving material. The dyeing improving material adopts nitric acid, hydrochloric acid, phosphoric acid, sodium nitrate, potassium nitrate, silver nitrate, or the like. The siloxane based coating composition shows excellent dyeability owing to the dyeing improving material, excellent abrasion resistance owing to the organo silane compound, and excellent glossiness and transparency, so it may be applied as a coating film on a surface of a plastic lens such as optical lens, industrial safety lens and leisure-purpose goggle that require high transparency.
摘要翻译：提出了具有优异的可染性，耐磨性，光泽度和透明度的硅氧烷基涂料组合物，其制备方法和由涂料组合物涂覆的光学透镜。基于硅氧烷的涂料组合物包括有机硅烷化合物，无机氧化物（H-指数填料），溶剂和染色改进材料。染色改性材料采用硝酸，盐酸，磷酸，硝酸钠，硝酸钾，硝酸银等。基于硅氧烷的涂料组合物由于染色改善材料而显示出优异的可染性，由于有机硅烷化合物具有优异的耐磨性，并且具有优异的光泽度和透明度，因此可以作为涂膜施加在诸如光学的塑料透镜的表面上透镜，工业安全镜头和需要高透明度的休闲护目镜。

3. 发明授权

US07651729B2 Method of fabricating metal silicate layer using atomic layer deposition technique 有权
标题翻译：使用原子层沉积技术制造金属硅酸盐层的方法
公开(公告)号：US07651729B2
公开(公告)日：2010-01-26
申请号：US11127748
申请日：2005-05-12
申请人： Yun-Seok Kim , Jong-Pyo Kim , Ha-Jin Lim , Jae-Eun Park , Hyung-Suk Jung , Jong-Ho Lee , Jong-Ho Yang
发明人： Yun-Seok Kim , Jong-Pyo Kim , Ha-Jin Lim , Jae-Eun Park , Hyung-Suk Jung , Jong-Ho Lee , Jong-Ho Yang
IPC分类号： C23C16/00
CPC分类号： C23C16/401 , C23C16/45529 , C23C16/45531
摘要： There are provided methods of fabricating a metal silicate layer on a semiconductor substrate using an atomic layer deposition technique. The methods include performing a metal silicate layer formation cycle at least one time in order to form a metal silicate layer having a desired thickness. The metal silicate layer formation cycle includes an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon oxide layer formation cycle Q times. K and Q are integers ranging from 1 to 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, exhausting the metal source gas remaining in a reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor. The silicon oxide layer formation cycle includes supplying a silicon source gas, exhausting the silicon source gas remaining in the reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor.
摘要翻译：提供了使用原子层沉积技术在半导体衬底上制造金属硅酸盐层的方法。所述方法包括至少一次执行金属硅酸盐层形成循环以形成具有所需厚度的金属硅酸盐层。金属硅酸盐层形成循环包括重复进行金属氧化物层形成循环K次的操作和重复进行氧化硅层形成循环Q次的操作。 K和Q分别为1〜10的整数。金属氧化物层形成循环包括将金属源气体供给到含有基板的反应器，排出留在反应器内的金属源气体，清洗反应器内部，然后向反应器供给氧化气体的工序。氧化硅层形成循环包括提供硅源气体，排出留在反应器中的硅源气体以清洁反应器的内部，然后将氧化物气体供应到反应器中。

4. 发明申请

US20090267129A1 DIELECTRIC MULTILAYER STRUCTURES OF MICROELECTRONIC DEVICES AND METHODS FOR FABRICATING THE SAME 有权
标题翻译：微电子器件的电介质多层结构及其制造方法
公开(公告)号：US20090267129A1
公开(公告)日：2009-10-29
申请号：US12498311
申请日：2009-07-06
申请人： Jong-Pyo KIM , Jong-Ho LEE , Hyung-Suk JUNG , Jung-Hyoung LEE
发明人： Jong-Pyo KIM , Jong-Ho LEE , Hyung-Suk JUNG , Jung-Hyoung LEE
IPC分类号： H01L29/788 , H01L29/51 , B32B15/01
CPC分类号： H01L21/28202 , H01L21/28185 , H01L21/28194 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7833 , H01L29/7881 , H01L29/94 , Y10T428/265
摘要： A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M'Oy) or amorphous metal oxynitride (M'OyNz).
摘要翻译：在一个实施例中提供了一种微电子器件的电介质多层结构，其中泄漏电流特性和介电常数得到改善。电介质多层结构包括由非晶硅酸盐（M1-xSixOy）或无定形硅酸盐氮化物（M1-xSixOyNz）制成的下电介质层，以及形成在下电介质层的顶部上的上电介质层的无定形金属氧化物（M'Oy）或无定形金属氧氮化物（M'OyNz）。

5. 发明授权

US07588989B2 Dielectric multilayer structures of microelectronic devices and methods for fabricating the same 有权
标题翻译：微电子器件的介质多层结构及其制造方法
公开(公告)号：US07588989B2
公开(公告)日：2009-09-15
申请号：US11226053
申请日：2005-09-13
申请人： Jong-Pyo Kim , Jong-Ho Lee , Hyung-Suk Jung , Jung-Hyoung Lee
发明人： Jong-Pyo Kim , Jong-Ho Lee , Hyung-Suk Jung , Jung-Hyoung Lee
IPC分类号： H01L21/336
CPC分类号： H01L21/28202 , H01L21/28185 , H01L21/28194 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7833 , H01L29/7881 , H01L29/94 , Y10T428/265
摘要： A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M′Oy) or amorphous metal oxynitride (M′OyNz).
摘要翻译：在一个实施例中提供了一种微电子器件的电介质多层结构，其中泄漏电流特性和介电常数得到改善。电介质多层结构包括由非晶硅酸盐（M1-xSixOy）或无定形硅酸盐氮化物（M1-xSixOyNz）制成的下电介质层，以及形成在下电介质层的顶部上的上电介质层的无定形金属氧化物（M'Oy）或无定形金属氧氮化物（M'OyNz）。

6. 发明申请

US20060054980A1 Dielectric multilayer structures of microelectronic devices and methods for fabricating the same 有权
标题翻译：微电子器件的介质多层结构及其制造方法
公开(公告)号：US20060054980A1
公开(公告)日：2006-03-16
申请号：US11226053
申请日：2005-09-13
申请人： Jong-Pyo Kim , Jong-Ho Lee , Hyung-Suk Jung , Jung-Hyoung Lee
发明人： Jong-Pyo Kim , Jong-Ho Lee , Hyung-Suk Jung , Jung-Hyoung Lee
IPC分类号： H01L21/8238 , H01L29/94
CPC分类号： H01L21/28202 , H01L21/28185 , H01L21/28194 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7833 , H01L29/7881 , H01L29/94 , Y10T428/265
摘要： A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M′Oy) or amorphous metal oxynitride (M′OyNz).
摘要翻译：在一个实施例中提供了一种微电子器件的电介质多层结构，其中泄漏电流特性和介电常数得到改善。电介质多层结构包括由非晶态硅酸盐（M 1-x Si x O x O y）或无定形硅酸盐制成的下电介质层氮化物（M 1-x Si x O y N z N z），以及形成的上电介质层在下部电介质层的顶部，并且由非晶金属氧化物（M'O y y）或非晶金属氧氮化物（M'O y N y） / SUB>）。

7. 发明授权

US08303704B2 Siloxane based coating composition having excellent dyeabililty abrasion resistance, glossiness and transparency, and a preparation method thereof, and an optical lens coated by said coating composition 有权
标题翻译：具有优异的耐变色性，光泽度和透明度的硅氧烷基涂料组合物及其制备方法以及由所述涂料组合物涂覆的光学透镜
公开(公告)号：US08303704B2
公开(公告)日：2012-11-06
申请号：US12312492
申请日：2007-11-15
申请人： Sang-Hyuk Im , Do-Hyun Jin , Jong-Pyo Kim , Young-Jun Hong , Seung-Heon Lee
发明人： Sang-Hyuk Im , Do-Hyun Jin , Jong-Pyo Kim , Young-Jun Hong , Seung-Heon Lee
IPC分类号： C09D5/00 , C09D183/04 , C09D183/07 , C09D183/08
CPC分类号： C09D183/06
摘要： A siloxane based coating composition having excellent dyeability, abrasion resistance, glossiness and transparency, a preparation method thereof, and an optical lens coated by the coating composition are suggested. The siloxane based coating composition includes organo silane compound, inorganic oxide (H-index filler), solvent and a dyeing improving material. The dyeing improving material adopts nitric acid, hydrochloric acid, phosphoric acid, sodium nitrate, potassium nitrate, silver nitrate, or the like. The siloxane based coating composition shows excellent dyeability owing to the dyeing improving material, excellent abrasion resistance owing to the organo silane compound, and excellent glossiness and transparency, so it may be applied as a coating film on a surface of a plastic lens such as optical lens, industrial safety lens and leisure-purpose goggle that require high transparency.
摘要翻译：提出了具有优异的可染性，耐磨性，光泽度和透明度的硅氧烷基涂料组合物，其制备方法和由涂料组合物涂覆的光学透镜。基于硅氧烷的涂料组合物包括有机硅烷化合物，无机氧化物（H-指数填料），溶剂和染色改进材料。染色改性材料采用硝酸，盐酸，磷酸，硝酸钠，硝酸钾，硝酸银等。基于硅氧烷的涂料组合物由于染色改善材料而显示出优异的可染性，由于有机硅烷化合物具有优异的耐磨性，并且具有优异的光泽度和透明度，因此可以作为涂膜施加在诸如光学的塑料透镜的表面上透镜，工业安全镜头和需要高透明度的休闲护目镜。

8. 发明申请

US20090250774A1 Gate Structure 有权
标题翻译：门结构
公开(公告)号：US20090250774A1
公开(公告)日：2009-10-08
申请号：US12384274
申请日：2009-04-02
申请人： Sun Min-Chul , Jong-Pyo Kim
发明人： Sun Min-Chul , Jong-Pyo Kim
IPC分类号： H01L29/78
CPC分类号： H01L21/28114 , H01L21/28247 , H01L21/76897 , H01L29/42376 , H01L29/665 , H01L29/6656 , Y10S257/90
摘要： A gate structure includes a gate insulation layer pattern, a gate electrode, a first spacer and a protecting layer pattern. The gate insulation layer pattern is on a substrate. The gate electrode is on the gate insulation layer pattern, the gate electrode including a lower portion having a first width, a central portion having a second width smaller than the first width and an upper portion having a third width. The first spacer is on a lower sidewall of the gate electrode. The protecting layer pattern is on a central sidewall of the gate electrode.
摘要翻译：栅极结构包括栅极绝缘层图案，栅电极，第一间隔物和保护层图案。栅极绝缘层图案在基板上。栅电极位于栅极绝缘层图案上，栅电极包括具有第一宽度的下部，具有小于第一宽度的第二宽度的中心部分和具有第三宽度的上部。第一间隔物位于栅电极的下侧壁上。保护层图案位于栅电极的中心侧壁上。

9. 发明申请

US20050156256A1 Method of fabricating lanthanum oxide layer and method of fabricating MOSFET and capacitor using the same 有权
标题翻译：制造氧化镧层的方法及使用其制造MOSFET和电容器的方法
公开(公告)号：US20050156256A1
公开(公告)日：2005-07-21
申请号：US11034512
申请日：2005-01-12
申请人： Jong-Pyo Kim , Jung-Hyun Lee , Bum-Seok Seo , Jung-Hyoung Lee
发明人： Jong-Pyo Kim , Jung-Hyun Lee , Bum-Seok Seo , Jung-Hyoung Lee
IPC分类号： H01L21/31 , C23C16/40 , H01L21/314 , H01L21/316 , H01L29/76
CPC分类号： H01L21/0228 , C23C16/40 , H01L21/02175 , H01L21/02192 , H01L21/022 , H01L21/28194 , H01L21/3141 , H01L21/31604 , H01L29/517
摘要： Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time. The described steps of injecting the lanthanum precursor into the chamber, first-purging the chamber, injecting an oxidizer into the chamber, and second-purging the chamber may be sequentially and repeatedly performed to form a lanthanum oxide layer of a desired thickness having enhanced semiconductor characteristics.
摘要翻译：公开了制造氧化镧层的方法以及特别适用于使用这种氧化镧层的半导体应用的MOSFET和/或电容器的制造方法。所述方法包括将半导体衬底设置到腔室中的预备步骤。然后将三（双（三甲基甲硅烷基）氨基）镧作为镧前体注入室中，使得镧前体在半导体衬底上被化学吸附。然后，在进行室的第一次吹扫之后，至少一个氧化剂被注入到室中，使得氧化剂与半导体衬底上的镧前体化学吸附。然后，房间被第二次清除。将镧前体注入到室中，首先清洗室，将氧化剂注入到室中，以及对室进行第二次净化的所述步骤可以被顺序地和重复地进行，以形成具有增强的半导体的所需厚度的氧化镧层特点

10. 发明申请

US20090098692A1 Method for Fabricating a Semiconductor Gate Structure 有权
标题翻译：制造半导体栅极结构的方法
公开(公告)号：US20090098692A1
公开(公告)日：2009-04-16
申请号：US11872298
申请日：2007-10-15
申请人： Jingyu Lian , Jong Pyo Kim
发明人： Jingyu Lian , Jong Pyo Kim
IPC分类号： H01L21/8238
CPC分类号： H01L21/823842 , H01L21/26506 , H01L21/823835 , H01L29/665
摘要： A method of making a semiconductor device is disclosed. A mask if formed over a first and a second region of a semiconductor body, and a vertical diffusion barrier is formed in a region between the first and second regions. A mask is then formed over the second region and the first region is left unmasked. The semiconductor body is exposed to a dopant, so that the first region is doped and the second region is blocked from the dopant by the mask and by the vertical diffusion barrier.
摘要翻译：公开了制造半导体器件的方法。如果形成在半导体主体的第一和第二区域上的掩模，并且在第一和第二区域之间的区域中形成垂直扩散阻挡层。然后在第二区域上形成掩模，并且第一区域未被掩蔽。半导体本体暴露于掺杂剂，使得第一区域被掺杂，并且第二区域被掩模和垂直扩散阻挡层阻挡掺杂剂。

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