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1. 发明授权

US06362512B1 Microelectromechanical structures defined from silicon on insulator wafers 有权
标题翻译：由绝缘体上硅晶片定义的微机电结构
公开(公告)号：US06362512B1
公开(公告)日：2002-03-26
申请号：US09468423
申请日：1999-12-21
申请人： Joel A. Kubby , Jingkuang Chen , Alex T. Tran
发明人： Joel A. Kubby , Jingkuang Chen , Alex T. Tran
IPC分类号： H01L2982
CPC分类号： B81B3/0083 , B81C2201/0109 , B81C2201/019 , B81C2201/0191 , B81C2201/053 , G02B6/4214
摘要： A device structure is defined in a single-crystal silicon (SCS) layer separated by an insulator layer, such as an oxide layer, from a handle wafer. The SCS can be attached to the insulator by wafer bonding, and is selectively etched, as by photolithographic patterning and dry etching. A sacrificial oxide layer can be deposited on the etched SCS, on which polysilicon can be deposited. A protective oxide layer is deposited, and CMOS circuitry and sensors are integrated. Silicon microstructures with sensors connected to CMOS circuitry are released. In addition, holes can be etched through the sacrificial oxide layer, sacrificial oxide can be deposited on the etched SCS, polysilicon can be deposited on the sacrificial oxide, PSG can be deposited on the polysilicon layer, which both can then be patterned.
摘要翻译：器件结构被限定在由来自处理晶片的绝缘体层（例如氧化物层）分离的单晶硅（SCS）层中。 SCS可以通过晶片接合连接到绝缘体，并且通过光刻图案和干蚀刻被选择性地蚀刻。可以在蚀刻的SCS上沉积牺牲氧化物层，在其上沉积多晶硅。沉积保护性氧化物层，并集成CMOS电路和传感器。释放了连接到CMOS电路的传感器的硅微结构。此外，可以通过牺牲氧化物层蚀刻孔，牺牲氧化物可以沉积在蚀刻的SCS上，多晶硅可以沉积在牺牲氧化物上，PSG可以沉积在多晶硅层上，然后可以对其进行图案化。

2. 发明授权

US06249346B1 Monolithic spectrophotometer 有权
标题翻译：单片分光光度计
公开(公告)号：US06249346B1
公开(公告)日：2001-06-19
申请号：US09467185
申请日：1999-12-20
申请人： Jingkuang Chen , Joel A. Kubby
发明人： Jingkuang Chen , Joel A. Kubby
IPC分类号： G01J336
CPC分类号： G01J3/18 , G01J3/02 , G01J3/0218 , G01J3/0256 , G01J3/0259 , G01J3/2803
摘要： A micro spectrophotometer is monolithically constructed on a silicon substrate. The spectrophotometer includes a concave grating, which is used for dispersing optical waves as well as focusing reflected light onto a photodiode array sited on a silicon bridge. The silicon bridge is bent 90° from the surface of the silicon substrate in order to orthogonally intersect the output light from the grating. A precision notch is defined in the silicon substrate for coupling to an optical input fiber. Signal processing circuitry is etched on the substrate using conventional CMOS processes for initial processing of information received from the photodiode array.
摘要翻译：微型分光光度计在硅衬底上单片构造。分光光度计包括凹光栅，其用于分散光波以及将反射光聚焦到位于硅桥上的光电二极管阵列上。硅桥从硅衬底的表面弯曲90°，以便与光栅的输出光正交相交。在硅衬底中限定了用于耦合到光输入光纤的精密凹口。使用常规CMOS工艺在衬底上蚀刻信号处理电路，用于对从光电二极管阵列接收的信息进行初始处理。

3. 发明申请

US20110003405A1 Surface Micromachining Process of MEMS Ink Jet Drop Ejectors On Glass Substrates 有权
标题翻译： MEMS墨滴喷射器在玻璃基板上的表面微加工工艺
公开(公告)号：US20110003405A1
公开(公告)日：2011-01-06
申请号：US12495827
申请日：2009-07-01
申请人： Chingwen Yeh , James B. Boyce , Kathleen Boyce , Jingkuang Chen , Feixia Pan , Joel A. Kubby
发明人： Chingwen Yeh , James B. Boyce , Kathleen Boyce , Jingkuang Chen , Feixia Pan , Joel A. Kubby
IPC分类号： H01L21/30
CPC分类号： B81C1/00158 , Y10T29/42
摘要： Method and device for forming a membrane includes providing a glass substrate, and depositing a thin layer of chromium on the glass substrate. The thin layer of chromium is patterned to form a deflection electrode and interconnect leads. A sacrificial layer of aluminum is deposited on top of the patterned chromium layer, then the sacrificial layer is patterned to define anchor regions. On top of the sacrificial layer, a thick layer of chromium is deposited, and the thick layer of chromium is patterned to form a membrane. The sacrificial layer is then etched to release the membrane.
摘要翻译：用于形成膜的方法和装置包括提供玻璃基板，以及在玻璃基板上沉积薄层的铬。图案化薄层的铬以形成偏转电极和互连引线。在图案化的铬层的顶部上沉积铝的牺牲层，然后将牺牲层图案化以限定锚定区域。在牺牲层的顶部，沉积厚厚的铬层，并且将厚的铬层图案化以形成膜。然后蚀刻牺牲层以释放膜。

4. 发明授权

US06990265B2 Monolithic reconfigurable optical multiplexer systems and methods 失效
标题翻译：单片可重构光复用器系统和方法
公开(公告)号：US06990265B2
公开(公告)日：2006-01-24
申请号：US10721849
申请日：2003-11-25
申请人： Joel A. Kubby , Pinyen Lin , Jingkuang Chen , Yi Su
发明人： Joel A. Kubby , Pinyen Lin , Jingkuang Chen , Yi Su
IPC分类号： G02B6/26
CPC分类号： G02B6/356 , G02B6/12021 , G02B6/12033 , G02B6/2938 , G02B6/3508 , G02B6/3512 , G02B6/3584 , G02B6/3596 , G02B2006/12061 , G02B2006/12097 , G02B2006/12107 , G02B2006/12145 , G02B2006/12164
摘要： A micro-optical device having an aligned waveguide switch. The device includes a stationary input part, a stationary output part and a movable part. The stationary input part and the stationary output part each have a plurality of input and output waveguides, respectively. The movable part has a plurality of switching waveguides and is movable relative to the stationary input and output parts. A stop block limits movement of the movable part in order to align at least one of the switching waveguides with the applicable input waveguide(s) and output waveguide(s). The movement of the movable part is substantially transverse.
摘要翻译：具有对准的波导开关的微型光学器件。该装置包括固定输入部分，固定输出部分和可动部分。固定输入部分和固定输出部分别分别具有多个输入和输出波导。可移动部件具有多个开关波导，并且可相对于固定的输入和输出部件移动。止动块限制了可移动部件的移动，以便将至少一个开关波导与可应用的输入波导和输出波导对准。可移动部件的运动基本上是横向的。

5. 发明授权

US06661070B2 Micromechanical and microoptomechanical structures with single crystal silicon exposure step 失效
公开(公告)号：US06661070B2
公开(公告)日：2003-12-09
申请号：US10193804
申请日：2002-07-11
申请人： Andrew J. Zosel , Joel A. Kubby , Peter M. Gulvin , Chuang-Chia Lin , Jingkuang Chen , Alex T. Tran
发明人： Andrew J. Zosel , Joel A. Kubby , Peter M. Gulvin , Chuang-Chia Lin , Jingkuang Chen , Alex T. Tran
IPC分类号： H01L2982
CPC分类号： B81C1/00666 , B81B2203/058 , B81C2201/014 , B81C2201/0164 , B81C2201/056 , G02B26/0833
摘要： The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.

6. 发明授权

US06510275B1 Micro-optoelectromechanical system based device with aligned structures and method for fabricating same 失效
标题翻译：具有对准结构的微光电机电系统装置及其制造方法
公开(公告)号：US06510275B1
公开(公告)日：2003-01-21
申请号：US09986399
申请日：2001-11-08
申请人： Alex Tran , Joel A. Kubby , Jingkuang Chen , Peter Gulvin , Kathleen A. Feinberg , Yi Su
发明人： Alex Tran , Joel A. Kubby , Jingkuang Chen , Peter Gulvin , Kathleen A. Feinberg , Yi Su
IPC分类号： G02B600
CPC分类号： G02B6/3636 , G02B6/136 , G02B6/30 , G02B6/3652 , G02B6/3692 , G02B2006/12097
摘要： A micro-optoelectromechanical system based device with aligned structures comprises at least one optical structure formed in a silicon layer of the device and at least one optical fiber connection structure that is self-aligned with the at least one optical structure. In embodiments, the at least one optical fiber connection structure is formed in a substrate of the device and may comprise a V-groove. In other embodiments, the at least one optical structure may comprise a waveguide. A nitride layer may be formed on at least a portion of the waveguide. In various embodiments, the silicon layer may be a single-crystal-silicon layer of a silicon-on-insulator wafer. A method for fabricating a micro-optoelectromechanical system based device with aligned structures is provided in which the at least one optical structure and the at least one optical fiber connection structure are defined using the same masking layer.
摘要翻译：具有对准结构的基于微光机电系统的器件包括形成在器件的硅层中的至少一个光学结构以及与所述至少一个光学结构自对准的至少一个光纤连接结构。在实施例中，至少一个光纤连接结构形成在器件的衬底中，并且可以包括V形槽。在其他实施例中，所述至少一个光学结构可以包括波导。可以在波导的至少一部分上形成氮化物层。在各种实施例中，硅层可以是绝缘体上硅晶片的单晶硅层。提供一种用于制造具有对准结构的基于微光机电系统的装置的方法，其中使用相同的掩模层限定所述至少一个光学结构和所述至少一个光纤连接结构。

7. 发明授权

US06379989B1 Process for manufacture of microoptomechanical structures 有权
标题翻译：微机电结构的制造工艺
公开(公告)号：US06379989B1
公开(公告)日：2002-04-30
申请号：US09468141
申请日：1999-12-21
申请人： Joel A. Kubby , Jingkuang Chen , Alex T. Tran
发明人： Joel A. Kubby , Jingkuang Chen , Alex T. Tran
IPC分类号： H01L2100
CPC分类号： G02B6/43 , G02B6/4214
摘要： A microoptomechanical structure produced by defining a microoptical structure in a single-crystal silicon layer separated by an insulator layer from a handle wafer, such as a SOI wafer, selectively etching the single crystal silicon layer, depositing a sacrificial oxide layer on the etched single crystal silicon layer, depositing and etching a polysilicon layer on the sacrificial oxide layer, with remaining polysilcon forming hinge elements, and releasing formed microoptical structures. Embodiments use an oxide as an insulator, and other embodiments provide for wafer bonding of the silicon layer to the insulator layer.
摘要翻译：通过在由诸如SOI晶片的处理晶片分离的绝缘体层的单晶硅层中限定微光学结构而产生的微机电结构，选择性地蚀刻单晶硅层，在蚀刻的单晶上沉积牺牲氧化物层硅层，沉积和蚀刻牺牲氧化物层上的多晶硅层，形成铰链元件，并释放形成的微光学结构。实施例使用氧化物作为绝缘体，并且其它实施例提供硅层与绝缘体层的晶片结合。

8. 发明授权

US08058182B2 Surface micromachining process of MEMS ink jet drop ejectors on glass substrates 有权
标题翻译： MEMS喷墨滴管在玻璃基板上的表面微加工工艺
公开(公告)号：US08058182B2
公开(公告)日：2011-11-15
申请号：US12495827
申请日：2009-07-01
申请人： Chingwen Yeh , James B. Boyce , Kathleen Boyce, legal representative , Jingkuang Chen , Feixia Pan , Joel A. Kubby
发明人： Chingwen Yeh , James B. Boyce , Jingkuang Chen , Feixia Pan , Joel A. Kubby
IPC分类号： H01L21/469
CPC分类号： B81C1/00158 , Y10T29/42
摘要： Method and device for forming a membrane includes providing a glass substrate, and depositing a thin layer of chromium on the glass substrate. The thin layer of chromium is patterned to form a deflection electrode and interconnect leads. A sacrificial layer of aluminum is deposited on top of the patterned chromium layer, then the sacrificial layer is patterned to define anchor regions. On top of the sacrificial layer, a thick layer of chromium is deposited, and the thick layer of chromium is patterned to form a membrane. The sacrificial layer is then etched to release the membrane.
摘要翻译：用于形成膜的方法和装置包括提供玻璃基板，以及在玻璃基板上沉积薄层的铬。图案化薄层的铬以形成偏转电极和互连引线。在图案化的铬层的顶部上沉积铝的牺牲层，然后将牺牲层图案化以限定锚定区域。在牺牲层的顶部，沉积厚厚的铬层，并且将厚的铬层图案化以形成膜。然后蚀刻牺牲层以释放膜。

9. 发明授权

US06658179B2 Monolithic reconfigurable optical multiplexer systems and methods 有权
标题翻译：单片可重构光复用器系统和方法
公开(公告)号：US06658179B2
公开(公告)日：2003-12-02
申请号：US09986395
申请日：2001-11-08
申请人： Joel A. Kubby , Pinyen Lin , Jingkuang Chen , Yi Su
发明人： Joel A. Kubby , Pinyen Lin , Jingkuang Chen , Yi Su
IPC分类号： G02B612
CPC分类号： G02B6/356 , G02B6/12021 , G02B6/12033 , G02B6/2938 , G02B6/3508 , G02B6/3512 , G02B6/3584 , G02B6/3596 , G02B2006/12061 , G02B2006/12097 , G02B2006/12107 , G02B2006/12145 , G02B2006/12164
摘要： A silicon demultiplexer, a plurality of silicon switches and a silicon multiplexer are monolithically integrated on a single silicon chip. In embodiments, the silicon demultiplexer and the silicon multiplexer each comprise a diffraction grating. In other embodiments, the silicon demultiplexer and the silicon multiplexer each comprise an arrayed waveguide grating. In various exemplary embodiments, the silicon optical switches comprise optical switches, micromachined torsion mirrors, electrostatic micromirrors, and/or tilting micromirrors. In use, an optical signal comprising a multiplexed data stream is input into the monolithic reconfigurable optical multiplexer. An optical signal that comprises a modified multiplexed data stream may be output. In an optical communications system, the silicon demultiplexer communicates with an input optical fiber, the plurality of silicon optical switches communicate between the silicon demultiplexer and the silicon multiplexer, and the silicon multiplexer communicates with an output optical fiber. In various embodiments, the optical switches are fabricated to be self-aligned.
摘要翻译：硅解复用器，多个硅开关和硅多路复用器单片集成在单个硅芯片上。在实施例中，硅解复用器和硅多路复用器各自包括衍射光栅。在其他实施例中，硅解复用器和硅多路复用器均包括阵列波导光栅。在各种示例性实施例中，硅光开关包括光开关，微机械扭转镜，静电微镜和/或倾斜微镜。在使用中，包括复用数据流的光信号被输入到单片可重构光复用器。可以输出包括修改的多路复用数据流的光信号。在光通信系统中，硅解复用器与输入光纤通信，多个硅光开关在硅解复用器和硅多路复用器之间通信，并且硅复用器与输出光纤通信。在各种实施例中，光开关被制造成自对准。

10. 发明授权

US06479315B1 Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step 有权
标题翻译：用单晶硅曝光步骤制造微机械和微机电结构的方法
公开(公告)号：US06479315B1
公开(公告)日：2002-11-12
申请号：US09724514
申请日：2000-11-27
申请人： Andrew J. Zosel , Peter M. Gulvin , Jingkuang Chen , Joel A. Kubby , Chuang-Chia Lin , Alex T. Tran
发明人： Andrew J. Zosel , Peter M. Gulvin , Jingkuang Chen , Joel A. Kubby , Chuang-Chia Lin , Alex T. Tran
IPC分类号： H01L2100
CPC分类号： B81C1/00666 , B81B2203/058 , B81C2201/014 , B81C2201/0164 , B81C2201/056 , G02B26/0833
摘要： The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilicon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.
摘要翻译：本发明提供一种微机械或微机电结构。该结构通过包括在衬底层上限定由绝缘体层分离的单晶硅层上的结构的方法制造; 沉积和蚀刻单晶硅层上的多晶硅层，剩余的多晶硅形成结构的机械或光学元件; 暴露单晶硅层的选定区域; 并释放形成的结构。

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