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    • 2. 发明授权
    • Electromechanical memory cell
    • 机电式记忆体
    • US06473361B1
    • 2002-10-29
    • US09709096
    • 2000-11-10
    • Jingkuang ChenFeixia PanJoel A. Kubby
    • Jingkuang ChenFeixia PanJoel A. Kubby
    • G11C800
    • G11C23/00B81B3/0054B81B2203/0118B82Y10/00G11B9/14H01H59/0009H01H2001/0047H01H2037/008
    • A low power, nonvolatile microelectromechanical memory cell stores data. This memory cell uses a pair of cantilevers, to store a bit of information. The on and off state of this mechanical latch is switched by using, for example, electrostatic forces applied sequentially on the two cantilevers. The cantilevers are partially overlapping. Changing the relative position of the cantilevers determines whether they are electrically conducting or not. One state represents a logical “1”. The other state represents a logical “0”. After a bit of data is written, the cantilevers are locked by mechanical forces inherent in the cantilevers and will not change state unless a sequential electrical writing signal is applied. The sequential nature of the required writing signal makes inadvertent or noise related data corruption highly unlikely. This MEMS memory cell can be implemented, for example, using a three-polysilicon-layer surface micro-machining process. The mechanical nature of the memory cell makes the cell immune to radiation. The cell is compatible with existing VLSI processes. Therefore monolithic memory devices comprising, for example, a plurality of the memory cells, read/write circuitry, and I/O circuitry, can be made using inexpensive, standard processes. The memory devices can be used in almost any electronic device requiring memory. For example the memory device is used in document processors, cell phones and satellites.
    • 低功率,非易失性微机电存储单元存储数据。 该存储单元使用一对悬臂来存储一些信息。 通过使用例如依次施加在两个悬臂上的静电力来切换该机械闩锁的开和关状态。 悬臂部分重叠。 改变悬臂的相对位置确定它们是否导电。 一个状态代表逻辑“1”。 另一个状态表示逻辑“0”。 在写入一些数据之后,悬臂由悬臂中固有的机械力锁定,除非应用顺序的电气写入信号,否则不会改变状态。 所需写入信号的顺序性质使得无意或噪声相关的数据损坏非常不可能。 该MEMS存储单元可以例如使用三晶硅层表面微加工工艺来实现。 记忆细胞的机械性质使得细胞免受辐射。 该小区与现有的VLSI过程兼容。 因此,可以使用廉价的标准工艺来制造包括例如多个存储单元,读/写电路和I / O电路的单片存储器件。 存储器件可用于几乎任何需要存储器的电子设备中。 例如,存储器件用于文件处理器,蜂窝电话和卫星。