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1. 发明申请

US20080121916A1 METHOD OF FORMING A METAL CONTACT AND PASSIVATION OF A SEMICONDUCTOR FEATURE 有权
标题翻译：形成金属接触的方法和半导体特性的钝化
公开(公告)号：US20080121916A1
公开(公告)日：2008-05-29
申请号：US11939227
申请日：2007-11-13
申请人： Jinghua TENG , Ee Leong Lim , Soo Jin Chua
发明人： Jinghua TENG , Ee Leong Lim , Soo Jin Chua
IPC分类号： H01S5/22 , H01L21/4763 , H01L33/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/385 , H01S5/0282 , H01S5/22
摘要： A method of forming a metal contact and passivation of a semiconductor feature, and devices made using the method. The method comprises the steps of forming a dielectric mask on a semiconductor substrate utilising photolithography processes; etching the semiconductor substrate such that one or more features are formed underneath respective portions of the dielectric mask; depositing a passivation layer on the substrate with the dielectric mask in place above the features; subjecting the substrate to an etchant such that the dielectric mask is etched at a higher rate than the passivation layer, whereby portions of the passivation layer deposited on the dielectric mask are lifted off from the substrate; and depositing a metal layer on the substrate including over the remaining passivation layer and exposed portions of the features.
摘要翻译：一种形成半导体特征的金属接触和钝化的方法，以及使用该方法制造的器件。该方法包括以下步骤：利用光刻工艺在半导体衬底上形成介电掩模; 蚀刻半导体衬底，使得一个或多个特征形成在介电掩模的各个部分下方; 在衬底上沉积钝化层，其中介电掩模位于特征上方; 使衬底经受蚀刻剂，使得以比钝化层更高的速率蚀刻介电掩模，由此沉积在介电掩模上的钝化层的一部分从衬底上提出; 以及在所述衬底上沉积金属层，所述金属层包括在剩余的钝化层上并且所述特征的暴露部分。

2. 发明授权

US07598104B2 Method of forming a metal contact and passivation of a semiconductor feature 有权
标题翻译：形成金属接触的方法和半导体特征的钝化
公开(公告)号：US07598104B2
公开(公告)日：2009-10-06
申请号：US11939227
申请日：2007-11-13
申请人： Jinghua Teng , Ee Leong Lim , Soo Jin Chua
发明人： Jinghua Teng , Ee Leong Lim , Soo Jin Chua
IPC分类号： H01L21/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/385 , H01S5/0282 , H01S5/22
摘要： A method of forming a metal contact and passivation of a semiconductor feature, and devices made using the method. The method comprises the steps of forming a dielectric mask on a semiconductor substrate utilising photolithography processes; etching the semiconductor substrate such that one or more features are formed underneath respective portions of the dielectric mask; depositing a passivation layer on the substrate with the dielectric mask in place above the features; subjecting the substrate to an etchant such that the dielectric mask is etched at a higher rate than the passivation layer, whereby portions of the passivation layer deposited on the dielectric mask are lifted off from the substrate; and depositing a metal layer on the substrate including over the remaining passivation layer and exposed portions of the features.
摘要翻译：一种形成半导体特征的金属接触和钝化的方法，以及使用该方法制造的器件。该方法包括以下步骤：利用光刻工艺在半导体衬底上形成介电掩模; 蚀刻半导体衬底，使得一个或多个特征形成在介电掩模的各个部分下方; 在衬底上沉积钝化层，其中介电掩模位于特征上方; 使衬底经受蚀刻剂，使得以比钝化层更高的速率蚀刻介电掩模，由此沉积在介电掩模上的钝化层的一部分从衬底上提出; 以及在所述衬底上沉积金属层，所述金属层包括在剩余的钝化层上并且所述特征的暴露部分。

3. 发明申请

US20120142170A1 METHOD OF FORMING PHOTONIC CRYSTALS 审中-公开
标题翻译：形成光子晶体的方法
公开(公告)号：US20120142170A1
公开(公告)日：2012-06-07
申请号：US13377521
申请日：2010-06-09
申请人： Jinghua Teng , Eo Lim , Soo Jin Chua , Soo Seng Nirman Ang
发明人： Jinghua Teng , Eo Lim , Soo Jin Chua , Soo Seng Nirman Ang
IPC分类号： H01L21/20
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/136 , G02B2006/12176
摘要： According to an embodiment of the present invention, a method of forming photonic crystals is provided. The method includes: forming a layer arrangement on a support substrate. The layer arrangement includes a first partial layer arrangement and a second partial layer arrangement, wherein the second partial layer arrangement is disposed over the first partial layer arrangement, wherein each partial layer arrangement comprises a first layer and a second layer, wherein the second layer is disposed over the first layer, and wherein the material of the second layer has a different etching characteristic than the material of the first layer. The method further includes removing at least one portion of the second layer and removing the first layer, wherein forming the layer arrangement occurs prior to removing the at least one portion of the second layer and the first layer.
摘要翻译：根据本发明的实施例，提供了形成光子晶体的方法。该方法包括：在支撑衬底上形成层布置。层布置包括第一部分层布置和第二部分层布置，其中第二部分层布置设置在第一部分层布置之上，其中每个部分层布置包括第一层和第二层，其中第二层是设置在所述第一层上，并且其中所述第二层的材料具有与所述第一层的材料不同的蚀刻特性。该方法还包括去除第二层的至少一部分并去除第一层，其中形成层布置发生在去除第二层和第一层的至少一部分之前。

4. 发明申请

US20110294281A1 METHOD OF AT LEAST PARTIALLY RELEASING AN EPITAXIAL LAYER 有权
标题翻译：至少部分释放外延层的方法
公开(公告)号：US20110294281A1
公开(公告)日：2011-12-01
申请号：US13130173
申请日：2009-11-19
申请人： Keyan Zang , Jinghua Teng , Soo Jin Chua
发明人： Keyan Zang , Jinghua Teng , Soo Jin Chua
IPC分类号： H01L21/20
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02521 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L21/02664 , H01L33/007 , H01L33/0079 , H01L33/20 , Y10S977/742
摘要： A method of at least partially releasing an epitaxial layer of a material from a substrate. The method comprises the steps of: forming a patterned sacrificial layer on the substrate such that the substrate is partially exposed and partially covered by the sacrificial layer; growing the epitaxial layer on the patterned sacrificial layer by nano-epitaxial lateral overgrowth such that the epitaxial layer is formed above an intermediate layer comprising the patterned sacrificial layer and said material; and selectively etching the patterned sacrificial layer such that the epitaxial layer is at least partially released from the substrate.
摘要翻译：从衬底至少部分地释放材料的外延层的方法。该方法包括以下步骤：在衬底上形成图案化的牺牲层，使得衬底被部分地暴露并被牺牲层部分地覆盖; 通过纳米外延横向过度生长在图案化的牺牲层上生长外延层，使得外延层形成在包括图案化的牺牲层和所述材料的中间层的上方; 并且选择性地蚀刻图案化的牺牲层，使得外延层至少部分地从衬底上释放出来。

5. 发明授权

US08859399B2 Method of at least partially releasing an epitaxial layer 有权
标题翻译：至少部分地释放外延层的方法
公开(公告)号：US08859399B2
公开(公告)日：2014-10-14
申请号：US13130173
申请日：2009-11-19
申请人： Keyan Zang , Jinghua Teng , Soo Jin Chua
发明人： Keyan Zang , Jinghua Teng , Soo Jin Chua
IPC分类号： H01L21/02 , H01L33/00 , H01L33/20
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02521 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L21/02664 , H01L33/007 , H01L33/0079 , H01L33/20 , Y10S977/742
摘要： A method of at least partially releasing an epitaxial layer of a material from a substrate. The method comprises the steps of: forming a patterned sacrificial layer on the substrate such that the substrate is partially exposed and partially covered by the sacrificial layer; growing the epitaxial layer on the patterned sacrificial layer by nano-epitaxial lateral overgrowth such that the epitaxial layer is formed above an intermediate layer comprising the patterned sacrificial layer and said material; and selectively etching the patterned sacrificial layer such that the epitaxial layer is at least partially released from the substrate.
摘要翻译：从衬底至少部分地释放材料的外延层的方法。该方法包括以下步骤：在衬底上形成图案化的牺牲层，使得衬底被部分地暴露并被牺牲层部分地覆盖; 通过纳米外延横向过度生长在图案化的牺牲层上生长外延层，使得外延层形成在包括图案化的牺牲层和所述材料的中间层的上方; 并且选择性地蚀刻图案化的牺牲层，使得外延层至少部分地从衬底上释放出来。

6. 发明申请

US20110114970A1 LIGHT EMITTING DIODE STRUCTURE, A LAMP DEVICE AND A METHOD OF FORMING A LIGHT EMITTING DIODE STRUCTURE 审中-公开
标题翻译：发光二极管结构，灯装置和形成发光二极管结构的方法
公开(公告)号：US20110114970A1
公开(公告)日：2011-05-19
申请号：US12934710
申请日：2008-04-23
申请人： Jinghua Teng , Soo Seng Norman Ang , Soo Jin Chua
发明人： Jinghua Teng , Soo Seng Norman Ang , Soo Jin Chua
IPC分类号： H01L33/08 , H01L33/60 , H01L33/44
CPC分类号： H01L33/46 , G02F1/133603 , H01L25/0756 , H01L33/405 , H01L33/64 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode structure, a lamp device and a method of forming a light emitting diode structure are provided. The structure has a substrate coated with a first reflective material; an electrode coated with a second reflective material, one or more layers of light emitting material, the layers disposed between the substrate and electrode; wherein in use, the first reflective material and second reflective material reflects light out of the structure via at least one light emitting surface and in a direction away from the electrode.
摘要翻译：提供了发光二极管结构，灯装置和形成发光二极管结构的方法。该结构具有涂覆有第一反射材料的基底; 涂覆有第二反射材料的电极，一层或多层发光材料，所述层设置在所述基底和电极之间; 其中在使用中，所述第一反射材料和所述第二反射材料经由至少一个发光表面并且远离所述电极的方向将光反射出所述结构。

7. 发明授权

US08603825B2 Sensor for measuring gas permeability of a test material 有权
标题翻译：用于测量测试材料的透气度的传感器
公开(公告)号：US08603825B2
公开(公告)日：2013-12-10
申请号：US10594789
申请日：2004-03-31
申请人： Soo Jin Chua , Senthil Kumar Ramadas , Xinbo He
发明人： Soo Jin Chua , Senthil Kumar Ramadas , Xinbo He
IPC分类号： G01N15/08 , B01J19/00
CPC分类号： G01N15/0826 , G01N27/121
摘要： A sensor for measuring gas permeability of a test material, comprising: an electrically conductive sensing element that comprises a water and/or oxygen sensitive material, wherein the reaction of said material with water or oxygen when the sensing element is contacted with water and/or oxygen results in a change in the electrical conductivity of the sensing element, and two electrodes electrically connected to the sensing element.
摘要翻译：一种用于测量测试材料的透气性的传感器，包括：导电感测元件，其包括水和/或氧敏感材料，其中当感测元件与水接触时，所述材料与水或氧的反应和/或氧导致感测元件的电导率的变化，以及电连接到感测元件的两个电极。

8. 发明授权

US08211321B2 Method for fabricating micro and nano structures 失效
标题翻译：制造微结构和纳米结构的方法
公开(公告)号：US08211321B2
公开(公告)日：2012-07-03
申请号：US12938973
申请日：2010-11-03
申请人： Benzhong Wang , Soo Jin Chua
发明人： Benzhong Wang , Soo Jin Chua
IPC分类号： B29D11/00
CPC分类号： B29D11/00365 , B82Y20/00 , B82Y30/00 , G02B3/0012 , G02B3/0056 , Y10S977/888 , Y10T428/24165 , Y10T428/24893 , Y10T428/24909
摘要： A method of forming an array of selectively shaped optical elements on a substrate, the method including the steps of providing the substrate, the substrate having an optical layer placed thereon; placing a layer of particles on the optical layer; performing an etching cycle. The cycle includes the steps of: etching the layer of particles, using a first etching process so as to reduce the size of the particles within the layer, then; simultaneously etching the optical layer and the layer of particles, using a second etching process, the further reducing particles forming a mask over areas of the optical layer to create discrete optical elements from the optical layer.
摘要翻译：一种在衬底上形成选择性地成形的光学元件的阵列的方法，所述方法包括以下步骤：提供衬底，所述衬底具有放置在其上的光学层; 在光学层上放置一层颗粒; 执行蚀刻循环。该循环包括以下步骤：使用第一蚀刻工艺蚀刻颗粒层，以减小层内的颗粒的尺寸，然后; 使用第二蚀刻工艺同时蚀刻光学层和颗粒层，在光学层的区域上形成进一步的还原颗粒形成掩模以从光学层产生离散的光学元件。

9. 发明授权

US07910937B2 Method and structure for fabricating III-V nitride layers on silicon substrates 失效
标题翻译：在硅衬底上制造III-V族氮化物层的方法和结构
公开(公告)号：US07910937B2
公开(公告)日：2011-03-22
申请号：US11344472
申请日：2006-02-01
申请人： Peng Chen , Soo Jin Chua , Zhonglin Miao , Sudhiranjan Tripathy
发明人： Peng Chen , Soo Jin Chua , Zhonglin Miao , Sudhiranjan Tripathy
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01L21/02381 , H01L21/02458 , H01L21/02491 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007 , H01L33/04
摘要： A method and structure for fabricating III-V nitride layers on silicon substrates includes a substrate, a transition structure having AlGaN, AlN and GaN layers, and a superlattice structure having AlGaN and GaN layers. In the invention, the large lattice mismatch (17%) between GaN and silicon is solved by using AlN as the first buffer layer with a 5:4 coincidence between AlN(0001) and Si(111) lattice to reduce the lattice mismatch to 1.3%.
摘要翻译：用于在硅衬底上制造III-V族氮化物层的方法和结构包括衬底，具有AlGaN，AlN和GaN层的过渡结构，以及具有AlGaN和GaN层的超晶格结构。在本发明中，通过使用AlN作为第一缓冲层，在AlN（0001）和Si（111）晶格之间具有5:4的一致性来解决GaN和硅之间的大晶格失配（17％），以将晶格失配减小到1.3 ％。

10. 发明授权

US07419842B2 Encapsulation of electroluminescent devices with shaped spacers 失效
标题翻译：具有成型间隔物的电致发光器件的封装
公开(公告)号：US07419842B2
公开(公告)日：2008-09-02
申请号：US11674098
申请日：2007-02-12
申请人： Mark Auch , Ewald Guenther , Soo Jin Chua
发明人： Mark Auch , Ewald Guenther , Soo Jin Chua
IPC分类号： H01L21/00
CPC分类号： H01L51/525 , H01L27/3241 , H01L33/483 , H01L51/5246
摘要： A method of encapsulating a device is disclosed. Spacer particles are randomly located in a device region to prevent a cap mounted on the substrate from contacting the active components when pressure is applied to the cap, thereby protecting the active components from damage. The spacer particles comprise a base and an upper portion, the base being at least equal to or wider than the upper portion.
摘要翻译：公开了封装装置的方法。间隔物颗粒随机地位于装置区域中，以防止当将压力施加到盖子上时，安装在基板上的盖子与活性组分接触，从而保护活性成分免受损坏。间隔物颗粒包括基部和上部，基部至少等于或大于上部。

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