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    • 1. 发明申请
    • METHOD OF FORMING PHOTONIC CRYSTALS
    • 形成光子晶体的方法
    • US20120142170A1
    • 2012-06-07
    • US13377521
    • 2010-06-09
    • Jinghua TengEo LimSoo Jin ChuaSoo Seng Nirman Ang
    • Jinghua TengEo LimSoo Jin ChuaSoo Seng Nirman Ang
    • H01L21/20
    • G02B6/1225B82Y20/00G02B6/136G02B2006/12176
    • According to an embodiment of the present invention, a method of forming photonic crystals is provided. The method includes: forming a layer arrangement on a support substrate. The layer arrangement includes a first partial layer arrangement and a second partial layer arrangement, wherein the second partial layer arrangement is disposed over the first partial layer arrangement, wherein each partial layer arrangement comprises a first layer and a second layer, wherein the second layer is disposed over the first layer, and wherein the material of the second layer has a different etching characteristic than the material of the first layer. The method further includes removing at least one portion of the second layer and removing the first layer, wherein forming the layer arrangement occurs prior to removing the at least one portion of the second layer and the first layer.
    • 根据本发明的实施例,提供了形成光子晶体的方法。 该方法包括:在支撑衬底上形成层布置。 层布置包括第一部分层布置和第二部分层布置,其中第二部分层布置设置在第一部分层布置之上,其中每个部分层布置包括第一层和第二层,其中第二层是 设置在所述第一层上,并且其中所述第二层的材料具有与所述第一层的材料不同的蚀刻特性。 该方法还包括去除第二层的至少一部分并去除第一层,其中形成层布置发生在去除第二层和第一层的至少一部分之前。