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1. 发明授权

US09011705B2 Method of forming a polymer substrate with variable refractive index sensitivity 有权
$Method of forming a polymer substrate with variable refractive index sensitivity$
标题翻译：形成具有可变折射率灵敏度的聚合物基材的方法
公开(公告)号：US09011705B2
公开(公告)日：2015-04-21
申请号：US13559533
申请日：2012-07-26
申请人： Kwok Wei Shah , Xiaodi Su , Soo Jin Chua , Hong Yee Low
发明人： Kwok Wei Shah , Xiaodi Su , Soo Jin Chua , Hong Yee Low
IPC分类号： B44C1/22 , G01N21/552
CPC分类号： G01N21/554 , B44C1/227 , Y10S977/888 , Y10T428/24331
摘要： The present invention relates to a method of forming polymer substrate with variable refractive index sensitivity, the method comprising the steps of: (a) contacting a metal-coated patterned mold with a polymer substrate at a temperature sufficient to deform said polymer substrate to thereby deposit a patterned mask of a metal film on the polymer substrate; and (b) etching away portions of said polymer substrate not covered by said patterned mask under conditions to form a region of variable refractive index sensitivity on said polymer substrate.
摘要翻译：本发明涉及一种形成具有可变折射率灵敏度的聚合物基材的方法，所述方法包括以下步骤：（a）使金属涂覆的图案化模具与聚合物基材在足以使所述聚合物基材变形以使其沉积的温度下接触在聚合物基材上的金属膜的图案化掩模; 和（b）在所述聚合物基材上形成可变折射率敏感区域的条件下，蚀刻除去未被所述图案化掩模覆盖的所述聚合物基材的部分。

2. 发明申请

US20130295325A1 METHOD OF FORMING A POLYMER SUBSTRATE WITH VARIABLE REFRACTIVE INDEX SENSITIVITY 有权
标题翻译：形成具有可变折射率敏感性的聚合物基板的方法
公开(公告)号：US20130295325A1
公开(公告)日：2013-11-07
申请号：US13559533
申请日：2012-07-26
申请人： Kwok Wei SHAH , Xiaodi SU , Soo Jin CHUA , Hong Yee LOW
发明人： Kwok Wei SHAH , Xiaodi SU , Soo Jin CHUA , Hong Yee LOW
IPC分类号： G01N21/55 , B44C1/22
CPC分类号： G01N21/554 , B44C1/227 , Y10S977/888 , Y10T428/24331
摘要： The present invention relates to a method of forming polymer substrate with variable refractive index sensitivity, the method comprising the steps of: (a) contacting a metal-coated patterned mold with a polymer substrate at a temperature sufficient to deform said polymer substrate to thereby deposit a patterned mask of a metal film on the polymer substrate; and (b) etching away portions of said polymer substrate not covered by said patterned mask under conditions to form a region of variable refractive index sensitivity on said polymer substrate.
摘要翻译：本发明涉及一种形成具有可变折射率灵敏度的聚合物基材的方法，所述方法包括以下步骤：（a）使金属涂覆的图案化模具与聚合物基材在足以使所述聚合物基材变形以使其沉积的温度下接触在聚合物基材上的金属膜的图案化掩模; 和（b）在所述聚合物基材上形成可变折射率敏感区域的条件下，蚀刻除去未被所述图案化掩模覆盖的所述聚合物基材的部分。

3. 发明申请

US20120142170A1 METHOD OF FORMING PHOTONIC CRYSTALS 审中-公开
标题翻译：形成光子晶体的方法
公开(公告)号：US20120142170A1
公开(公告)日：2012-06-07
申请号：US13377521
申请日：2010-06-09
申请人： Jinghua Teng , Eo Lim , Soo Jin Chua , Soo Seng Nirman Ang
发明人： Jinghua Teng , Eo Lim , Soo Jin Chua , Soo Seng Nirman Ang
IPC分类号： H01L21/20
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/136 , G02B2006/12176
摘要： According to an embodiment of the present invention, a method of forming photonic crystals is provided. The method includes: forming a layer arrangement on a support substrate. The layer arrangement includes a first partial layer arrangement and a second partial layer arrangement, wherein the second partial layer arrangement is disposed over the first partial layer arrangement, wherein each partial layer arrangement comprises a first layer and a second layer, wherein the second layer is disposed over the first layer, and wherein the material of the second layer has a different etching characteristic than the material of the first layer. The method further includes removing at least one portion of the second layer and removing the first layer, wherein forming the layer arrangement occurs prior to removing the at least one portion of the second layer and the first layer.
摘要翻译：根据本发明的实施例，提供了形成光子晶体的方法。该方法包括：在支撑衬底上形成层布置。层布置包括第一部分层布置和第二部分层布置，其中第二部分层布置设置在第一部分层布置之上，其中每个部分层布置包括第一层和第二层，其中第二层是设置在所述第一层上，并且其中所述第二层的材料具有与所述第一层的材料不同的蚀刻特性。该方法还包括去除第二层的至少一部分并去除第一层，其中形成层布置发生在去除第二层和第一层的至少一部分之前。

4. 发明申请

US20120112218A1 Light Emitting Diode with Polarized Light Emission 审中-公开
标题翻译：具有偏振光发射的发光二极管
公开(公告)号：US20120112218A1
公开(公告)日：2012-05-10
申请号：US12939322
申请日：2010-11-04
申请人： Jinghua Teng , Soo-Jin Chua , Liang Zhang , Liyuan Deng
发明人： Jinghua Teng , Soo-Jin Chua , Liang Zhang , Liyuan Deng
IPC分类号： H01L33/38
CPC分类号： H01L33/38 , H01L33/46 , H01L33/508 , H01L2933/0091
摘要： An apparatus for emitting polarized light and a method for fabricating such apparatus are provided. The apparatus includes a surface emission light emitting diode (LED), a first electrode, and a sub-wavelength metal grating (SWMG). The surface emission LED includes a first contact surface and a second contact surface. The first electrode is coupled to the first contact surface. The SWMG is formed on a surface of the surface emission LED.
摘要翻译：提供了一种用于发射偏振光的装置及其制造方法。该装置包括表面发射发光二极管（LED），第一电极和亚波长金属光栅（SWMG）。表面发射LED包括第一接触表面和第二接触表面。第一电极耦合到第一接触表面。 SWMG形成在表面发射LED的表面上。

5. 发明申请

US20110294281A1 METHOD OF AT LEAST PARTIALLY RELEASING AN EPITAXIAL LAYER 有权
标题翻译：至少部分释放外延层的方法
公开(公告)号：US20110294281A1
公开(公告)日：2011-12-01
申请号：US13130173
申请日：2009-11-19
申请人： Keyan Zang , Jinghua Teng , Soo Jin Chua
发明人： Keyan Zang , Jinghua Teng , Soo Jin Chua
IPC分类号： H01L21/20
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02521 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L21/02664 , H01L33/007 , H01L33/0079 , H01L33/20 , Y10S977/742
摘要： A method of at least partially releasing an epitaxial layer of a material from a substrate. The method comprises the steps of: forming a patterned sacrificial layer on the substrate such that the substrate is partially exposed and partially covered by the sacrificial layer; growing the epitaxial layer on the patterned sacrificial layer by nano-epitaxial lateral overgrowth such that the epitaxial layer is formed above an intermediate layer comprising the patterned sacrificial layer and said material; and selectively etching the patterned sacrificial layer such that the epitaxial layer is at least partially released from the substrate.
摘要翻译：从衬底至少部分地释放材料的外延层的方法。该方法包括以下步骤：在衬底上形成图案化的牺牲层，使得衬底被部分地暴露并被牺牲层部分地覆盖; 通过纳米外延横向过度生长在图案化的牺牲层上生长外延层，使得外延层形成在包括图案化的牺牲层和所述材料的中间层的上方; 并且选择性地蚀刻图案化的牺牲层，使得外延层至少部分地从衬底上释放出来。

6. 发明申请

US20110132449A1 MULTILAYER FILM FOR ENCAPSULATING OXYGEN AND/OR MOISTURE SENSITIVE ELECTRONIC DEVICES 审中-公开
标题翻译：用于包封氧气和/或水分敏感电子设备的多层膜
公开(公告)号：US20110132449A1
公开(公告)日：2011-06-09
申请号：US12937259
申请日：2009-04-08
申请人： Senthil Kumar Ramadas , Soo Jin Chua , Lin Karen Ke
发明人： Senthil Kumar Ramadas , Soo Jin Chua , Lin Karen Ke
IPC分类号： H01L23/28 , H01L33/52 , H01L31/0203 , H01L21/56 , B32B27/06 , B32B27/20 , B05C15/00 , B82Y30/00
CPC分类号： H01L51/56 , B32B27/20 , B32B2457/206 , B82Y30/00 , H01L51/448 , H01L51/524 , H01L51/5256 , H01L51/5259 , H01L51/5284 , H01L2251/5369 , H05B33/04 , H05B33/10 , Y10T428/24995 , Y10T428/25 , Y10T428/31504 , Y10T428/31507 , Y10T428/31511 , Y10T428/31533 , Y10T428/3154 , Y10T428/31551 , Y10T428/31663 , Y10T428/31678 , Y10T428/31721 , Y10T428/31725 , Y10T428/31931 , Y10T428/31935 , Y10T428/31938
摘要： The present invention refers to a multilayer barrier film capable of encapsulating a moisture and/or oxygen sensitive electronic or optoelectronic device, the barrier film comprises at least one nanostructured layer comprising reactive nanoparticles capable of interacting with moisture and/or oxygen, the reactive nanoparticles being distributed within a polymeric binder, and at least one ultraviolet light neutralizing layer comprising a material capable of absorbing ultraviolet light, thereby limiting the transmission of ultraviolet light through the barrier film
摘要翻译：本发明涉及能够包封水分和/或氧敏感的电子或光电子器件的多层阻挡膜，阻挡膜包括至少一个包含能够与水分和/或氧相互作用的反应性纳米结构的纳米结构层，所述反应性纳米颗粒是分布在聚合物粘合剂中，以及至少一种紫外线中和层，其包含能够吸收紫外光的材料，从而限制紫外光透过阻挡膜

7. 发明申请

US20100227437A1 SEMICONDUCTOR DEVICES GROWN IN SPHERICAL CAVITY ARRAYS AND ITS PREPARATION METHOD 有权
标题翻译：球形阵列中的半导体器件及其制备方法
公开(公告)号：US20100227437A1
公开(公告)日：2010-09-09
申请号：US11385528
申请日：2006-03-21
申请人： Benzhong Wang , Soo Jin Chua
发明人： Benzhong Wang , Soo Jin Chua
IPC分类号： H01L21/56
CPC分类号： B81C1/00047 , B81B2207/056 , B81C2201/0109 , H01L33/18 , H01S5/1042 , H01S5/1071
摘要： A method for fabricating an array of semiconductor devices comprising the steps of providing a non-metallic substrate, placing a layer of spheres on said substrate, reducing diameter of the spheres, encapsulating the spheres in a matrix of rigid material, finishing an upper surface of said matrix to expose a portion of said spheres, removing the spheres to form an array of cavities within said matrix, and forming features in said cavities in contact with said substrate so as to form the device.
摘要翻译：一种用于制造半导体器件阵列的方法，包括以下步骤：提供非金属基底，将一层球体放置在所述基底上，减小所述球体的直径，将所述球体包封在刚性材料的基体中，所述基体暴露所述球体的一部分，去除所述球体以在所述基体内形成空腔阵列，以及在与所述基底接触的所述空腔中形成特征以形成所述装置。

8. 发明申请

US20090302308A1 GROUP III NITRIDE WHITE LIGHT EMITTING DIODE 失效
标题翻译：第III组氮化物白光发光二极管
公开(公告)号：US20090302308A1
公开(公告)日：2009-12-10
申请号：US12442180
申请日：2006-09-22
申请人： Soo-Jin Chua , Peng Chen , Zhen Chen , Eiryo Takasuka
发明人： Soo-Jin Chua , Peng Chen , Zhen Chen , Eiryo Takasuka
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L33/305 , H01L33/32 , H01S5/3412 , H01S5/34333
摘要： A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an InxGa1-xN quantum well layer, an InyGa1-yN barrier layer (x>0.3 or x=0.3), and InzGa1-zN quantum dots, where x
摘要翻译：白色发光二极管包括n型半导体层，在n型半导体层上形成的一个或多个量子阱结构，形成在量子阱结构上的p型半导体层，形成在p型半导体层上的第一电极，和形成在n型半导体层的至少一部分上的第二电极。每个量子阱结构包括In x Ga 1-x N量子阱层，In y Ga 1-y N势垒层（x> 0.3或x = 0.3）和In x Ga 1-z N量子点，其中x

9. 发明申请

US20090001416A1 Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD) 审中-公开
标题翻译：通过金属有机化学气相沉积（MOCVD）在氮化镓（GaN）模板上生长氮化铟镓（InGaN）
公开(公告)号：US20090001416A1
公开(公告)日：2009-01-01
申请号：US11823756
申请日：2007-06-28
申请人： Soo Jin Chua , Haryono Hartono , Chew Beng Soh
发明人： Soo Jin Chua , Haryono Hartono , Chew Beng Soh
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L21/02658 , C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/0075 , H01L33/16 , H01L33/32
摘要： Si-doped porous GaN is fabricated by UV-enhanced Pt-assisted electrochemical etching and together with a low-temperature grown buffer layer are utilized as the template for InGaN growth. The porous network in GaN shows nanostructures formed on the surface. Subsequent growth of InGaN shows that it is relaxed on these nanostructures as the area on which the growth takes place is very small. The strain relaxation favors higher indium incorporation. Besides, this porous network creates a relatively rough surface of GaN to modify the surface energy which can enhance the nucleation of impinging indium atoms thereby increasing indium incorporation. It shifts the luminescence from 445 nm for a conventionally grown InGaN structure to 575 nm and enhances the intensity by more than two-fold for the growth technique in the present invention under the same growth conditions. There is also a spectral broadening of the output extending from 480 nm to 720 nm.
摘要翻译： Si掺杂多孔GaN通过紫外增强Pt辅助电化学蚀刻制造，并与低温生长缓冲层一起被用作InGaN生长的模板。 GaN中的多孔网络显示出在表面上形成的纳米结构。 InGaN的后续生长表明，随着生长发生的区域非常小，它们在这些纳米结构上被放宽。应变松弛有利于较高的铟掺入。此外，该多孔网络产生GaN的相对粗糙的表面以改变表面能，这可以增强入射铟原子的成核，从而增加铟掺入。它将常规生长的InGaN结构的发光从445nm偏移到575nm，并且在相同的生长条件下，本发明的生长技术的强度提高了两倍以上。还有从480nm延伸到720nm的输出的谱扩展。

10. 发明申请

US20080121916A1 METHOD OF FORMING A METAL CONTACT AND PASSIVATION OF A SEMICONDUCTOR FEATURE 有权
标题翻译：形成金属接触的方法和半导体特性的钝化
公开(公告)号：US20080121916A1
公开(公告)日：2008-05-29
申请号：US11939227
申请日：2007-11-13
申请人： Jinghua TENG , Ee Leong Lim , Soo Jin Chua
发明人： Jinghua TENG , Ee Leong Lim , Soo Jin Chua
IPC分类号： H01S5/22 , H01L21/4763 , H01L33/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/385 , H01S5/0282 , H01S5/22
摘要： A method of forming a metal contact and passivation of a semiconductor feature, and devices made using the method. The method comprises the steps of forming a dielectric mask on a semiconductor substrate utilising photolithography processes; etching the semiconductor substrate such that one or more features are formed underneath respective portions of the dielectric mask; depositing a passivation layer on the substrate with the dielectric mask in place above the features; subjecting the substrate to an etchant such that the dielectric mask is etched at a higher rate than the passivation layer, whereby portions of the passivation layer deposited on the dielectric mask are lifted off from the substrate; and depositing a metal layer on the substrate including over the remaining passivation layer and exposed portions of the features.
摘要翻译：一种形成半导体特征的金属接触和钝化的方法，以及使用该方法制造的器件。该方法包括以下步骤：利用光刻工艺在半导体衬底上形成介电掩模; 蚀刻半导体衬底，使得一个或多个特征形成在介电掩模的各个部分下方; 在衬底上沉积钝化层，其中介电掩模位于特征上方; 使衬底经受蚀刻剂，使得以比钝化层更高的速率蚀刻介电掩模，由此沉积在介电掩模上的钝化层的一部分从衬底上提出; 以及在所述衬底上沉积金属层，所述金属层包括在剩余的钝化层上并且所述特征的暴露部分。

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