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    • 6. 发明授权
    • Method of fabricating thin film transistor by crystallization through metal layer forming source and drain electrodes
    • 通过金属层形成源极和漏极结晶化制造薄膜晶体管的方法
    • US08343796B2
    • 2013-01-01
    • US13206227
    • 2011-08-09
    • Ji-Su AhnSung-Chul Kim
    • Ji-Su AhnSung-Chul Kim
    • H01L21/00
    • H01L21/02532H01L21/02667H01L27/124H01L27/1281H01L27/3262H01L29/66757
    • A method of fabricating a thin film transistor includes patterning the amorphous semiconductor layer to form an amorphous semiconductor layer pattern, forming a gate electrode corresponding to the amorphous semiconductor layer pattern on a gate insulating layer, forming an interlayer insulating layer on the entire surface of the substrate, forming a first contact hole partially exposing the amorphous semiconductor layer pattern, forming a second contact hole partially exposing the gate electrode, and forming a metal layer on the entire surface of the substrate. The method also includes applying an electrical field to the metal layer such that a semiconductor layer is formed by crystallization of the amorphous semiconductor layer pattern, and patterning the metal layer to form source and drain electrodes that are insulated from the gate electrode and that are electrically connected with the semiconductor layer through the first contact hole.
    • 一种制造薄膜晶体管的方法,包括图案化非晶半导体层以形成非晶半导体层图案,在栅绝缘层上形成对应于非晶半导体层图案的栅电极,在该绝缘层的整个表面上形成层间绝缘层 形成部分暴露非晶半导体层图案的第一接触孔,形成部分暴露栅电极的第二接触孔,以及在基板的整个表面上形成金属层。 该方法还包括向金属层施加电场,使得通过非晶半导体层图案的结晶形成半导体层,并且图案化金属层以形成与栅电极绝缘的电极和漏电极,并且是电 通过第一接触孔与半导体层连接。