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1. 发明授权

US08921019B2 Positive photosensitive resin composition, and photosensitive resin layer and display device using the same 有权
标题翻译：正性感光性树脂组合物和感光性树脂层及使用其的显示装置
公开(公告)号：US08921019B2
公开(公告)日：2014-12-30
申请号：US13603479
申请日：2012-09-05
申请人： Ji-Yun Kwon , Jin-Hee Kang , Dae-Yun Kim , Sang-Kyeon Kim , Sang-Kyun Kim , Sang-Soo Kim , Kun-Bae Noh , Eun-Kyung Yoon , Jong-Hwa Lee , Jun-Ho Lee , Jin-Young Lee , Hwan-Sung Cheon , Hyun-Yong Cho , Chung-Beom Hong , Eun-Ha Hwang
发明人： Ji-Yun Kwon , Jin-Hee Kang , Dae-Yun Kim , Sang-Kyeon Kim , Sang-Kyun Kim , Sang-Soo Kim , Kun-Bae Noh , Eun-Kyung Yoon , Jong-Hwa Lee , Jun-Ho Lee , Jin-Young Lee , Hwan-Sung Cheon , Hyun-Yong Cho , Chung-Beom Hong , Eun-Ha Hwang
IPC分类号： G03F7/023
CPC分类号： G03F7/105 , G03F7/0233 , G03F7/0757
摘要： Disclosed are a positive photosensitive resin composition that includes (A) an alkali soluble resin including a polybenzoxazole precursor, a polyimide precursor, or a combination thereof, (B) a photosensitive diazoquinone compound, (C) a phenol compound, (D) at least one organic dye having an absorption wavelength of about 400 nm to about 700 nm, and (E) a solvent, wherein the organic dye (D) is included in an amount of about 1 to about 40 parts by weight based on about 100 parts by weight of the alkali soluble resin (A), and a photosensitive resin layer and a display device using the same.
摘要翻译：公开了一种正型感光性树脂组合物，其包含（A）包含聚苯并恶唑前体，聚酰亚胺前体或其组合的碱溶性树脂，（B）感光性重氮醌化合物，（C）酚化合物，（D）一种有机染料，具有约400nm至约700nm的吸收波长，和（E）溶剂，其中所述有机染料（D）的含量为约1至约40重量份，基于约100重量份碱溶性树脂（A）的重量和感光性树脂层以及使用其的显影装置。

2. 发明授权

US08735029B2 Positive photosensitive resin composition, and display device and organic light emitting device using the same 有权
标题翻译：正性感光性树脂组合物，显示装置及使用其的有机发光装置
公开(公告)号：US08735029B2
公开(公告)日：2014-05-27
申请号：US13603491
申请日：2012-09-05
申请人： Eun-Kyung Yoon , Eun-Ha Hwang , Jong-Hwa Lee , Ji-Yun Kwon , Dae-Yun Kim , Sang-Kyeon Kim , Sang-Kyun Kim , Sang-Soo Kim , Kun-Bae Noh , Jun-Ho Lee , Jin-Young Lee , Hyun-Yong Cho , Chung-Beom Hong
发明人： Eun-Kyung Yoon , Eun-Ha Hwang , Jong-Hwa Lee , Ji-Yun Kwon , Dae-Yun Kim , Sang-Kyeon Kim , Sang-Kyun Kim , Sang-Soo Kim , Kun-Bae Noh , Jun-Ho Lee , Jin-Young Lee , Hyun-Yong Cho , Chung-Beom Hong
IPC分类号： G03F7/023 , G03F7/022
CPC分类号： G03F7/0226 , G03F7/0233 , G03F7/0236 , G03F7/0755 , G03F7/085 , Y10S430/107
摘要： Disclosed are a positive photosensitive resin composition including (A) an alkali soluble resin including a polybenzoxazole precursor, a polyimide precursor, or a combination thereof, (B) a photosensitive diazoquinone compound, (C) a compound represented by the following Chemical Formula 1, and (D) a solvent, and a display device and an organic light emitting device using the same. The Chemical Formula 1 is the same as defined in the detailed description.
摘要翻译：公开了包含（A）包含聚苯并恶唑前体，聚酰亚胺前体或其组合的碱溶性树脂的正性感光性树脂组合物，（B）感光性重氮醌化合物，（C）由以下化学式1表示的化合物，和（D）溶剂，以及显示装置和使用其的有机发光装置。化学式1与详细描述中所定义的相同。

3. 发明授权

US09256118B2 Positive photosensitive resin composition 有权
标题翻译：正型感光性树脂组合物
公开(公告)号：US09256118B2
公开(公告)日：2016-02-09
申请号：US14236971
申请日：2012-07-17
申请人： Ji-Yun Kwon , Jong-Hwa Lee , Hyun-Yong Cho , Dae-Yun Kim , Sang-Kyeon Kim , Sang-Kyun Kim , Sang-Soo Kim , Eun-Kyung Yoon , Jun-Ho Lee , Jin-Young Lee , Hwan-Sung Cheon , Chung-Beom Hong , Eun-Ha Hwang
发明人： Ji-Yun Kwon , Jong-Hwa Lee , Hyun-Yong Cho , Dae-Yun Kim , Sang-Kyeon Kim , Sang-Kyun Kim , Sang-Soo Kim , Eun-Kyung Yoon , Jun-Ho Lee , Jin-Young Lee , Hwan-Sung Cheon , Chung-Beom Hong , Eun-Ha Hwang
IPC分类号： G03F7/023 , G03F7/38 , G03F7/105 , G03C1/61 , G03F7/022 , G03F7/075
CPC分类号： G03C1/61 , G03F7/0226 , G03F7/0233 , G03F7/0751 , G03F7/105
摘要： Disclosed is a positive photosensitive resin composition that includes (A) an alkali soluble resin selected from a polybenzoxazole precursor, a polyimide precursor, and a combination thereof, (B) a photosensitive diazoquinone compound, (C) a phenol compound, (D) an organic dye and (E) a solvent, wherein the organic dye (D) includes at least one red dye having an absorption wavelength of 590 to 700 nm, at least one yellow dye having an absorption wavelength of 550 to 590 nm, and at least one blue dye having an absorption wavelength of 450 to 500 nm.
摘要翻译：公开了一种正型感光性树脂组合物，其包含（A）选自聚苯并恶唑前体，聚酰亚胺前体及其组合的碱溶性树脂，（B）感光性重氮醌化合物，（C）酚化合物，（D）有机染料和（E）溶剂，其中有机染料（D）包括至少一种吸收波长为590-700nm的红色染料，至少一种吸收波长为550至590nm的黄色染料，至少一种蓝色染料，其吸收波长为450〜500nm。

4. 发明授权

US09343326B2 CMP slurry composition for polishing an organic layer and method of forming a semiconductor device using the same 有权
标题翻译：用于研磨有机层的CMP浆料组合物和使用其制备半导体器件的方法
公开(公告)号：US09343326B2
公开(公告)日：2016-05-17
申请号：US14825846
申请日：2015-08-13
申请人： Yun-Jeong Kim , Sang-Kyun Kim , Kwang-Bok Kim , Ye-Hwan Kim , Jung-Sik Choi , Choong-Ho Han , Gi-Sik Hong
发明人： Yun-Jeong Kim , Sang-Kyun Kim , Kwang-Bok Kim , Ye-Hwan Kim , Jung-Sik Choi , Choong-Ho Han , Gi-Sik Hong
IPC分类号： H01L21/302 , H01L21/3105 , C09K3/14 , H01L21/033 , H01L21/311 , H01L21/3213 , H01L27/115
CPC分类号： H01L21/31058 , C09G1/02 , C09K3/1463 , H01L21/0337 , H01L21/0338 , H01L21/31055 , H01L21/31144 , H01L21/32139 , H01L27/11582
摘要： A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.
摘要翻译：公开了一种用于抛光有机层的化学机械抛光（CMP）浆料组合物和使用其形成半导体器件的方法。 CMP浆料组合物可以包含0.001重量％至5重量％的氧化物抛光颗粒; 0.1至5重量％的氧化剂; 0〜5重量％的抛光调节剂; 0〜3重量％的表面活性剂; 0至3重量％的pH调节剂; 和79-99889重量％的去离子水。使用CMP浆料组合物可以使无硅有机层相对于氧化物层以高于6:1的选择性进行抛光。

5. 发明授权

US09312122B2 Rinse liquid for insulating film and method of rinsing insulating film 有权
标题翻译：用于绝缘膜的冲洗液和冲洗绝缘膜的方法
公开(公告)号：US09312122B2
公开(公告)日：2016-04-12
申请号：US14090003
申请日：2013-11-26
申请人： Jin-Hee Bae , Han-Song Lee , Wan-Hee Lim , Go-Un Kim , Taek-Soo Kwak , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Youn-Jin Cho , Kwen-Woo Han , Byeong-Gyu Hwang
发明人： Jin-Hee Bae , Han-Song Lee , Wan-Hee Lim , Go-Un Kim , Taek-Soo Kwak , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Youn-Jin Cho , Kwen-Woo Han , Byeong-Gyu Hwang
IPC分类号： H01L21/02 , C11D11/00 , C11D7/50 , H01L27/108 , H01L49/02 , C11D7/26
CPC分类号： H01L21/0206 , C08G77/54 , C08G77/62 , C09D183/14 , C09D183/16 , C11D7/266 , C11D7/5022 , C11D11/0047 , H01L21/02087 , H01L21/0209 , H01L21/02164 , H01L21/02214 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L27/1085 , H01L28/40
摘要： A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1:
摘要翻译：一种用于绝缘层的冲洗液，所述漂洗液包括由以下化学式1表示的溶剂：

6. 发明申请

US20100167212A1 RESIST UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME 审中-公开
标题翻译：耐蚀组合物及使用其制造集成电路装置的方法
公开(公告)号：US20100167212A1
公开(公告)日：2010-07-01
申请号：US12654742
申请日：2009-12-30
申请人： Hyeon-Mo Cho , Sang-Kyun Kim , Mi-Young Kim , Sang-Ran Koh , Hui-Chang Yun , Yong-Jin Chung , Jong-Seob Kim , In-Sun Jung
发明人： Hyeon-Mo Cho , Sang-Kyun Kim , Mi-Young Kim , Sang-Ran Koh , Hui-Chang Yun , Yong-Jin Chung , Jong-Seob Kim , In-Sun Jung
IPC分类号： G03F7/20 , C08L61/00 , C08L83/00 , C08K5/3432 , C08G77/00
CPC分类号： G03F7/11 , C08K5/54 , G03F7/0752
摘要： A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the resist underlayer composition including a solvent and an organosilane-based polymer, the organosilane-based polymer being a polymerization product of at least one first compound represented Chemical Formulae 1 to 3 and at least one second compound represented by Chemical Formulae 4 and 5.
摘要翻译：抗蚀剂下层组合物和半导体集成电路器件的制造方法，所述抗蚀剂底层组合物包含溶剂和有机硅烷系聚合物，所述有机硅烷类聚合物为至少一种化学式1〜3的第一化合物的聚合产物和由化学式4和5表示的至少一种第二化合物。

7. 发明授权

US07629260B2 Organosilane hardmask compositions and methods of producing semiconductor devices using the same 有权
标题翻译：有机硅烷硬掩模组合物及使用其的半导体器件的制造方法
公开(公告)号：US07629260B2
公开(公告)日：2009-12-08
申请号：US11608451
申请日：2006-12-08
申请人： Dong Seon Uh , Hui Chan Yun , Jin Kuk Lee , Chang Il Oh , Jong Seob Kim , Sang-Kyun Kim , Sang Hak Lim
发明人： Dong Seon Uh , Hui Chan Yun , Jin Kuk Lee , Chang Il Oh , Jong Seob Kim , Sang-Kyun Kim , Sang Hak Lim
IPC分类号： H01L21/302
CPC分类号： H01L21/0276 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/11
摘要： Provided herein are hardmask compositions that include an organosilane polymer prepared by the reaction of one or more compounds of Formula (I) Si(OR1)(OR2)(OR3)R4 wherein R1, R2 and R3 may each independently be alkyl acetoxy or oxime; and R4 may be hydrogen, alkyl, aryl or arylalkyl; and wherein the organosilane polymer has a polydispersity in a range of about 1.1 to about 2.
摘要翻译：本文提供了包含通过一种或多种式（I）Si（OR 1）（OR 2）（OR 3）（OR 3）R 4）的化合物反应制备的有机硅烷聚合物的硬掩模组合物，其中R 1，R 2和R 3可各自独立地为烷基乙酰氧基或肟; 并且R 4可以是氢，烷基，芳基或芳基烷基; 并且其中所述有机硅烷聚合物的多分散性在约1.1至约2的范围内。

8. 发明申请

US20060207188A1 Ceria abrasive for cmp 审中-公开
标题翻译：二氧化铈磨料为cmp
公开(公告)号：US20060207188A1
公开(公告)日：2006-09-21
申请号：US10550804
申请日：2004-05-14
申请人： Un-Gyu Paik , Jea-Gun Park , Sang-Kyun Kim , Takeo Katoh , Yong-Kook Park
发明人： Un-Gyu Paik , Jea-Gun Park , Sang-Kyun Kim , Takeo Katoh , Yong-Kook Park
IPC分类号： C09K3/14
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053
摘要： The present invention relates to a CMP abrasive comprising a ceria slurry and a chemical additive having two or more functional groups by mixing and synthesizing a polymeric molecule and a monomer. Also, the present invention relates to a method for a manufacturing CMP abrasive by providing a ceria slurry, manufacturing a chemical additive having two or more functional groups by mixing and synthesizing of the polymeric molecule and the monomer in a reactor, and mixing said slurry and said chemical additive. Therefore, when the abrasive according to the present invention is used as an STI CMP abrasive, it is possible to apply the abrasive to the patterning process required in the very large scale integration semiconductor process. Furthermore, the CMP abrasive of the present invention has a superior removal rate, superior polishing selectivity, superior within wafer non-uniformity (WIWNU), and minimized occurrence of micro scratches.
摘要翻译：本发明涉及通过混合和合成聚合物分子和单体，其包含二氧化铈浆料和具有两个或更多个官能团的化学添加剂的CMP磨料。另外，本发明涉及通过提供二氧化铈浆料制造CMP研磨剂的方法，通过在反应器中混合和合成聚合物分子和单体制备具有两个或多个官能团的化学添加剂，并将所述浆料和说化学添加剂。因此，当将根据本发明的研磨剂用作STI CMP研磨剂时，可以将磨料施加到非常大规模的集成半导体工艺中所需的图案化工艺。此外，本发明的CMP磨料具有优异的去除速度，优异的抛光选择性，在晶片不均匀性（WIWNU）内优异，并且微小划痕的发生最小化。

9. 发明授权

US09291899B2 Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same 有权
标题翻译：抗蚀剂底层组合物和使用其制造半导体集成电路器件的方法
公开(公告)号：US09291899B2
公开(公告)日：2016-03-22
申请号：US12654737
申请日：2009-12-30
申请人： Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
发明人： Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
IPC分类号： G03F7/075 , G03F7/09 , G03F7/11 , G03F7/30 , G03F7/36 , C08G77/50 , C08G77/52 , C08K5/00 , C08L83/04 , C08L83/14 , C09D183/04 , C09D183/14 , C08G77/12 , C08G77/14 , C08G77/16 , C08G77/18 , C08G77/20 , C08G77/24 , C08G77/26 , C08G77/00
CPC分类号： G03F7/0752 , C08G77/12 , C08G77/14 , C08G77/16 , C08G77/18 , C08G77/20 , C08G77/24 , C08G77/26 , C08G77/50 , C08G77/52 , C08G77/70 , C08K5/0008 , C08L83/04 , C08L83/14 , C09D183/04 , C09D183/14 , G03F7/0757 , G03F7/09 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/30 , G03F7/36
摘要： A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.
摘要翻译：抗蚀剂下层组合物和半导体集成电路器件的制造方法，所述组合物包括溶剂和有机硅烷聚合物，所述有机硅烷聚合物是至少一种由化学式1和2表示的第一化合物的缩聚产物和至少一种化学式3〜5表示的第二化合物。

10. 发明授权

US09240443B2 Process of preparing a gap filler agent, a gap filler agent prepared using same, and a method for manufacturing semiconductor capacitor using the gap filler agent 有权
标题翻译：间隙填充剂的制备方法，使用该间隙填充剂的间隙填充剂，以及使用间隙填充剂制造半导体电容器的方法
公开(公告)号：US09240443B2
公开(公告)日：2016-01-19
申请号：US14144738
申请日：2013-12-31
申请人： Jin-Hee Bae , Han-Song Lee , Taek-Soo Kwak , Go-Un Kim , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Sang-Hak Lim , Wan-Hee Lim , Seung-Hee Hong , Byeong-Gyu Hwang
发明人： Jin-Hee Bae , Han-Song Lee , Taek-Soo Kwak , Go-Un Kim , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Sang-Hak Lim , Wan-Hee Lim , Seung-Hee Hong , Byeong-Gyu Hwang
IPC分类号： C08G77/00 , H01L49/02 , H01L21/02
CPC分类号： H01L28/92 , C08G77/00 , C08G77/62 , C09D183/16 , H01L21/02222 , H01L21/02282 , H01L21/02326
摘要： A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.
摘要翻译：制备间隙填充剂的方法包括向碱性溶剂中加入卤代硅烷，并且向碱性溶剂和卤代硅烷中添加约50至约70重量份的氨，基于100重量份的卤代硅烷以约1g / hr至约15g / hr的速率。

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