专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09240443B2 Process of preparing a gap filler agent, a gap filler agent prepared using same, and a method for manufacturing semiconductor capacitor using the gap filler agent 有权
标题翻译：间隙填充剂的制备方法，使用该间隙填充剂的间隙填充剂，以及使用间隙填充剂制造半导体电容器的方法
公开(公告)号：US09240443B2
公开(公告)日：2016-01-19
申请号：US14144738
申请日：2013-12-31
申请人： Jin-Hee Bae , Han-Song Lee , Taek-Soo Kwak , Go-Un Kim , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Sang-Hak Lim , Wan-Hee Lim , Seung-Hee Hong , Byeong-Gyu Hwang
发明人： Jin-Hee Bae , Han-Song Lee , Taek-Soo Kwak , Go-Un Kim , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Sang-Hak Lim , Wan-Hee Lim , Seung-Hee Hong , Byeong-Gyu Hwang
IPC分类号： C08G77/00 , H01L49/02 , H01L21/02
CPC分类号： H01L28/92 , C08G77/00 , C08G77/62 , C09D183/16 , H01L21/02222 , H01L21/02282 , H01L21/02326
摘要： A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.
摘要翻译：制备间隙填充剂的方法包括向碱性溶剂中加入卤代硅烷，并且向碱性溶剂和卤代硅烷中添加约50至约70重量份的氨，基于100重量份的卤代硅烷以约1g / hr至约15g / hr的速率。

2. 发明申请

US20150044358A1 COMPOSITION FOR FORMING SILICA BASED INSULATING LAYER, SILICA BASED INSULATING LAYER AND METHOD FOR MANUFACTURING SILICA BASED INSULATING LAYER 有权
标题翻译：用于形成二氧化硅基绝缘层的组合物，基于二氧化硅的绝缘层和用于制造基于二氧化硅的绝缘层的方法
公开(公告)号：US20150044358A1
公开(公告)日：2015-02-12
申请号：US14268193
申请日：2014-05-02
申请人： Eun-Su PARK , Taek-Soo KWAK , Yoong-Hee NA , Hyun-Ji SONG , Han-Song LEE , Seung-Hee HONG
发明人： Eun-Su PARK , Taek-Soo KWAK , Yoong-Hee NA , Hyun-Ji SONG , Han-Song LEE , Seung-Hee HONG
IPC分类号： C09D183/04 , H01B19/04 , H01B19/02 , H01B3/18
CPC分类号： H01B19/02 , C08G77/54 , C09D183/14 , H01B3/18 , H01B3/46 , H01B19/04
摘要： A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product, the organosilane-based condensation polymerization product being prepared from a compound mixture, the compound mixture including compounds represented by the following Chemical Formulae 1 and 2: (R1)3SiXSi(R1)3 [Chemical Formula 1] R2e(Si)OR34-e. [Chemical Formula 2]
摘要翻译：用于形成二氧化硅基绝缘层的组合物，二氧化硅系绝缘层，以及二氧化硅系绝缘层的制造方法，所述组合物含有溶剂; 和由有机硅烷类缩聚产物，由化合物混合物制备的有机硅烷缩合产物，该化合物混合物包括由以下化学式1和2表示的化合物：（R1）3SiXSi（R1）3 [化学式1 ] R2e（Si）OR34-e。 [化学式2]

3. 发明授权

US08357482B2 Organic anti-reflective layer composition containing ring-opened phthalic anhydride and method for preparation thereof 有权
标题翻译：含有开环邻苯二甲酸酐的有机抗反射层组合物及其制备方法
公开(公告)号：US08357482B2
公开(公告)日：2013-01-22
申请号：US13186101
申请日：2011-07-19
申请人： Jong-Don Lee , Jun-Ho Lee , Shin-Hyo Bae , Seung-Hee Hong , Seung-Duk Cho
发明人： Jong-Don Lee , Jun-Ho Lee , Shin-Hyo Bae , Seung-Hee Hong , Seung-Duk Cho
IPC分类号： G02B5/22 , C08K5/03 , C08L33/00 , C08L63/00
CPC分类号： C07C69/76 , C07C69/753 , C07C69/92 , C07C317/44 , C07C323/62 , C07C2602/44 , G03F7/091 , Y10T428/24612
摘要： A light absorbent for forming an organic anti-reflective layer, represented by the following formula 1 or formula 2, is provided: wherein A represents a substituted or unsubstituted, linear or branched, saturated tetravalent hydrocarbon group, a substituted or unsubstituted, linear or branched, saturated hydrocarbon group and containing one or more heteroatoms, a substituted or unsubstituted aromatic group, a substituted or unsubstituted heteroaromatic group, a substituted or unsubstituted alicyclic group, a substituted or unsubstituted heteroalicyclic group, a substituted or unsubstituted diaryl ether, a substituted or unsubstituted diaryl sulfide, a substituted or unsubstituted diaryl sulfoxide, a substituted or unsubstituted diaryl ketone, or a substituted or unsubstituted diaryl bisphenol A; R1, R2, and R3 each independently represent a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted acetal group, or a substituted or unsubstituted hydroxyl group; and n is an integer from 2 to 500.
摘要翻译：提供用于形成由下式1或式2表示的有机抗反射层的光吸收剂：其中A表示取代或未取代的直链或支链饱和四价烃基，取代或未取代的直链或支链饱和烃基，含有一个或多个杂原子，取代或未取代的芳族基团，取代或未取代的杂芳族基团，取代或未取代的脂环族基团，取代或未取代的杂脂族基团，取代或未取代的二芳基醚，取代或未取代的二芳基硫醚，取代或未取代的二芳基亚砜，取代或未取代的二芳基酮，或取代或未取代的二芳基双酚A; R 1，R 2和R 3各自独立地表示氢原子，卤素原子，取代或未取代的烷基，取代或未取代的芳基，取代或未取代的缩醛基或取代或未取代的羟基; n为2〜500的整数。

4. 发明授权

US08216932B2 Method of manufacturing semiconductor devices having metal lines 有权
标题翻译：制造具有金属线的半导体器件的方法
公开(公告)号：US08216932B2
公开(公告)日：2012-07-10
申请号：US12345611
申请日：2008-12-29
申请人： Cheol Mo Jeong , Eun Soo Kim , Seung Hee Hong
发明人： Cheol Mo Jeong , Eun Soo Kim , Seung Hee Hong
IPC分类号： H01L21/4763
CPC分类号： H01L21/76834 , H01L21/76849 , H01L21/76883 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to semiconductor devices and a method of fabricating the same. According to a method of manufacturing semiconductor devices, there is first provided a semiconductor substrate in which a first pre-metal dielectric layer including trenches is formed. A diffusion barrier layer is formed on the entire surface including the trenches. A metal layer is formed on the diffusion barrier layer including the trenches, thereby gap-filling the trenches. A polish etching process is performed on the metal layer and the diffusion barrier layer so that the diffusion barrier layer and the metal layer remain within the trenches. An etching process of lowering a height of the metal layer is performed in order to increase a distance between metal lines. A capping layer is formed on the entire surface including exposed sidewalls of the first pre-metal dielectric layer. A second pre-metal dielectric layer is formed over the capping layer.
摘要翻译：本发明涉及半导体器件及其制造方法。根据制造半导体器件的方法，首先提供其中形成包括沟槽的第一预金属电介质层的半导体衬底。在包括沟槽的整个表面上形成扩散阻挡层。在包括沟槽的扩散阻挡层上形成金属层，从而间隙填充沟槽。在金属层和扩散阻挡层上进行抛光蚀刻工艺，使得扩散阻挡层和金属层保留在沟槽内。执行降低金属层的高度的蚀刻工艺，以增加金属线之间的距离。在包括第一预金属介电层的暴露的侧壁的整个表面上形成覆盖层。在覆盖层上方形成第二预金属介电层。

5. 发明申请

US20110272643A1 ORGANIC ANTI-REFLECTIVE LAYER COMPOSITION CONTAINING RING-OPENED PHTHALIC ANHYDRIDE AND METHOD FOR PREPARATION THEREOF 有权
标题翻译：含有开环酚醛树脂的有机抗反射层组合物及其制备方法
公开(公告)号：US20110272643A1
公开(公告)日：2011-11-10
申请号：US13186101
申请日：2011-07-19
申请人： Jong-Don Lee , Jun-Ho Lee , Shin-Hyo Bae , Seung-Hee Hong , Seung-Duk Cho
发明人： Jong-Don Lee , Jun-Ho Lee , Shin-Hyo Bae , Seung-Hee Hong , Seung-Duk Cho
IPC分类号： G02B5/22 , C08K5/103 , C08L63/00 , C08L33/00
CPC分类号： C07C69/76 , C07C69/753 , C07C69/92 , C07C317/44 , C07C323/62 , C07C2602/44 , G03F7/091 , Y10T428/24612
摘要： A light absorbent for forming an organic anti-reflective layer, represented by the following formula 1 or formula 2, is provided: wherein A represents a substituted or unsubstituted, linear or branched, saturated tetravalent hydrocarbon group, a substituted or unsubstituted, linear or branched, saturated hydrocarbon group and containing one or more heteroatoms, a substituted or unsubstituted aromatic group, a substituted or unsubstituted heteroaromatic group, a substituted or unsubstituted alicyclic group, a substituted or unsubstituted heteroalicyclic group, a substituted or unsubstituted diaryl ether, a substituted or unsubstituted diaryl sulfide, a substituted or unsubstituted diaryl sulfoxide, a substituted or unsubstituted diaryl ketone, or a substituted or unsubstituted diaryl bisphenol A; R1, R2, and R3 each independently represent a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted acetal group, or a substituted or unsubstituted hydroxyl group; and n is an integer from 2 to 500.
摘要翻译：提供用于形成由下式1或式2表示的有机抗反射层的光吸收剂：其中A表示取代或未取代的直链或支链饱和四价烃基，取代或未取代的直链或支链饱和烃基，含有一个或多个杂原子，取代或未取代的芳族基团，取代或未取代的杂芳族基团，取代或未取代的脂环族基团，取代或未取代的杂脂族基团，取代或未取代的二芳基醚，取代或未取代的二芳基硫醚，取代或未取代的二芳基亚砜，取代或未取代的二芳基酮，或取代或未取代的二芳基双酚A; R 1，R 2和R 3各自独立地表示氢原子，卤素原子，取代或未取代的烷基，取代或未取代的芳基，取代或未取代的缩醛基或取代或未取代的羟基; n为2〜500的整数。

6. 发明授权

US07601632B2 Method of forming a metal line of a semiconductor device 失效
标题翻译：形成半导体器件的金属线的方法
公开(公告)号：US07601632B2
公开(公告)日：2009-10-13
申请号：US11646925
申请日：2006-12-27
申请人： Eun Soo Kim , Cheol Mo Jeong , Seung Hee Hong
发明人： Eun Soo Kim , Cheol Mo Jeong , Seung Hee Hong
IPC分类号： H01L21/00
CPC分类号： H01L21/76882 , H01L21/76838 , H01L21/76865 , H01L21/76879
摘要： A first conductive layer is formed over a substrate in which contact holes are formed in an interlayer insulating layer. The first conductive layer is melted by an annealing process, thus coating the lower sidewalls of the contact holes and partially filling the contact holes. A second conductive layer is deposited with a method having selectivity with respect to the same material as the first conductive layer, thus fully filling the contact holes. A metal line is formed on the second conductive layer. The contact holes are completely filled with a conductive material and the load of a CMP process can be alleviated. Accordingly, the electrical characteristics of a device can be improved, process reliability can be improved, and process repeatablity can be improved.
摘要翻译：在层间绝缘层中形成有接触孔的基板上形成第一导电层。第一导电层通过退火工艺熔化，从而涂覆接触孔的下侧壁并部分填充接触孔。以与第一导电层相同的材料具有选择性的方法沉积第二导电层，从而完全填充接触孔。金属线形成在第二导电层上。接触孔完全充满导电材料，可以减轻CMP工艺的负荷。因此，可以提高器件的电气特性，提高工艺可靠性，提高加工的可重复性。

7. 发明授权

US07557033B2 Method of forming metal line of semiconductor memory device 失效
标题翻译：形成半导体存储器件金属线的方法
公开(公告)号：US07557033B2
公开(公告)日：2009-07-07
申请号：US11647087
申请日：2006-12-27
申请人： Eun Soo Kim , Seung Hee Hong , Cheol Mo Jeong , Jung Geun Kim
发明人： Eun Soo Kim , Seung Hee Hong , Cheol Mo Jeong , Jung Geun Kim
IPC分类号： H01L21/4763
CPC分类号： H01L21/76834 , H01L21/32139 , H01L21/76837
摘要： A method of forming a metal line of a semiconductor memory device includes the steps of forming plugs of a damascene structure in a first interlayer insulating layer over a semiconductor substrate, forming a barrier metal layer, a metal layer and an anti-reflection layer on the resulting surface, etching the anti-reflection layer, the metal layer, and the barrier metal layer according a specific pattern, and forming an insulating layer on sidewalls of the metal layer.
摘要翻译：形成半导体存储器件的金属线的方法包括以下步骤：在半导体衬底上的第一层间绝缘层中形成镶嵌结构的插塞，在其上形成阻挡金属层，金属层和抗反射层根据特定图案蚀刻抗反射层，金属层和阻挡金属层，并在金属层的侧壁上形成绝缘层。

8. 发明申请

US20090053889A1 METHOD FOR FORMING A METAL LINE IN A SEMICONDUCTOR DEVICE 失效
标题翻译：在半导体器件中形成金属线的方法
公开(公告)号：US20090053889A1
公开(公告)日：2009-02-26
申请号：US12053488
申请日：2008-03-21
申请人： Seung Hee Hong , Jung Geun Kim , Eun Soo Kim
发明人： Seung Hee Hong , Jung Geun Kim , Eun Soo Kim
IPC分类号： H01L21/4763
CPC分类号： H01L21/76877 , H01L21/76844 , H01L21/76846 , H01L21/76847 , H01L23/485 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes contact plugs formed in contact holes defined in an interlayer dielectric. Upper portions of the contact plugs are etched. A first barrier layer is formed on a surface of the interlayer dielectric including the contact plugs. A second barrier layer is formed on the first barrier layer over the interlayer dielectric. The second barrier layer has lower compatibility with a metallic material than the first barrier layer. A first metal layer is formed over the first and second barrier layers. The first metal layer, the first barrier layer and the second barrier layer are then patterned.
摘要翻译：半导体器件包括形成在层间电介质中限定的接触孔中的接触塞。接触塞的上部被蚀刻。在包括接触塞的层间电介质的表面上形成第一阻挡层。在层间电介质上的第一阻挡层上形成第二阻挡层。与第一阻挡层相比，第二阻挡层与金属材料的相容性较低。在第一和第二阻挡层上形成第一金属层。然后对第一金属层，第一阻挡层和第二阻挡层进行图案化。

9. 发明申请

US20090001583A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090001583A1
公开(公告)日：2009-01-01
申请号：US12019945
申请日：2008-01-25
申请人： Cheol Mo Jeong , Whee Won Cho , Seung Hee Hong
发明人： Cheol Mo Jeong , Whee Won Cho , Seung Hee Hong
IPC分类号： H01L21/768 , H01L23/52
CPC分类号： H01L23/53266 , H01L21/76846 , H01L21/76856 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a semiconductor device and a method of fabricating the same. In an embodiment of the present invention, an insulating layer in which contact holes are formed is formed over a semiconductor substrate in which lower metal lines are formed. A barrier metal layer, having a stack structure of a first tungsten (W) layer and a tungsten nitride (WN) layer, is formed within the contact holes. Contact plugs are formed within the contact holes.
摘要翻译：半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。在本发明的一个实施例中，形成有接触孔的绝缘层形成在形成下部金属线的半导体衬底上。在接触孔内形成具有第一钨（W）层和氮化钨（WN）层的堆叠结构的阻挡金属层。接触塞形成在接触孔内。

10. 发明申请

US20080146023A1 METHOD OF FORMING METAL WIRE IN SEMICONDUCTOR DEVICE 失效
标题翻译：在半导体器件中形成金属线的方法
公开(公告)号：US20080146023A1
公开(公告)日：2008-06-19
申请号：US11753543
申请日：2007-05-24
申请人： Seung Hee HONG , Cheol Mo Jeong , Jung Geun Kim , Eun Soo Kim
发明人： Seung Hee HONG , Cheol Mo Jeong , Jung Geun Kim , Eun Soo Kim
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , H01L21/32131 , H01L21/76879 , H01L21/76882
摘要： A method of forming a metal wire in a semiconductor device includes performing a first etching process on an insulating layer formed on a semiconductor substrate to form a trench and an insulating layer pattern, the insulating layer pattern defining the trench. A barrier metal layer is formed over the insulating layer pattern and the trench. A second etching process is performed on the barrier metal layer to expose upper corners of the trench while leaving the trench substantially covered with the barrier metal layer. A metal layer is formed over the barrier metal layer in the trench. A heat treatment process is performed for reflowing the metal layer. The metal layer is planarized.
摘要翻译：在半导体器件中形成金属线的方法包括对形成在半导体衬底上的绝缘层进行第一蚀刻工艺以形成沟槽和绝缘层图案，绝缘层图案限定沟槽。在绝缘层图案和沟槽之上形成阻挡金属层。在阻挡金属层上进行第二蚀刻工艺以暴露沟槽的上角，同时留下基本上被阻挡金属层覆盖的沟槽。在沟槽中的阻挡金属层的上方形成有金属层。进行用于回流金属层的热处理工艺。金属层被平坦化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式