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1. 发明授权

US07389491B2 Methods, systems and computer program products for correcting photomask using aerial images and boundary regions 失效
标题翻译：用于使用航空图像和边界区域校正光掩模的方法，系统和计算机程序产品
公开(公告)号：US07389491B2
公开(公告)日：2008-06-17
申请号：US11268791
申请日：2005-11-08
申请人： Ji-Soong Park , Sung-Min Huh , Seong-Woon Choi , In-Kyun Shin
发明人： Ji-Soong Park , Sung-Min Huh , Seong-Woon Choi , In-Kyun Shin
IPC分类号： G06F17/50 , G06K9/00
CPC分类号： G03F1/84
摘要： A correction method and a system thereof automatically perform a measurement and an analysis for a photomask critical dimension (CD), to satisfy a desired CD uniformity and a desired mean-to-target (MTT) data. A correction for a portion where a CD error has occurred may be performed.
摘要翻译：校正方法及其系统自动执行光掩模关键尺寸（CD）的测量和分析，以满足期望的CD均匀性和期望的平均对目标（MTT）数据。可以执行对发生CD错误的部分的校正。

2. 发明申请

US20060204862A1 Methods, systems and computer program products for correcting photomask using aerial images and boundary regions 失效
标题翻译：用于使用航空图像和边界区域校正光掩模的方法，系统和计算机程序产品
公开(公告)号：US20060204862A1
公开(公告)日：2006-09-14
申请号：US11268791
申请日：2005-11-08
申请人： Ji-Soong Park , Sung-Min Huh , Seong-Woon Choi , In-Kyun Shin
发明人： Ji-Soong Park , Sung-Min Huh , Seong-Woon Choi , In-Kyun Shin
IPC分类号： H01L29/40 , H01L23/544 , H01L23/48 , G03C5/00 , H01L23/52 , G03F1/00
CPC分类号： G03F1/84
摘要： A correction method and a system thereof automatically perform a measurement and an analysis for a photomask critical dimension (CD), to satisfy a desired CD uniformity and a desired mean-to-target (MTT) data. A correction for a portion where a CD error has occurred may be performed.
摘要翻译：校正方法及其系统自动执行光掩模关键尺寸（CD）的测量和分析，以满足期望的CD均匀性和期望的平均对目标（MTT）数据。可以执行对发生CD错误的部分的校正。

3. 发明授权

US06866968B2 Photomask for off-axis illumination and method of fabricating the same 有权
标题翻译：用于离轴照明的光掩模及其制造方法
公开(公告)号：US06866968B2
公开(公告)日：2005-03-15
申请号：US10216925
申请日：2002-08-13
申请人： In-Kyun Shin , Jung-min Sohn , Hee-sun Yoon , Seong-woon Choi
发明人： In-Kyun Shin , Jung-min Sohn , Hee-sun Yoon , Seong-woon Choi
IPC分类号： G03F1/26 , G03F1/68 , G03F1/76 , G03F1/78 , G03F1/80 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F7/70125 , G03F1/34 , G03F1/50
摘要： A photomask that is capable of implementing off-axis illumination (OAI), and a method of fabricating the same, are provided. The photomask includes a transparent substrate, a plurality of opaque patterns formed on the front surface of the transparent substrate, for defining a floodlighting portion for forming patterns, and a plurality of phase gratings formed on the back surface of the transparent substrate, allowing off-axis illumination (OAI) of an incident light source beyond the OAI limit of exposure equipment, allowing use in the outmost region of an aperture, and allowing modified illumination having a shape suitable for the layout of the opaque patterns.
摘要翻译：提供能够实现离轴照明（OAI）的光掩模及其制造方法。光掩模包括透明基板，形成在透明基板的前表面上的多个不透明图案，用于限定用于形成图案的泛光部分，以及形成在透明基板的背面上的多个相位光栅，入射光源的轴向照明（OAI）超过曝光设备的OAI限制，允许在孔的最外部区域使用，并允许具有适于布局不透明图案的形状的改进的照明。

4. 发明授权

US07595136B2 Method of fabricating chrome-less phase shift mask 失效
标题翻译：无铬相移掩模的制造方法
公开(公告)号：US07595136B2
公开(公告)日：2009-09-29
申请号：US11325149
申请日：2006-01-03
申请人： Gi-Sung Yoon , In-Kyun Shin , Sung-Hyuck Kim
发明人： Gi-Sung Yoon , In-Kyun Shin , Sung-Hyuck Kim
IPC分类号： G03F1/00
CPC分类号： G03F1/34
摘要： An embodiment of a method of fabricating a chrome-less phase shift mask includes forming a hard mask film on a surface of a mask body having a trench circuit area and a mesa circuit area. The hard mask film is patterned. The mask body is anisotropically etched using the hard mask pattern as an etching mask to form pre-pitting patterns in the trench circuit area. The hard mask film having the hard mask pattern is again patterned to form a mesa hard mask pattern on the mesa circuit area and to expose a top surface of the trench circuit area. The mask body is anisotropically etched to form phase shift hillock patterns in the mesa circuit area and phase shift pitting patterns in the trench circuit area. Phase shift pitting patterns and phase shift hillock patterns may be formed on a single body.
摘要翻译：制造无铬相移掩模的方法的实施例包括在具有沟槽电路区域和台面电路区域的掩模体的表面上形成硬掩模膜。硬掩模膜被图案化。使用硬掩模图案作为蚀刻掩模对掩模体进行各向异性蚀刻，以在沟槽电路区域中形成预点蚀图案。具有硬掩模图案的硬掩模膜再次被图案化以在台面电路区域上形成台面硬掩模图案并且暴露沟槽电路区域的顶表面。掩模体被各向异性地蚀刻以在台面电路区域中形成相移小丘图案，并在沟槽电路区域中形成相移点蚀图案。相移点蚀图案和相移小丘图案可以形成在单个主体上。

5. 发明申请

US20100209826A1 Apparatus for processing photomask, methods of using the same, and methods of processing photomask 审中-公开
标题翻译：用于处理光掩模的设备，使用其的方法以及处理光掩模的方法
公开(公告)号：US20100209826A1
公开(公告)日：2010-08-19
申请号：US12656747
申请日：2010-02-16
申请人： Sung-Hyuck Kim , In-Kyun Shin
发明人： Sung-Hyuck Kim , In-Kyun Shin
IPC分类号： G03F1/00
CPC分类号： G03F1/60 , G03F1/72
摘要： An apparatus and method for improving global flatness of a photomask is provided. The apparatus may include an adsorbing plate including vacuuming holes on one surface thereof, the adsorbing plate being adapted to adsorb the photomask thereon, a photomask supporting part including a plurality of supporting portions adapted to support the photomask and supporting arms on which the supporting portions are disposed, and a pressing plate including a pressing frame adapted to apply pressure to one surface of the photomask.
摘要翻译：提供了一种用于提高光掩模的全局平坦度的装置和方法。该装置可以包括一个吸附板，该吸附板在其一个表面上包括抽吸孔，吸附板适于吸附其上的光掩模，光掩模支撑部分包括适于支撑光掩模的多个支撑部分和支撑部分以及包括适于向光掩模的一个表面施加压力的按压框架的压板。

6. 发明授权

US07112390B2 Method of manufacturing chromeless phase shift mask 有权
标题翻译：无色相移掩模的制造方法
公开(公告)号：US07112390B2
公开(公告)日：2006-09-26
申请号：US10368630
申请日：2003-02-20
申请人： Myung-Ah Kang , In-Kyun Shin
发明人： Myung-Ah Kang , In-Kyun Shin
IPC分类号： G01F9/00
CPC分类号： G03F1/34
摘要： A method of manufacturing a chromeless phase shift mask includes forming a photoresist film pattern on a wafer using a basic form of the chromeless phase shift mask and measuring a specification of the photoresist film pattern. The basic form of the chromeless phase shift mask is isotropically etched to modify the phase shifter of the mask unless the photoresist film pattern specification is within a specified range. Accordingly, an application-specific chromeless phase shift mask can be produced for use in any exposure apparatus and under any exposure condition.
摘要翻译：无铬相变掩模的制造方法包括：使用无铬相移掩模的基本形式在晶片上形成光致抗蚀剂膜图案，并测量光致抗蚀剂膜图案的规格。无铬相变掩模的基本形式被各向同性地蚀刻以修改掩模的移相器，除非光致抗蚀剂膜图案规格在指定范围内。因此，可以制造用于任何曝光装置和任何曝光条件下的专用无铬相移掩模。

7. 发明申请

US20060147819A1 Method of fabricating chrome-less phase shift mask 失效
公开(公告)号：US20060147819A1
公开(公告)日：2006-07-06
申请号：US11325149
申请日：2006-01-03
申请人： Gi-Sung Yoon , In-Kyun Shin , Sung-Hyuck Kim
发明人： Gi-Sung Yoon , In-Kyun Shin , Sung-Hyuck Kim
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/34
摘要： An embodiment of a method of fabricating a chrome-less phase shift mask includes forming a hard mask film on a surface of a mask body having a trench circuit area and a mesa circuit area. The hard mask film is patterned. The mask body is anisotropically etched using the hard mask pattern as an etching mask to form pre-pitting patterns in the trench circuit area. The hard mask film having the hard mask pattern is again patterned to form a mesa hard mask pattern on the mesa circuit area and to expose a top surface of the trench circuit area. The mask body is anisotropically etched to form phase shift hillock patterns in the mesa circuit area and phase shift pitting patterns in the trench circuit area. Phase shift pitting patterns and phase shift hillock patterns may be formed on a single body.

8. 发明授权

US07541118B2 Phase shift mask 失效
标题翻译：相移掩模
公开(公告)号：US07541118B2
公开(公告)日：2009-06-02
申请号：US11969979
申请日：2008-01-07
申请人： Myung-Ah Kang , In-Kyun Shin
发明人： Myung-Ah Kang , In-Kyun Shin
IPC分类号： G03F1/00 , G03F1/14
CPC分类号： G03F1/34 , G03F1/30
摘要： A phase shift mask includes a first non-phase shift region, a first phase shift region adjacent the first non-phase shift region, a second non-phase shift region, a second phase shift region adjacent the second non-phase shift region, and an opaque region interposed between said second phase shift and non-phase shift regions. The first and second non-phase shift regions transmit an exposure light at its original phase, whereas the first and second phase shift regions invert the phase of the exposure light. The phase shift mask is manufactured by first forming a layer of opaque material on a transparent mask substrate. The first phase shift region and the second phase and non-phase shift regions are formed by selectively etching the opaque material and underlying portions of the mask substrate to form recesses in the substrate. On the other hand, only the opaque layer is etched from the mask substrate to form the first non-phase shift region, and is left on the substrate between the second phase shift and non-phase shift regions.
摘要翻译：相移掩模包括第一非相移区域，与第一非相移区域相邻的第一相移区域，第二非相移区域，与第二非相移区域相邻的第二相移区域，以及位于所述第二相移和非相移区域之间的不透明区域。第一和第二非相移区域以其初始相位发射曝光光，而第一和第二相移区域反转曝光光的相位。通过在透明掩模基板上首先形成不透明材料层来制造相移掩模。通过选择性地蚀刻不透明材料和掩模基板的下面部分形成第一相移区域和第二相位和非相移区域，以在衬底中形成凹陷。另一方面，从掩模基板仅蚀刻不透明层以形成第一非相移区域，并且留在第二相移与非相移区域之间的衬底上。

9. 发明授权

US07387965B2 Reference pattern for creating a defect recognition level, method of fabricating the same and method of inspecting defects using the same 失效
标题翻译：用于创建缺陷识别级别的参考图案，其制造方法以及使用其的检查缺陷的方法
公开(公告)号：US07387965B2
公开(公告)日：2008-06-17
申请号：US10848250
申请日：2004-05-18
申请人： Won-Il Cho , In-Kyun Shin , Jin-Hyung Park
发明人： Won-Il Cho , In-Kyun Shin , Jin-Hyung Park
IPC分类号： H01L21/311
CPC分类号： G03F1/84 , G01N21/93 , G01N21/9501
摘要： A reference pattern for creating a defect recognition level comprises a blank region formed on a transparent substrate and a grating region formed adjacent to the blank region, wherein the grating region includes a plurality of parallel trench lines.
摘要翻译：用于产生缺陷识别级别的参考图形包括形成在透明基板上的空白区域和与空白区域相邻形成的光栅区域，其中光栅区域包括多个平行的沟槽线。

10. 发明授权

US07335449B2 Masks each having a central main pattern region and a peripheral phantom pattern region with light-transmitting features in both pattern regions having the shame shape and pitch and methods of manufacturing the same 失效
标题翻译：在具有耻骨形状和间距的两个图案区域中具有中心主图案区域和周边假想图案区域的透光特征的面罩及其制造方法
公开(公告)号：US07335449B2
公开(公告)日：2008-02-26
申请号：US10870442
申请日：2004-06-18
申请人： Sung-Hyuck Kim , In-Kyun Shin , Dong-Hoon Chung
发明人： Sung-Hyuck Kim , In-Kyun Shin , Dong-Hoon Chung
IPC分类号： G03F1/00 , G03F1/08
CPC分类号： G03F1/36
摘要： A mask and a method of forming the mask obviate optical proximity effects. The mask includes a light-shielding layer on a transparent substrate. The light-shielding layer is patterned to form a main pattern and a phantom pattern. The main and phantom patterns each have a light shielding portion and a light-transmitting portion. The pitch of the features constituting the phantom pattern is identical to the pitch of the features constituting the main pattern. The shape of the light-transmitting features of the phantom pattern region is identical to the shape of the light-transmitting features of the main pattern region.
摘要翻译：掩模和形成掩模的方法消除了光学邻近效应。掩模在透明基板上包括遮光层。图案化遮光层以形成主图案和幻影图案。主要和幻影图案都具有遮光部分和透光部分。构成幻影图案的特征的间距与构成主图案的特征的间距相同。幻影图案区域的透光特征的形状与主图案区域的透光特征的形状相同。

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