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1. 发明申请

US20100209826A1 Apparatus for processing photomask, methods of using the same, and methods of processing photomask 审中-公开
标题翻译：用于处理光掩模的设备，使用其的方法以及处理光掩模的方法
公开(公告)号：US20100209826A1
公开(公告)日：2010-08-19
申请号：US12656747
申请日：2010-02-16
申请人： Sung-Hyuck Kim , In-Kyun Shin
发明人： Sung-Hyuck Kim , In-Kyun Shin
IPC分类号： G03F1/00
CPC分类号： G03F1/60 , G03F1/72
摘要： An apparatus and method for improving global flatness of a photomask is provided. The apparatus may include an adsorbing plate including vacuuming holes on one surface thereof, the adsorbing plate being adapted to adsorb the photomask thereon, a photomask supporting part including a plurality of supporting portions adapted to support the photomask and supporting arms on which the supporting portions are disposed, and a pressing plate including a pressing frame adapted to apply pressure to one surface of the photomask.
摘要翻译：提供了一种用于提高光掩模的全局平坦度的装置和方法。该装置可以包括一个吸附板，该吸附板在其一个表面上包括抽吸孔，吸附板适于吸附其上的光掩模，光掩模支撑部分包括适于支撑光掩模的多个支撑部分和支撑部分以及包括适于向光掩模的一个表面施加压力的按压框架的压板。

2. 发明授权

US07112390B2 Method of manufacturing chromeless phase shift mask 有权
标题翻译：无色相移掩模的制造方法
公开(公告)号：US07112390B2
公开(公告)日：2006-09-26
申请号：US10368630
申请日：2003-02-20
申请人： Myung-Ah Kang , In-Kyun Shin
发明人： Myung-Ah Kang , In-Kyun Shin
IPC分类号： G01F9/00
CPC分类号： G03F1/34
摘要： A method of manufacturing a chromeless phase shift mask includes forming a photoresist film pattern on a wafer using a basic form of the chromeless phase shift mask and measuring a specification of the photoresist film pattern. The basic form of the chromeless phase shift mask is isotropically etched to modify the phase shifter of the mask unless the photoresist film pattern specification is within a specified range. Accordingly, an application-specific chromeless phase shift mask can be produced for use in any exposure apparatus and under any exposure condition.
摘要翻译：无铬相变掩模的制造方法包括：使用无铬相移掩模的基本形式在晶片上形成光致抗蚀剂膜图案，并测量光致抗蚀剂膜图案的规格。无铬相变掩模的基本形式被各向同性地蚀刻以修改掩模的移相器，除非光致抗蚀剂膜图案规格在指定范围内。因此，可以制造用于任何曝光装置和任何曝光条件下的专用无铬相移掩模。

3. 发明申请

US20060147819A1 Method of fabricating chrome-less phase shift mask 失效
公开(公告)号：US20060147819A1
公开(公告)日：2006-07-06
申请号：US11325149
申请日：2006-01-03
申请人： Gi-Sung Yoon , In-Kyun Shin , Sung-Hyuck Kim
发明人： Gi-Sung Yoon , In-Kyun Shin , Sung-Hyuck Kim
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/34
摘要： An embodiment of a method of fabricating a chrome-less phase shift mask includes forming a hard mask film on a surface of a mask body having a trench circuit area and a mesa circuit area. The hard mask film is patterned. The mask body is anisotropically etched using the hard mask pattern as an etching mask to form pre-pitting patterns in the trench circuit area. The hard mask film having the hard mask pattern is again patterned to form a mesa hard mask pattern on the mesa circuit area and to expose a top surface of the trench circuit area. The mask body is anisotropically etched to form phase shift hillock patterns in the mesa circuit area and phase shift pitting patterns in the trench circuit area. Phase shift pitting patterns and phase shift hillock patterns may be formed on a single body.

4. 发明授权

US5814424A Half tone phase shift masks with staircase regions and methods of fabricating the same 失效
标题翻译：具有阶梯区域的半色调相移掩模及其制造方法
公开(公告)号：US5814424A
公开(公告)日：1998-09-29
申请号：US869559
申请日：1997-06-05
申请人： In-kyun Shin
发明人： In-kyun Shin
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/29 , G03F1/32
摘要： A phase shift mask includes a phase shift region and an unshifted phase region in spaced apart relation on a phase shift mask substrate, and a half tone region on the unshifted phase region. The half tone region changes the phase of radiation incident thereon. The half tone region preferably defines a staircase region which causes destructive interference of incident radiation which can thereby reduce the critical distance difference between patterns formed with the phase shift region and the unshifted phase region. The phase shift mask may be fabricated by forming a phase shift layer on a phase shift mask substrate and forming a patterned chrome layer on the phase shift layer which exposes a first portion and a second portion of the phase shift layer. A phase shift region is formed in the first portion of the phase shift layer and a half tone region and an unshifted phase region are formed in the second portion of the phase shift layer.
摘要翻译：相移掩模包括在相移掩模衬底上的间隔关系中的相移区域和非移相相位区域，以及未移相区域上的半色调区域。半色调区域改变入射在其上的辐射的相位。半色调区域优选地限定了引起入射辐射的破坏性干扰的阶梯区域，从而可以减小由相移区域和未移相区域形成的图案之间的临界距离差。可以通过在相移掩模衬底上形成相移层并在相移层上形成图案化的铬层来制造相移掩模，所述相移层暴露相移层的第一部分和第二部分。在相移层的第一部分中形成相移区域，并且在相移层的第二部分中形成半色调区域和未移相区域。

5. 发明授权

US07595136B2 Method of fabricating chrome-less phase shift mask 失效
标题翻译：无铬相移掩模的制造方法
公开(公告)号：US07595136B2
公开(公告)日：2009-09-29
申请号：US11325149
申请日：2006-01-03
申请人： Gi-Sung Yoon , In-Kyun Shin , Sung-Hyuck Kim
发明人： Gi-Sung Yoon , In-Kyun Shin , Sung-Hyuck Kim
IPC分类号： G03F1/00
CPC分类号： G03F1/34
摘要： An embodiment of a method of fabricating a chrome-less phase shift mask includes forming a hard mask film on a surface of a mask body having a trench circuit area and a mesa circuit area. The hard mask film is patterned. The mask body is anisotropically etched using the hard mask pattern as an etching mask to form pre-pitting patterns in the trench circuit area. The hard mask film having the hard mask pattern is again patterned to form a mesa hard mask pattern on the mesa circuit area and to expose a top surface of the trench circuit area. The mask body is anisotropically etched to form phase shift hillock patterns in the mesa circuit area and phase shift pitting patterns in the trench circuit area. Phase shift pitting patterns and phase shift hillock patterns may be formed on a single body.
摘要翻译：制造无铬相移掩模的方法的实施例包括在具有沟槽电路区域和台面电路区域的掩模体的表面上形成硬掩模膜。硬掩模膜被图案化。使用硬掩模图案作为蚀刻掩模对掩模体进行各向异性蚀刻，以在沟槽电路区域中形成预点蚀图案。具有硬掩模图案的硬掩模膜再次被图案化以在台面电路区域上形成台面硬掩模图案并且暴露沟槽电路区域的顶表面。掩模体被各向异性地蚀刻以在台面电路区域中形成相移小丘图案，并在沟槽电路区域中形成相移点蚀图案。相移点蚀图案和相移小丘图案可以形成在单个主体上。

6. 发明申请

US20050123839A1 Photo mask capable of improving resolution by utilizing polarization of light and method of manufacturing the same 有权
标题翻译：能够通过利用光的偏振改善分辨率的光掩模及其制造方法
公开(公告)号：US20050123839A1
公开(公告)日：2005-06-09
申请号：US10942047
申请日：2004-09-16
申请人： Sung-hyuck Kim , In-kyun Shin , Gi-sung Yoon
发明人： Sung-hyuck Kim , In-kyun Shin , Gi-sung Yoon
IPC分类号： H01L21/027 , G03F1/14 , G03F9/00 , G21K5/00
CPC分类号： G03F1/38 , G03F1/50
摘要： A photo mask enhances the resolution of a photolithography process by polarizing the exposure light. The photo mask includes a transparent substrate made of quartz, a reflection pattern disposed on the transparent substrate, and a light-blocking pattern disposed on the reflection pattern. The external reflection pattern defines a light-transmitting area by exposing portions of the transparent substrate. The light-blocking pattern has the same size and shape as the external reflection pattern.
摘要翻译：光掩模通过偏振曝光光增强了光刻工艺的分辨率。光掩模包括由石英制成的透明基板，设置在透明基板上的反射图案和设置在反射图案上的遮光图案。外部反射图案通过暴露透明基板的部分来限定透光区域。遮光图案具有与外部反射图案相同的尺寸和形状。

7. 发明申请

US20130250286A1 APPARATUS FOR MEASURING PATTERNS ON A REFLECTIVE PHOTOMASK 审中-公开
标题翻译：用于测量反光镜的图案的装置
公开(公告)号：US20130250286A1
公开(公告)日：2013-09-26
申请号：US13619072
申请日：2012-09-14
申请人： Hak-Seung HAN , In-Kyun SHIN , Young-Keun YOON
发明人： Hak-Seung HAN , In-Kyun SHIN , Young-Keun YOON
IPC分类号： G01N21/01
CPC分类号： G01N21/956 , G01N21/21 , G01N2021/95676
摘要： An apparatus for inspecting, measuring, or inspecting and measuring a reflective photomask may comprise a light illuminating part including a light source and beam shaping part; a stage configured to cause the light generated to be incident at an angle through the beam shaping part; and/or a light detector configured to receive optical image information of the photomask mounted on the stage. An apparatus for inspecting, measuring, or inspecting and measuring a reflective photomask may comprise a light illuminating part including a light source and configured to adjust a progress direction of light from the light source at an angle; a stage in a direction at which the light is irradiated from the light illuminating part at the angle and configured to mount the photomask; a slit plate between the light illuminating part and the stage; and/or a light detector configured to receive image information of the photomask.
摘要翻译：用于检查，测量或检查和测量反射光掩模的装置可以包括包括光源和光束成形部分的光照射部分; 被配置为使所产生的光以一定角度通过所述光束成形部而入射的台阶; 和/或光检测器，被配置为接收安装在台上的光掩模的光学图像信息。用于检查，测量或检查和测量反射光掩模的装置可以包括光照射部分，其包括光源并且被配置为以一定角度调整来自光源的光的进行方向; 从光照射部照射光的方向的台阶，并配置为安装光掩模; 光照射部和台之间的狭缝板; 和/或配置成接收光掩模的图像信息的光检测器。

8. 发明授权

US07541118B2 Phase shift mask 失效
标题翻译：相移掩模
公开(公告)号：US07541118B2
公开(公告)日：2009-06-02
申请号：US11969979
申请日：2008-01-07
申请人： Myung-Ah Kang , In-Kyun Shin
发明人： Myung-Ah Kang , In-Kyun Shin
IPC分类号： G03F1/00 , G03F1/14
CPC分类号： G03F1/34 , G03F1/30
摘要： A phase shift mask includes a first non-phase shift region, a first phase shift region adjacent the first non-phase shift region, a second non-phase shift region, a second phase shift region adjacent the second non-phase shift region, and an opaque region interposed between said second phase shift and non-phase shift regions. The first and second non-phase shift regions transmit an exposure light at its original phase, whereas the first and second phase shift regions invert the phase of the exposure light. The phase shift mask is manufactured by first forming a layer of opaque material on a transparent mask substrate. The first phase shift region and the second phase and non-phase shift regions are formed by selectively etching the opaque material and underlying portions of the mask substrate to form recesses in the substrate. On the other hand, only the opaque layer is etched from the mask substrate to form the first non-phase shift region, and is left on the substrate between the second phase shift and non-phase shift regions.
摘要翻译：相移掩模包括第一非相移区域，与第一非相移区域相邻的第一相移区域，第二非相移区域，与第二非相移区域相邻的第二相移区域，以及位于所述第二相移和非相移区域之间的不透明区域。第一和第二非相移区域以其初始相位发射曝光光，而第一和第二相移区域反转曝光光的相位。通过在透明掩模基板上首先形成不透明材料层来制造相移掩模。通过选择性地蚀刻不透明材料和掩模基板的下面部分形成第一相移区域和第二相位和非相移区域，以在衬底中形成凹陷。另一方面，从掩模基板仅蚀刻不透明层以形成第一非相移区域，并且留在第二相移与非相移区域之间的衬底上。

9. 发明授权

US07387965B2 Reference pattern for creating a defect recognition level, method of fabricating the same and method of inspecting defects using the same 失效
标题翻译：用于创建缺陷识别级别的参考图案，其制造方法以及使用其的检查缺陷的方法
公开(公告)号：US07387965B2
公开(公告)日：2008-06-17
申请号：US10848250
申请日：2004-05-18
申请人： Won-Il Cho , In-Kyun Shin , Jin-Hyung Park
发明人： Won-Il Cho , In-Kyun Shin , Jin-Hyung Park
IPC分类号： H01L21/311
CPC分类号： G03F1/84 , G01N21/93 , G01N21/9501
摘要： A reference pattern for creating a defect recognition level comprises a blank region formed on a transparent substrate and a grating region formed adjacent to the blank region, wherein the grating region includes a plurality of parallel trench lines.
摘要翻译：用于产生缺陷识别级别的参考图形包括形成在透明基板上的空白区域和与空白区域相邻形成的光栅区域，其中光栅区域包括多个平行的沟槽线。

10. 发明授权

US06919149B2 Wave guided alternating phase shift mask and fabrication method thereof 失效
标题翻译：波导交替相移掩模及其制造方法
公开(公告)号：US06919149B2
公开(公告)日：2005-07-19
申请号：US10414217
申请日：2003-04-16
申请人： Seong-hyuck Kim , Tae-moon Jeong , In-kyun Shin
发明人： Seong-hyuck Kim , Tae-moon Jeong , In-kyun Shin
IPC分类号： G02B5/18 , G03F1/30 , G03F1/68 , H01L21/027 , G01F9/00
CPC分类号： G03F1/30
摘要： A wave guided alternating phase shift mask (WGAPSM) includes a substrate transparent to light from an exposure light source and a waveguide pattern formed on the substrate to define a plurality of transparent regions that are regularly arranged. The transparent regions defined by the waveguide pattern include a plurality of shift transparent regions formed of recess regions of the substrate and a plurality of non-shift transparent regions alternatively arranged with the shift transparent regions. The provided WGAPSM minimizes an error of critical dimension difference and an X-effect while securing a large process margin and not generating opaque defects. A fabricating method for the provided WGAPSM is also provided.
摘要翻译：波导交替相移掩模（WGAPSM）包括对来自曝光光源的光透明的基板和形成在基板上的波导图案，以限定规则排列的多个透明区域。由波导图案限定的透明区域包括由基板的凹部区域形成的多个偏移透明区域和交替布置有偏移透明区域的多个非透明区域。提供的WGAPSM最大限度地减少临界尺寸差异和X效应，同时确保大的工艺裕度，并且不产生不透明缺陷。还提供了所提供的WGAPSM的制造方法。

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