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1. 发明授权

US06830950B2 Integrated method for release and passivation of MEMS structures 失效
标题翻译： MEMS结构的释放和钝化的集成方法
公开(公告)号：US06830950B2
公开(公告)日：2004-12-14
申请号：US10300970
申请日：2002-11-20
申请人： Jeffrey D. Chinn , Rolf A. Guenther , Michael B. Rattner , James A. Cooper , Toi Yue Becky Leung
发明人： Jeffrey D. Chinn , Rolf A. Guenther , Michael B. Rattner , James A. Cooper , Toi Yue Becky Leung
IPC分类号： H01L2100
CPC分类号： B81C1/0096 , B81B3/0005 , B81C2201/0176 , B81C2201/112 , B82Y30/00
摘要： Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises pretreating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures.
摘要翻译：本文公开了一种改进疏水性自组装单层（SAM）涂层到MEMS结构表面的粘附性的方法，以防止粘结。该方法包括用包含氧气和任选的氢气的源气体产生的等离子体来预处理MEMS结构的表面。处理氧化表面，然后与氢气反应以在表面上形成键合的OH基团。氢源可以作为等离子体源气体的一部分存在，使得在用等离子体处理表面期间产生结合的OH基团。本文还公开了一种用于MEMS结构的释放和钝化的集成方法。

2. 发明授权

US06902947B2 Integrated method for release and passivation of MEMS structures 失效
标题翻译： MEMS结构的释放和钝化的集成方法
公开(公告)号：US06902947B2
公开(公告)日：2005-06-07
申请号：US10435757
申请日：2003-05-09
申请人： Jeffrey D. Chinn , Rolf A. Guenther , Michael B. Rattner , James A. Cooper , Toi Yue Becky Leung , Claes H. Bjorkman
发明人： Jeffrey D. Chinn , Rolf A. Guenther , Michael B. Rattner , James A. Cooper , Toi Yue Becky Leung , Claes H. Bjorkman
IPC分类号： B81B3/00 , B81C1/00 , H01L21/00
CPC分类号： B81C1/0096 , B81B3/0005 , B81C2201/0176 , B81C2201/112 , B82Y30/00
摘要： Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises treating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures which may be adjusted to be carried out in a either a single chamber processing system or a multi-chamber processing system.
摘要翻译：本文公开了一种改进疏水性自组装单层（SAM）涂层到MEMS结构表面的粘附性的方法，以防止粘结。该方法包括用包含氧气和任选的氢气的源气体产生的等离子体处理MEMS结构的表面。处理氧化表面，然后与氢气反应以在表面上形成键合的OH基团。氢源可以作为等离子体源气体的一部分存在，使得在用等离子体处理表面期间产生结合的OH基团。本文还公开了一种用于MEMS结构的释放和钝化的集成方法，其可以被调整为在单室处理系统或多室处理系统中进行。

3. 发明授权

US06666979B2 Dry etch release of MEMS structures 失效
标题翻译： MEMS结构的干蚀刻释放
公开(公告)号：US06666979B2
公开(公告)日：2003-12-23
申请号：US10046593
申请日：2001-10-29
申请人： Jeffrey D. Chinn , Vidyut Gopal , Sofiane Soukane , Toi Yue Becky Leung
发明人： Jeffrey D. Chinn , Vidyut Gopal , Sofiane Soukane , Toi Yue Becky Leung
IPC分类号： H01L2100
CPC分类号： B81B3/0005 , B81B3/0008 , B81B2201/033 , B81C2201/016 , B81C2201/112
摘要： The present invention pertains to a method of fabricating a surface within a MEM which is free moving in response to stimulation. The free moving surface is fabricated in a series of steps which includes a release method, where release is accomplished by a plasmaless etching of a sacrificial layer material. An etch step is followed by a cleaning step in which by-products from the etch step are removed along with other contaminants which may lead to stiction. There are a series of etch and then clean steps so that a number of “cycles” of these steps are performed. Between each etch step and each clean step, the process chamber pressure is typically abruptly lowered, to create turbulence and aid in the removal of particulates which are evacuated from the structure surface and the process chamber by the pumping action during lowering of the chamber pressure. The final etch/clean cycle may be followed by a surface passivation step in which cleaned surfaces are passivated and/or coated.
摘要翻译：本发明涉及制造响应于刺激而自由移动的MEM内的表面的方法。自由移动表面是在一系列步骤中制造的，其包括释放方法，其中通过牺牲层材料的无质子蚀刻来实现释放。蚀刻步骤之后是清洁步骤，其中来自蚀刻步骤的副产物与可能导致静电的其它污染物一起被去除。存在一系列蚀刻然后清洁步骤，使得执行这些步骤的许多“循环”。在每个蚀刻步骤和每个清洁步骤之间，处理室压力通常突然降低，以产生湍流，并且有助于通过在降低腔室压力期间的泵送作用从结构表面和处理室排出的微粒去除。最终的蚀刻/清洁循环之后可以是表面钝化步骤，其中清洁的表面被钝化和/或涂覆。

4. 发明授权

US06576489B2 Methods of forming microstructure devices 失效
公开(公告)号：US06576489B2
公开(公告)日：2003-06-10
申请号：US09850923
申请日：2001-05-07
申请人： Toi Yue Becky Leung , Jeffrey D. Chinn
发明人： Toi Yue Becky Leung , Jeffrey D. Chinn
IPC分类号： H01L2100
CPC分类号： B81C1/0096 , B81B3/0005 , B81C2201/0176 , B81C2201/112 , B82Y30/00
摘要： The invention includes methods of forming microstructure devices. In an exemplary method, a substrate is provided which includes a first material and a second material. At least one of the first and second materials is exposed to vapor-phase alkylsilane-containing molecules to form a coating over the at least one of the first and second materials.

5. 发明授权

US07611976B2 Gate electrode dopant activation method for semiconductor manufacturing 失效
标题翻译：用于半导体制造的栅电极掺杂剂激活方法
公开(公告)号：US07611976B2
公开(公告)日：2009-11-03
申请号：US11428758
申请日：2006-07-05
申请人： Yi Ma , Khaled Z. Ahmed , Kevin L. Cunningham , Robert C. McIntosh , Abhilash J. Mayur , Haifan Liang , Mark Yam , Toi Yue Becky Leung , Christopher Olsen , Shulin Wang , Majeed Foad , Gary Eugene Miner
发明人： Yi Ma , Khaled Z. Ahmed , Kevin L. Cunningham , Robert C. McIntosh , Abhilash J. Mayur , Haifan Liang , Mark Yam , Toi Yue Becky Leung , Christopher Olsen , Shulin Wang , Majeed Foad , Gary Eugene Miner
IPC分类号： H01L21/425
CPC分类号： H01L21/268 , H01L21/28035 , H01L21/324
摘要： Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×1019 atoms/cm3 to about 1×1021 atoms/cm3, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800° C. or higher, such as about 1,000° C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000° C. or greater, such within a range from about 1,050° C. to about 1,400° C., for about 500 milliseconds or less, such as about 100 milliseconds or less.
摘要翻译：本发明的实施方案通常提供了在衬底上形成掺杂的含硅材料的方法。在一个实施例中，该方法提供在电介质层上沉积多晶层并且用掺杂剂注入多晶层以形成掺杂浓度在约1×10 19原子/ cm 3至约1×10 21原子/ cm 3范围内的掺杂多晶层，其中掺杂多晶层含有硅或可含有锗，碳或硼。在快速热退火期间，衬底可以被加热到约800℃或更高，例如约1000℃的温度。随后，掺杂多晶层可以暴露于激光退火并加热至约1000℃或更高的温度，例如在约1050℃至约1400℃的温度下，持续约500毫秒或更短，例如约100毫秒或更少。

6. 发明申请

US20080179282A1 MASK ETCH PROCESS 审中-公开
标题翻译：掩蔽过程
公开(公告)号：US20080179282A1
公开(公告)日：2008-07-31
申请号：US11867740
申请日：2007-10-05
申请人： Madhavi R. Chandrachood , Amitabh Sabharwal , Toi Yue Becky Leung , Michael Grimbergen
发明人： Madhavi R. Chandrachood , Amitabh Sabharwal , Toi Yue Becky Leung , Michael Grimbergen
IPC分类号： B44C1/22
CPC分类号： G03F1/80
摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one embodiment, a method is provided for processing a substrate including positioning a substrate having a metal photomask layer disposed on a optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, at least one of trifluoromethane (CHF3), sulfur hexafluoride (SF6), hexafluoroethane (C2F6) or ammonia (NH3) and optionally a chlorine-free halogen containing gas and/or an insert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.
摘要翻译：提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。在一个实施例中，提供了一种用于处理衬底的方法，包括定位具有设置在处理室中的光学透明材料上的金属光掩模层的衬底，将包含含氧气体，含氯气体的处理气体处理气体引入三氟甲烷（CHF 3 3），六氟化硫（SF 6 S 6），六氟乙烷（C 2 F 6 N 3））或氨（NH 3）和任选的无氯卤素气体和/或插入气体加入到处理室中，在处理室中产生处理气体的等离子体，并暴露设置在基板上的金属层的部分。

7. 发明授权

US07078302B2 Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal 有权
标题翻译：包括激光退火的半导体制造用栅电极掺杂剂激活方法
公开(公告)号：US07078302B2
公开(公告)日：2006-07-18
申请号：US10784904
申请日：2004-02-23
申请人： Yi Ma , Khaled Z. Ahmed , Kevin L. Cunningham , Robert C. McIntosh , Abhilash J. Mayur , Haifan Liang , Mark Yam , Toi Yue Becky Leung , Christopher Olsen , Shulin Wang , Majeed Foad , Gary Eugene Miner
发明人： Yi Ma , Khaled Z. Ahmed , Kevin L. Cunningham , Robert C. McIntosh , Abhilash J. Mayur , Haifan Liang , Mark Yam , Toi Yue Becky Leung , Christopher Olsen , Shulin Wang , Majeed Foad , Gary Eugene Miner
IPC分类号： H01L21/336 , H01L21/22 , H01L21/38 , H01L21/3205 , H01L21/4763
CPC分类号： H01L21/268 , H01L21/28035 , H01L21/324
摘要： In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.
摘要翻译：在一个实施例中，本发明通常提供了一种用于退火衬底上的掺杂层的方法，包括将多晶层沉积到栅极氧化物层并用掺杂剂注入多晶层以形成掺杂的多晶层。该方法还包括将掺杂多晶层暴露于快速热退火以便容易地将掺杂剂分布在整个多晶层中。随后，该方法包括将掺杂多晶层暴露于激光退火以激活多晶层上部的掺杂剂。

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