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1. 发明授权

US08765618B2 Annealing apparatus using two wavelengths of continuous wave laser radiation 有权
公开(公告)号：US08765618B2
公开(公告)日：2014-07-01
申请号：US13485699
申请日：2012-05-31
申请人： Dean Jennings , Haifan Liang , Mark Yam , Vijay Parihar , Abhilash J. Mayur , Aaron Muir Hunter , Bruce E. Adams , Joseph M. Ranish
发明人： Dean Jennings , Haifan Liang , Mark Yam , Vijay Parihar , Abhilash J. Mayur , Aaron Muir Hunter , Bruce E. Adams , Joseph M. Ranish
IPC分类号： H01L21/268
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/0613 , B23K26/073 , B23K26/0732 , B23K26/0736 , B23K26/0738 , B23K26/352 , H01L21/02675 , H01L21/2026 , H01L21/268 , H01L21/324
摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

2. 发明授权

US08653408B2 Annealing apparatus using two wavelengths of continuous wave laser radiation 失效
标题翻译：使用两个波长的连续波激光辐射的退火装置
公开(公告)号：US08653408B2
公开(公告)日：2014-02-18
申请号：US13485666
申请日：2012-05-31
申请人： Dean Jennings , Haifan Liang , Mark Yam , Vijay Parihar , Abhilash J. Mayur , Aaron Hunter , Bruce Adams , Joseph Michael Ranish
发明人： Dean Jennings , Haifan Liang , Mark Yam , Vijay Parihar , Abhilash J. Mayur , Aaron Hunter , Bruce Adams , Joseph Michael Ranish
IPC分类号： B23K26/067
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/0613 , B23K26/073 , B23K26/0732 , B23K26/0736 , B23K26/0738 , B23K26/352 , H01L21/02675 , H01L21/2026 , H01L21/268 , H01L21/324
摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
摘要翻译：例如，将发射为10.6μm的CO 2的第一激光源聚焦在作为线束的硅晶片上的第一激光源和例如在808nm发射的GaAs激光棒的第二激光源的热处理装置和方法是作为围绕线束的较大波束聚焦在晶片上。沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

3. 发明授权

US08503497B2 Protection device for solid state laser 有权
标题翻译：固态激光器保护装置
公开(公告)号：US08503497B2
公开(公告)日：2013-08-06
申请号：US13323278
申请日：2011-12-12
申请人： Oleg Serebryanov , Alexander Goldin , Abhilash J. Mayur , Leonid M. Tertitski
发明人： Oleg Serebryanov , Alexander Goldin , Abhilash J. Mayur , Leonid M. Tertitski
IPC分类号： H01S3/00
CPC分类号： H01S3/0014 , B23K26/0626 , B23K26/354 , H01S3/10038
摘要： Embodiments provide systems, devices, and methods for controlling a laser. The system includes a controller to control a laser, a ramp generator to ramp down laser power, the ramp generator electrically coupled with the controller and coupleable with the laser, and a hardware protection system electrically coupled with the ramp generator, wherein the ramp generator monitors signals sent from the controller and the hardware protection system to the ramp generator to detect signal failure and ramps down the laser power upon signal failure detection. The method includes sending a control status signal from a controller for a laser to a ramp generator, monitoring the control status signal for missing pulses, sending a hardware interlock status signal from a hardware protection system to the ramp generator, monitoring the hardware interlock status signal for signal failure, and ramping down laser power upon detection of missing pulses or signal failure.
摘要翻译：实施例提供了用于控制激光器的系统，装置和方法。该系统包括控制激光器的控制器，降低激光功率的斜坡发生器，与控制器电耦合并与激光器耦合的斜坡发生器以及与斜坡发生器电耦合的硬件保护系统，其中斜坡发生器监视从控制器和硬件保护系统发送到斜坡发生器的信号，以在信号故障检测时检测信号故障并降低激光功率。该方法包括将控制状态信号从用于激光的控制器发送到斜坡发生器，监视用于丢失脉冲的控制状态信号，从硬件保护系统向斜坡发生器发送硬件互锁状态信号，监视硬件互锁状态信号用于信号故障，并且在检测到丢失的脉冲或信号故障时降低激光功率。

4. 发明授权

US08434937B2 Method and apparatus for detecting the substrate temperature in a laser anneal system 有权
标题翻译：用于检测激光退火系统中的衬底温度的方法和装置
公开(公告)号：US08434937B2
公开(公告)日：2013-05-07
申请号：US12475404
申请日：2009-05-29
申请人： Blake Koelmel , Abhilash J. Mayur
发明人： Blake Koelmel , Abhilash J. Mayur
IPC分类号： G01J5/02 , H01L21/00
CPC分类号： H01L21/67248 , G01J5/048 , H01L21/67253 , H01L21/68742
摘要： Embodiments of the invention provide a method and an apparatus for detecting the temperature of a substrate surface. In one embodiment, a method for measuring the temperature is provided which includes exposing the surface of the substrate to a laser beam radiating from a laser source, radiating emitted light from a portion of the surface of the substrate, through the shadow ring, and towards a thermal sensor, and determining the temperature of the portion of the surface of the substrate from the emitted light. The substrate may be disposed on a substrate support within a treatment region and a shadow ring may be disposed between the laser source and the surface of the substrate. The shadow ring may be selectively opaque to the laser beam and transparent to the emitted light.
摘要翻译：本发明的实施例提供了一种用于检测衬底表面的温度的方法和装置。在一个实施例中，提供了一种用于测量温度的方法，其包括将衬底的表面暴露于从激光源辐射的激光束，从衬底表面的一部分通过阴影环辐射发射的光，并朝向热传感器，并且从所发射的光确定衬底的表面部分的温度。衬底可以设置在处理区域内的衬底支撑件上，并且阴影环可以设置在激光源和衬底的表面之间。阴影环可以选择性地对激光束不透明并且对于发射的光是透明的。

5. 发明授权

US08288683B2 Fast axis beam profile shaping for high power laser diode based annealing system 有权
标题翻译：基于高功率激光二极管的退火系统的快轴光束轮廓成形
公开(公告)号：US08288683B2
公开(公告)日：2012-10-16
申请号：US12291002
申请日：2008-11-04
申请人： Dean Jennings , Abhilash J. Mayur , Timothy N. Thomas , Vijay Parihar , Vedapuram S. Achutharaman , Randhir P. S. Thakur
发明人： Dean Jennings , Abhilash J. Mayur , Timothy N. Thomas , Vijay Parihar , Vedapuram S. Achutharaman , Randhir P. S. Thakur
IPC分类号： B23K26/00
CPC分类号： B23K26/0738 , B23K26/0613 , B23K26/0676 , H01L21/268 , H01L29/7833 , Y10T117/1016
摘要： A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.
摘要翻译：用于退火半导体工件的动态表面退火装置具有用于支撑工件的工件支撑件，用于沿着快轴相对于彼此扫描光源和工件支撑件的光源和扫描装置。光源包括大致以发射器的连续行布置的激光发射器的阵列，该列横向于快轴。多个准直的小透镜叠加在发射器排中的相应行上，并沿着快轴提供准直。所选择的小透镜具有对应于沿着快轴的光束偏转的相应行发射器的一个或一系列光学偏转角。将来自激光发射器阵列的光聚焦到工件的表面上，以根据偏转角的顺序形成一系列沿着快轴间隔开的快轴的线束。

6. 发明申请

US20110095007A1 THERMAL FLUX PROCESSING BY SCANNING A FOCUSED LINE BEAM 有权
标题翻译：通过扫描聚焦线束的热通量处理
公开(公告)号：US20110095007A1
公开(公告)日：2011-04-28
申请号：US12980579
申请日：2010-12-29
申请人： Dean C. Jennings , Mark Yam , Abhilash J. Mayur , Vernon Behrens , Paul A. O'Brien , Leonid M. Tertitski , Alexander Goldin
发明人： Dean C. Jennings , Mark Yam , Abhilash J. Mayur , Vernon Behrens , Paul A. O'Brien , Leonid M. Tertitski , Alexander Goldin
IPC分类号： B23K26/06 , B23K26/08
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/034 , B23K26/04 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0652 , B23K26/0665 , B23K26/0738 , B23K26/082 , B23K26/083 , B23K26/0838 , B23K26/0869 , B23K26/123 , B23K26/125 , B23K26/142 , B23K26/32 , B23K26/34 , B23K26/705 , B23K2101/34 , B23K2101/40 , B23K2103/08 , B23K2103/50 , C23C8/00 , C23C8/10 , C23C8/22 , C23C16/047 , C23C16/481 , G02B27/0955 , H01L21/00 , H01L21/2026 , H01L21/67115
摘要： The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.
摘要翻译：热处理装置包括平台，连续波电磁辐射源，一系列透镜，平移机构，检测模块，三维自动对焦以及计算机系统。该台被配置为在其上接收基板。连续波电磁辐射源被设置在与该台相邻的位置，并且被配置成沿着朝向衬底的路径发射连续波电磁辐射。该系列透镜设置在连续波电磁辐射源和台之间，并被配置为将连续波电磁辐射冷凝成基片表面上的连续波电磁辐射线。翻译机构被配置为相对于彼此平移连续波电磁辐射的阶段和线。检测模块位于路径内，被配置为检测连续波电磁辐射。

7. 发明申请

US20100068898A1 MANAGING THERMAL BUDGET IN ANNEALING OF SUBSTRATES 审中-公开
标题翻译：管理衬底退火中的热预算
公开(公告)号：US20100068898A1
公开(公告)日：2010-03-18
申请号：US12212157
申请日：2008-09-17
申请人： STEPHEN MOFFATT , Abhilash J. Mayur , Sundar Ramamurthy , Joseph Ranish , Aaron Hunter
发明人： STEPHEN MOFFATT , Abhilash J. Mayur , Sundar Ramamurthy , Joseph Ranish , Aaron Hunter
IPC分类号： H01L21/00 , F27D11/00
CPC分类号： H01L21/67115 , B23K26/0042 , B23K26/064 , B23K26/08 , B23K26/127 , F27B17/0025 , H01L21/67248
摘要： A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.
摘要翻译：提供了一种处理基板的方法和装置。衬底位于热处理室中的支撑件上。电磁辐射被引向衬底以退火衬底的一部分。其他电磁辐射被引向衬底以预热衬底的一部分。预热减少了预热区域和退火区域之间的边界处的热应力。根据具体实施方案的需要，预期任何数量的退火和预热区域具有变化的形状和温度曲线。可以使用任何方便的电磁辐射源，例如激光器，加热灯，白光灯或闪光灯。

8. 发明授权

US07312148B2 Copper barrier reflow process employing high speed optical annealing 失效
标题翻译：铜屏障回流工艺采用高速光学退火
公开(公告)号：US07312148B2
公开(公告)日：2007-12-25
申请号：US11199570
申请日：2005-08-08
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , H01L21/76843 , H01L21/76864 , H01L21/76873
摘要： A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light.
摘要翻译：在半导体衬底上形成用于薄膜结构的阻挡层的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层纵横比开口，包括垂直侧壁，并且在第一阻挡层上沉积包含阻挡金属的金属阻挡层。该方法还包括通过（a）将来自连续波激光阵列的光引导到至少部分穿过薄膜结构延伸的光线中来回流金属阻挡层，以及（b）相对于薄的平移光线薄膜结构在横向于光线的方向上。

9. 发明授权

US07109098B1 Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing 失效
标题翻译：半导体结形成工艺包括光吸收层的低温等离子体沉积和高速光学退火
公开(公告)号：US07109098B1
公开(公告)日：2006-09-19
申请号：US11131904
申请日：2005-05-17
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/26
CPC分类号： H01L21/268 , H01L21/02118 , H01L21/0212 , H01L21/02274 , H01L21/02321 , H01L21/26513 , H01L21/3127 , H01L21/314 , H01L21/3146
摘要： A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and optically annealing the workpiece so as to activate dopant impurities in the semiconductor material.
摘要翻译：在工件的半导体材料中形成半导体结的方法包括在半导体材料的选定区域中的离子注入掺杂剂杂质，将光吸收材料前体气体引入到包含工件的腔室中，在折返中产生RF振荡环形等离子体电流路径，其包括通过施加RF源功率覆盖工件的工艺区域，以便在工件上沉积光吸收材料层，并对工件进行光学退火，以激活半导体材料中的掺杂剂杂质。

10. 发明授权

US6151446A Apparatus and method for thermally processing substrates including a processor using multiple detection signals 有权
标题翻译：用于热处理基板的装置和方法，包括使用多个检测信号的处理器
公开(公告)号：US6151446A
公开(公告)日：2000-11-21
申请号：US348147
申请日：1999-07-06
申请人： Aaron Hunter , Mark Yam , Abhilash J. Mayur
发明人： Aaron Hunter , Mark Yam , Abhilash J. Mayur
IPC分类号： G01J5/02 , F27D19/00 , F27D21/00 , G01J5/00 , G01J5/08 , G01J5/10 , H01L21/00 , H01L21/205 , H01L21/324
CPC分类号： H01L21/67248 , H01L21/67115
摘要： Apparatus and methods of thermally processing a substrate inside a processing chamber including a radiation source for heating the substrate are described. In one aspect, a detection system is configured to receive radiation from the substrate and to produce first and second detection system signals respectively representative of different first and second spectral portions of the received radiation. A processor is coupled to the detection system and configured to compute a measure of substrate temperature based upon the second detection system signal and to compute an indication of the relative accuracy of the computed measure of substrate temperature based upon the first detection system signal. In another aspect, the substrate is radiatively heated; radiation is received from the substrate and an intensity signal representative of the intensity of the received radiation is produced; an indication of the rate at which the substrate is being heated is computed based upon the intensity signal; and when the substrate is placed onto a substrate support inside the processing chamber is controlled based upon the computed heating rate indication.
摘要翻译：描述了在包括用于加热衬底的辐射源的处理室内热处理衬底的装置和方法。在一个方面，检测系统被配置为从衬底接收辐射并产生分别代表所接收辐射的不同第一和第二光谱部分的第一和第二检测系统信号。处理器耦合到检测系统并且被配置为基于第二检测系统信号计算衬底温度的量度，并且基于第一检测系统信号计算所计算的衬底温度的测量的相对精度的指示。另一方面，衬底被辐射加热; 从衬底接收辐射，产生表示接收辐射强度的强度信号; 基于强度信号计算衬底被加热的速率的指示; 并且当基板被放置在基板上时，基于计算的加热速率指示来控制处理室内部的基板。

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