专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09725805B2 Apparatus and method for controlled application of reactive vapors to produce thin films and coatings 有权
公开(公告)号：US09725805B2
公开(公告)日：2017-08-08
申请号：US11445706
申请日：2006-06-02
申请人： Boris Kobrin , Romuald Nowak , Richard C. Yi , Jeffrey D. Chinn
发明人： Boris Kobrin , Romuald Nowak , Richard C. Yi , Jeffrey D. Chinn
IPC分类号： C23C16/448 , C23C16/455 , B05D1/00 , B82Y30/00 , B05D3/14
CPC分类号： C23C16/45557 , B05D1/60 , B05D3/142 , B82Y30/00 , C23C16/4485 , C23C16/45561
摘要： A vapor phase deposition method and apparatus for the application of thin layers and coatings on substrates. The method and apparatus are useful in the fabrication of electronic devices, micro-electromechanical systems (MEMS), Bio-MEMS devices, micro and nano imprinting lithography, and microfluidic devices. The apparatus used to carry out the method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. The apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the coating formation process. The precise addition of each of the reactants in vapor form is metered into a predetermined set volume at a specified temperature to a specified pressure, to provide a highly accurate amount of reactant.

2. 发明授权

US07638167B2 Controlled deposition of silicon-containing coatings adhered by an oxide layer 有权
标题翻译：由氧化物层附着的含硅涂层的控制沉积
公开(公告)号：US07638167B2
公开(公告)日：2009-12-29
申请号：US10862047
申请日：2004-06-04
申请人： Boris Kobrin , Romuald Nowak , Richard C. Yi , Jeffrey D. Chinn
发明人： Boris Kobrin , Romuald Nowak , Richard C. Yi , Jeffrey D. Chinn
IPC分类号： C23C16/00 , C23C14/10
CPC分类号： B82Y30/00 , C23C16/0227 , C23C16/402
摘要： We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.
摘要翻译：我们已经开发了一种改进的气相沉积方法和装置，用于在基底上施加膜/涂层。该方法提供在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。除了控制添加到处理室中的反应物的量之外，本发明需要精确控制处理室中的总压力（其小于大气压），存在于处理室中的每种气态组分的部分蒸气压处理室，衬底温度以及典型地在所述处理室内的主处理表面的温度。对这种变量组合的控制决定了使用该方法形成的膜/涂层或多层膜/涂层的许多特性。通过改变这些工艺参数，可以控制所生产的膜/涂层的粗糙度和厚度。

3. 发明授权

US06900133B2 Method of etching variable depth features in a crystalline substrate 失效
标题翻译：在晶体衬底中蚀刻可变深度特征的方法
公开(公告)号：US06900133B2
公开(公告)日：2005-05-31
申请号：US10247467
申请日：2002-09-18
申请人： Jeffrey D. Chinn , Michael B. Rattner , James A. Cooper , Rolf A. Guenther
发明人： Jeffrey D. Chinn , Michael B. Rattner , James A. Cooper , Rolf A. Guenther
IPC分类号： B81C1/00 , H01L21/3065 , H01L21/308 , H01L21/302
CPC分类号： B81C1/00626 , B81B2201/0214 , B81B2201/058 , B81C99/009 , B81C2201/0132 , H01L21/3065 , H01L21/3081
摘要： Disclosed herein is an easy and well-integrated method of etching features to different depths in a crystalline substrate, such as a single-crystal silicon substrate. The method utilizes a specialized masking process and takes advantage of a highly selective etch process. The method provides a system of interconnected, variable depth reservoirs and channels. The plasma used to etch the channels may be designed to provide a sidewall roughness of about 200 nm or less. The resulting structure can be used in various MEMS applications, including biomedical MEMS and MEMS for semiconductor applications.
摘要翻译：本文公开了一种在晶体衬底（例如单晶硅衬底）中对不同深度蚀刻特征的易于且良好集成的方法。该方法利用专门的掩蔽过程并利用高选择性蚀刻工艺。该方法提供了一个互连的，可变深度的储层和通道的系统。用于蚀刻通道的等离子体可以设计成提供约200nm或更小的侧壁粗糙度。所得结构可用于各种MEMS应用，包括用于半导体应用的生物医学MEMS和MEMS。

4. 发明授权

US06887732B2 Microstructure devices, methods of forming a microstructure device and a method of forming a MEMS device 失效
标题翻译：微结构器件，形成微结构器件的方法和形成MEMS器件的方法
公开(公告)号：US06887732B2
公开(公告)日：2005-05-03
申请号：US09850951
申请日：2001-05-07
申请人： Vidyut Gopal , Jeffrey D. Chinn
发明人： Vidyut Gopal , Jeffrey D. Chinn
IPC分类号： B81B3/00 , H01L21/00
CPC分类号： B81C1/00166 , B81B2203/0118
摘要： Microstructure devices, methods of forming a microstructure device and a method of forming a MEMS device are described. According to one aspect, a microstructure device includes: a semiconductive substrate; a monolithic microstructure device feature coupled with the semiconductive substrate, and wherein at least a portion of the microstructure device feature is configured to move relative to the semiconductive substrate; and a conductive structure provided directly upon the microstructure device feature.
摘要翻译：描述微结构器件，形成微结构器件的方法和形成MEMS器件的方法。根据一个方面，微结构器件包括：半导体衬底; 与所述半导体衬底耦合的单片微结构器件特征，并且其中所述微结构器件特征的至少一部分被配置为相对于所述半导体衬底移动; 以及直接设置在微结构器件特征上的导电结构。

5. 发明授权

US06830950B2 Integrated method for release and passivation of MEMS structures 失效
标题翻译： MEMS结构的释放和钝化的集成方法
公开(公告)号：US06830950B2
公开(公告)日：2004-12-14
申请号：US10300970
申请日：2002-11-20
申请人： Jeffrey D. Chinn , Rolf A. Guenther , Michael B. Rattner , James A. Cooper , Toi Yue Becky Leung
发明人： Jeffrey D. Chinn , Rolf A. Guenther , Michael B. Rattner , James A. Cooper , Toi Yue Becky Leung
IPC分类号： H01L2100
CPC分类号： B81C1/0096 , B81B3/0005 , B81C2201/0176 , B81C2201/112 , B82Y30/00
摘要： Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises pretreating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures.
摘要翻译：本文公开了一种改进疏水性自组装单层（SAM）涂层到MEMS结构表面的粘附性的方法，以防止粘结。该方法包括用包含氧气和任选的氢气的源气体产生的等离子体来预处理MEMS结构的表面。处理氧化表面，然后与氢气反应以在表面上形成键合的OH基团。氢源可以作为等离子体源气体的一部分存在，使得在用等离子体处理表面期间产生结合的OH基团。本文还公开了一种用于MEMS结构的释放和钝化的集成方法。

6. 发明授权

US06599842B2 Method for rounding corners and removing damaged outer surfaces of a trench 失效
标题翻译：用于对角落进行倒角并去除损坏的沟槽外表面的方法
公开(公告)号：US06599842B2
公开(公告)日：2003-07-29
申请号：US09450475
申请日：1999-11-29
申请人： John Chao , Mohit Jain , Jeffrey D. Chinn
发明人： John Chao , Mohit Jain , Jeffrey D. Chinn
IPC分类号： H01L21302
CPC分类号： H01L21/67069 , H01L21/3065
摘要： A method for processing a substrate disposed in a substrate processing chamber to modify the contour of a trench formed on the substrate. The substrate processing chamber is the type that has a coil and a plasma generation system including a source power system operatively coupled to the coil and a bias power system operatively coupled to the substrate process chamber. The method includes transferring the substrate into the substrate process chamber. Thereafter, the substrate is exposed to a plasma formed from a first process gas consisting essentially of a sputtering agent by applying RF energy from the source power system to the coil. The plasma is biased toward the substrate by applying bias power to the substrate process chamber. Thereafter, the substrate is exposed to a plasma formed from a second process gas without applying bias power or applying minimal bias power to the substrate process chamber.
摘要翻译：一种用于处理设置在基板处理室中以改变形成在基板上的沟槽的轮廓的基板的方法。衬底处理室是具有线圈和等离子体产生系统的类型，其包括可操作地耦合到线圈的源电力系统和可操作地耦合到衬底处理室的偏置电力系统。该方法包括将衬底转移到衬底处理室中。此后，通过将来自源电力系统的RF能量施加到线圈，将衬底暴露于由基本上由溅射剂组成的第一工艺气体形成的等离子体。通过向衬底处理室施加偏置功率将等离子体偏压到衬底。此后，将衬底暴露于由第二工艺气体形成的等离子体，而不施加偏置功率或向衬底处理室施加最小的偏置功率。

7. 发明授权

US06518190B1 Plasma reactor with dry clean apparatus and method 失效
标题翻译：具有干洗装置和方法的等离子体反应器
公开(公告)号：US06518190B1
公开(公告)日：2003-02-11
申请号：US09470560
申请日：1999-12-23
申请人： Thorsten Lill , Jeffrey D. Chinn
发明人： Thorsten Lill , Jeffrey D. Chinn
IPC分类号： H01L2100
CPC分类号： H01J37/32862 , H01J37/321
摘要： A preferred embodiment of the plasma reactor of the present invention provides a chamber adapted to process a workpiece having at least one wall capable of allowing inductive power coupling into the reactor chamber. A source power antenna, capable of generating a processing plasma, confronts a portion of the at least one wall. A dry clean antenna is located adjacent the chamber beside a portion of the at least one wall not confronted by the source power antenna. During workpiece processing, the dry clean antenna preferably has essentially a floating potential. After workpiece processing has ceased, a dry clean plasma may be generated by inductive coupling using the dry clean antenna. Embodiments of the present invention allow dry clean plasma characteristics to be optimized to improve dry clean effectiveness. The source power antenna also may couple power to the dry clean plasma, preferably in parallel with the dry clean antenna. With such embodiments, the source power antenna may be operated so that it couples less power to the dry clean plasma, while the dry clean antenna couples more. This allows sputtering of the chamber wall under the source power antenna to be reduced and allows more effective removal of accumulated deposits.
摘要翻译：本发明的等离子体反应器的一个优选实施例提供了适于处理工件的室，该工件具有至少一个能够将感应功率耦合到反应器室中的壁。能够产生处理等离子体的源功率天线面对至少一个壁的一部分。干净的天线位于与源功率天线不相对的至少一个壁的一部分旁边的室附近。在工件加工过程中，干式天线优选具有基本的浮动电位。在工件处理停止之后，可以通过使用干式天线的电感耦合来产生干净的等离子体。本发明的实施例允许优化干洗等离子体特性以改善干洗效果。源功率天线还可以将功率耦合到干洗等离子体，优选地与干净的天线并联。通过这样的实施例，源功率天线可以被操作，使得它将更少的功率耦合到干净的等离子体，而干净的天线更多耦合。这允许在源功率天线下方的室壁的溅射被减少并且允许更有效地去除积累的沉积物。

8. 发明授权

US06270634B1 Method for plasma etching at a high etch rate 失效
标题翻译：用于以高蚀刻速率进行等离子体蚀刻的方法
公开(公告)号：US06270634B1
公开(公告)日：2001-08-07
申请号：US09430798
申请日：1999-10-29
申请人： Ajay Kumar , Anisul Khan , Jeffrey D Chinn , Dragan Podlesnik
发明人： Ajay Kumar , Anisul Khan , Jeffrey D Chinn , Dragan Podlesnik
IPC分类号： C23C1434
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32935 , H01L21/3065
摘要： This invention is directed to a method for rapid plasma etching of materials which are difficult to etch at a high rate. The method is particularly useful in plasma etching silicon nitride layers more than five microns thick. The method includes the use of a plasma source gas that includes an etchant gas and a sputtering gas. Two separate power sources are used in the etching process and the power to each power source as well as the ratio between the flow rates of the etchant gas and sputtering gas can be advantageously adjusted to obtain etch rates of silicon nitride greater than two microns per minute. Additionally, an embodiment of the method of the invention provides a two etch step process which combines a high etch rate process with a low etch rate process to achieve high throughput while minimizing the likelihood of damage to underlying layers. The first etch step of the two-step method provides a high etch rate of about two microns per minute to remove substantially all of a layer to be etched. In the second step, a low etch rate process having an etch rate below about two microns per minute is used to remove any residual material not removed by the first etch step.
摘要翻译：本发明涉及用于快速等离子体蚀刻难以高速蚀刻的材料的方法。该方法在等离子体蚀刻中超过5微米厚的氮化硅层特别有用。该方法包括使用包括蚀刻剂气体和溅射气体的等离子体源气体。在蚀刻工艺中使用两个单独的电源，并且可以有利地调整蚀刻剂气体和溅射气体的流量之间的比例，以获得大于每分钟2微米的氮化硅的蚀刻速率。另外，本发明的方法的一个实施例提供了两个蚀刻步骤方法，其将高蚀刻速率工艺与低蚀刻速率工艺组合以实现高通量，同时最小化对下层的损伤的可能性。两步法的第一蚀刻步骤提供了每分钟约2微米的高蚀刻速率，以便基本上除去所有待蚀刻的层。在第二步骤中，使用蚀刻速率低于每分钟约2微米的低蚀刻速率工艺来去除通过第一蚀刻步骤未被去除的任何残留材料。

9. 发明申请

US20220249885A1 PATHOGEN CAPTURE USING ACTIVE SURFACE MODIFICATION 有权
公开(公告)号：US20220249885A1
公开(公告)日：2022-08-11
申请号：US17727795
申请日：2022-04-24
申请人： Farzin HATAMI , Jeffrey D. CHINN
发明人： Farzin HATAMI , Jeffrey D. CHINN
IPC分类号： A62B23/02 , A61L9/00 , A01N43/38 , B01D46/00 , B01D39/16
摘要： Fabrics, such as employed in air filters, facemasks, garments, or PPE, are coated with pathogen-binding agents, such as chemicals that bind to protein-encapsulated airborne pathogens. Some of these pathogen-binding agents include multifunctional chemicals that bind to the fabrics and to exposed proteins and/or glycans on the pathogens. Some of these pathogen-binding agents include multifunctional silanes. Some of these pathogen-binding agents include multifunctional phosphanes or phosphonates.

10. 发明授权

US08178162B2 Controlled deposition of silicon-containing coatings adhered by an oxide layer 有权
标题翻译：由氧化物层附着的含硅涂层的控制沉积
公开(公告)号：US08178162B2
公开(公告)日：2012-05-15
申请号：US12592183
申请日：2009-11-19
申请人： Boris Kobrin , Romuald Nowak , Richard C. Yi , Jeffrey D. Chinn
发明人： Boris Kobrin , Romuald Nowak , Richard C. Yi , Jeffrey D. Chinn
IPC分类号： C23C16/00
CPC分类号： B82Y30/00 , C23C16/0227 , C23C16/402
摘要： We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.
摘要翻译：我们已经开发了一种改进的气相沉积方法和装置，用于在基底上施加膜/涂层。该方法提供在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。除了控制添加到处理室中的反应物的量之外，本发明需要精确控制处理室中的总压力（其小于大气压），存在于处理室中的每种气态组分的部分蒸气压处理室，衬底温度以及典型地在所述处理室内的主处理表面的温度。对这种变量组合的控制决定了使用该方法形成的膜/涂层或多层膜/涂层的许多特性。通过改变这些工艺参数，可以控制所生产的膜/涂层的粗糙度和厚度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式