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1. 发明授权

US10170277B2 Apparatus and methods for dry etch with edge, side and back protection 有权
公开(公告)号：US10170277B2
公开(公告)日：2019-01-01
申请号：US13455347
申请日：2012-04-25
申请人： Saravjeet Singh , Graeme Jamieson Scott , Amitabh Sabharwal , Ajay Kumar
发明人： Saravjeet Singh , Graeme Jamieson Scott , Amitabh Sabharwal , Ajay Kumar
IPC分类号： C23C16/00 , H01J37/32
摘要： Embodiments of the present invention generally relate to a method and apparatus for plasma etching substrates and, more specifically, to a method and apparatus with protection for edges, sides and backs of the substrates being processed. Embodiments of the present invention provide an edge protection plate with an aperture smaller in size than a substrate being processed, wherein the edge protection plate may be positioned in close proximity to the substrate in a plasma chamber. The edge protection plate overlaps edges and/or sides on the substrate to provide protection to reflective coatings on the edge, sides, and back of the substrate.

2. 发明申请

US20130092655A1 METHOD FOR ETCHING AN EUV REFLECTIVE MULTI-MATERIAL LAYERS UTILIZED TO FORM A PHOTOMASK 审中-公开
标题翻译：用于蚀刻形成光电子的反射多层材料层的方法
公开(公告)号：US20130092655A1
公开(公告)日：2013-04-18
申请号：US13649187
申请日：2012-10-11
申请人： Keven Yu , Michael Grimbergen , Madhavi Chadrachood , Amitabh Sabharwal , Ajay Kumar
发明人： Keven Yu , Michael Grimbergen , Madhavi Chadrachood , Amitabh Sabharwal , Ajay Kumar
IPC分类号： B44C1/22
CPC分类号： B44C1/227 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/80
摘要： A method and apparatus for etching photomasks are provided herein. In one embodiment, a forming gas use utilized to remove a mask layer utilized film stack having a multi-material layer having at least two different materials. In another embodiment, a method of etching a multi-material layer disposed on a photomask includes providing a film stack in an etching chamber, the film stack having a multi-material layer having at least two different materials disposed therein partially exposed through a patterned layer, providing a gas mixture including at least one fluorine containing gas and an oxygen containing gas in to a processing chamber, supplying a RF power in the gas mixture to form a plasma, and etching the multi-material layer through the patterned layer.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。在一个实施方案中，用于除去掩模层的成形气体用途使用的膜堆叠具有具有至少两种不同材料的多材料层。在另一个实施例中，蚀刻设置在光掩模上的多材料层的方法包括在蚀刻室中提供膜堆叠，所述膜堆叠具有多层材料层，所述多层材料层具有布置在其中的至少两种不同的材料，其中部分地通过图案化层提供包含至少一种含氟气体和含氧气体的气体混合物到处理室中，在气体混合物中提供RF功率以形成等离子体，以及通过图案化层蚀刻多层材料层。

3. 发明申请

US20150090401A1 NOVEL ELECTRODES FOR ETCH 有权
标题翻译：用于蚀刻的新电极
公开(公告)号：US20150090401A1
公开(公告)日：2015-04-02
申请号：US14042490
申请日：2013-09-30
申请人： Banqiu Wu , Saravjeet Singh , Amitabh Sabharwal , Ajay Kumar
发明人： Banqiu Wu , Saravjeet Singh , Amitabh Sabharwal , Ajay Kumar
IPC分类号： H01J37/32
CPC分类号： H01J37/32082 , H01J37/32541 , H01J37/32568 , H01J37/32577 , Y10T156/10
摘要： An electrode having a first portion and a second portion is formed over a substrate to couple to a bias RF power. The first portion is configured to compensate for an electric field at the second portion to even out a distribution of an etching strength over a workpiece placed over the electrode.
摘要翻译：具有第一部分和第二部分的电极形成在衬底上以耦合到偏置RF功率。第一部分被配置为补偿第二部分处的电场，以便平均在放置在电极上的工件上的蚀刻强度分布。

4. 发明授权

US08568553B2 Method and apparatus for photomask plasma etching 有权
标题翻译：光掩模等离子体蚀刻的方法和装置
公开(公告)号：US08568553B2
公开(公告)日：2013-10-29
申请号：US13045239
申请日：2011-03-10
申请人： Ajay Kumar , Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Amitabh Sabharwal , Sheeba J. Panayil , Alan Hiroshi Ouye
发明人： Ajay Kumar , Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Amitabh Sabharwal , Sheeba J. Panayil , Alan Hiroshi Ouye
IPC分类号： H01L21/306
CPC分类号： H01J37/32422 , H01J37/3244 , H01J37/32449
摘要： A method and apparatus for etching photomasks is provided herein. In one embodiment, the apparatus comprises a process chamber having a support pedestal adapted for receiving a photomask. An ion-neutral shield is disposed above the pedestal and a deflector plate assembly is provided above the ion-neutral shield. The deflector plate assembly defines a gas flow direction for process gases towards the ion-neutral shield, while the ion-neutral shield is used to establish a desired distribution of ion and neutral species in a plasma for etching the photomask.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。在一个实施例中，该装置包括具有适于接收光掩模的支撑基座的处理室。离子中性屏蔽设置在基座上方，偏转板组件设置在离子中性屏蔽层上方。导流板组件限定了朝向离子中性屏蔽的工艺气体的气体流动方向，而离子中性屏蔽用于建立用于蚀刻光掩模的等离子体中的离子和中性物质的期望分布。

5. 发明申请

US20100276391A1 INDUCTIVELY COUPLED PLASMA REACTOR HAVING RF PHASE CONTROL AND METHODS OF USE THEREOF 审中-公开
标题翻译：具有射频相控制的电感耦合等离子体反应器及其使用方法
公开(公告)号：US20100276391A1
公开(公告)日：2010-11-04
申请号：US12748519
申请日：2010-03-29
申请人： MICHAEL N. GRIMBERGEN , KEVEN KAISHENG YU , ALAN HIROSHI OUYE , MADHAVI R. CHANDRACHOOD , VALENTIN N. TODOROW , TOI YUE BECKY LEUNG , RICHARD LEWINGTON , DARIN BIVENS , RENEE KOCH , IBRAHIM M. IBRAHIM , AMITABH SABHARWAL , AJAY KUMAR
发明人： MICHAEL N. GRIMBERGEN , KEVEN KAISHENG YU , ALAN HIROSHI OUYE , MADHAVI R. CHANDRACHOOD , VALENTIN N. TODOROW , TOI YUE BECKY LEUNG , RICHARD LEWINGTON , DARIN BIVENS , RENEE KOCH , IBRAHIM M. IBRAHIM , AMITABH SABHARWAL , AJAY KUMAR
IPC分类号： H05H1/46
CPC分类号： H01J37/32165 , H01J37/321 , H01J37/32174 , H01L21/67069
摘要： Methods of operating inductively coupled plasma (ICP) reactors having ICP sources and substrate bias with phase control are provided herein. In some embodiments, a method of operating a first plasma reactor having a source RF generator inductively coupled to the first plasma reactor on one side of a substrate support surface of a substrate support within the first plasma reactor and a bias RF generator coupled to the substrate support on an opposing side of the substrate support surface, wherein the source RF generator and the bias RF generator provide respective RF signals at a common frequency may include selecting a desired value of a process parameter for a substrate to be processed; and adjusting the phase between respective RF signals provided by the source RF generator and the bias RF generator to a desired phase based upon a predetermined relationship between the process parameter and the phase.
摘要翻译：本文提供了具有ICP源和具有相位控制的衬底偏置的电感耦合等离子体（ICP）反应器的方法。在一些实施例中，一种操作第一等离子体反应器的方法，该等离子体反应器具有在第一等离子体反应器内的衬底支撑体的衬底支撑表面的一侧感应耦合到第一等离子体反应器的源RF发生器和耦合到衬底的偏置RF发生器支撑在衬底支撑表面的相对侧上，其中源RF发生器和偏置RF发生器以公共频率提供相应的RF信号可以包括为要处理的衬底选择期望值的工艺参数; 以及基于所述过程参数和所述相位之间的预定关系，将源RF发生器和所述偏置RF发生器提供的相应RF信号之间的相位调整到期望的相位。

6. 发明申请

US20120305185A1 APPARATUS AND METHODS FOR DRY ETCH WITH EDGE, SIDE AND BACK PROTECTION 审中-公开
标题翻译：具有边缘，侧面和背面保护的干燥蚀刻的装置和方法
公开(公告)号：US20120305185A1
公开(公告)日：2012-12-06
申请号：US13455347
申请日：2012-04-25
申请人： Saravjeet Singh , Graeme Jamieson Scott , Amitabh Sabharwal , Ajay Kumar
发明人： Saravjeet Singh , Graeme Jamieson Scott , Amitabh Sabharwal , Ajay Kumar
IPC分类号： B05C9/00 , B05C11/02
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/32477 , H01J37/32623 , H01J37/32642 , H01J37/32651
摘要： Embodiments of the present invention generally relate to a method and apparatus for plasma etching substrates and, more specifically, to a method and apparatus with protection for edges, sides and backs of the substrates being processed. Embodiments of the present invention provide an edge protection plate with an aperture smaller in size than a substrate being processed, wherein the edge protection plate may be positioned in close proximity to the substrate in a plasma chamber. The edge protection plate overlaps edges and/or sides on the substrate to provide protection to reflective coatings on the edge, sides, and back of the substrate.
摘要翻译：本发明的实施例一般涉及用于等离子体蚀刻基板的方法和装置，更具体地说，涉及一种对被处理的基板的边缘，侧面和背面进行保护的方法和装置。本发明的实施例提供了一种边缘保护板，该边缘保护板的尺寸小于被加工的基板，其中边缘保护板可以位于等离子体室中靠近基板的位置。边缘保护板与基板上的边缘和/或侧面重叠以对基板的边缘，侧面和背面上的反射涂层提供保护。

7. 发明申请

US20110162797A1 METHOD AND APPARATUS FOR PHOTOMASK PLASMA ETCHING 有权
标题翻译：用于光电子等离子体蚀刻的方法和装置
公开(公告)号：US20110162797A1
公开(公告)日：2011-07-07
申请号：US13045239
申请日：2011-03-10
申请人： Ajay Kumar , Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Amitabh Sabharwal , Sheeba J. Panayil , Alan Hiroshi Ouye
发明人： Ajay Kumar , Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Amitabh Sabharwal , Sheeba J. Panayil , Alan Hiroshi Ouye
IPC分类号： C23F1/08
CPC分类号： H01J37/32422 , H01J37/3244 , H01J37/32449
摘要： A method and apparatus for etching photomasks is provided herein. In one embodiment, the apparatus comprises a process chamber having a support pedestal adapted for receiving a photomask. An ion-neutral shield is disposed above the pedestal and a deflector plate assembly is provided above the ion-neutral shield. The deflector plate assembly defines a gas flow direction for process gases towards the ion-neutral shield, while the ion-neutral shield is used to establish a desired distribution of ion and neutral species in a plasma for etching the photomask.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。在一个实施例中，该装置包括具有适于接收光掩模的支撑基座的处理室。离子中性屏蔽设置在基座上方，偏转板组件设置在离子中性屏蔽层上方。导流板组件限定了朝向离子中性屏蔽的工艺气体的气体流动方向，而离子中性屏蔽用于建立用于蚀刻光掩模的等离子体中的离子和中性物质的期望分布。

8. 发明授权

US07909961B2 Method and apparatus for photomask plasma etching 有权
标题翻译：光掩模等离子体蚀刻的方法和装置
公开(公告)号：US07909961B2
公开(公告)日：2011-03-22
申请号：US11554495
申请日：2006-10-30
申请人： Ajay Kumar , Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Amitabh Sabharwal , Sheeba J. Panayil , Alan Hiroshi Ouye
发明人： Ajay Kumar , Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Amitabh Sabharwal , Sheeba J. Panayil , Alan Hiroshi Ouye
IPC分类号： C23C16/00 , C23F1/00 , H01L21/00
CPC分类号： C23F4/00 , G03F1/80 , H01J37/321 , H01J37/32422
摘要： A method and apparatus for etching photomasks are provided herein. The apparatus includes a process chamber with a shield above a substrate support. The shield comprises a plate with apertures, and the plate has two zones with at least one characteristic, such as material or potential bias, that is different from each other. The method provides for etching a photomask substrate with a distribution of ions and neutral species that pass through the shield.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。该装置包括在衬底支架上方具有屏蔽的处理室。屏蔽包括具有孔的板，并且该板具有两个彼此不同的至少一个特性，例如材料或电位偏置的区域。该方法提供了通过穿过屏蔽的离子和中性物质的分布来蚀刻光掩模衬底。

9. 发明申请

US20100028813A1 BACKSIDE CLEANING OF SUBSTRATE 审中-公开
标题翻译：基板的背面清洁
公开(公告)号：US20100028813A1
公开(公告)日：2010-02-04
申请号：US12185595
申请日：2008-08-04
申请人： Banqiu Wu , Ajay Kumar , Amitabh Sabharwal , Roman Gouk , James S. Papanu
发明人： Banqiu Wu , Ajay Kumar , Amitabh Sabharwal , Roman Gouk , James S. Papanu
IPC分类号： G03F7/20 , B08B13/00 , B08B7/00 , B08B3/12
CPC分类号： G03F1/82 , G03F1/44 , G03F1/64
摘要： A pellicle cover, system, and method for cleaning a photomask are disclosed. A pellicle cover is disposed over a photomask and pellicle without damaging the markings surrounding the mask pattern area. The pellicle cover can be practicably implemented in an improved photomask cleaning system and process in which the backside of the photomask may be cleaned without removing the pellicle from the patterned surface.
摘要翻译：公开了一种用于清洁光掩模的防护薄膜组件盖，系统和方法。防护薄膜组件设置在光掩模和防护薄膜组件上，而不会损坏围绕图案区域的标记。防护薄膜组件盖可以在改进的光掩模清洁系统和其中可以清洁光掩模的背面而不从图案化表面去除防护薄膜的工艺实现。

10. 发明申请

US20140154615A1 METHOD FOR ETCHING EUV MATERIAL LAYERS UTILIZED TO FORM A PHOTOMASK 有权
标题翻译：用于蚀刻用于形成光电子的EUV材料层的方法
公开(公告)号：US20140154615A1
公开(公告)日：2014-06-05
申请号：US13750888
申请日：2013-01-25
申请人： Keven Yu , Medhavi Chandrachood , Amitabh Sabharwal , Ajay Kumar
发明人： Keven Yu , Medhavi Chandrachood , Amitabh Sabharwal , Ajay Kumar
IPC分类号： G03F1/00
CPC分类号： G03F1/00 , G03F1/22 , G03F1/80
摘要： A method and apparatus for etching photomasks are provided herein. In one embodiment, a method of etching an ARC layer or an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having an ARC layer or an absorber layer partially exposed through a patterned layer, providing a gas mixture including at least one fluorine containing gas in to a processing chamber, applying a source RF power to form a plasma from the gas mixture, applying a first type of RF bias power to the substrate for a first period of time, applying a second type of RF bias power away from the substrate for a second period of time, and etching the ARC layer or the absorber layer through the patterned layer in the presence of the plasma.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。在一个实施例中，蚀刻设置在光掩模上的ARC层或吸收层的方法包括将膜堆叠转移到蚀刻室中，该膜堆具有通过图案化层局部暴露的ARC层或吸收层，提供气体将包含至少一种含氟气体的混合物加入到处理室中，施加源RF功率以从气体混合物形成等离子体，将第一类型的RF偏置功率施加到衬底上第一时间段，施加第二类型的RF偏置功率远离衬底持续第二段时间，并且在存在等离子体的情况下通过图案化层蚀刻ARC层或吸收层。

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