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1. 发明申请

US20090170305A1 METHOD FOR IMPROVING ELECTROMIGRATION LIFETIME FOR CU INTERCONNECT SYSTEMS 审中-公开
标题翻译：改进CU互连系统电寿命的方法
公开(公告)号：US20090170305A1
公开(公告)日：2009-07-02
申请号：US12047485
申请日：2008-03-13
申请人： Jeffrey A. West , Richard A. Faust , Srinivasa Raghavan
发明人： Jeffrey A. West , Richard A. Faust , Srinivasa Raghavan
IPC分类号： H01L21/4763
CPC分类号： H01L21/76886 , H01L21/76808 , H01L21/76834 , H01L21/76883
摘要： A method for forming a single damascene and/or dual damascene interconnect structure, comprising: performing front end processing, depositing copper, annealing the copper, performing CMP planarization, performing a post copper CMP clean process, performing a BTA rinse, performing IPA drying process, performing doping during thermal ramp up and performing remaining back end processing.
摘要翻译：一种用于形成单个镶嵌和/或双镶嵌互连结构的方法，包括：执行前端处理，沉积铜，退火铜，执行CMP平坦化，执行后铜CMP清洁工艺，进行BTA漂洗，进行IPA干燥过程在加热过程中进行掺杂并执行剩余的后端处理。

2. 发明授权

US08378701B2 Non-contact determination of joint integrity between a TSV die and a package substrate 有权
标题翻译： TSV管芯与封装衬底之间的接头完整性的非接触式确定
公开(公告)号：US08378701B2
公开(公告)日：2013-02-19
申请号：US12895140
申请日：2010-09-30
申请人： Jeffrey A. West
发明人： Jeffrey A. West
IPC分类号： G01R31/305
CPC分类号： H01L22/14 , G01R31/307 , H01L2924/0002 , H01L2924/00
摘要： A non-contact voltage contrast (VC) method of determining TSV joint integrity after partial assembly. A TSV die is provided including TSVs that extend from a frontside of the TSV die to TSV tips on a bottomside of the TSV die. At least some TSVs (contacting TSVs) are attached to pads on a top surface of a multilayer (ML) package substrate. The ML package substrate is on a substrate carrier that blocks electrical access to the frontside of the TSV die. Two or more nets including groups of contacting TSVs are tied common within the ML substrate. A charged particle reference beam is directed to a selected TSV within a first net and a charged particle primary beam is then rastered across the TSVs in the first net. VC signals emitted are detected, and joint integrity for the contacting TSVs to pads of the ML package substrate is determined from the VC signals.
摘要翻译：部分组装后，确定TSV接头完整性的非接触电压对比（VC）方法。提供TSV管芯，其包括从TSV管芯前端延伸到TSV管芯底部的TSV端头的TSV。至少一些TSV（接触TSV）附着到多层（ML）封装衬底的顶表面上的焊盘。 ML封装衬底位于衬底载体上，阻挡电接入TSV管芯的前端。两个或更多个网络，包括接触TSV的组在ML衬底内是共同的。带电粒子参考光束被引导到第一网络内的所选择的TSV，然后，带电粒子主波束跨越第一网络中的TSV进行扫描。检测到发出的VC信号，并根据VC信号确定接触TSV到ML封装衬底的焊盘的接合完整性。

3. 发明授权

US07309651B2 Method for improving reliability of copper interconnects 有权
标题翻译：提高铜互连可靠性的方法
公开(公告)号：US07309651B2
公开(公告)日：2007-12-18
申请号：US10697137
申请日：2003-10-30
申请人： Jeffrey A. West , Michael D. Barth , Steven P. Zuhoski
发明人： Jeffrey A. West , Michael D. Barth , Steven P. Zuhoski
IPC分类号： H01L21/44
CPC分类号： H01L23/53238 , H01L21/76886 , H01L2924/0002 , H01L2924/00
摘要： Doping copper interconnects (100) with silicon (115) has been shown to improve Electromigration and Via Stress Migration reliability. After copper (118) is deposited by electrochemical deposition and chemically-mechanically polished back, doping is achieved by flowing SiH4 over the copper interconnect (100) for 0.5 to 5 seconds at a temperature of 325-425° C.
摘要翻译：已经显示具有硅（115）的掺杂铜互连（100）可以改善电迁移和通过应力迁移的可靠性。在通过电化学沉积和化学机械抛光沉积铜（118）之后，通过在325-425℃的温度下将SiH 4 Si覆盖在铜互连（100）上0.5至5秒来实现掺杂 C。

4. 发明授权

US07265560B2 Temperature compensated vapor sensor 有权
公开(公告)号：US07265560B2
公开(公告)日：2007-09-04
申请号：US11286985
申请日：2005-11-23
申请人： Jeffrey A. West , Jared Starling
发明人： Jeffrey A. West , Jared Starling
IPC分类号： G01N27/04 , G01R27/08
CPC分类号： G01N27/122 , G01N33/0031 , G01N33/0063
摘要： A chemiresistor sensor system that compensates for changes in resistance caused by changes in ambient temperature, thereby increasing the accuracy of the sensor system's ability to detect target analytes. The sensor system generally includes a first resistor, a second resistor, and a load regulator or switch that is sensitive to changes in ambient temperature. At least one of the first resistor and the second resistor is a sensing element having a resistance that changes in response to the presence of one or more of the analytes. The switch manages an electrical load across the first resistor and the second resistor. The switch prevents passage of the electrical load across the first and/or second resistor when the ambient temperature is at a first value. The switch permits passage of the electrical load across the first and/or second resistor when the ambient temperature is at a second value.

5. 发明授权

US06197220B1 Conductive polymer compositions containing fibrillated fibers and devices 有权
标题翻译：包含原纤化纤维和装置的导电聚合物组合物
公开(公告)号：US06197220B1
公开(公告)日：2001-03-06
申请号：US09588337
申请日：2000-06-06
申请人： Edward J Blok , Prasad Khadkikar , Jeffrey A. West , Mark R. Scoular , Joseph V. Rumler
发明人： Edward J Blok , Prasad Khadkikar , Jeffrey A. West , Mark R. Scoular , Joseph V. Rumler
IPC分类号： H01B124
CPC分类号： H01C7/028 , H01C7/027
摘要： The invention provides polymeric PTC compositions and electrical PTC devices with higher voltage capability and improved electrical stability. Depending on device design, the composition can be used in low to high voltage applications 6 volts up to 240 volts.
摘要翻译：本发明提供了具有更高电压能力和改善的电稳定性的聚合物PTC组合物和电气PTC装置。根据设备设计，组合可用于6伏至240伏特的低至高电压应用。

6. 发明授权

US4584490A Input circuit for providing discharge path to enhance operation of switching transistor circuits 失效
标题翻译：用于提供放电路径以增强开关晶体管电路的操作的输入电路
公开(公告)号：US4584490A
公开(公告)日：1986-04-22
申请号：US595061
申请日：1984-03-30
申请人： Jeffrey A. West
发明人： Jeffrey A. West
IPC分类号： H03K19/013 , H03K19/018 , H03K19/088 , H03K17/04 , H03K17/60
CPC分类号： H03K19/0136 , H03K19/088
摘要： A bipolar input circuit for regulating the current/voltage level at the base of a switching transistor (QA) provides a capacitively-controlled discharge path from the base through a discharge transistor (QC) when an input signal (V.sub.I) makes certain voltage transitions. The base of the switching transistor responds to the voltage at an emitter (E1) of an input transistor (QB) which has another emitter (E2) coupled to the base of the discharge transistor. Its base is further coupled to a capacitor (C) which controls the discharge path.
摘要翻译：用于调节开关晶体管（QA）基极处的电流/电压电平的双极性输入电路当输入信号（VI）产生一定的电压转换时，提供从基极通过放电晶体管（QC）的电容控制放电路径。开关晶体管的基极响应于具有耦合到放电晶体管的基极的另一发射极（E2）的输入晶体管（QB）的发射极（E1）处的电压。其基极还耦合到控制放电路径的电容器（C）。

7. 发明授权

US08299612B2 IC devices having TSVS including protruding tips having IMC blocking tip ends 有权
标题翻译：具有TSVS的IC器件包括具有IMC阻塞末端的突出尖端
公开(公告)号：US08299612B2
公开(公告)日：2012-10-30
申请号：US13232682
申请日：2011-09-14
申请人： Jeffrey A. West , Young-Joon Park
发明人： Jeffrey A. West , Young-Joon Park
IPC分类号： H01L23/48 , H01L23/52 , H01L23/40
CPC分类号： H01L23/481 , H01L24/05 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L2224/0401 , H01L2224/05009 , H01L2224/05025 , H01L2224/05073 , H01L2224/05082 , H01L2224/05562 , H01L2224/0557 , H01L2224/05573 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/06181 , H01L2224/08503 , H01L2224/13025 , H01L2224/13082 , H01L2224/13083 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/16145 , H01L2224/16146 , H01L2224/16503 , H01L2224/81193 , H01L2224/81411 , H01L2224/81447 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2224/05552
摘要： A through substrate via (TSV) die includes a plurality of TSVs including an outer dielectric sleeve, an inner metal core and protruding TSV tips including sidewalls that emerge from the TSV die. A passivation layer lateral to protruding TSV tips is on a portion of the sidewalls of protruding TSV tips. The passivation layers is absent from a distal portion of protruding TSV tips to provide an exposed portion of the inner metal core. The TSV tips include bulbous distal tip ends which cover a portion of the TSV sidewalls, are over a topmost surface of the outer dielectric sleeve, and have a maximum cross sectional area that is ≧25% more as compared to a cross sectional area of the protruding TSV tips below the bulbous distal tip ends.
摘要翻译：贯穿衬底通孔（TSV）管芯包括多个TSV，其包括外部电介质套管，内部金属芯和包括从TSV管芯出现的侧壁的突出的TSV尖端。突出的TSV尖端的钝化层位于突出的TSV尖端的侧壁的一部分上。钝化层从突出的TSV尖端的远端部分不存在，以提供内金属芯的暴露部分。 TSV尖端包括覆盖TSV侧壁的一部分的球茎远端尖端在外电介质套筒的最上表面上方，并且具有比截面面积大25％的最大横截面积突出的TSV尖端在球茎远端尖端下方。

8. 发明申请

US20120235296A1 IC DEVICES HAVING TSVS INCLUDING PROTRUDING TIPS HAVING IMC BLOCKING TIP ENDS 有权
标题翻译：具有TSVS的IC设备，包括具有IMC阻塞提示端的提示
公开(公告)号：US20120235296A1
公开(公告)日：2012-09-20
申请号：US13232682
申请日：2011-09-14
申请人： Jeffrey A. West , Young-Joon Park
发明人： Jeffrey A. West , Young-Joon Park
IPC分类号： H01L23/48
CPC分类号： H01L23/481 , H01L24/05 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L2224/0401 , H01L2224/05009 , H01L2224/05025 , H01L2224/05073 , H01L2224/05082 , H01L2224/05562 , H01L2224/0557 , H01L2224/05573 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/06181 , H01L2224/08503 , H01L2224/13025 , H01L2224/13082 , H01L2224/13083 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/16145 , H01L2224/16146 , H01L2224/16503 , H01L2224/81193 , H01L2224/81411 , H01L2224/81447 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2224/05552
摘要： A through substrate via (TSV) die includes a plurality of TSVs including an outer dielectric sleeve, an inner metal core and protruding TSV tips including sidewalls that emerge from the TSV die. A passivation layer lateral to protruding TSV tips is on a portion of the sidewalls of protruding TSV tips. The passivation layers is absent from a distal portion of protruding TSV tips to provide an exposed portion of the inner metal core. The TSV tips include bulbous distal tip ends which cover a portion of the TSV sidewalls, are over a topmost surface of the outer dielectric sleeve, and have a maximum cross sectional area that is ≧25% more as compared to a cross sectional area of the protruding TSV tips below the bulbous distal tip ends.
摘要翻译：贯穿衬底通孔（TSV）管芯包括多个TSV，其包括外部电介质套管，内部金属芯和包括从TSV管芯出现的侧壁的突出的TSV尖端。突出的TSV尖端的钝化层位于突出的TSV尖端的侧壁的一部分上。钝化层从突出的TSV尖端的远端部分不存在，以提供内金属芯的暴露部分。 TSV尖端包括覆盖TSV侧壁的一部分的球茎远端尖端在外电介质套筒的最上表面上方，并且具有比截面面积大25％的最大横截面积突出的TSV尖端在球茎远端尖端下方。

9. 发明授权

US08039385B1 IC devices having TSVS including protruding tips having IMC blocking tip ends 有权
标题翻译：具有TSVS的IC器件包括具有IMC阻塞末端的突出尖端
公开(公告)号：US08039385B1
公开(公告)日：2011-10-18
申请号：US12880629
申请日：2010-09-13
申请人： Jeffrey A. West , Young-Joon Park
发明人： Jeffrey A. West , Young-Joon Park
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L23/481 , H01L24/05 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L2224/0401 , H01L2224/05009 , H01L2224/05025 , H01L2224/05073 , H01L2224/05082 , H01L2224/05562 , H01L2224/0557 , H01L2224/05573 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/06181 , H01L2224/08503 , H01L2224/13025 , H01L2224/13082 , H01L2224/13083 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/16145 , H01L2224/16146 , H01L2224/16503 , H01L2224/81193 , H01L2224/81411 , H01L2224/81447 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2224/05552
摘要： A through substrate via (TSV) die includes a plurality of TSVs including an outer dielectric sleeve and an inner metal core and protruding TSV tips including sidewalls that emerge from the TSV die. A passivation layer lateral to the protruding TSV tips is on a portion of the sidewalls of the protruding TSV tips. The passivation layers is absent from a distal portion of the protruding TSV tips to provide an exposed portion of the inner metal core. The TSV tips include bulbous distal tip ends including a first metal layer including a first metal other than solder and a second metal layer including a second metal other than solder that covers the exposed tip portion. The bulbous distal tip ends cover a portion of the TSV sidewalls and are over a topmost surface of the outer dielectric sleeve, and have a maximum cross sectional area that is ≧25% more as compared to a cross sectional area of the protruding TSV tips below the bulbous distal tip ends.
摘要翻译：贯穿衬底通孔（TSV）管芯包括多个TSV，其包括外部电介质套筒和内部金属芯体，以及突出的TSV端部，其包括从TSV管芯出来的侧壁。突出的TSV尖端侧面的钝化层位于突出的TSV尖端的侧壁的一部分上。钝化层不存在于突出的TSV尖端的远端部分，以提供内金属芯的暴露部分。 TSV尖端包括球茎远端尖端，其包括包括除焊料之外的第一金属的第一金属层和包括除了暴露的尖端部分的焊料以外的第二金属的第二金属层。球茎远侧末端覆盖TSV侧壁的一部分并且在外部电介质套管的最上表面之上，并且与下面突出的TSV尖端的横截面面积相比，具有最大横截面面积比≧25％更大球茎远端尖端。

10. 发明申请

US20100193918A1 EMBEDDED SCRIBE LANE CRACK ARREST STRUCTURE FOR IMPROVED IC PACKAGE RELIABILITY OF PLASTIC FLIP CHIP DEVICES 有权
标题翻译：嵌入式SCRESE LANE CRIS ARREST结构改进IC封装可塑性FLIP芯片设备的可靠性
公开(公告)号：US20100193918A1
公开(公告)日：2010-08-05
申请号：US12365333
申请日：2009-02-04
申请人： Jeffrey A. West , Patricia Diane Vincent , Robert A. Tuerck
发明人： Jeffrey A. West , Patricia Diane Vincent , Robert A. Tuerck
IPC分类号： H01L23/00 , H01L21/02
CPC分类号： H01L23/562 , H01L21/78 , H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： A system, method, and apparatus for suppressing cracks in the wafer dicing process. A wafer includes a plurality of die attached to a frame and mounting tape, with the die separated by a plurality of scribe lanes. An existing die seal generally protects the boundary of the die but can still fail to fully protect the die from excessive cracks induced by dicing damage, particularly when dicing through brittle, low-k dielectrics. The system, method, and apparatus includes embedding a crack arrest structure (CAS) between adjacent scribe lanes. Upon a mechanical saw dicing the wafer, the CAS creates a moisture diffusion block, and can absorb or significantly diminish the energy of cracks propagating towards the individual die seals. Furthermore, the system, method, and apparatus can be implemented without the need to increase the width of the scribe lanes.
摘要翻译：一种用于抑制晶片切割工艺中的裂纹的系统，方法和装置。晶片包括附接到框架和安装带的多个模具，其中模具被多个划线段隔开。现有的模具密封件通常保护模具的边界，但是仍然不能完全保护模具免受切割损伤引起的过度裂纹，特别是当通过脆性低k电介质切割时。系统，方法和装置包括在相邻划线之间嵌入裂纹停止结构（CAS）。当机械锯切割晶片时，CAS产生湿气扩散块，并且可以吸收或显着地减少朝着各个模具密封件传播的裂纹的能量。此外，可以实现系统，方法和装置，而不需要增加划线的宽度。

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