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1. 发明授权

US10192968B2 Semiconductor devices having gate structures with skirt regions 有权
公开(公告)号：US10192968B2
公开(公告)日：2019-01-29
申请号：US14988819
申请日：2016-01-06
申请人： Jung-Gun You , Myung-Yoon Um , Young-Joon Park , Jeong-Hyo Lee , Ji-Yong Ha , Jun-Sun Hwang
发明人： Jung-Gun You , Myung-Yoon Um , Young-Joon Park , Jeong-Hyo Lee , Ji-Yong Ha , Jun-Sun Hwang
IPC分类号： H01L29/423 , H01L29/78 , H01L21/28 , H01L29/40 , H01L29/66 , H01L21/762 , H01L21/8234 , H01L29/49
摘要： Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.

2. 发明授权

US09468561B2 Medical dressing and method for making the same 有权
标题翻译：医疗敷料和制作方法
公开(公告)号：US09468561B2
公开(公告)日：2016-10-18
申请号：US14016301
申请日：2013-09-03
申请人： Ji Hye Park , Young Joon Park
发明人： Ji Hye Park
IPC分类号： A61L15/58 , A61F13/02 , B32B38/00 , B32B37/26
CPC分类号： A61F13/0266 , A61F13/0259 , B32B37/26 , B32B38/0004 , B32B2037/268 , B32B2556/00 , Y10T156/1082
摘要： A medical dressing is used to dress and treat skin wounds such as burns, cuts or traumatic injuries, and a method for making the same. The medical dressing includes an auxiliary release paper which makes it convenient to separate a pressure sensitive adhesive sheet from a release paper and is very easily separated from the pressure sensitive adhesive sheet after application to a wound site, thus improving the convenience of use of the dressing, and prevents the contamination of the pressure sensitive adhesive sheet in the process of either separating the pressure sensitive adhesive sheet from the release paper or separating the auxiliary release paper, thus preventing the secondary bacterial infection of a wound site, and is not exposed to the outside so that the dressing has an improved appearance and is convenient to carry and store.
摘要翻译：使用医用敷料来穿戴和治疗诸如烧伤，切割或创伤性损伤的皮肤伤口及其制造方法。医用敷料包括辅助剥离纸，其可以方便地将剥离纸分离出压敏粘合片，并且在施加到伤口部位之后非常容易地与压敏粘合片分离，从而改善敷料的使用方便性，并且在将压敏粘合片从剥离纸分离或分离辅助剥离纸的过程中防止压敏粘合片的污染，从而防止伤口部位的二次细菌感染，并且不暴露于使敷料外观改善，携带方便。

3. 发明申请

US20110080175A1 ELECTROMIGRATION COMPENSATION SYSTEM 有权
标题翻译：电气补偿系统
公开(公告)号：US20110080175A1
公开(公告)日：2011-04-07
申请号：US12900464
申请日：2010-10-07
申请人： PALKESH JAIN , YOUNG-JOON PARK
发明人： PALKESH JAIN , YOUNG-JOON PARK
IPC分类号： G01N27/62
CPC分类号： G06F17/5081 , G06F2217/82 , H01L23/528 , H01L2924/0002 , H05K3/0005 , H01L2924/00
摘要： An integrated circuit is described. The integrated circuit, comprising: a central processor; a memory; and an electromigration compensation system associated with a plurality of leads within the integrated circuit, wherein the electromigration compensation system causes the plurality of leads to have interlocking, horizontally tapered ends that substantially reduces electromigration divergence and consequently lead resistance and circuit shorting.
摘要翻译：描述了集成电路。该集成电路包括：中央处理器; 记忆以及与所述集成电路内的多个引线相关联的电迁移补偿系统，其中所述电迁移补偿系统使得所述多个引线具有互锁的水平渐缩的端部，其大大减小了电迁移发散，并因此导致引线电阻和电路短路。

4. 发明授权

US07306260B1 Lap fuse belt for a seat belt 有权
标题翻译：用于安全带的保险丝圈
公开(公告)号：US07306260B1
公开(公告)日：2007-12-11
申请号：US11606195
申请日：2006-11-28
申请人： Young Joon Park
发明人： Young Joon Park
IPC分类号： B60R22/00
CPC分类号： B60R22/16
摘要： The present invention relates to a lap fuse belt for a seat belt. A lap fuse belt for a seat belt includes a plurality of lap fuse belt cases which are coupled to one another by receiving holes and coupling projections formed on surfaces thereof so as to house the lap fuse belt. The lap fuse belt reduces injuries on an occupant by dispersing impact.
摘要翻译：本发明涉及一种用于安全带的搭接保险丝带。用于座椅安全带的搭接保险丝带包括多个搭接保险丝盒壳体，它们通过容纳孔和形成在其表面上的联接突起而相互联接，以容纳搭接熔丝带。搭接保险丝带通过分散撞击减少乘员受伤。

5. 发明授权

US07122466B2 Two step semiconductor manufacturing process for copper interconnects 有权
标题翻译：铜互连的两步半导体制造工艺
公开(公告)号：US07122466B2
公开(公告)日：2006-10-17
申请号：US10628198
申请日：2003-07-28
申请人： Young-Joon Park , Srikanth Krishnan
发明人： Young-Joon Park , Srikanth Krishnan
IPC分类号： H01L21/4763 , C25D15/00
CPC分类号： H01L23/53238 , H01L21/2885 , H01L21/76877 , H01L2924/0002 , H01L2924/00
摘要： An embodiment of the invention is a method of manufacturing copper interconnects 30 on a semiconductor wafer 10 where an electroplating process is used to deposit a first layer of copper grains 30d having an initial grain size and a second layer of copper grains 30e having a different initial grain size.
摘要翻译：本发明的一个实施例是在半导体晶片10上制造铜互连30的方法，其中使用电镀工艺沉积具有初始晶粒尺寸的第一层铜颗粒30d和具有初始晶粒尺寸的第二层铜颗粒30e，不同的初始粒度。

6. 发明申请

US20160204264A1 SEMICONDUCTOR DEVICES HAVING GATE STRUCTURES WITH SKIRT REGIONS 审中-公开
标题翻译：具有裙带结构的半导体器件
公开(公告)号：US20160204264A1
公开(公告)日：2016-07-14
申请号：US14988819
申请日：2016-01-06
申请人： Jung-Gun You , Myung-Yoon Um , Young-Joon Park , Jeong-Hyo Lee , Ji-Yong Ha , Jun-Sun Hwang
发明人： Jung-Gun You , Myung-Yoon Um , Young-Joon Park , Jeong-Hyo Lee , Ji-Yong Ha , Jun-Sun Hwang
IPC分类号： H01L29/78 , H01L29/423
CPC分类号： H01L29/42376 , H01L21/28088 , H01L21/28114 , H01L21/76224 , H01L21/823431 , H01L21/823481 , H01L29/401 , H01L29/4238 , H01L29/4966 , H01L29/66545 , H01L29/66795 , H01L29/7848 , H01L29/7851 , H01L29/7853
摘要： Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.
摘要翻译：提供一种半导体器件及其制造方法。半导体器件包括从基板向上突出并沿第一方向延伸的有源鳍片和栅极结构，该栅极结构沿与第一方向交叉的第二方向延伸以跨越有源鳍片，其中栅极结构的下部的第一宽度接触有源翅片大于栅极结构的与有源鳍片间隔开的下部的第二宽度。

7. 发明授权

US08438519B2 Via-node-based electromigration rule-check methodology 有权
标题翻译：基于节点的电迁移规则检查方法
公开(公告)号：US08438519B2
公开(公告)日：2013-05-07
申请号：US12041984
申请日：2008-03-04
申请人： Young-Joon Park
发明人： Young-Joon Park
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G06F2217/82
摘要： A method of method of manufacturing an integrated circuit. The method comprises performing an electromigration reliability rule-check for at least one of via node of an integrated circuit, including: calculating a net effective current density of the via node. Calculating the net effective current density including determining a sum of effective current densities for individual leads that are coupled to the via node. Leads configured to transfer electrons away from said via node are assigned a positive polarity of the effective current density. Leads configured to transfer electrons towards the via node are assigned a negative polarity of the effective current density.
摘要翻译：一种制造集成电路的方法。该方法包括对集成电路的通路节点中的至少一个执行电迁移可靠性规则检查，包括：计算通孔节点的净有效电流密度。计算净有效电流密度，包括确定耦合到通孔节点的各个引线的有效电流密度之和。被配置为将电子传送离开所述通孔节点的引线被分配有效电流密度的正极性。被配置为将电子传递到通孔节点的引线被赋予有效电流密度的负极性。

8. 发明申请

US20130002888A1 APPARATUS FOR EDITING MULTIMEDIA INFORMATION AND METHOD THEREOF 审中-公开
标题翻译：用于编辑多媒体信息及其方法的装置
公开(公告)号：US20130002888A1
公开(公告)日：2013-01-03
申请号：US13487695
申请日：2012-06-04
申请人： Soon Ju KOH , Young Joon Park , Pil Sun Heo , Sung Young Jung
发明人： Soon Ju KOH , Young Joon Park , Pil Sun Heo , Sung Young Jung
IPC分类号： H04N5/225
CPC分类号： G06F3/04845 , G06F3/04842 , G06F3/04883 , G06F2203/04806 , H04N1/00251 , H04N1/0044
摘要： Disclosed are an apparatus for editing multimedia information and a method thereof. The apparatus for editing multimedia information in accordance with the exemplary embodiment of the present invention includes: a display unit the displays a document input window for preparing a document including the multimedia information; a control unit that sets an insertion area for inputting images or moving pictures within the document input window according to a request of a user; and a picture photographing unit that photographs the images or the moving pictures to be input to the insertion area by being driven when the insertion area is set, wherein the control unit inputs the photographed images or moving pictures to the insertion area within the document input window.
摘要翻译：公开了一种用于编辑多媒体信息的装置及其方法。根据本发明的示例性实施例的用于编辑多媒体信息的装置包括：显示单元，显示用于准备包括多媒体信息的文档的文档输入窗口; 控制单元，其根据用户的请求设置用于在文档输入窗口内输入图像或运动图像的插入区域; 以及图像拍摄单元，其通过在插入区域被设置时被驱动来拍摄要输入到插入区域的图像或运动图像，其中控制单元将拍摄图像或运动图像输入到文档输入窗口内的插入区域。

9. 发明授权

US08299612B2 IC devices having TSVS including protruding tips having IMC blocking tip ends 有权
标题翻译：具有TSVS的IC器件包括具有IMC阻塞末端的突出尖端
公开(公告)号：US08299612B2
公开(公告)日：2012-10-30
申请号：US13232682
申请日：2011-09-14
申请人： Jeffrey A. West , Young-Joon Park
发明人： Jeffrey A. West , Young-Joon Park
IPC分类号： H01L23/48 , H01L23/52 , H01L23/40
CPC分类号： H01L23/481 , H01L24/05 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L2224/0401 , H01L2224/05009 , H01L2224/05025 , H01L2224/05073 , H01L2224/05082 , H01L2224/05562 , H01L2224/0557 , H01L2224/05573 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/06181 , H01L2224/08503 , H01L2224/13025 , H01L2224/13082 , H01L2224/13083 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/16145 , H01L2224/16146 , H01L2224/16503 , H01L2224/81193 , H01L2224/81411 , H01L2224/81447 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2224/05552
摘要： A through substrate via (TSV) die includes a plurality of TSVs including an outer dielectric sleeve, an inner metal core and protruding TSV tips including sidewalls that emerge from the TSV die. A passivation layer lateral to protruding TSV tips is on a portion of the sidewalls of protruding TSV tips. The passivation layers is absent from a distal portion of protruding TSV tips to provide an exposed portion of the inner metal core. The TSV tips include bulbous distal tip ends which cover a portion of the TSV sidewalls, are over a topmost surface of the outer dielectric sleeve, and have a maximum cross sectional area that is ≧25% more as compared to a cross sectional area of the protruding TSV tips below the bulbous distal tip ends.
摘要翻译：贯穿衬底通孔（TSV）管芯包括多个TSV，其包括外部电介质套管，内部金属芯和包括从TSV管芯出现的侧壁的突出的TSV尖端。突出的TSV尖端的钝化层位于突出的TSV尖端的侧壁的一部分上。钝化层从突出的TSV尖端的远端部分不存在，以提供内金属芯的暴露部分。 TSV尖端包括覆盖TSV侧壁的一部分的球茎远端尖端在外电介质套筒的最上表面上方，并且具有比截面面积大25％的最大横截面积突出的TSV尖端在球茎远端尖端下方。

10. 发明申请

US20120235296A1 IC DEVICES HAVING TSVS INCLUDING PROTRUDING TIPS HAVING IMC BLOCKING TIP ENDS 有权
标题翻译：具有TSVS的IC设备，包括具有IMC阻塞提示端的提示
公开(公告)号：US20120235296A1
公开(公告)日：2012-09-20
申请号：US13232682
申请日：2011-09-14
申请人： Jeffrey A. West , Young-Joon Park
发明人： Jeffrey A. West , Young-Joon Park
IPC分类号： H01L23/48
CPC分类号： H01L23/481 , H01L24/05 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L2224/0401 , H01L2224/05009 , H01L2224/05025 , H01L2224/05073 , H01L2224/05082 , H01L2224/05562 , H01L2224/0557 , H01L2224/05573 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/06181 , H01L2224/08503 , H01L2224/13025 , H01L2224/13082 , H01L2224/13083 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/16145 , H01L2224/16146 , H01L2224/16503 , H01L2224/81193 , H01L2224/81411 , H01L2224/81447 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2224/05552
摘要： A through substrate via (TSV) die includes a plurality of TSVs including an outer dielectric sleeve, an inner metal core and protruding TSV tips including sidewalls that emerge from the TSV die. A passivation layer lateral to protruding TSV tips is on a portion of the sidewalls of protruding TSV tips. The passivation layers is absent from a distal portion of protruding TSV tips to provide an exposed portion of the inner metal core. The TSV tips include bulbous distal tip ends which cover a portion of the TSV sidewalls, are over a topmost surface of the outer dielectric sleeve, and have a maximum cross sectional area that is ≧25% more as compared to a cross sectional area of the protruding TSV tips below the bulbous distal tip ends.
摘要翻译：贯穿衬底通孔（TSV）管芯包括多个TSV，其包括外部电介质套管，内部金属芯和包括从TSV管芯出现的侧壁的突出的TSV尖端。突出的TSV尖端的钝化层位于突出的TSV尖端的侧壁的一部分上。钝化层从突出的TSV尖端的远端部分不存在，以提供内金属芯的暴露部分。 TSV尖端包括覆盖TSV侧壁的一部分的球茎远端尖端在外电介质套筒的最上表面上方，并且具有比截面面积大25％的最大横截面积突出的TSV尖端在球茎远端尖端下方。

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