专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06465306B1 Simultaneous formation of charge storage and bitline to wordline isolation 有权
标题翻译：同时形成电荷存储和位线到字线隔离
公开(公告)号：US06465306B1
公开(公告)日：2002-10-15
申请号：US09723635
申请日：2000-11-28
申请人： Mark T. Ramsbey , Jean Y. Yang , Hidehiko Shiraiwa , Michael A. Van Buskirk , David M. Rogers , Ravi Sunkavalli , Janet Wang , Narbeh Derhacobian , Yider Wu
发明人： Mark T. Ramsbey , Jean Y. Yang , Hidehiko Shiraiwa , Michael A. Van Buskirk , David M. Rogers , Ravi Sunkavalli , Janet Wang , Narbeh Derhacobian , Yider Wu
IPC分类号： H01L21336
CPC分类号： H01L27/11568 , H01L27/105 , H01L27/115 , H01L27/11573 , Y10S438/954 , Y10S438/981
摘要： One aspect of the present invention relates to a method of forming a non-volatile semiconductor memory device, involving the sequential or non-sequential steps of forming a charge trapping dielectric over a substrate, the substrate having a core region and a periphery region; removing at least a portion of the charge trapping dielectric in the periphery region; forming a gate dielectric in the periphery region; forming buried bitlines in the core region; and forming gates in the core region and the periphery region.
摘要翻译：本发明的一个方面涉及一种形成非挥发性半导体存储器件的方法，涉及在衬底上形成电荷俘获电介质的顺序或非顺序步骤，所述衬底具有芯区域和外围区域; 去除外围区域中的电荷捕获电介质的至少一部分; 在周边区域形成栅电介质; 在核心区域形成掩埋位线; 并且在芯区域和周边区域中形成栅极。

2. 发明授权

US06468865B1 Method of simultaneous formation of bitline isolation and periphery oxide 有权
标题翻译：同时形成位线隔离和周边氧化物的方法
公开(公告)号：US06468865B1
公开(公告)日：2002-10-22
申请号：US09723653
申请日：2000-11-28
申请人： Jean Y. Yang , Mark T. Ramsbey , Hidehiko Shiraiwa , Michael A. Van Buskirk , David M. Rogers , Ravi Sunkavalli , Janet Wang , Narbeh Derhacobian , Yider Wu
发明人： Jean Y. Yang , Mark T. Ramsbey , Hidehiko Shiraiwa , Michael A. Van Buskirk , David M. Rogers , Ravi Sunkavalli , Janet Wang , Narbeh Derhacobian , Yider Wu
IPC分类号： H01L21336
CPC分类号： H01L27/11568 , H01L27/115
摘要： One aspect of the present invention relates to a method of forming a non-volatile semiconductor memory device, involving the sequential or non-sequential steps of forming a charge trapping dielectric over a substrate, the substrate having a core region and a periphery region; removing at least a portion of the charge trapping dielectric in the periphery region; forming a gate dielectric in the periphery region; forming buried bitlines in the core region; removing at least a portion of the charge trapping dielectric positioned over the buried bitlines in the core region; forming a bitline isolation over the buried bitlines in the core region; and forming gates in the core region and the periphery region. Another aspect of the present invention relates to increasing the thickness of the gate dielectric in at least a portion of the periphery region simultaneously while forming the bitline isolation.
摘要翻译：本发明的一个方面涉及一种形成非挥发性半导体存储器件的方法，涉及在衬底上形成电荷俘获电介质的顺序或非顺序步骤，所述衬底具有芯区域和外围区域; 去除外围区域中的电荷捕获电介质的至少一部分; 在周边区域形成栅电介质; 在核心区域形成掩埋位线; 去除位于芯区域中的掩埋位线之上的电荷捕获电介质的至少一部分; 在核心区域的掩埋位线上形成位线隔离; 并且在芯区域和周边区域中形成栅极。本发明的另一方面涉及在形成位线隔离的同时在周边区域的至少一部分中增加栅极电介质的厚度。

3. 发明授权

US06555436B2 Simultaneous formation of charge storage and bitline to wordline isolation 失效
公开(公告)号：US06555436B2
公开(公告)日：2003-04-29
申请号：US10223195
申请日：2002-08-19
申请人： Mark T. Ramsbey , Jean Y. Yang , Hidehiko Shiraiwa , Michael A. Van Buskirk , David M. Rogers , Ravi Sunkavalli , Janet Wang , Narbeh Derhacobian , Yider Wu
发明人： Mark T. Ramsbey , Jean Y. Yang , Hidehiko Shiraiwa , Michael A. Van Buskirk , David M. Rogers , Ravi Sunkavalli , Janet Wang , Narbeh Derhacobian , Yider Wu
IPC分类号： H01L21336
CPC分类号： H01L27/11568 , H01L27/105 , H01L27/115 , H01L27/11573 , Y10S438/954 , Y10S438/981
摘要： One aspect of the present invention relates to a method of forming a non-volatile semiconductor memory device, involving the sequential or non-sequential steps of forming a charge trapping dielectric over a substrate, the substrate having a core region and a periphery region; removing at least a portion of the charge trapping dielectric in the periphery region; forming a gate dielectric in the periphery region; forming buried bitlines in the core region; and forming gates in the core region and the periphery region.

4. 发明授权

US06541816B2 Planar structure for non-volatile memory devices 失效
公开(公告)号：US06541816B2
公开(公告)日：2003-04-01
申请号：US09893026
申请日：2001-06-27
申请人： Mark T. Ramsbey , Jean Y. Yang , Hidehiko Shiraiwa , Michael A. Van Buskirk , David M. Rogers , Ravi S. Sunkavalli , Janet S. Wang , Narbeh Derhacobian
发明人： Mark T. Ramsbey , Jean Y. Yang , Hidehiko Shiraiwa , Michael A. Van Buskirk , David M. Rogers , Ravi S. Sunkavalli , Janet S. Wang , Narbeh Derhacobian
IPC分类号： H01L29792
CPC分类号： H01L27/11568 , H01L27/105 , H01L27/115 , H01L27/11573 , Y10S438/954 , Y10S438/981
摘要： One aspect of the present invention relates to a non-volatile semiconductor memory device, containing a substrate, the substrate having a core region and a periphery region; a charge trapping dielectric over the core region of the substrate; a gate dielectric in the periphery region of the substrate; buried bitlines under the charge trapping dielectric in the core region; and wordlines over the charge trapping dielectric in the core region, wherein the core region is substantially planar.

5. 发明申请

US20080151590A1 METHOD AND APPARATUS FOR PROTECTION AGAINST PROCESS-INDUCED CHARGING 有权
标题翻译：用于保护过程诱发电荷的方法和装置
公开(公告)号：US20080151590A1
公开(公告)日：2008-06-26
申请号：US11614053
申请日：2006-12-20
申请人： David M. Rogers , Mimi X. Qian , Kwadwo A. Appiah , Mark Randolph , Michael A. VanBuskirk , Tazrien Kamal , Hiroyuki Kinoshita , Yi He , Wei Zheng
发明人： David M. Rogers , Mimi X. Qian , Kwadwo A. Appiah , Mark Randolph , Michael A. VanBuskirk , Tazrien Kamal , Hiroyuki Kinoshita , Yi He , Wei Zheng
IPC分类号： H01L23/60 , G11C5/00
CPC分类号： H01L21/768 , G11C8/08 , G11C8/14 , H01L27/0248 , H01L29/66477 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device (400) for improved charge dissipation protection includes a substrate (426), a layer of semiconductive or conductive material (406), one or more thin film devices (408) and a charge passage device (414). The thin film devices (408) are connected to the semiconductive or conductive layer (406) and the charge passage device (414) is coupled to the thin film devices (408) and to the substrate (426) and provides a connection from the thin film devices (408) to the substrate (426) to dissipate charge from the semiconductive/conductive layer (406) to the substrate (426).
摘要翻译：用于改善电荷耗散保护的半导体器件（400）包括衬底（426），半导体或导电材料层（406），一个或多个薄膜器件（408）和电荷通道器件（414）。薄膜器件（408）连接到半导体或导电层（406），并且电荷通道器件（414）耦合到薄膜器件（408）和衬底（426），并提供来自薄的薄膜器件（408）到衬底（426）以将电荷从半导体/导电层（406）耗散到衬底（426）。

6. 发明授权

US4780263A Location of jointed textiles in a mold 失效
标题翻译：联合纺织品在模具中的位置
公开(公告)号：US4780263A
公开(公告)日：1988-10-25
申请号：US66011
申请日：1987-06-24
申请人： Howard S. Atkin , David M. Rogers , George S. Wilson
发明人： Howard S. Atkin , David M. Rogers , George S. Wilson
IPC分类号： B29C33/12 , B29C31/00 , B29C51/26 , B29C65/72
CPC分类号： B29C51/26 , B29C31/008
摘要： Accurate and consistent location of jointed textiles within a mold is achieved by inserting the outer surfaces of the joint (12) into the cavity of an elongate, generally U-shaped member (20) and securing the joint to the meter, e.g. by sewing (21). The joint/channel member assembly can then be automatically gripped and placed in the desired position in the mold. The method is of particular application to processes involving vacuum member molding.
摘要翻译：通过将接头（12）的外表面插入细长的大致U形构件（20）的空腔中并将接头固定到仪表（例如）上，实现了模具内的接合纺织品的精确和一致的位置。缝制（21）。然后可以将接头/通道构件组件自动地夹持并放置在模具中的期望位置。该方法特别适用于涉及真空部件成型的工艺。

7. 发明授权

US5596880A Chilled beverage display container 失效
标题翻译：冷藏饮料展示柜
公开(公告)号：US5596880A
公开(公告)日：1997-01-28
申请号：US500435
申请日：1995-07-10
申请人： Brian H. Welker , Mark T. Beeler , David M. Rogers
发明人： Brian H. Welker , Mark T. Beeler , David M. Rogers
IPC分类号： F25D3/06 , F25D31/00 , F25D3/08 , G09F15/00
CPC分类号： F25D3/06 , F25D2303/081 , F25D2331/804 , F25D2331/805 , F25D2331/809 , F25D2400/38 , F25D2500/02 , F25D31/007
摘要： A beverage container adapted to hold ice and beverages separate from water formed from melted ice includes a receptacle having an interior cavity for holding ice and beverages; a float having a density less than water adapted to support the ice and beverages and move upwardly within the cavity as the ice melts; a cover mounted on the receptacle by a hinge having three slots including a recess and an opening at a depth in the recess, and a tubesign base having three tabs having distal ends, lobes on the distal ends and lengths from bases of the tabs to their lobes corresponding to the depth, so as to enable removable attachment of the tubesign base to the hinge by insertion of the tabs in the slots, with the lobes locking the tabs into the slots when inserted therein.
摘要翻译：适于将冰和饮料与熔融冰形成的水分离的饮料容器包括具有用于容纳冰和饮料的内部腔的容器; 具有小于水的浮子，其适于支撑冰和饮料并且随着冰融化而在空腔内向上移动; 通过铰链安装在容器上的盖子，该铰链具有三个槽，包括凹槽和在凹槽中的深度处的开口;以及管状基座，其具有三个突出部，其具有远端，远端的凸角和从突出部的基部相应于深度的裂片，以便能够通过将突出部插入狭槽中来将管状基座可拆卸地附接到铰链，当突出部插入其中时，突片将突片锁定到槽中。

8. 发明授权

US4208517A Caphalosporin compounds having at position-7 an .alpha.-etherified hydroxyiminoarylacetamido group 失效
标题翻译：在位置-7处具有α-乙酰化羟基亚氨基芳基乙酰胺基的咖啡糊精化合物
公开(公告)号：US4208517A
公开(公告)日：1980-06-17
申请号：US855080
申请日：1977-11-28
申请人： Michael W. Foxton , Gordon I. Gregory , David M. Rogers
发明人： Michael W. Foxton , Gordon I. Gregory , David M. Rogers
IPC分类号： C07D307/54 , C07D501/32 , C07D501/34 , A61K31/545
CPC分类号： C07D307/54
摘要： Antibiotic compounds of the general formula ##STR1## [wherein R is a phenyl, thienyl or furyl group; R.sup.a and R.sup.b, which may be the same or different, are each selected from hydrogen, C.sub.1-4 alkyl, C.sub.2-4 alkenyl, C.sub.3-7 cycloalkyl, phenyl, naphthyl, thienyl, furyl, carboxy, C.sub.2-5 alkoxycarbonyl and cyano, or R.sup.a and R.sup.b together wth the carbon atom to which they are attached form a C.sub.3-7 cycloalkylidene or cycloalkenylidene group; R.sup.c and R.sup.d, which may be the same or different, each represents a hydrogen atom or a substituting group e.g. an alkyl group or substituted alkyl group; or R.sup.c and R.sup.d together with the nitrogen atom to which they are attached form a saturated or unsaturated heterocyclic ring which contains 5-7 ring members and which may contain additional hetero atoms, and may be substituted by lower alkyl; R.sup.e represents hydrogen or C.sub.1-4 alkyl; m and n are each 0 or 1 such that the sum of m and n is 0 or 1 and Y is selected from various oxygen and sulphur nucleophiles] and non-toxic derivatives thereof.
摘要翻译：通式（I）的抗生素化合物[其中R是苯基，噻吩基或呋喃基; R a和R b可以相同或不同，各自选自氢，C 1-4烷基，C 2-4烯基，C 3-7环烷基，苯基，萘基，噻吩基，呋喃基，羧基，C 2-5烷氧基羰基和氰基，或者R a和R b一起与它们所连接的碳原子一起形成C 3-7亚环烷基或亚环烯基; R c和R d可以相同或不同，表示氢原子或取代基团。烷基或取代的烷基; 或Rc和Rd与它们所连接的氮原子一起形成饱和或不饱和的杂环，其含有5-7个环成员并且可以含有另外的杂原子，并且可以被低级烷基取代; Re表示氢或C 1-4烷基; m和n各自为0或1，使得m和n的和为0或1，Y选自各种氧和硫亲核试剂]及其无毒的衍生物。

9. 发明授权

US4385177A Cephalosporins having a carbamoylalkoxyiminoarylacetamido group at 7-position 失效
标题翻译：在7位具有氨基甲酰基烷氧基亚氨基乙酰胺基的头孢菌素
公开(公告)号：US4385177A
公开(公告)日：1983-05-24
申请号：US124109
申请日：1980-02-25
申请人： Michael W. Foxton , Gordon I. Gregory , David M. Rogers
发明人： Michael W. Foxton , Gordon I. Gregory , David M. Rogers
IPC分类号： A61K31/545 , A61K31/546 , A61P31/04 , C07D307/54 , C07D333/24 , C07D501/20 , C07D501/34 , C07D501/56
CPC分类号： C07D307/54 , C07D333/24
摘要： Antibiotic compounds of the general formula ##STR1## [wherein R is a phenyl, thienyl or furyl group; R.sup.a and R.sup.b, which may be the same or different, are each selected from hydrogen, C.sub.1-4 alkyl, C.sub.2-4 alkenyl C.sub.3-7 cycloalkyl, phenyl, naphthyl, thienyl, furyl, carboxy, C.sub.2-5 alkoxycarbonyl and cyano, or R.sup.a and R.sup.b together with the carbon atom to which they are attached from a C.sub.3-7 cycloalkylidene or cycloalkenylidene group; R.sup.c is hydrogen or lower alkyl; R.sup.d is hydroxy, lower alkoxy, aralkoxy or aryloxy; m and n are each 0 or 1 such that the sum of m and n is 0 or 1; and P is selected from a hydrogen atom, a halogen atom and various organic groups] and non-toxic derivatives thereof.
摘要翻译：通式（I）的抗生素化合物[其中R是苯基，噻吩基或呋喃基; R a和R b可以相同或不同，各自选自氢，C 1-4烷基，C 2-4烯基C 3-7环烷基，苯基，萘基，噻吩基，呋喃基，羧基，C 2-5烷氧基羰基和氰基，或 R a和R b与它们所连接的碳原子一起为C3-7亚环烷基或环亚烯基; Rc是氢或低级烷基; Rd为羟基，低级烷氧基，芳烷氧基或芳氧基; m和n各自为0或1，使得m和n的和为0或1; 和P选自氢原子，卤素原子和各种有机基团]及其无毒的衍生物。

10. 发明授权

US4074047A 7 2-(Aminocarbonylalkoxyimino)acetamido! derivatives of cephalosporin 失效
标题翻译： 7 {8 2-（氨基羰基烷氧基亚氨基）乙酰氨基{9 {头孢菌素衍生物
公开(公告)号：US4074047A
公开(公告)日：1978-02-14
申请号：US694465
申请日：1976-06-09
申请人： Michael W. Foxton , Gordon I. Gregory , David M. Rogers
发明人： Michael W. Foxton , Gordon I. Gregory , David M. Rogers
IPC分类号： A61K31/545 , A61K31/546 , A61P31/04 , C07D307/54 , C07D333/24 , C07D501/20 , C07D501/26 , C07D501/32 , C07D501/34
CPC分类号： C07D501/20 , C07D307/54 , C07D333/24
摘要： Cephalosporin antibiotics in which the 7.beta.-acylamido group has the structure ##STR1## (WHERE R is phenyl, thienyl or furyl; R.sup.a and R.sup.b are each selected from hydrogen, C.sub.1-4 alkyl, C.sub.2-4 alkenyl, C.sub.3-7 cycloalkyl, phenyl, naphthyl, thienyl, furyl, carboxy, C.sub.2-5 alkoxycarbonyl, aminocarbonyl, N-substituted aminocarbonyl and cyano, or R.sup.a and R.sup.b together with the carbon atom to which they are attached form a C.sub.3-7 cycloalkylidene or cycloalkenylidene group; R.sup.c is hydrogen or C.sub.1-4 alkyl; and m and n are each 0 or 1 such that the sum of m and n is 0 or 1) exhibit broad spectrum antibiotic activity characterized by particularly high activity against gram negative microorganisms, including those which produce .beta.-lactamases. The compounds, which are syn isomers or exist as mixtures of syn and anti isomers containing at least 90% of the syn isomer, have particularly good activity against Proteus organisms including indole positive strains and, especially when both R.sup.a and R.sup.b are other than hydrogen, against Pseudomonas organisms.
摘要翻译：头孢菌素抗生素，其中7β-酰胺基具有结构（其中R是苯基，噻吩基或呋喃基; R a和R b各自选自氢，C 1-4烷基，C 2-4链烯基，C 3-7环烷基，苯基，萘基，噻吩基，呋喃基，羧基，C 2-5烷氧基羰基，氨基羰基，N-取代的氨基羰基和氰基，或者R a和R b与它们所连接的碳原子一起形成C 3-7亚环烷基或亚环烯基; R c是氢或C 1-4烷基; m和n各自为0或1，使得m和n的和为0或1）表现出广谱抗生素活性，其特征在于对革兰氏阴性微生物特别高的活性，包括产生β- 内酰胺酶作为syn异构体的化合物或含有至少90％的顺式异构体的合成和反异构体的混合物的化合物对包括吲哚阳性菌株在内的变形杆菌生物具有特别好的活性，特别是当Ra和Rb都不是氢时，针对假单胞菌生物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式