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1. 发明申请

US20110121306A1 Systems and Methods for Non-Periodic Pulse Sequential Lateral Solidification 失效
标题翻译：非周期脉冲顺序横向凝固的系统和方法
公开(公告)号：US20110121306A1
公开(公告)日：2011-05-26
申请号：US12776756
申请日：2010-05-10
申请人： James S. Im , Ui-Jin Chung , Alexander B. Limanov , Paul C. Van Der Wilt
发明人： James S. Im , Ui-Jin Chung , Alexander B. Limanov , Paul C. Van Der Wilt
IPC分类号： H01L29/786 , H01L21/268 , H01L29/04 , B23K26/00
CPC分类号： H01L21/268 , B23K26/354 , B23K2101/40 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691 , H01L27/1285 , H01L27/1296
摘要： The disclosed systems and method for non-periodic pulse sequential lateral solidification relate to processing a thin film. The method for processing a thin film, while advancing a thin film in a selected direction, includes irradiating a first region of the thin film with a first laser pulse and a second laser pulse and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse. In some embodiments, each pulse provides a shaped beam and has a fluence that is sufficient to melt the thin film throughout its thickness to form molten zones that laterally crystallize upon cooling. In some embodiments, the first and second regions are adjacent to each other. In some embodiments, the first and second regions are spaced a distance apart.
摘要翻译：所公开的用于非周期脉冲顺序侧向凝固的系统和方法涉及加工薄膜。用于在选择的方向上推进薄膜的同时进行薄膜的处理的方法包括用第一激光脉冲和第二激光脉冲照射薄膜的第一区域，并用第三激光器照射薄膜的第二区域脉冲和第四激光脉冲，其中第一激光脉冲和第二激光脉冲之间的时间间隔小于第一激光脉冲和第三激光脉冲之间的时间间隔的一半。在一些实施例中，每个脉冲提供成形梁并且具有足够的能量密度，以在其厚度上熔化薄膜以形成冷却时横向结晶的熔融区域。在一些实施例中，第一和第二区域彼此相邻。在一些实施例中，第一和第二区域间隔一段距离。

2. 发明授权

US09087696B2 Systems and methods for non-periodic pulse partial melt film processing 有权
标题翻译：非周期脉冲部分熔膜加工的系统和方法
公开(公告)号：US09087696B2
公开(公告)日：2015-07-21
申请号：US13505961
申请日：2010-11-02
申请人： James S. Im , Yikang Deng , Qiongying Hu , Ui-Jin Chung , Alexander B. Limanov
发明人： James S. Im , Yikang Deng , Qiongying Hu , Ui-Jin Chung , Alexander B. Limanov
IPC分类号： H01L21/20 , H01L21/02 , H01L29/04 , H01L21/67 , H01L29/786 , B23K26/00 , H01L21/268 , H01L27/12
CPC分类号： H01L21/02686 , B23K26/083 , B23K26/354 , B23K2101/40 , H01L21/02532 , H01L21/0268 , H01L21/02691 , H01L21/268 , H01L21/67115 , H01L21/707 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66765 , H01L29/78678
摘要： In one aspect, the present disclosure relates to a method of processing a thin film including, while advancing a thin film in a first selected direction, irradiating a first region of the thin film with a first laser pulse and a second laser pulse, each laser pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the first region re-solidifying and crystallizing to form a first crystallized region, and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, each pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the second region re-solidifying and crystallizing to form a second crystallized region, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse.
摘要翻译：一方面，本公开内容涉及一种处理薄膜的方法，包括当沿着第一选定方向前进薄膜时，用第一激光脉冲和第二激光脉冲照射薄膜的第一区域，每个激光器脉冲提供成形的束并且具有足以使薄膜部分熔融并且第一区域重新凝固和结晶以形成第一结晶区域的能量密度，并且用第三激光脉冲和第三激光脉冲照射薄膜的第二区域第四激光脉冲，每个脉冲提供成形光束并且具有足以部分熔化薄膜并且第二区域重新凝固和结晶以形成第二结晶区域的能量密度，其中第一激光脉冲和第二激光脉冲小于第一激光脉冲和第三激光脉冲之间的时间间隔的一半。

3. 发明授权

US08440581B2 Systems and methods for non-periodic pulse sequential lateral solidification 失效
标题翻译：非周期脉冲顺序侧向固化的系统和方法
公开(公告)号：US08440581B2
公开(公告)日：2013-05-14
申请号：US12776756
申请日：2010-05-10
申请人： James S. Im , Ui-Jin Chung , Alexander B. Limanov , Paul C. Van Der Wilt
发明人： James S. Im , Ui-Jin Chung , Alexander B. Limanov , Paul C. Van Der Wilt
IPC分类号： H01L21/00
CPC分类号： H01L21/268 , B23K26/354 , B23K2101/40 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691 , H01L27/1285 , H01L27/1296
摘要： The disclosed systems and method for non-periodic pulse sequential lateral solidification relate to processing a thin film. The method for processing a thin film, while advancing a thin film in a selected direction, includes irradiating a first region of the thin film with a first laser pulse and a second laser pulse and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse. In some embodiments, each pulse provides a shaped beam and has a fluence that is sufficient to melt the thin film throughout its thickness to form molten zones that laterally crystallize upon cooling. In some embodiments, the first and second regions are adjacent to each other. In some embodiments, the first and second regions are spaced a distance apart.
摘要翻译：所公开的用于非周期脉冲顺序侧向凝固的系统和方法涉及加工薄膜。用于在选择的方向上推进薄膜的同时进行薄膜的处理的方法包括用第一激光脉冲和第二激光脉冲照射薄膜的第一区域，并用第三激光器照射薄膜的第二区域脉冲和第四激光脉冲，其中第一激光脉冲和第二激光脉冲之间的时间间隔小于第一激光脉冲和第三激光脉冲之间的时间间隔的一半。在一些实施例中，每个脉冲提供成形梁并且具有足够的能量密度，以在其厚度上熔化薄膜以形成冷却时横向结晶的熔融区域。在一些实施例中，第一和第二区域彼此相邻。在一些实施例中，第一和第二区域间隔一段距离。

4. 发明申请

US20130105807A1 SYSTEMS AND METHODS FOR NON-PERIODIC PULSE PARTIAL MELT FILM PROCESSING 有权
标题翻译：非定期脉冲部分熔体薄膜处理的系统和方法
公开(公告)号：US20130105807A1
公开(公告)日：2013-05-02
申请号：US13505961
申请日：2010-11-02
申请人： James S. Im , Yikang Deng , Qiongying Hu , Ui-Jin Chung , Alexander B. Limanov
发明人： James S. Im , Yikang Deng , Qiongying Hu , Ui-Jin Chung , Alexander B. Limanov
IPC分类号： H01L21/02 , H01L21/67 , H01L29/786 , H01L29/04
CPC分类号： H01L21/02686 , B23K26/083 , B23K26/354 , B23K2101/40 , H01L21/02532 , H01L21/0268 , H01L21/02691 , H01L21/268 , H01L21/67115 , H01L21/707 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66765 , H01L29/78678
摘要： In one aspect, the present disclosure relates to a method of processing a thin film including, while advancing a thin film in a first selected direction, irradiating a first region of the thin film with a first laser pulse and a second laser pulse, each laser pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the first region re-solidifying and crystallizing to form a first crystallized region, and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, each pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the second region re-solidifying and crystallizing to form a second crystallized region, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse.
摘要翻译：一方面，本公开内容涉及一种处理薄膜的方法，包括当沿着第一选定方向前进薄膜时，用第一激光脉冲和第二激光脉冲照射薄膜的第一区域，每个激光器脉冲提供成形的束并且具有足以使薄膜部分熔融并且第一区域重新凝固和结晶以形成第一结晶区域的能量密度，并且用第三激光脉冲和第三激光脉冲照射薄膜的第二区域第四激光脉冲，每个脉冲提供成形光束并且具有足以部分熔化薄膜并且第二区域重新凝固和结晶以形成第二结晶区域的能量密度，其中第一激光脉冲和第二激光脉冲小于第一激光脉冲和第三激光脉冲之间的时间间隔的一半。

5. 发明申请

US20110108843A1 COLLECTIONS OF LATERALLY CRYSTALLIZED SEMICONDUCTOR ISLANDS FOR USE IN THIN FILM TRANSISTORS 失效
标题翻译：用于薄膜晶体管的横向晶体半导体岛的收集
公开(公告)号：US20110108843A1
公开(公告)日：2011-05-12
申请号：US12679064
申请日：2008-09-22
申请人： James S. Im , Ui-Jin Chung
发明人： James S. Im , Ui-Jin Chung
IPC分类号： H01L33/16 , H01L21/20
CPC分类号： H01L33/16 , H01L27/12 , H01L27/1281
摘要： Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same are described. A display device includes a plurality of thin film transistors (TFTs) on a substrate, such that the TFTs are spaced apart from each other and each include a channel region that has a crystalline microstructure and a direction along which a channel current flows. The channel region of each of the TFTs contains a crystallographic grain that spans the length of that channel region along its channel direction. Each crystallographic grain in the channel region of each of the TFTs is physically disconnected from and crystallographically uncorrelated with each crystallographic grain in the channel region of each adjacent TFT.
摘要翻译：描述了用于薄膜晶体管和系统的横向结晶半导体岛的集合及其制造方法。显示装置包括在基板上的多个薄膜晶体管（TFT），使得TFT彼此间隔开，并且每个包括具有结晶微结构的沟道区域和沟道电流流过的方向。每个TFT的沟道区域包含沿其沟道方向跨越该沟道区的长度的晶体晶粒。每个TFT的沟道区域中的每个晶体晶粒与每个相邻TFT的沟道区域中的每个晶体晶粒物理断开并在晶体学上不相关。

6. 发明授权

US08614471B2 Collections of laterally crystallized semiconductor islands for use in thin film transistors 失效
公开(公告)号：US08614471B2
公开(公告)日：2013-12-24
申请号：US12679064
申请日：2008-09-22
申请人： James S. Im , Ui-Jin Chung
发明人： James S. Im , Ui-Jin Chung
IPC分类号： H01L27/108 , H01L21/336 , H01L29/76
CPC分类号： H01L33/16 , H01L27/12 , H01L27/1281
摘要： Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same are described. A display device includes a plurality of thin film transistors (TFTs) on a substrate, such that the TFTs are spaced apart from each other and each include a channel region that has a crystalline microstructure and a direction along which a channel current flows. The channel region of each of the TFTs contains a crystallographic grain that spans the length of that channel region along its channel direction. Each crystallographic grain in the channel region of each of the TFTs is physically disconnected from and crystallographically uncorrelated with each crystallographic grain in the channel region of each adjacent TFT.

7. 发明申请

US20110108108A1 FLASH LIGHT ANNEALING FOR THIN FILMS 审中-公开
标题翻译：闪光灯对薄膜的退火
公开(公告)号：US20110108108A1
公开(公告)日：2011-05-12
申请号：US12919687
申请日：2009-02-27
申请人： James S. Im , Paul C. Van Der Wilt , Ui-Jin Chung
发明人： James S. Im , Paul C. Van Der Wilt , Ui-Jin Chung
IPC分类号： H01L31/0368 , H01L21/26 , H01L31/18 , H01L29/04
CPC分类号： H01L21/02667 , H01L21/02425 , H01L21/02532 , H01L21/02609 , H01L21/02686 , H01L21/2686 , H01L21/67115 , H01L31/0236 , H01L31/028 , H01L31/03762 , H01L31/03921 , H01L31/072 , H01L31/1804 , H01L31/1872 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method of making a crystalline film includes providing a film comprising seed grains of a selected crystallographic surface orientation on a substrate; irradiating the film using a pulsed light source to provide pulsed melting of the film under conditions that provide a mixed liquid/solid phase and allowing the mixed solid/liquid phase to solidify under conditions that provide a textured polycrystalline layer having the selected surface orientation. One or more irradiation treatments may be used. The film is suitable for use in solar cells.
摘要翻译：制造结晶膜的方法包括在基板上提供包含选定的结晶表面取向的晶粒的膜; 使用脉冲光源照射膜，以在提供混合液/固相的条件下提供膜的脉冲熔融，并允许混合的固/液相在提供具有选定表面取向的织构化多晶层的条件下固化。可以使用一种或多种照射处理。该膜适用于太阳能电池。

8. 发明申请

US20060228908A1 Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same 有权
公开(公告)号：US20060228908A1
公开(公告)日：2006-10-12
申请号：US11234609
申请日：2005-09-23
申请人： Se-Jin Chung , Chi-Woo Kim , Ui-Jin Chung , Dong-Byum Kim
发明人： Se-Jin Chung , Chi-Woo Kim , Ui-Jin Chung , Dong-Byum Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78606 , H01L29/78675
摘要： In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

9. 发明申请

US20090275178A1 METHOD OF MANUFACTURING POLYSILICON THIN FILM AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR HAVING THE SAME 审中-公开
标题翻译：制造多晶硅薄膜的方法及其制造薄膜薄膜晶体管的方法
公开(公告)号：US20090275178A1
公开(公告)日：2009-11-05
申请号：US12490236
申请日：2009-06-23
申请人： Se-Jin CHUNG , Chi-Woo Kim , Ui-Jin Chung , Dong-Byum Kim
发明人： Se-Jin CHUNG , Chi-Woo Kim , Ui-Jin Chung , Dong-Byum Kim
IPC分类号： H01L21/336 , H01L21/268
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78606 , H01L29/78675
摘要： In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.
摘要翻译：在制造多晶硅薄膜的方法和制造具有薄膜的TFT的方法中，激光束被照射在非晶硅薄膜的一部分上以使非晶硅薄膜的部分液化。非晶硅薄膜位于基板的第一端部上。液化硅结晶形成硅晶粒。激光束从第一端部朝向与第一端部相反的第二端部朝向第一方向的间隔移动。然后将激光束照射到与硅晶粒相邻的非晶硅薄膜的一部分上以形成第一多晶硅薄膜。因此，可以提高非晶硅薄膜的电特性。

10. 发明申请

US20060240608A1 Method and apparatus for crystallizing silicon, method of forming a thin film transistor, a thin film transistor and a display apparatus using same 审中-公开
标题翻译：用于结晶硅的方法和装置，形成薄膜晶体管的方法，薄膜晶体管和使用它的显示装置
公开(公告)号：US20060240608A1
公开(公告)日：2006-10-26
申请号：US11472177
申请日：2006-06-21
申请人： Dong-Byum Kim , Se-Jin Chung , Ui-Jin Chung
发明人： Dong-Byum Kim , Se-Jin Chung , Ui-Jin Chung
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L21/02686 , B23K26/0622 , B23K26/067 , B23K26/0673 , B23K26/0732 , B23K26/0736 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/66765 , H01L29/78678
摘要： A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser beam having a decreased output energy is irradiated on the amorphous silicon thin film to crystallize the amorphous silicon thin film to a polysilicon thin film so that the load of an apparatus for generating the laser beam is decreased, and the lifetime of the apparatus for generating the laser beam increases.
摘要翻译：产生脉冲频率高于约300Hz的光。光在非晶硅薄膜上照射预定时间以形成初始多晶硅晶体。光沿预定方向输送以生长初始多晶硅晶体。具有降低的输出能量的激光束被照射在非晶硅薄膜上，以将非晶硅薄膜结晶成多晶硅薄膜，使得用于产生激光束的装置的负载减小，并且该装置的寿命产生激光束增加。

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