专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130105807A1 SYSTEMS AND METHODS FOR NON-PERIODIC PULSE PARTIAL MELT FILM PROCESSING 有权
标题翻译：非定期脉冲部分熔体薄膜处理的系统和方法
公开(公告)号：US20130105807A1
公开(公告)日：2013-05-02
申请号：US13505961
申请日：2010-11-02
申请人： James S. Im , Yikang Deng , Qiongying Hu , Ui-Jin Chung , Alexander B. Limanov
发明人： James S. Im , Yikang Deng , Qiongying Hu , Ui-Jin Chung , Alexander B. Limanov
IPC分类号： H01L21/02 , H01L21/67 , H01L29/786 , H01L29/04
CPC分类号： H01L21/02686 , B23K26/083 , B23K26/354 , B23K2101/40 , H01L21/02532 , H01L21/0268 , H01L21/02691 , H01L21/268 , H01L21/67115 , H01L21/707 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66765 , H01L29/78678
摘要： In one aspect, the present disclosure relates to a method of processing a thin film including, while advancing a thin film in a first selected direction, irradiating a first region of the thin film with a first laser pulse and a second laser pulse, each laser pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the first region re-solidifying and crystallizing to form a first crystallized region, and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, each pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the second region re-solidifying and crystallizing to form a second crystallized region, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse.
摘要翻译：一方面，本公开内容涉及一种处理薄膜的方法，包括当沿着第一选定方向前进薄膜时，用第一激光脉冲和第二激光脉冲照射薄膜的第一区域，每个激光器脉冲提供成形的束并且具有足以使薄膜部分熔融并且第一区域重新凝固和结晶以形成第一结晶区域的能量密度，并且用第三激光脉冲和第三激光脉冲照射薄膜的第二区域第四激光脉冲，每个脉冲提供成形光束并且具有足以部分熔化薄膜并且第二区域重新凝固和结晶以形成第二结晶区域的能量密度，其中第一激光脉冲和第二激光脉冲小于第一激光脉冲和第三激光脉冲之间的时间间隔的一半。

2. 发明申请

US20110108843A1 COLLECTIONS OF LATERALLY CRYSTALLIZED SEMICONDUCTOR ISLANDS FOR USE IN THIN FILM TRANSISTORS 失效
标题翻译：用于薄膜晶体管的横向晶体半导体岛的收集
公开(公告)号：US20110108843A1
公开(公告)日：2011-05-12
申请号：US12679064
申请日：2008-09-22
申请人： James S. Im , Ui-Jin Chung
发明人： James S. Im , Ui-Jin Chung
IPC分类号： H01L33/16 , H01L21/20
CPC分类号： H01L33/16 , H01L27/12 , H01L27/1281
摘要： Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same are described. A display device includes a plurality of thin film transistors (TFTs) on a substrate, such that the TFTs are spaced apart from each other and each include a channel region that has a crystalline microstructure and a direction along which a channel current flows. The channel region of each of the TFTs contains a crystallographic grain that spans the length of that channel region along its channel direction. Each crystallographic grain in the channel region of each of the TFTs is physically disconnected from and crystallographically uncorrelated with each crystallographic grain in the channel region of each adjacent TFT.
摘要翻译：描述了用于薄膜晶体管和系统的横向结晶半导体岛的集合及其制造方法。显示装置包括在基板上的多个薄膜晶体管（TFT），使得TFT彼此间隔开，并且每个包括具有结晶微结构的沟道区域和沟道电流流过的方向。每个TFT的沟道区域包含沿其沟道方向跨越该沟道区的长度的晶体晶粒。每个TFT的沟道区域中的每个晶体晶粒与每个相邻TFT的沟道区域中的每个晶体晶粒物理断开并在晶体学上不相关。

3. 发明申请

US20060240608A1 Method and apparatus for crystallizing silicon, method of forming a thin film transistor, a thin film transistor and a display apparatus using same 审中-公开
标题翻译：用于结晶硅的方法和装置，形成薄膜晶体管的方法，薄膜晶体管和使用它的显示装置
公开(公告)号：US20060240608A1
公开(公告)日：2006-10-26
申请号：US11472177
申请日：2006-06-21
申请人： Dong-Byum Kim , Se-Jin Chung , Ui-Jin Chung
发明人： Dong-Byum Kim , Se-Jin Chung , Ui-Jin Chung
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L21/02686 , B23K26/0622 , B23K26/067 , B23K26/0673 , B23K26/0732 , B23K26/0736 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/66765 , H01L29/78678
摘要： A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser beam having a decreased output energy is irradiated on the amorphous silicon thin film to crystallize the amorphous silicon thin film to a polysilicon thin film so that the load of an apparatus for generating the laser beam is decreased, and the lifetime of the apparatus for generating the laser beam increases.
摘要翻译：产生脉冲频率高于约300Hz的光。光在非晶硅薄膜上照射预定时间以形成初始多晶硅晶体。光沿预定方向输送以生长初始多晶硅晶体。具有降低的输出能量的激光束被照射在非晶硅薄膜上，以将非晶硅薄膜结晶成多晶硅薄膜，使得用于产生激光束的装置的负载减小，并且该装置的寿命产生激光束增加。

4. 发明申请

US20050181553A1 Method and apparatus for crystallizing silicon, method of forming a thin film transistor, a thin film transistor and a display apparatus using same 审中-公开
标题翻译：用于结晶硅的方法和装置，形成薄膜晶体管的方法，薄膜晶体管和使用它的显示装置
公开(公告)号：US20050181553A1
公开(公告)日：2005-08-18
申请号：US10844998
申请日：2004-05-13
申请人： Dong-Byum Kim , Se-Jin Chung , Ui-Jin Chung
发明人： Dong-Byum Kim , Se-Jin Chung , Ui-Jin Chung
IPC分类号： H01L21/324 , B23K26/06 , B23K26/067 , B23K26/073 , C30B29/06 , C30B30/00 , C30B35/00 , H01L21/20 , H01L21/336 , H01L29/04 , H01L29/786
CPC分类号： H01L21/02686 , B23K26/0622 , B23K26/067 , B23K26/0673 , B23K26/0732 , B23K26/0736 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/66765 , H01L29/78678
摘要： A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser beam having a decreased output energy is irradiated on the amorphous silicon thin film to crystallize the amorphous silicon thin film to a polysilicon thin film so that the load of an apparatus for generating the laser beam is decreased, and the lifetime of the apparatus for generating the laser beam increases.
摘要翻译：产生脉冲频率高于约300Hz的光。光在非晶硅薄膜上照射预定时间以形成初始多晶硅晶体。光沿预定方向输送以生长初始多晶硅晶体。具有降低的输出能量的激光束被照射在非晶硅薄膜上，以将非晶硅薄膜结晶成多晶硅薄膜，使得用于产生激光束的装置的负载减小，并且该装置的寿命产生激光束增加。

5. 发明申请

US20050173752A1 Optic mask and manufacturing method of thin film transistor array panel using the same 有权
标题翻译：薄膜晶体管阵列面板的光掩模和制造方法采用相同的方法
公开(公告)号：US20050173752A1
公开(公告)日：2005-08-11
申请号：US11029011
申请日：2005-01-05
申请人： Ui-Jin Chung , Myung-Koo Kang , Jae-Bok Lee
发明人： Ui-Jin Chung , Myung-Koo Kang , Jae-Bok Lee
IPC分类号： H01L29/786 , B23K26/06 , G02F1/1368 , G03F1/00 , G09F9/00 , H01L21/027 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/788
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/2026 , H01L27/1285
摘要： An optic mask for crystallizing amorphous silicon comprises a first slit region including a plurality of slits regularly arranged for defining incident region of laser beam, wherein the slits of the first slit region are formed to slope by a predetermined angle to the direction of transfer of the optic mask in crystallization process, and wherein the slits of the first slit region includes a first slit having a first length and a second slit having a second length which is longer than the first length.
摘要翻译：用于结晶非晶硅的光学掩模包括：第一狭缝区域，其包括规则地布置用于限定激光束的入射区域的多个狭缝，其中，所述第一狭缝区域的狭缝形成为与所述第一狭缝区域的传送方向倾斜预定角度并且其中所述第一狭缝区域的狭缝包括具有第一长度的第一狭缝和具有比所述第一长度长的第二长度的第二狭缝。

6. 发明授权

US07879700B2 Crystallization apparatus and method of amorphous silicon 有权
标题翻译：非晶硅结晶装置及方法
公开(公告)号：US07879700B2
公开(公告)日：2011-02-01
申请号：US10547070
申请日：2004-02-24
申请人： Ui-Jin Chung , Dong-Byum Kim , Su-Gyeong Lee , Myung-Koo Kang , Hyun-Jae Kim
发明人： Ui-Jin Chung , Dong-Byum Kim , Su-Gyeong Lee , Myung-Koo Kang , Hyun-Jae Kim
IPC分类号： H01L21/322 , H01L21/428
CPC分类号： B23K26/0676 , B23K26/06 , B23K26/064 , B23K26/0643 , B23K26/066 , B23K26/067 , B23K26/0732 , B23K2101/40 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L27/1285
摘要： A silicon crystallization system includes a beam generator generating a laser beam, first and second optical units for controlling the laser beam from the beam generator; and a stage for mounting a panel including an amorphous silicon layer to be polycrystallized by the laser beam from the optical units. The first optical unit makes the laser beam have a transverse edge and a longitudinal edge longer than the transverse edge, and the second optical unit makes the laser beam have a transverse edge and a longitudinal edge shorter than the transverse edge.
摘要翻译：硅结晶系统包括产生激光束的光束发生器，用于控制来自光束发生器的激光束的第一和第二光学单元; 以及用于安装包括由来自光学单元的激光束多晶化的非晶硅层的面板的台。第一光学单元使得激光束具有比横向边缘长的横向边缘和纵向边缘，并且第二光学单元使得激光束具有比横向边缘更短的横向边缘和纵向边缘。

7. 发明授权

US07858450B2 Optic mask and manufacturing method of thin film transistor array panel using the same 有权
标题翻译：薄膜晶体管阵列面板的光掩模和制造方法采用相同的方法
公开(公告)号：US07858450B2
公开(公告)日：2010-12-28
申请号：US11029011
申请日：2005-01-05
申请人： Ui-Jin Chung , Myung-Koo Kang , Jae-Bok Lee
发明人： Ui-Jin Chung , Myung-Koo Kang , Jae-Bok Lee
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/2026 , H01L27/1285
摘要： An optic mask for crystallizing amorphous silicon comprises a first slit region including a plurality of slits regularly arranged for defining incident region of laser beam, wherein the slits of the first slit region are formed to slope by a predetermined angle to the direction of transfer of the optic mask in crystallization process, and wherein the slits of the first slit region includes a first slit having a first length and a second slit having a second length which is longer than the first length.
摘要翻译：用于结晶非晶硅的光学掩模包括：第一狭缝区域，其包括规则地布置用于限定激光束的入射区域的多个狭缝，其中，所述第一狭缝区域的狭缝形成为与所述第一狭缝区域的传送方向倾斜预定角度并且其中所述第一狭缝区域的狭缝包括具有第一长度的第一狭缝和具有比所述第一长度长的第二长度的第二狭缝。

8. 发明授权

US07557050B2 Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same 有权
标题翻译：制造多晶硅薄膜的方法及其制造方法
公开(公告)号：US07557050B2
公开(公告)日：2009-07-07
申请号：US11234609
申请日：2005-09-23
申请人： Se-Jin Chung , Chi-Woo Kim , Ui-Jin Chung , Dong-Byum Kim
发明人： Se-Jin Chung , Chi-Woo Kim , Ui-Jin Chung , Dong-Byum Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78606 , H01L29/78675
摘要： In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.
摘要翻译：在制造多晶硅薄膜的方法和制造具有薄膜的TFT的方法中，激光束被照射在非晶硅薄膜的一部分上以使非晶硅薄膜的部分液化。非晶硅薄膜位于基板的第一端部上。液化硅结晶形成硅晶粒。激光束从第一端部朝向与第一端部相反的第二端部朝向第一方向的间隔移动。然后将激光束照射到与硅晶粒相邻的非晶硅薄膜的一部分上以形成第一多晶硅薄膜。因此，可以提高非晶硅薄膜的电特性。

9. 发明申请

US20070042575A1 Crystallization apparatus and method of amophous silicon 审中-公开
标题翻译：淀粉硅结晶装置及方法
公开(公告)号：US20070042575A1
公开(公告)日：2007-02-22
申请号：US10549334
申请日：2004-03-12
申请人： Su-Gyeong Lee , Dong-Byum Kim , Myung-Koo Kang , Ui-Jin Chung , Hyun-Jae Kim
发明人： Su-Gyeong Lee , Dong-Byum Kim , Myung-Koo Kang , Ui-Jin Chung , Hyun-Jae Kim
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02675 , B23K26/0604 , B23K26/067 , B23K26/0673 , H01L21/02532 , H01L21/02678 , H01L21/2026 , H01L21/268
摘要： A plurality laser beams generated by a plurality of beam generators are synthesized by a beam synthesizer. The synthesized beam is splitted into a plurality of beamlets and provided for a plurality of optical units controlling the beamlets. Each beamlet controlled by each optical unit is illuminated onto an amorphous silicon layer deposited on a substrate that is mounted on a plurality of stages to be polycrystallized.
摘要翻译：由多个光束发生器产生的多个激光束由光束合成器合成。合成的光束被分裂成多个子束并且被设置用于控制子束的多个光学单元。由每个光学单元控制的每个子束被照射到沉积在基板上的非晶硅层上，所述非晶硅层安装在多个阶段上以进行多晶化。

10. 发明申请

US20060148165A1 Crystallization apparatus and method of amorphous silicon 有权
标题翻译：非晶硅结晶装置及方法
公开(公告)号：US20060148165A1
公开(公告)日：2006-07-06
申请号：US10547070
申请日：2004-02-24
申请人： Ui-Jin Chung , Dong-Byum Kim , Su-Gyeong Lee , Myung-Koo Kang , Hyun-Jae Kim
发明人： Ui-Jin Chung , Dong-Byum Kim , Su-Gyeong Lee , Myung-Koo Kang , Hyun-Jae Kim
IPC分类号： H01L21/8238
CPC分类号： B23K26/0676 , B23K26/06 , B23K26/064 , B23K26/0643 , B23K26/066 , B23K26/067 , B23K26/0732 , B23K2101/40 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L27/1285
摘要： A silicon crystallization system includes a beam generator generating a laser beam, first and second optical units for controlling the laser beam from the beam generator; and a stage for mounting a panel including an amorphous silicon layer to be polycrystallized by the laser beam from the optical units. The first optical unit makes the laser beam have a transverse edge and a longitudinal edge longer than the transverse edge, and the second optical unit makes the laser beam have a transverse edge and a longitudinal edge shorter than the transverse edge.
摘要翻译：硅结晶系统包括产生激光束的光束发生器，用于控制来自光束发生器的激光束的第一和第二光学单元; 以及用于安装包括由来自光学单元的激光束多晶化的非晶硅层的面板的台。第一光学单元使得激光束具有比横向边缘长的横向边缘和纵向边缘，并且第二光学单元使得激光束具有比横向边缘更短的横向边缘和纵向边缘。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式