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1. 发明授权

US08658883B2 Solar cell module and method for manufacturing the same 失效
标题翻译：太阳能电池组件及其制造方法
公开(公告)号：US08658883B2
公开(公告)日：2014-02-25
申请号：US12618643
申请日：2009-11-13
申请人： Kang-Hee Lee , Byoung-Dong Kim , Se-Jin Chung , Gug-Il Jun , Woo-Su Lee , Byung-Joo Lee
发明人： Kang-Hee Lee , Byoung-Dong Kim , Se-Jin Chung , Gug-Il Jun , Woo-Su Lee , Byung-Joo Lee
IPC分类号： H01L31/042
CPC分类号： H01L31/0508 , H01L31/0465 , H02S40/36 , Y02E10/50
摘要： A solar cell module is provided. The solar cell module includes: a substrate; a plurality of unit cells including a first electrode, a semiconductor layer, and a second electrode that are sequentially deposited on the substrate; a first sub-module and a second sub-module having the unit cells, respectively; a first longitudinal pattern dividing the unit cells of the first sub-module, and a second longitudinal pattern dividing the unit cells of the second sub-module; a transverse pattern dividing the first sub-module and the second sub-module; and an insulating portion disposed near the transverse pattern, and insulating between the first sub-module and the second sub-module, wherein the unit cells of the first sub-module are connected in series through the first longitudinal pattern, the unit cells of the second sub-module are connected in series through the second longitudinal pattern, and the first sub-module and the second sub-module are connected in series through the transverse pattern.
摘要翻译：提供太阳能电池模块。太阳能电池模块包括：基板; 多个单元电池，包括依次沉积在基板上的第一电极，半导体层和第二电极; 分别具有单元的第一子模块和第二子模块; 划分第一子模块的单位单元的第一纵向模式和划分第二子模块的单位单元的第二纵向模式; 划分所述第一子模块和所述第二子模块的横向图案; 以及设置在横向图案附近并在第一子模块和第二子模块之间绝缘的绝缘部分，其中第一子模块的单元电池通过第一纵向图案串联连接，第二子模块通过第二纵向图案串联连接，并且第一子模块和第二子模块通过横向图案串联连接。

2. 发明申请

US20100159633A1 METHOD OF MANUFACTURING PHOTOVOLTAIC DEVICE 失效
标题翻译：制造光伏器件的方法
公开(公告)号：US20100159633A1
公开(公告)日：2010-06-24
申请号：US12642527
申请日：2009-12-18
申请人： Byoung-Kyu LEE , Se-Jin Chung , Byoung-June Kim , Czang-Ho Lee , Myung-Hun Shin , Min-Seok Oh , Ku-Hyun Kang , Yuk-Hyun Nam , Seung-Jae Jung , Min Park , Mi-Hwa Lim , Joon-Young Seo
发明人： Byoung-Kyu LEE , Se-Jin Chung , Byoung-June Kim , Czang-Ho Lee , Myung-Hun Shin , Min-Seok Oh , Ku-Hyun Kang , Yuk-Hyun Nam , Seung-Jae Jung , Min Park , Mi-Hwa Lim , Joon-Young Seo
IPC分类号： H01L21/326 , H01L31/02
CPC分类号： H01L21/324 , H01L21/02667 , H01L31/03921 , H01L31/046 , H01L31/075 , H01L31/1872 , Y02E10/548 , Y02P70/521
摘要： Provided is a method of manufacturing a photovoltaic device using a Joule heating-induced crystallization method. The method includes: forming a first conductive pattern on a substrate; forming a photoelectric conversion layer on the substrate having the first conductive pattern; and crystallizing at least part of the photoelectric conversion layer by applying an electric field to the photoelectric conversion layer, wherein the photoelectric conversion layer includes a first amorphous semiconductor layer containing first impurities, a second intrinsic, amorphous semiconductor layer, and a third amorphous semiconductor layer containing second impurities.
摘要翻译：提供了使用焦耳加热诱导结晶法制造光伏器件的方法。该方法包括：在衬底上形成第一导电图案; 在具有第一导电图案的基板上形成光电转换层; 以及通过向所述光电转换层施加电场而使所述光电转换层的至少一部分结晶，其中所述光电转换层包括含有第一杂质的第一非晶半导体层，第二本征非晶半导体层和第三非晶半导体层含有第二杂质。

3. 发明申请

US20070054477A1 Method of forming polycrystalline silicon thin film and method of manufacturing thin film transistor using the method 有权
标题翻译：使用该方法形成多晶硅薄膜的方法和制造薄膜晶体管的方法
公开(公告)号：US20070054477A1
公开(公告)日：2007-03-08
申请号：US11506723
申请日：2006-08-18
申请人： Dong-byum Kim , Se-jin Chung
发明人： Dong-byum Kim , Se-jin Chung
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02532 , H01L21/2026 , H01L27/1285 , H01L29/045
摘要： Provided are a method of forming a polycrystalline silicon thin film with improved electrical characteristics and a method of manufacturing a thin film transistor using the method of forming the polycrystalline silicon thin film. The method includes forming an amorphous silicon thin film on a substrate, partially melting a portion of the amorphous silicon thin film by irradiating the portion of the amorphous silicon thin film with a laser beam having a low energy density, forming polycrystalline silicon grains with a predetermined crystalline arrangement by crystallizing the partially molten portion of the amorphous silicon thin film, completely melting a portion of the polycrystalline silicon grains and a portion of the amorphous silicon thin film by irradiation of a laser beam having a high energy density while repeatedly moving the substrate by a predetermined distance, and growing the polycrystalline silicon grains by crystallizing the completely molten silicon homogeneously with the predetermined crystalline arrangement.
摘要翻译：提供一种形成具有改善的电特性的多晶硅薄膜的方法和使用形成多晶硅薄膜的方法制造薄膜晶体管的方法。该方法包括在衬底上形成非晶硅薄膜，通过用具有低能量密度的激光束照射非晶硅薄膜的一部分来部分地熔化非晶硅薄膜的一部分，形成具有预定的多晶硅晶粒的多晶硅晶粒通过使非晶硅薄膜的部分熔融部分结晶，通过照射具有高能量密度的激光束将多晶硅晶粒的一部分和非晶硅薄膜的一部分完全熔化，同时通过预定距离，并且通过使预定结晶布置均匀地结晶完全熔融的硅而生长多晶硅晶粒。

4. 发明申请

US20060240608A1 Method and apparatus for crystallizing silicon, method of forming a thin film transistor, a thin film transistor and a display apparatus using same 审中-公开
标题翻译：用于结晶硅的方法和装置，形成薄膜晶体管的方法，薄膜晶体管和使用它的显示装置
公开(公告)号：US20060240608A1
公开(公告)日：2006-10-26
申请号：US11472177
申请日：2006-06-21
申请人： Dong-Byum Kim , Se-Jin Chung , Ui-Jin Chung
发明人： Dong-Byum Kim , Se-Jin Chung , Ui-Jin Chung
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L21/02686 , B23K26/0622 , B23K26/067 , B23K26/0673 , B23K26/0732 , B23K26/0736 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/66765 , H01L29/78678
摘要： A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser beam having a decreased output energy is irradiated on the amorphous silicon thin film to crystallize the amorphous silicon thin film to a polysilicon thin film so that the load of an apparatus for generating the laser beam is decreased, and the lifetime of the apparatus for generating the laser beam increases.
摘要翻译：产生脉冲频率高于约300Hz的光。光在非晶硅薄膜上照射预定时间以形成初始多晶硅晶体。光沿预定方向输送以生长初始多晶硅晶体。具有降低的输出能量的激光束被照射在非晶硅薄膜上，以将非晶硅薄膜结晶成多晶硅薄膜，使得用于产生激光束的装置的负载减小，并且该装置的寿命产生激光束增加。

5. 发明申请

US20050181553A1 Method and apparatus for crystallizing silicon, method of forming a thin film transistor, a thin film transistor and a display apparatus using same 审中-公开
标题翻译：用于结晶硅的方法和装置，形成薄膜晶体管的方法，薄膜晶体管和使用它的显示装置
公开(公告)号：US20050181553A1
公开(公告)日：2005-08-18
申请号：US10844998
申请日：2004-05-13
申请人： Dong-Byum Kim , Se-Jin Chung , Ui-Jin Chung
发明人： Dong-Byum Kim , Se-Jin Chung , Ui-Jin Chung
IPC分类号： H01L21/324 , B23K26/06 , B23K26/067 , B23K26/073 , C30B29/06 , C30B30/00 , C30B35/00 , H01L21/20 , H01L21/336 , H01L29/04 , H01L29/786
CPC分类号： H01L21/02686 , B23K26/0622 , B23K26/067 , B23K26/0673 , B23K26/0732 , B23K26/0736 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/66765 , H01L29/78678
摘要： A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser beam having a decreased output energy is irradiated on the amorphous silicon thin film to crystallize the amorphous silicon thin film to a polysilicon thin film so that the load of an apparatus for generating the laser beam is decreased, and the lifetime of the apparatus for generating the laser beam increases.
摘要翻译：产生脉冲频率高于约300Hz的光。光在非晶硅薄膜上照射预定时间以形成初始多晶硅晶体。光沿预定方向输送以生长初始多晶硅晶体。具有降低的输出能量的激光束被照射在非晶硅薄膜上，以将非晶硅薄膜结晶成多晶硅薄膜，使得用于产生激光束的装置的负载减小，并且该装置的寿命产生激光束增加。

6. 发明授权

US07829245B2 Mask for sequential lateral solidification and method of manufacturing the same 有权
标题翻译：连续横向固化的掩模及其制造方法
公开(公告)号：US07829245B2
公开(公告)日：2010-11-09
申请号：US11499477
申请日：2006-08-04
申请人： Se-jin Chung , Dong-bum Kim
发明人： Se-jin Chung , Dong-bum Kim
IPC分类号： G03F1/00
CPC分类号： G03F1/54 , B23K26/066 , H01L21/02532 , H01L21/0268
摘要： A mask for sequential lateral solidification capable of preventing pattern deformation that may be caused by laser beam, and a method of manufacturing the same are provided. The mask includes a transparent substrate, and a heat-resistant oxide film pattern, disposed on the transparent substrate, blocking a laser beam.
摘要翻译：提供了能够防止可能由激光束引起的图案变形的顺序侧向凝固的掩模及其制造方法。掩模包括设置在透明基板上的透明基板和耐热氧化膜图案，其阻挡激光束。

7. 发明授权

US07557050B2 Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same 有权
标题翻译：制造多晶硅薄膜的方法及其制造方法
公开(公告)号：US07557050B2
公开(公告)日：2009-07-07
申请号：US11234609
申请日：2005-09-23
申请人： Se-Jin Chung , Chi-Woo Kim , Ui-Jin Chung , Dong-Byum Kim
发明人： Se-Jin Chung , Chi-Woo Kim , Ui-Jin Chung , Dong-Byum Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78606 , H01L29/78675
摘要： In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.
摘要翻译：在制造多晶硅薄膜的方法和制造具有薄膜的TFT的方法中，激光束被照射在非晶硅薄膜的一部分上以使非晶硅薄膜的部分液化。非晶硅薄膜位于基板的第一端部上。液化硅结晶形成硅晶粒。激光束从第一端部朝向与第一端部相反的第二端部朝向第一方向的间隔移动。然后将激光束照射到与硅晶粒相邻的非晶硅薄膜的一部分上以形成第一多晶硅薄膜。因此，可以提高非晶硅薄膜的电特性。

8. 发明申请

US20080213985A1 METHOD OF FORMING POLYCRYSTALLINE SILICON THIN FILM AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR USING THE METHOD 有权
标题翻译：形成多晶硅薄膜的方法和使用该方法制造薄膜晶体管的方法
公开(公告)号：US20080213985A1
公开(公告)日：2008-09-04
申请号：US12045932
申请日：2008-03-11
申请人： Dong-byum Kim , Se-jin Chung
发明人： Dong-byum Kim , Se-jin Chung
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02532 , H01L21/2026 , H01L27/1285 , H01L29/045
摘要： Provided is a method of forming a polycrystalline silicon thin film with improved electrical characteristics. The method includes forming an amorphous silicon thin film on a substrate, partially melting a portion of the amorphous silicon thin film by irradiating the portion of the amorphous silicon thin film with a laser beam having a low energy density, forming polycrystalline silicon grains with a predetermined crystalline arrangement by crystallizing the partially molten portion of the amorphous silicon thin film, completely melting a portion of the polycrystalline silicon grains and a portion of the amorphous silicon thin film by irradiation of a laser beam having a high energy density while repeatedly moving the substrate by a predetermined distance, and growing the polycrystalline silicon grains by crystallizing the completely molten silicon homogeneously with the predetermined crystalline arrangement.
摘要翻译：提供一种形成具有改善的电特性的多晶硅薄膜的方法。该方法包括在衬底上形成非晶硅薄膜，通过用具有低能量密度的激光束照射非晶硅薄膜的一部分来部分地熔化非晶硅薄膜的一部分，形成具有预定的多晶硅晶粒的多晶硅晶粒通过使非晶硅薄膜的部分熔融部分结晶，通过照射具有高能量密度的激光束将多晶硅晶粒的一部分和非晶硅薄膜的一部分完全熔化，同时通过预定距离，并且通过使预定结晶布置均匀地结晶完全熔融的硅而生长多晶硅晶粒。

9. 发明申请

US20070032050A1 Mask for sequential lateral solidification and method of manufacturing the same 有权
标题翻译：连续横向固化的掩模及其制造方法
公开(公告)号：US20070032050A1
公开(公告)日：2007-02-08
申请号：US11499477
申请日：2006-08-04
申请人： Se-jin Chung , Dong-bum Kim
发明人： Se-jin Chung , Dong-bum Kim
IPC分类号： H01L21/20
CPC分类号： G03F1/54 , B23K26/066 , H01L21/02532 , H01L21/0268
摘要： A mask for sequential lateral solidification capable of preventing pattern deformation that may be caused by laser beam, and a method of manufacturing the same are provided. The mask includes a transparent substrate, and a heat-resistant oxide film pattern, disposed on the transparent substrate, blocking a laser beam.
摘要翻译：提供了能够防止可能由激光束引起的图案变形的顺序侧向凝固的掩模及其制造方法。掩模包括设置在透明基板上的透明基板和耐热氧化膜图案，其阻挡激光束。

10. 发明授权

US07172952B2 Polysilicon crystallizing method, method of fabricating thin film transistor using the same, and method of fabricating liquid crystal display thereof 有权
标题翻译：多晶硅结晶方法，使用其制造薄膜晶体管的方法及其制造方法
公开(公告)号：US07172952B2
公开(公告)日：2007-02-06
申请号：US10189770
申请日：2002-07-08
申请人： Se Jin Chung
发明人： Se Jin Chung
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A method of crystallizing polysilicon, a method of fabricating a thin film transistor using the same, and a method of fabricating a liquid crystal display thereof form a polysilicon layer having uniformly oriented crystalline grains with high quality. A polysilicon crystallizing method includes forming a polysilicon layer on a substrate, making grains of the polysilicon layer amorphous except a portion of the grains having specific orientation, and crystallizing the polysilicon layer using the grains having the specific orientation.
摘要翻译：一种使多晶硅结晶的方法，使用其制造薄膜晶体管的方法及其制造方法形成具有高质量均匀定向晶粒的多晶硅层。多晶硅结晶方法包括在基板上形成多晶硅层，使具有特定取向的晶粒的一部分以外的多晶硅层的晶粒非晶化，并使用具有特定取向的晶粒结晶多晶硅层。

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