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1. 发明授权

US10629434B2 Laser irradiation induced surface planarization of polycrystalline silicon films 有权
公开(公告)号：US10629434B2
公开(公告)日：2020-04-21
申请号：US15546914
申请日：2016-04-08
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK , James S. Im , Miao Yu
发明人： James S. Im , Miao Yu
IPC分类号： H01L21/02 , B23K26/03 , B23K26/0622 , B23K26/354 , H01L21/321 , H01L21/302 , B23K101/40 , B23K103/00 , B23K103/08
CPC分类号： H01L21/02686 , B23K26/03 , B23K26/0622 , B23K26/0624 , B23K26/354 , H01L21/02074 , H01L21/02532 , H01L21/02587 , H01L21/02595 , H01L21/302 , H01L21/32115 , B23K2101/40 , B23K2103/08 , B23K2103/56
摘要： A method for planarizing excimer laser annealed (ELA) polycrystalline thin films via irradiation. The method includes providing an ELA thin film having an oxide and a top surface with a first surface roughness defined at least by a first plurality of protrusions. The ELA thin film is etched to substantially remove the oxide. At least a portion of the etched ELA thin film is then irradiated using a short-pulse duration excimer laser beam, to form an irradiated thin film with a second surface roughness defined at least by a second plurality of protrusions. The second surface roughness is lower than the first surface roughness.

2. 发明授权

US08859436B2 Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon 有权
标题翻译：均匀的大粒度和晶界位置操纵多晶薄膜半导体，其使用顺序侧向固化形成，并且在其上形成器件
公开(公告)号：US08859436B2
公开(公告)日：2014-10-14
申请号：US12402208
申请日：2009-03-11
申请人： James S. Im , Robert S. Sposili , Mark A. Crowder
发明人： James S. Im , Robert S. Sposili , Mark A. Crowder
IPC分类号： H01L21/02 , H01L21/20 , H01L27/12 , G03F7/20 , B23K26/06 , H01L29/04
CPC分类号： B23K26/0622 , B23K26/0626 , B23K26/066 , G03F7/70041 , G03F7/70725 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691 , H01L27/1285 , H01L27/1296 , H01L29/04
摘要： Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, masking portions of each fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.
摘要翻译：公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个受激准分子激光脉冲调制成预定的注量，以序列中的每个注量受控激光脉冲的部分掩蔽，缝隙以产生线图案化子束的注量控制脉冲序列，用注量控制的狭缝图案化子束的顺序照射非晶硅薄膜样品以实现其部分的熔化，并且可控地顺序地将样品相对于每个切口图案化的子束的注量控制脉冲，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。

3. 发明授权

US08617313B2 Line scan sequential lateral solidification of thin films 失效
标题翻译：线扫描顺序横向固化薄膜
公开(公告)号：US08617313B2
公开(公告)日：2013-12-31
申请号：US13547215
申请日：2012-07-12
申请人： James S. Im , Paul C. Van Der Wilt
发明人： James S. Im , Paul C. Van Der Wilt
IPC分类号： C30B1/04
CPC分类号： H01L21/02686 , B23K26/0738 , C30B13/00 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/02678 , H01L21/2026 , H01L27/1285 , H01L27/1296 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A system for preparing a semiconductor film, the system including: a laser source; optics to form a line beam, a stage to support a sample capable of translation; memory for storing a set of instructions, the instructions including irradiating a first region of the film with a first laser pulse to form a first molten zone, said first molten zone having a maximum width (Wmax) and a minimum width (Wmin), wherein the first molten zone crystallizes to form laterally grown crystals; laterally moving the film in the direction of lateral growth a distance greater than about one-half Wmax and less than Wmin; and irradiating a second region of the film with a second laser pulse to form a second molten zone, wherein the second molten zone crystallizes to form laterally grown crystals that are elongations of the crystals in the first region, wherein laser optics provide Wmax less than 2×Wmin.
摘要翻译：一种制备半导体膜的系统，该系统包括：激光源; 形成线束的光学元件，支撑能够进行平移的样本的阶段; 用于存储一组指令的存储器，所述指令包括用第一激光脉冲照射所述膜的第一区域以形成第一熔融区，所述第一熔融区具有最大宽度（Wmax）和最小宽度（Wmin），其中第一熔融区域结晶以形成横向生长的晶体; 在横向生长方向上横向移动薄膜的距离大于约一半Wmax且小于Wmin; 以及用第二激光脉冲照射所述膜的第二区域以形成第二熔融区，其中所述第二熔融区结晶以形成横向生长的晶体，所述晶体是所述第一区域中的晶体的伸长，其中激光光学提供Wmax小于2 ×Wmin。

4. 发明授权

US08507368B2 Single-shot semiconductor processing system and method having various irradiation patterns 有权
标题翻译：具有各种照射图案的单次半导体处理系统和方法
公开(公告)号：US08507368B2
公开(公告)日：2013-08-13
申请号：US13592843
申请日：2012-08-23
申请人： James S. Im
发明人： James S. Im
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02686 , B23K26/066 , H01L21/02 , H01L21/02422 , H01L21/02532 , H01L21/02675 , H01L21/02678 , H01L21/2026 , H01L21/324 , H01L27/1285 , H01L27/1296 , Y10T117/10 , Y10T117/1088
摘要： High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece is irradiated with a laser beam to melt and recrystallize target areas of the surface exposed to the laser beam. The laser beam is shaped into one or more pulses. The beam pulses have suitable dimensions and orientations to pattern the laser beam radiation so that the areas targeted by the beam have dimensions and orientations that are conductive to semiconductor recrystallization. The workpiece is mechanically translated along linear paths relative to the laser beam to process the entire surface of the workpiece at high speeds. Position sensitive triggering of a laser can be used to generate laser beam pulses to melt and recrystallize semiconductor material at precise locations on the surface of the workpiece while it is translated on a motorized stage.
摘要翻译：提供了在低温下沉积在衬底上的用于重结晶薄膜半导体的高通量系统和工艺。用激光束照射薄膜半导体工件以熔化暴露于激光束的表面的目标区域的再结晶。激光束成形为一个或多个脉冲。光束脉冲具有合适的尺寸和取向以对激光束辐射进行图案，使得由光束靶向的区域具有对半导体重结晶导电的尺寸和取向。工件相对于激光束沿着线性路径机械平移，以高速处理工件的整个表面。可以使用激光的位置敏感触发来产生激光束脉冲，以在工件表面上的精确位置处熔融和重结晶半导体材料，同时在激光平台上平移。

5. 发明申请

US20130201634A1 SINGLE-SCAN LINE-SCAN CRYSTALLIZATION USING SUPERIMPOSED SCANNING ELEMENTS 审中-公开
标题翻译：使用超级扫描元素的单扫描线扫描结晶
公开(公告)号：US20130201634A1
公开(公告)日：2013-08-08
申请号：US13701663
申请日：2010-12-30
申请人： James S. Im , Paul C. Van Der Wilt
发明人： James S. Im , Paul C. Van Der Wilt
IPC分类号： C30B28/08 , B23K26/067 , B23K26/00
CPC分类号： C30B28/08 , B23K26/067 , B23K26/354 , C30B1/08 , C30B13/24
摘要： The disclosure relates to methods and systems for single-scan line-scan crystallization using superimposed scanning elements. In one aspect, the method includes generating a plurality of laser beam pulses from a pulsed laser source, wherein each laser beam pulse has a fluence selected to melt the thin film and, upon cooling, induce crystallization in the thin film; directing a first laser beam pulse onto a thin film using a first beam path; advancing the thin film at a constant first scan velocity in a first direction; and deflecting a second laser beam pulse from the first beam path to a second beam path using an optical scanning element such that the deflection results in the film experiencing a second scan velocity of the laser beam pulses relative to the thin film, wherein the second scan velocity is less than the first scan velocity.
摘要翻译：本公开涉及使用叠加的扫描元件的单扫描线扫描结晶的方法和系统。在一个方面，该方法包括从脉冲激光源产生多个激光束脉冲，其中每个激光束脉冲具有选择的能量来熔化薄膜，并且在冷却时，在薄膜中引起结晶; 使用第一光束路径将第一激光束脉冲引导到薄膜上; 以恒定的第一扫描速度沿第一方向推进薄膜; 以及使用光学扫描元件将第二激光束脉冲从第一光束路径偏转到第二光束路径，使得偏转导致膜经历相对于薄膜的激光束脉冲的第二扫描速度，其中第二扫描速度小于第一扫描速度。

6. 发明申请

US20130105807A1 SYSTEMS AND METHODS FOR NON-PERIODIC PULSE PARTIAL MELT FILM PROCESSING 有权
标题翻译：非定期脉冲部分熔体薄膜处理的系统和方法
公开(公告)号：US20130105807A1
公开(公告)日：2013-05-02
申请号：US13505961
申请日：2010-11-02
申请人： James S. Im , Yikang Deng , Qiongying Hu , Ui-Jin Chung , Alexander B. Limanov
发明人： James S. Im , Yikang Deng , Qiongying Hu , Ui-Jin Chung , Alexander B. Limanov
IPC分类号： H01L21/02 , H01L21/67 , H01L29/786 , H01L29/04
CPC分类号： H01L21/02686 , B23K26/083 , B23K26/354 , B23K2101/40 , H01L21/02532 , H01L21/0268 , H01L21/02691 , H01L21/268 , H01L21/67115 , H01L21/707 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66765 , H01L29/78678
摘要： In one aspect, the present disclosure relates to a method of processing a thin film including, while advancing a thin film in a first selected direction, irradiating a first region of the thin film with a first laser pulse and a second laser pulse, each laser pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the first region re-solidifying and crystallizing to form a first crystallized region, and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, each pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the second region re-solidifying and crystallizing to form a second crystallized region, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse.
摘要翻译：一方面，本公开内容涉及一种处理薄膜的方法，包括当沿着第一选定方向前进薄膜时，用第一激光脉冲和第二激光脉冲照射薄膜的第一区域，每个激光器脉冲提供成形的束并且具有足以使薄膜部分熔融并且第一区域重新凝固和结晶以形成第一结晶区域的能量密度，并且用第三激光脉冲和第三激光脉冲照射薄膜的第二区域第四激光脉冲，每个脉冲提供成形光束并且具有足以部分熔化薄膜并且第二区域重新凝固和结晶以形成第二结晶区域的能量密度，其中第一激光脉冲和第二激光脉冲小于第一激光脉冲和第三激光脉冲之间的时间间隔的一半。

7. 发明授权

US08278659B2 Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon 失效
标题翻译：均匀的大粒度和晶界位置操纵多晶薄膜半导体，其使用顺序侧向固化形成，并且在其上形成器件
公开(公告)号：US08278659B2
公开(公告)日：2012-10-02
申请号：US12567414
申请日：2009-09-25
申请人： James S. Im , Robert S. Sposili , Mark A. Crowder
发明人： James S. Im , Robert S. Sposili , Mark A. Crowder
IPC分类号： H01L29/40
CPC分类号： B23K26/0622 , B23K26/0626 , B23K26/066 , G03F7/70041 , G03F7/70725 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691 , H01L27/1285 , H01L27/1296 , H01L29/04
摘要： Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homogenizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homogenized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.
摘要翻译：公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个受激准分子激光脉冲调制成预定的注量，将序列中的每个调制的激光脉冲均匀化在预定的平面中，均匀化注量控制的激光脉冲具有二维图案的狭缝，以产生线图案化的子束的注量控制脉冲序列，狭缝图案中的每个狭缝都足够窄，以防止在硅薄层的区域中诱发显着成核通过对应于狭缝的子束照射的薄膜样品，以可控流程控制的狭缝图案化子束的顺序照射非晶硅薄膜样品，以按照图案化子束的脉冲序列对应于每个注量控制的图案化子束脉冲的部分进行熔化，并可控地顺序地翻译一个关系相对于狭缝图案化子束的每个注量控制脉冲的样品的位置，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。

8. 发明申请

US20120034794A1 ENHANCING THE WIDTH OF POLYCRYSTALLINE GRAINS WITH MASK 审中-公开
标题翻译：用面膜增强多晶粒的宽度
公开(公告)号：US20120034794A1
公开(公告)日：2012-02-09
申请号：US13273687
申请日：2011-10-14
申请人： James S. Im
发明人： James S. Im
IPC分类号： H01L21/26 , B23K15/00
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/02532 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/04 , Y10S117/904
摘要： A system, method and masking arrangement are provided of enhancing the width of polycrystalline grains produced using sequential lateral solidification using a modified mask pattern is disclosed. One exemplary mask pattern employs rows of diamond or circular shaped areas in order to control the width of the grain perpendicular to the direction of primary crystallization.
摘要翻译：提供了一种系统，方法和掩蔽装置，其提供使用修改的掩模图案使用顺序横向固化提高的多晶晶粒的宽度。一个示例性的掩模图案采用行金刚石或圆形区域，以便控制垂直于一次结晶方向的晶粒的宽度。

9. 发明授权

US08034698B2 Systems and methods for inducing crystallization of thin films using multiple optical paths 有权
标题翻译：使用多个光路诱导薄膜结晶的系统和方法
公开(公告)号：US08034698B2
公开(公告)日：2011-10-11
申请号：US11873038
申请日：2007-10-16
申请人： James S. Im
发明人： James S. Im
IPC分类号： H01L21/36 , H01L21/20 , B23K26/06
CPC分类号： H01L21/02686 , C30B1/04 , G03F7/70041 , G03F7/70725 , H01L21/02595 , H01L21/0268 , H01L21/02683 , H01L21/2026 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： The present invention is directed to systems and methods for irradiating regions of a thin film sample(s) with laser beam pulses having different energy beam characteristics that are generated and delivered via different optical paths. An exemplary method includes generating laser beam pulses having energy beam characteristics, directing a first pulse onto a first optical path, modulating the pulse's energy beam characteristics, and irradiating at least a portion of a first region of the thin film with the pulse to induce crystallization of the portion of the first region. The method also includes directing a second pulse onto a second optical path, modulating the pulse's energy beam characteristics so as to be different from the energy beam characteristics of the first pulse, and irradiating at least a portion of a second region of the thin film with the second pulse to induce crystallization of the portion of the second region.
摘要翻译：本发明涉及用于通过具有不同能量束特性的激光束脉冲照射薄膜样品的区域的系统和方法，其通过不同的光路产生和传送。示例性方法包括产生具有能量束特性的激光束脉冲，将第一脉冲引导到第一光路上，调制脉冲的能量束特性，以及用该脉冲照射薄膜的第一区域的至少一部分以诱导结晶的第一区域的部分。该方法还包括将第二脉冲引导到第二光路上，调制脉冲的能量束特性以便与第一脉冲的能量束特性不同，并且将第二脉冲的第二区域的至少一部分与所述第二脉冲引起所述第二区域的所述部分的结晶。

10. 发明申请

US20110175099A1 LITHOGRAPHIC METHOD OF MAKING UNIFORM CRYSTALLINE SI FILMS 审中-公开
标题翻译：制作均匀晶体薄膜的平面方法
公开(公告)号：US20110175099A1
公开(公告)日：2011-07-21
申请号：US12919688
申请日：2009-03-02
申请人： James S. Im
发明人： James S. Im
IPC分类号： H01L29/04 , H01L21/26
CPC分类号： H01L29/78678 , H01L21/02532 , H01L21/02667 , H01L21/02686 , H01L27/1285 , H01L29/04 , H01L29/045 , H01L29/66765
摘要： Methods and devices are described relating to an electronic device positioned at a known location in a crystalline film including a crystalline semiconductor comprising a region of location controlled crystalline grains; a device located in the crystalline semiconductor film at a location that is defined relative to the location of the location controlled crystalline grains. The method includes irradiating at least a portion of a semiconductor film using two or more overlapping irradiation steps, wherein each irradiation step at least partially melts and laterally crystallizes a lithographically defined region the film to obtain a region of laterally grown crystalline grains having at least one long grain boundary that is perpendicular to the lateral growth length; identifying the location of at least one long grain boundary; and manufacturing an electronic device in the semiconductor film at a location that is defined relative to the location of the long grain boundary.
摘要翻译：描述了涉及位于结晶膜中的已知位置处的电子器件的方法和装置，所述晶体膜包括晶体半导体，所述晶体半导体包括位置控制的晶粒的区域; 位于结晶半导体膜中的位置，该位置相对于位置控制的晶粒的位置限定。该方法包括使用两个或更多个重叠照射步骤照射半导体膜的至少一部分，其中每个照射步骤至少部分地熔化并横向结晶光刻限定区域的膜，以获得具有至少一个的横向生长的晶粒的区域垂直于横向生长长度的长晶界; 识别至少一个长晶界的位置; 并且在相对于长晶界的位置限定的位置处在半导体膜中制造电子器件。

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