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1. 发明授权

US08721798B2 Methods for processing substrates in process systems having shared resources 有权
标题翻译：在具有共享资源的处理系统中处理衬底的方法
公开(公告)号：US08721798B2
公开(公告)日：2014-05-13
申请号：US12916462
申请日：2010-10-29
申请人： James P. Cruse , Dermot Cantwell , Ming Xu , Charles Hardy , Benjamin Schwarz , Kenneth S. Collins , Andrew Nguyen , Zhifeng Sui , Evans Lee
发明人： James P. Cruse , Dermot Cantwell , Ming Xu , Charles Hardy , Benjamin Schwarz , Kenneth S. Collins , Andrew Nguyen , Zhifeng Sui , Evans Lee
IPC分类号： B08B6/00 , C25F5/00
CPC分类号： H01L21/6719 , H01J37/32899
摘要： Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include providing a substrate to the first process chamber of the twin chamber processing system, wherein the first process chamber has a first processing volume that is independent from a second processing volume of the second process chamber; providing one or more processing resources from the shared processing resources to only the first processing volume of the first process chamber; and performing a process on the substrate in the first process chamber.
摘要翻译：本文提供了具有第一处理室和第二处理室以及共享处理资源的双室处理系统中处理基板的方法。在一些实施例中，方法可以包括向双室处理系统的第一处理室提供衬底，其中第一处理室具有独立于第二处理室的第二处理容积的第一处理容积; 将所述共享处理资源中的一个或多个处理资源提供给所述第一处理室的所述第一处理空间; 以及在所述第一处理室中的所述基板上进行处理。

2. 发明申请

US20110266256A1 METHODS FOR PROCESSING SUBSTRATES IN PROCESS SYSTEMS HAVING SHARED RESOURCES 有权
标题翻译：在具有共享资源的过程系统中处理基板的方法
公开(公告)号：US20110266256A1
公开(公告)日：2011-11-03
申请号：US12916462
申请日：2010-10-29
申请人： James P. Cruse , Dermot Cantwell , Ming Xu , Charles Hardy , Benjamin Schwarz , Kenneth S. Collins , Andrew Nguyen , Zhifeng Sui , Evans Lee
发明人： James P. Cruse , Dermot Cantwell , Ming Xu , Charles Hardy , Benjamin Schwarz , Kenneth S. Collins , Andrew Nguyen , Zhifeng Sui , Evans Lee
IPC分类号： C23F1/00 , C23C16/455
CPC分类号： H01L21/6719 , H01J37/32899
摘要： Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include providing a substrate to the first process chamber of the twin chamber processing system, wherein the first process chamber has a first processing volume that is independent from a second processing volume of the second process chamber; providing one or more processing resources from the shared processing resources to only the first processing volume of the first process chamber; and performing a process on the substrate in the first process chamber.
摘要翻译：本文提供了具有第一处理室和第二处理室以及共享处理资源的双室处理系统中处理基板的方法。在一些实施例中，方法可以包括向双室处理系统的第一处理室提供衬底，其中第一处理室具有独立于第二处理室的第二处理容积的第一处理容积; 将所述共享处理资源中的一个或多个处理资源提供给所述第一处理室的所述第一处理空间; 以及在所述第一处理室中的所述基板上进行处理。

3. 发明授权

US08496756B2 Methods for processing substrates in process systems having shared resources 有权
标题翻译：在具有共享资源的处理系统中处理衬底的方法
公开(公告)号：US08496756B2
公开(公告)日：2013-07-30
申请号：US12915240
申请日：2010-10-29
申请人： James P. Cruse , Dermot Cantwell , Ming Xu , Charles Hardy , Benjamin Schwarz , Kenneth S. Collins , Andrew Nguyen , Zhifeng Sui , Evans Lee
发明人： James P. Cruse , Dermot Cantwell , Ming Xu , Charles Hardy , Benjamin Schwarz , Kenneth S. Collins , Andrew Nguyen , Zhifeng Sui , Evans Lee
IPC分类号： B08B6/00
CPC分类号： H01L21/6719 , H01J37/32899
摘要： Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include flowing a process gas from a shared gas panel to a processing volume of the first process chamber and to a processing volume of the second process chamber; forming a first plasma in the first processing volume to process the first substrate and a second plasma to process the second substrate; monitoring the first processing volume and the second processing volume to determine if a process endpoint is reached in either volume; and either terminating the first and second plasma simultaneously when a first endpoint is reached; or terminating the first plasma when a first endpoint is reached in the first processing volume while continuing to provide the second plasma in the second processing volume until a second endpoint is reached.
摘要翻译：本文提供了具有第一处理室和第二处理室以及共享处理资源的双室处理系统中处理基板的方法。在一些实施例中，一种方法可以包括将处理气体从共用气体面板流动到第一处理室的处理容积和第二处理室的处理容积; 在所述第一处理体积中形成第一等离子体以处理所述第一基板和第二等离子体以处理所述第二基板; 监测第一处理量和第二处理量以确定任一体积中是否达到过程终点; 并且当达到第一端点时同时终止第一和第二等离子体; 或在第一处理容积中达到第一端点时终止第一等离子体，同时继续在第二处理容积中提供第二等离子体直到达到第二端点。

4. 发明申请

US20050115678A1 Magnet assembly for plasma containment 有权
标题翻译：用于等离子体容纳的磁体组件
公开(公告)号：US20050115678A1
公开(公告)日：2005-06-02
申请号：US10726008
申请日：2003-12-01
申请人： Anthony Vesci , Vince Kirchhoff , James Woodward , Kevin Hughes , Mark Pyl , Tetsuya Ishikawa , Evans Lee
发明人： Anthony Vesci , Vince Kirchhoff , James Woodward , Kevin Hughes , Mark Pyl , Tetsuya Ishikawa , Evans Lee
IPC分类号： H01J37/32 , H01L21/306
CPC分类号： H01J37/32623 , H01J37/3266 , Y10S156/916
摘要： A magnet assembly for a plasma process chamber has a hollow collar comprising a cross-section that is absent seams. The hollow collar has an open end face and a cap is provided to seal the open end face of the collar. A plurality of magnets are in the hollow collar, the magnets being insertable through the open end face. The collar is capable of being snap fitted onto the chamber wall. The magnet assembly can also comprise one or more of the collars such that the collars, when installed, form a substantially continuous ring about a chamber wall.
摘要翻译：用于等离子体处理室的磁体组件具有包括不存在接缝的横截面的中空轴环。空心轴环具有敞开的端面，并且设有盖以密封轴环的开口端面。多个磁体位于空心环中，磁体可通过开口端面插入。套环能够被卡扣到室壁上。磁体组件还可以包括一个或多个轴环，使得套环在安装时围绕室壁形成基本上连续的环。

5. 发明授权

US06432259B1 Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates 有权
标题翻译：等离子体反应器冷却的天花板，具有热隔离等离子体加热的微型气体分布板阵列
公开(公告)号：US06432259B1
公开(公告)日：2002-08-13
申请号：US09461682
申请日：1999-12-14
申请人： Hamid Noorbakhsh , Michael Welch , Siamak Salimian , Paul Luscher , Hongching Shan , Kaushik Vaidya , Jim Carducci , Evans Lee
发明人： Hamid Noorbakhsh , Michael Welch , Siamak Salimian , Paul Luscher , Hongching Shan , Kaushik Vaidya , Jim Carducci , Evans Lee
IPC分类号： H05H100
CPC分类号： H01J37/32522 , H01J37/321 , H01J37/3244
摘要： A plasma reactor embodying the invention includes a wafer support and a chamber enclosure member having an interior surface generally facing the wafer support. At least one miniature gas distribution plate for introducing a process gas into the reactor is supported on the chamber enclosure member and has an outlet surface which is a fraction of the area of the interior surface of said wafer support. A coolant system maintains the chamber enclosure member at a low temperature, and the miniature gas distribution plate is at least partially thermally insulated from the chamber enclosure member so that it is maintained at a higher temperature by plasma heating.
摘要翻译：体现本发明的等离子体反应器包括晶片支撑件和室外壳构件，其具有大致面向晶片支撑件的内表面。用于将工艺气体引入反应器的至少一个微型气体分配板被支撑在腔室外壳构件上，并且具有出口表面，该出口表面是所述晶片支撑件的内表面区域的一部分。冷却剂系统将室外壳构件保持在低温，并且微型气体分配板与腔室外壳构件至少部分热绝缘，使得其通过等离子体加热保持在较高温度。

6. 发明授权

US6076482A Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion 失效
标题翻译：具有径向向上倾斜天花板的薄膜处理等离子体反应器室，用于促进径向向外扩散
公开(公告)号：US6076482A
公开(公告)日：2000-06-20
申请号：US937347
申请日：1997-09-20
申请人： Ji Ding , James Carducci , Hongching Shan , Siamak Salimian , Evans Lee , Paul E. Luscher , Mike Welch
发明人： Ji Ding , James Carducci , Hongching Shan , Siamak Salimian , Evans Lee , Paul E. Luscher , Mike Welch
IPC分类号： H01J37/32 , C23C16/00 , C23F1/02 , H01L21/302
CPC分类号： H01J37/32458 , H01J37/321
摘要： The invention contours the chamber surface overlying semiconductor wafer being processed (i.e., the chamber ceiling) in such a way as to promote or optimize the diffusion of plasma ions from their regions of origin to other regions which would otherwise have a relative paucity of plasma ions. This is accomplished by providing a greater chamber volume over those areas of the wafer otherwise experiencing a shortage of plasma ions and a smaller chamber volume over those areas of the wafer experiencing a plentitude of plasma ions (e.g, due to localized plasma generation occurring over the latter areas). Thus, the ceiling is contoured to promote a plasma ion diffusion which best compensates for localized or non-uniform patterns in plasma ion generation typical of an inductively coupled source (e.g., an overhead inductive antenna). Specifically, the invention provides a lesser ceiling height (relative to the wafer surface) over regions in which plasma ions are generated or tend to congregate and a greater ceiling height in other regions. More specifically, in the case of an overlying inductive antenna where plasma ion density tends to fall off toward the wafer periphery, the ceiling contour is such that the ceiling height increases radially, i.e., toward the wafer periphery. This promotes or increases plasma ion diffusion toward the wafer periphery as a function of the rate at which the ceiling height increases radially.
摘要翻译：本发明轮廓地覆盖正在被处理的半导体晶片（即，室顶）上的腔表面，以促进或优化等离子体离子从其原始区域扩散到否则将具有相对低的等离子体离子的其它区域。这通过在晶片的那些区域上提供更大的室体积，否则经历等离子体离子的短缺，并且在经历等离子体离子的大量的晶片的那些区域（例如，由于在后面的区域）。因此，天花板的轮廓是促进等离子体离子扩散，其最好地补偿电感耦合源（例如，架空感应天线）典型的等离子体离子产生中的局部或非均匀图案。具体地说，本发明提供了在其中产生等离子体离子或倾向聚集的区域和在其它区域中具有更大的天花板高度的较小的天花板高度（相对于晶片表面）。更具体地说，在等离子体离子密度倾向于朝向晶片周边倾斜的上覆感应天线的情况下，天花板高度使天花板高度径向增加，即朝向晶片周边。这促进或增加等离子体离子向晶片周边的扩散，这是天花板高度径向增加的速率的函数。

7. 发明申请

US20080066785A1 METHOD OF REFURBISHING A MAGNET ASSEMBLY FOR PLASMA PROCESS CHAMBER 审中-公开
标题翻译：用于等离子体处理室的磁体组件的重新组装方法
公开(公告)号：US20080066785A1
公开(公告)日：2008-03-20
申请号：US11836092
申请日：2007-08-08
申请人： Anthony Vesci , Vince Kirchhoff , James Woodward , Kevin Hughes , Mark van der Pyl , Tetsuya Ishikawa , Evans Lee
发明人： Anthony Vesci , Vince Kirchhoff , James Woodward , Kevin Hughes , Mark van der Pyl , Tetsuya Ishikawa , Evans Lee
IPC分类号： B08B9/08
CPC分类号： H01J37/32623 , H01J37/3266 , Y10S156/916
摘要： A method of refurbishing a wall of a plasma process chamber which has a surface with a magnet assembly fitted thereon. The magnet assembly has an expandable hollow collar with a plurality of magnets inside. In the method, the diameter of the hollow collar of the magnet assembly is expanded to remove the hollow collar from the wall. The surface of the wall is cleaned. The hollow collar of the original magnet assembly, or of another magnet assembly, is then snap fitted back onto the surface of the wall.
摘要翻译：一种对具有安装在其上的磁体组件的表面的等离子体处理室的壁进行翻新的方法。磁体组件具有可扩展的空心套环，内部具有多个磁体。在该方法中，磁体组件的空心轴环的直径被膨胀以从壁上移除空心轴环。墙壁的表面被清洁。然后将原始磁体组件或另一个磁体组件的空心凸缘卡扣到壁的表面上。

8. 发明授权

US07294224B2 Magnet assembly for plasma containment 有权
标题翻译：用于等离子体容纳的磁体组件
公开(公告)号：US07294224B2
公开(公告)日：2007-11-13
申请号：US10726008
申请日：2003-12-01
申请人： Anthony Vesci , Vince Kirchhoff , James Woodward , Kevin Hughes , Mark van der Pyl , Tetsuya Ishikawa , Evans Lee
发明人： Anthony Vesci , Vince Kirchhoff , James Woodward , Kevin Hughes , Mark van der Pyl , Tetsuya Ishikawa , Evans Lee
IPC分类号： H01L21/00
CPC分类号： H01J37/32623 , H01J37/3266 , Y10S156/916
摘要： A magnet assembly for a plasma process chamber has a hollow collar comprising a cross-section that is absent seams. The hollow collar has an open end face and a cap is provided to seal the open end face of the collar. A plurality of magnets are in the hollow collar, the magnets being insertable through the open end face. The collar is capable of being snap fitted onto the chamber wall. The magnet assembly can also comprise one or more of the collars such that the collars, when installed, form a substantially continuous ring about a chamber wall.
摘要翻译：用于等离子体处理室的磁体组件具有包括不存在接缝的横截面的中空轴环。空心轴环具有敞开的端面，并且设有盖以密封轴环的开口端面。多个磁体位于空心环中，磁体可通过开口端面插入。套环能够被卡扣到室壁上。磁体组件还可以包括一个或多个轴环，使得套环在安装时围绕室壁形成基本上连续的环。

9. 发明授权

US5605637A Adjustable dc bias control in a plasma reactor 失效
标题翻译：等离子体反应器中可调直流偏压控制
公开(公告)号：US5605637A
公开(公告)日：1997-02-25
申请号：US356825
申请日：1994-12-15
申请人： Hongching Shan , Evans Lee , Robert Wu
发明人： Hongching Shan , Evans Lee , Robert Wu
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： H01J37/32834 , H01J37/32477 , H01J37/32623 , H01J37/32706
摘要： A plasma chamber, and a related method for its use, in which the direct current (dc) bias on a wafer-supporting cathode is reduced by including a plasma shield that blocks plasma from reaching a region of the chamber and thereby reduces the effective surface area of a grounded anode electrode. The plasma shield has a number of narrow slits through it, small enough to preclude the passage of plasma through the shield, but large enough to permit pumping of process gases through the shield. The dc bias is further controllable by installing a chamber liner of dielectric or other material to cover a selected portion of the inside walls of the chamber. The liner also facilitates cleaning of the chamber walls to remove deposits resulting from plasma polymerization.
摘要翻译：一种等离子体室及其使用的相关方法，其中通过包括阻挡等离子体到达腔室的区域的等离子体屏蔽来减小晶片支撑阴极上的直流（dc）偏压，从而降低有效表面接地阳极电极的面积。等离子体屏蔽件具有许多通过其的狭窄的狭缝，其足够小以阻止等离子体通过屏蔽件，但足够大以允许工艺气体通过屏蔽件泵送。通过安装电介质或其它材料的室衬套以覆盖室的内壁的选定部分，可以进一步控制直流偏压。内衬还有助于清洁室壁以去除由等离子体聚合产生的沉积物。

10. 发明申请

US20070091535A1 TEMPERATURE CONTROLLED SEMICONDUCTOR PROCESSING CHAMBER LINER 审中-公开
标题翻译：温度控制半导体加工室内衬
公开(公告)号：US20070091535A1
公开(公告)日：2007-04-26
申请号：US11561112
申请日：2006-11-17
申请人： Hamid Noorbakhsh , Siamak Salimian , Paul Luscher , James Carducci , Evans Lee , Kaushik Vaidya , Hongqing Shan , Michael Welch
发明人： Hamid Noorbakhsh , Siamak Salimian , Paul Luscher , James Carducci , Evans Lee , Kaushik Vaidya , Hongqing Shan , Michael Welch
IPC分类号： H01H47/26 , H01H47/32 , H01H50/12
CPC分类号： C23C16/45563 , C23C16/4401 , C23C16/4411 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01J2237/2001
摘要： A thermally controlled chamber liner comprising a passage having an inlet and outlet adapted to flow a fluid through the one or more fluid passages formed at least partially therein. The chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. The thermally controlled chamber liner maintains a predetermined temperature by running fluid from a temperature controlled, fluid source through the fluid passages. By maintaining a predetermined temperature, deposition of films on the chamber liner is discouraged and particulate generation due to stress cracking of deposited films is minimized.
摘要翻译：一种热控腔室衬套，其包括具有入口和出口的通道，其适于使流体流过至少部分地形成在其中的一个或多个流体通道。腔室衬套可以包括第一衬垫，第二衬垫或第一衬垫和第二衬垫两者。热控腔室衬里通过将流体从温度受控的流体源流过流体通道来维持预定的温度。通过保持预定的温度，阻止膜在室衬里上的沉积，并且由于沉积膜的应力开裂引起的颗粒的产生被最小化。

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