专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08039295B2 Organic inverter including surface-treated layer and method of manufacturing the same 失效
标题翻译：有机逆变器包括表面处理层及其制造方法
公开(公告)号：US08039295B2
公开(公告)日：2011-10-18
申请号：US12906457
申请日：2010-10-18
申请人： Jae Bon Koo , Kyung Soo Suh , Seong Hyun Kim
发明人： Jae Bon Koo , Kyung Soo Suh , Seong Hyun Kim
IPC分类号： H01L51/40
CPC分类号： H01L27/283 , H01L51/0545
摘要： An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.
摘要翻译：提供一种有机逆变器及其制造方法，其根据使用有机半导体在基板上制造逆变器电路时的位置来调节阈值电压。为了在同一衬底的相邻位置处形成耗尽负载晶体管和增强驱动晶体管，衬底的表面通过位置选择性地处理或通过自组装单层处理选择性地施加。因此，与使用晶体管尺寸效应的传统方法相比，更容易实现具有耗尽模式和增强模式的组合的D逆变器。此外，即使以相同的W / L比率也能够实现D逆变器，从而提高集成密度。也就是说，不需要增加W / L比来制造耗尽负载晶体管，从而提高集成密度。

2. 发明授权

US07842952B2 Organic inverter including surface-treated layer and method of manufacturing the same 失效
标题翻译：有机逆变器包括表面处理层及其制造方法
公开(公告)号：US07842952B2
公开(公告)日：2010-11-30
申请号：US11931461
申请日：2007-10-31
申请人： Jae Bon Koo , Kyung Soo Suh , Seong Hyun Kim
发明人： Jae Bon Koo , Kyung Soo Suh , Seong Hyun Kim
IPC分类号： H01L31/00
CPC分类号： H01L27/283 , H01L51/0545
摘要： An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.
摘要翻译：提供一种有机逆变器及其制造方法，其根据使用有机半导体在基板上制造逆变器电路时的位置来调节阈值电压。为了在同一衬底的相邻位置处形成耗尽负载晶体管和增强驱动晶体管，衬底的表面通过位置选择性地处理或通过自组装单层处理选择性地施加。因此，与使用晶体管尺寸效应的传统方法相比，更容易实现具有耗尽模式和增强模式的组合的D逆变器。此外，即使以相同的W / L比率也能够实现D逆变器，从而提高集成密度。也就是说，不需要增加W / L比来制造耗尽负载晶体管，从而提高集成密度。

3. 发明授权

US07687807B2 Inverter 失效
标题翻译：逆变器
公开(公告)号：US07687807B2
公开(公告)日：2010-03-30
申请号：US11834044
申请日：2007-08-06
申请人： Jae Bon Koo , Seong Hyun Kim , Kyung Soo Suh , Chan Hoe Ku , Sang Chul Lim , Jung Hun Lee
发明人： Jae Bon Koo , Seong Hyun Kim , Kyung Soo Suh , Chan Hoe Ku , Sang Chul Lim , Jung Hun Lee
IPC分类号： H01L31/00
CPC分类号： H01L27/281 , H01L27/283
摘要： Provided are a structure and fabricating method of a new inverter for controlling a threshold voltage of each location when an inverter circuit is manufactured using an organic semiconductor on a plastic substrate.In general, p-type organic semiconductor is stable. Accordingly, when the inverter is formed of only the p-type semiconductor, a D-inverter composed of a depletion load and an enhancement driver has large gains, wide swing width and low power consumption, which is more preferable than an E-inverter composed of an enhancement load and an enhancement driver. However, it is impossible to form a depletion transistor and an enhancement transistor on the same substrate while controlling them by locations.To overcome such a difficulty, the structure of the inverter in which a bottom gate organic semiconductor transistor showing enhancement type characteristics is used as a driver transistor, and a top gate organic semiconductor transistor showing depletion type characteristics is used as a load transistor, and a manufacturing method thereof are proposed. According to this structure, a passivation effect of an organic semiconductor may be additionally obtained by a second insulating layer and a second gate electrode material which are on top of the organic semiconductor, and a high degree of integration may also be improved.
摘要翻译：提供了当在塑料基板上使用有机半导体制造逆变器电路时，用于控制每个位置的阈值电压的新型逆变器的结构和制造方法。通常，p型有机半导体是稳定的。因此，当逆变器仅由p型半导体形成时，由耗尽负载和增强型驱动器构成的D逆变器具有大的增益，宽的摆幅宽度和低功耗，这比组成的E变换器更优选的增强负载和增强驱动器。然而，不可能在相同的衬底上形成耗尽晶体管和增强晶体管，同时通过位置来控制它们。为了克服这样的困难，将使用显示增强型特性的底栅有机半导体晶体管作为驱动晶体管的逆变器的结构和显示耗尽型特性的顶栅有机半导体晶体管用作负载晶体管，并且提出了其制造方法。根据该结构，可以通过位于有机半导体顶部的第二绝缘层和第二栅极电极材料另外获得有机半导体的钝化效果，并且还可以提高高集成度。

4. 发明授权

US08421610B2 Touch screen and method of operating the same 有权
标题翻译：触摸屏及其操作方法
公开(公告)号：US08421610B2
公开(公告)日：2013-04-16
申请号：US12534672
申请日：2009-08-03
申请人： Seongdeok Ahn , In-Kyu You , Jiyoung Oh , Chul Am Kim , Jae Bon Koo , Sang Seok Lee , Kyung Soo Suh , Kyoung Ik Cho
发明人： Seongdeok Ahn , In-Kyu You , Jiyoung Oh , Chul Am Kim , Jae Bon Koo , Sang Seok Lee , Kyung Soo Suh , Kyoung Ik Cho
IPC分类号： G08B6/00
CPC分类号： G06F3/044 , G06F3/016 , G06F3/045
摘要： Provided are a touch screen and a method of operating the same. The touch screen includes a detecting part, a control part, and a tactile feedback part. The detecting part detects object's approach or contact. The control part receives a signal of the detecting part to output a feedback signal. The tactile feedback part receives the feedback signal of the control part to provide a tactile feedback to a contact position using a magnetic force. The tactile feedback uses the magnetic force of a magnetic dipole.
摘要翻译：提供一种触摸屏及其操作方法。触摸屏包括检测部分，控制部分和触觉反馈部分。检测部件检测物体的接近或接触。控制部分接收检测部分的信号以输出反馈信号。触觉反馈部分接收控制部分的反馈信号，以使用磁力向接触位置提供触觉反馈。触觉反馈使用磁偶极子的磁力。

5. 发明授权

US07645398B2 Pressure sensor for electronic skin and fabrication method of pressure sensor for electronic skin 失效
标题翻译：电子皮肤压力传感器及电子皮肤压力传感器的制造方法
公开(公告)号：US07645398B2
公开(公告)日：2010-01-12
申请号：US11635067
申请日：2006-12-07
申请人： Seong-Hyun Kim , Taehyoung Zyung , Jae Bon Koo , Jung Hun Lee , Sang Chul Lim
发明人： Seong-Hyun Kim , Taehyoung Zyung , Jae Bon Koo , Jung Hun Lee , Sang Chul Lim
IPC分类号： H01B1/00 , G01D7/00 , G01L3/00
CPC分类号： G01L1/20 , G01L1/205
摘要： Provided is a pressure sensor for electronic skin. The pressure sensor measures pressure levels, and includes conductive rubber, electrodes, and elastic rubber. The conductive rubber has conductivity that increases when a pressure exceeding a predetermined pressure is applied thereto. The electrodes are formed on either side surface of the conductive rubber to measure current flowing through the conductive rubber. The elastic rubber is formed on a top surface of one of the electrodes to disperse pressure applied to the conductive rubber.
摘要翻译：提供了一种用于电子皮肤的压力传感器。压力传感器测量压力水平，包括导电橡胶，电极和弹性橡胶。当施加超过预定压力的压力时，导电橡胶具有增加的导电性。电极形成在导电橡胶的任一侧表面上，以测量流过导电橡胶的电流。弹性橡胶形成在一个电极的顶表面上以分散施加到导电橡胶上的压力。

6. 发明授权

US08362467B2 Composition for an organic dielectric 有权
标题翻译：有机电介质的组成
公开(公告)号：US08362467B2
公开(公告)日：2013-01-29
申请号：US12769316
申请日：2010-04-28
申请人： Yong-Young Noh , In-Kyu You , Jae Bon Koo , Soon Won Jung
发明人： Yong-Young Noh , In-Kyu You , Jae Bon Koo , Soon Won Jung
IPC分类号： H01L35/24
CPC分类号： H01L51/052 , C08F220/14 , C08F222/40 , C08F2220/1891 , C08K5/0025 , C08K5/3415 , C08L33/10 , H01L51/0541 , H01L51/0545 , C08F220/30
摘要： A composition for an organic dielectric, includes a compound represented by Formula 1 below; and a cross-linking agent, wherein, in Formula 1, R1 is any one of hydrogen, hydroxyl group, ester group, amide group, or alkyl group or alkoxy group of a carbon number of 1 to 12, R2 is selected from electrolytic functional groups, each of a and b is a positive integer, and the ratio of b to a (b/a) is larger than 0 and smaller than 99,
摘要翻译：一种有机电介质组合物，包括由下式1表示的化合物; 和交联剂，其中，在式1中，R 1为碳数为1至12的氢，羟基，酯基，酰胺基或烷基或烷氧基中的任一个，R 2选自电解功能 a，b分别为正整数，b与a（b / a）的比例大于0且小于99，

7. 发明申请

US20110272661A1 RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：电阻记忆体装置及其制造方法
公开(公告)号：US20110272661A1
公开(公告)日：2011-11-10
申请号：US12915495
申请日：2010-10-29
申请人： Yong Suk YANG , In-Kyu You , Jae Bon Koo , Soon Won Jung , Kang Dae Kim , Yong-Young Noh
发明人： Yong Suk YANG , In-Kyu You , Jae Bon Koo , Soon Won Jung , Kang Dae Kim , Yong-Young Noh
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： G11C13/0007 , G11C13/0009 , G11C13/0011 , G11C13/0014 , G11C13/0016 , H01L45/04 , H01L45/1233 , H01L45/14 , H01L45/1608
摘要： Provided are a resistive memory device and a method of fabricating the same. The resistive memory device comprises an electron channel layer formed by means of a swelling process and an annealing process. Thus, conductive nanoparticles are uniformly dispersed in the electron channel layer to improve reliability of the resistive memory device. According to the method, an electron channel layer is formed by means of a printing process, a swelling process, and an annealing process. Thus, fabrication time is reduced.
摘要翻译：提供了一种电阻式存储器件及其制造方法。电阻式存储器件包括通过膨胀工艺和退火工艺形成的电子通道层。因此，导电纳米粒子均匀分散在电子通道层中，以提高电阻式存储器件的可靠性。根据该方法，通过印刷工艺，溶胀工艺和退火工艺形成电子通道层。因此，制造时间缩短。

8. 发明申请

US20110136296A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110136296A1
公开(公告)日：2011-06-09
申请号：US12766953
申请日：2010-04-26
申请人： Jae Bon Koo , Seung Youl Kang , In-Kyu You
发明人： Jae Bon Koo , Seung Youl Kang , In-Kyu You
IPC分类号： H01L21/336 , H01L21/50
CPC分类号： H01L21/6835 , H01L21/84 , H01L24/83 , H01L24/93 , H01L2221/6835 , H01L2221/68359 , H01L2221/68368 , H01L2224/2919 , H01L2224/83192 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/01049 , H01L2924/01051 , H01L2924/01072 , H01L2924/0665 , H01L2924/07802 , H01L2924/00
摘要： Provided is a method for manufacturing a semiconductor device. The method includes: providing a first substrate where an active layer is formed on a buried insulation layer; forming a gate insulation layer on the active layer; forming a gate electrode on the gate insulation layer; forming a source/drain region on the active layer at both sides of the gate electrode; exposing the buried insulation layer around a thin film transistor (TFT) including the gate electrode and the source/drain region; forming an under cut at the bottom of the TFT by partially removing the buried insulation layer; and transferring the TFT on a second substrate.
摘要翻译：提供一种半导体器件的制造方法。该方法包括：提供在掩埋绝缘层上形成有源层的第一衬底; 在有源层上形成栅极绝缘层; 在栅极绝缘层上形成栅电极; 在栅极两侧的有源层上形成源/漏区; 将掩埋绝缘层暴露在包括栅电极和源/漏区的薄膜晶体管（TFT）周围; 通过部分去除掩埋绝缘层在TFT的底部形成底切; 以及在第二基板上转移TFT。

9. 发明申请

US20110092032A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20110092032A1
公开(公告)日：2011-04-21
申请号：US12766958
申请日：2010-04-26
申请人： Jae Bon Koo , Seung Youl Kang
发明人： Jae Bon Koo , Seung Youl Kang
IPC分类号： H01L21/336
CPC分类号： H01L29/78603 , H01L21/84
摘要： Provided is a manufacturing methods of a semiconductor device. The methods includes: forming an active layer on a first substrate; bonding a top surface of the active layer with a second substrate and separating the active layer from the first substrate; forming conductive impurity regions corresponding to source and drain regions of the active layer bonded on the second substrate; bonding a third substrate on a bottom surface of the active layer and removing the second substrate; and forming a gate electrode on a top between the conductive impurity regions of the active layer bonded on the third substrate and forming source and drain electrodes on the conductive impurity regions.
摘要翻译：提供半导体器件的制造方法。所述方法包括：在第一基板上形成有源层; 将有源层的顶表面与第二衬底结合并将有源层与第一衬底分离; 形成对应于结合在所述第二基板上的所述有源层的源区和漏区的导电杂质区; 将第三衬底接合在有源层的底表面上并移除第二衬底; 以及在结合在第三基板上的有源层的导电杂质区之间的顶部上形成栅电极，并在导电杂质区上形成源电极和漏电极。

10. 发明申请

US20120141665A1 METHOD OF AND APPARATUS FOR FORMING A METAL PATTERN 审中-公开
标题翻译：用于形成金属图案的方法和装置
公开(公告)号：US20120141665A1
公开(公告)日：2012-06-07
申请号：US13309807
申请日：2011-12-02
申请人： Tae-Youb KIM , Kang-Jun Baeg , In-Kyu You , Minseok Kim , Jae Bon Koo
发明人： Tae-Youb KIM , Kang-Jun Baeg , In-Kyu You , Minseok Kim , Jae Bon Koo
IPC分类号： H05K3/02 , B05C5/00
CPC分类号： B41F17/26 , B05C1/0808
摘要： Provided are methods of and apparatuses for forming a metal pattern. In the method, an initiator and a metal pattern are sequentially combined on a previously-formed bonding agent pattern improving adhesion and/or junction properties between the substrate and the metal. The bonding agent pattern may be formed using a reverse offset printing method. The metal pattern may be formed using an electroless electrochemical plating method. The metal pattern can be formed with improved uniformity in thickness and planar area.
摘要翻译：提供了用于形成金属图案的方法和装置。在该方法中，引发剂和金属图案依次组合在预先形成的粘合剂图案上，从而提高基材和金属之间的粘合性和/或结合性。粘合剂图案可以使用反胶版印刷法形成。金属图案可以使用无电镀电镀法形成。可以形成具有改善的厚度均匀性和平坦面积的金属图案。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式