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US07687807B2 Inverter 失效
标题翻译：逆变器
公开(公告)号：US07687807B2
公开(公告)日：2010-03-30
申请号：US11834044
申请日：2007-08-06
申请人： Jae Bon Koo , Seong Hyun Kim , Kyung Soo Suh , Chan Hoe Ku , Sang Chul Lim , Jung Hun Lee
发明人： Jae Bon Koo , Seong Hyun Kim , Kyung Soo Suh , Chan Hoe Ku , Sang Chul Lim , Jung Hun Lee
IPC分类号： H01L31/00
CPC分类号： H01L27/281 , H01L27/283
摘要： Provided are a structure and fabricating method of a new inverter for controlling a threshold voltage of each location when an inverter circuit is manufactured using an organic semiconductor on a plastic substrate.In general, p-type organic semiconductor is stable. Accordingly, when the inverter is formed of only the p-type semiconductor, a D-inverter composed of a depletion load and an enhancement driver has large gains, wide swing width and low power consumption, which is more preferable than an E-inverter composed of an enhancement load and an enhancement driver. However, it is impossible to form a depletion transistor and an enhancement transistor on the same substrate while controlling them by locations.To overcome such a difficulty, the structure of the inverter in which a bottom gate organic semiconductor transistor showing enhancement type characteristics is used as a driver transistor, and a top gate organic semiconductor transistor showing depletion type characteristics is used as a load transistor, and a manufacturing method thereof are proposed. According to this structure, a passivation effect of an organic semiconductor may be additionally obtained by a second insulating layer and a second gate electrode material which are on top of the organic semiconductor, and a high degree of integration may also be improved.
摘要翻译：提供了当在塑料基板上使用有机半导体制造逆变器电路时，用于控制每个位置的阈值电压的新型逆变器的结构和制造方法。通常，p型有机半导体是稳定的。因此，当逆变器仅由p型半导体形成时，由耗尽负载和增强型驱动器构成的D逆变器具有大的增益，宽的摆幅宽度和低功耗，这比组成的E变换器更优选的增强负载和增强驱动器。然而，不可能在相同的衬底上形成耗尽晶体管和增强晶体管，同时通过位置来控制它们。为了克服这样的困难，将使用显示增强型特性的底栅有机半导体晶体管作为驱动晶体管的逆变器的结构和显示耗尽型特性的顶栅有机半导体晶体管用作负载晶体管，并且提出了其制造方法。根据该结构，可以通过位于有机半导体顶部的第二绝缘层和第二栅极电极材料另外获得有机半导体的钝化效果，并且还可以提高高集成度。

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