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    • 2. 发明申请
    • EUV collector debris management
    • EUV收集器碎片管理
    • US20060091109A1
    • 2006-05-04
    • US10979945
    • 2004-11-01
    • William PartloRichard SandstromIgor FomenkovAlexander ErshovWilliam OldhamWilliam MarxOscar Hemberg
    • William PartloRichard SandstromIgor FomenkovAlexander ErshovWilliam OldhamWilliam MarxOscar Hemberg
    • H01L21/306B08B6/00B44C1/22
    • B08B7/00
    • A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
    • 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置,所述EUV等离子体源材料包括将形成蚀刻化合物的材料,所述等离子体源材料在所选择的中心波长周围的带内产生EUV光,包括:EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面,该反射表面包含至少一层,该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料,等离子体源材料与蚀刻剂源材料形成蚀刻化合物,该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。
    • 5. 发明申请
    • Laser output beam wavefront splitter for bandwidth spectrum control
    • US20050286598A1
    • 2005-12-29
    • US10875662
    • 2004-06-23
    • Richard SandstromDaniel BrownAlexander ErshovIgor FomenkovWilliam Partlo
    • Richard SandstromDaniel BrownAlexander ErshovIgor FomenkovWilliam Partlo
    • G03F7/20H01S3/08H01S3/097H01S3/10H01S3/1055H01S3/13H01S3/22
    • H01S3/0812G03F7/70025G03F7/70575H01S3/08059H01S3/097H01S3/1055H01S3/1305
    • An apparatus and method for providing bandwidth control in a narrow band short pulse duration gas discharge laser output light pulse beam producing system, producing a beam comprising laser output light pulses at a selected pulse repetition rate, is disclosed which may comprise a dispersive bandwidth selection optic selecting at least one center wavelength for each pulse determined at least in part by the angle of incidence of the laser light pulse beam containing the respective pulse on the dispersive wavelength selection optic; a tuning mechanism operative to select at least one angle of incidence of the a laser light pulse beam containing the respective pulse upon the dispersive center wavelength selection optic; the tuning mechanism comprising a plurality of incidence angle selection elements each defining an angle of incidence for a different spatially separated but not temporally separated portion of the laser light pulse to return from the dispersive center wavelength selection optic a laser light pulse comprising a plurality of spatially separated but not temporally separated portions, each portion having one of at least two different selected center wavelengths. The tuning mechanism may comprise a temporal angle of incidence selection element defining an angle of incidence for different temporally separated portions of the pulse to return from the dispersive bandwidth selection optic a laser beam comprising a plurality of temporally separated portions of each pulse, each temporally separated portion of each pulse having one of at least two different selected center wavelengths. The tuning mechanism may comprise a plurality of spatial incidence angle selection elements each defining an angle of incidence for a spatially separated but not temporally separated portion of the laser light pulse, and a plurality of temporal angle of incidence selection elements each defining at least a first angle of incidence for at least a first temporally separated portion of each spatially separated but not temporally separated portion of the pulse and a second angle of incidence for a second temporally separated but not spatially separated portion of each spatially separated portion of the pulse.
    • 9. 发明申请
    • EUV light source
    • US20050199829A1
    • 2005-09-15
    • US10900839
    • 2004-07-27
    • William PartloNorbert BoweringAlexander ErshovIgor FomenkovDavid MyersIan OliverJohn ViatellaRobert Jacques
    • William PartloNorbert BoweringAlexander ErshovIgor FomenkovDavid MyersIan OliverJohn ViatellaRobert Jacques
    • G03F7/20G21K1/06H01J35/20H05G2/00H01J65/04
    • G03F7/70033B82Y10/00G03F7/70175G03F7/70916G21K1/062G21K2201/061G21K2201/065G21K2201/067H05G2/003H05G2/005H05G2/006H05G2/008
    • An apparatus and method for EUV light production is disclosed which may comprise a laser produced plasma (“LPP”) extreme ultraviolet (“EUV”) light source control system comprising a target delivery system adapted to deliver moving plasma initiation targets and an EUV light collection optic having a focus defining a desired plasma initiation site, comprising: a target tracking and feedback system comprising: at least one imaging device providing as an output an image of a target stream track, wherein the target stream track results from the imaging speed of the camera being too slow to image individual plasma formation targets forming the target stream imaged as the target stream track; a stream track error detector detecting an error in the position of the target stream track in at least one axis generally perpendicular to the target stream track from a desired stream track intersecting the desired plasma initiation site. At least one target crossing detector may be aimed at the target track and detecting the passage of a plasma formation target through a selected point in the target track. A drive laser triggering mechanism utilizing an output of the target crossing detector to determine the timing of a drive laser trigger in order for a drive laser output pulse to intersect the plasma initiation target at a selected plasma initiation site along the target track at generally its closest approach to the desired plasma initiation site. A plasma initiation detector may be aimed at the target track and detecting the location along the target track of a plasma initiation site for a respective target. An intermediate focus illuminator may illuminate an aperture formed at the intermediate focus to image the aperture in the at least one imaging device. The at least one imaging device may be at least two imaging devices each providing an error signal related to the separation of the target track from the vertical centerline axis of the image of the intermediate focus based upon an analysis of the image in the respective one of the at least two imaging devices. A target delivery feedback and control system may comprise a target delivery unit; a target delivery displacement control mechanism displacing the target delivery mechanism at least in an axis corresponding to a first displacement error signal derived from the analysis of the image in the first imaging device and at least in an axis corresponding to a second displacement error signal derived from the analysis of the image in the second imaging device.
    • 10. 发明申请
    • EUV LIGHT SOURCE COLLECTOR EROSION MITIGATION
    • EUV光源收集器腐蚀减轻
    • US20060289808A1
    • 2006-12-28
    • US11238828
    • 2005-09-28
    • William PartloAlexander ErshovIgor Fomenkov
    • William PartloAlexander ErshovIgor Fomenkov
    • H01J61/62
    • G03F7/70916B82Y10/00G01J1/429G03F7/70033G03F7/70175G03F7/70983G21K1/062G21K2201/067H05G2/003
    • An EUV light source collector erosion mitigation system and method is disclosed which may comprise a collector comprising a multilayered mirror collector comprising a collector outer surface composed of a capping material subject to removal due to a removing interaction with materials created in an EUV light-creating plasma; a replacement material generator positioned to deliver replacement material comprising the capping material to the collector outer surface at a rate sufficient to replace the capping material removed due to the removing interaction. The replacement material generator may comprise a plurality of replacement material generators positioned to respectively deliver replacement material to a selected portion of the collector outer surface, which may comprise a sputtering mechanism sputtering replacement capping material onto the collector outer surface.
    • 公开了一种EUV光源收集器侵蚀缓解系统和方法,其可以包括收集器,其包括多层反射镜收集器,该多层反射镜收集器包括由封装材料构成的收集器外表面,该封盖材料由于与EUV发光等离子体中产生的材料的去除相互作用而被去除 ; 替代材料发生器定位成将包含封盖材料的替换材料以足以代替由于去除相互作用而去除的封盖材料的速率传送到收集器外表面。 替代材料发生器可以包括多个替换材料发生器,其被定位成分别将替代材料递送到集电器外表面的选定部分,其可以包括溅射机构将溅射替换封盖材料涂覆到集电器外表面上。