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1. 发明申请

US20120292527A1 Filter for Material Supply Apparatus 有权
标题翻译：过滤器材料供应设备
公开(公告)号：US20120292527A1
公开(公告)日：2012-11-22
申请号：US13112784
申请日：2011-05-20
申请人： Igor V. Fomenkov , William N. Partlo , Georgiy O. Vaschenko , William Oldham
发明人： Igor V. Fomenkov , William N. Partlo , Georgiy O. Vaschenko , William Oldham
IPC分类号： H05H1/46
CPC分类号： B01D29/56 , B22F3/105 , H05G2/006 , H05G2/008 , H05H1/46
摘要： A filter is used in a target material supply apparatus and includes a sheet having a first flat surface and a second opposing flat surface, and a plurality of through holes. The first flat surface is in fluid communication with a reservoir that holds a target mixture that includes a target material and non-target particles. The through holes extend from the second flat surface and are fluidly coupled at the second flat surface to an orifice of a nozzle. The sheet has a surface area that is exposed to the target mixture, the exposed surface area being at least a factor of one hundred less than an exposed surface area of a sintered filter having an equivalent transverse extent to that of the sheet.
摘要翻译：在目标材料供给装置中使用过滤器，并且包括具有第一平面和第二相对平坦面的片，以及多个通孔。第一平坦表面与储存包含目标材料和非目标颗粒的目标混合物的储存器流体连通。通孔从第二平坦表面延伸并且在第二平坦表面处流体耦合到喷嘴的孔口。片材具有暴露于目标混合物的表面积，暴露的表面积比具有与片材相当的横向程度的烧结过滤器的暴露表面积至少要低一百倍。

2. 发明授权

US07650443B1 Methods and apparatus for allocating access to a host device buffer 有权
标题翻译：用于分配对主机设备缓冲区的访问的方法和装置
公开(公告)号：US07650443B1
公开(公告)日：2010-01-19
申请号：US10896562
申请日：2004-07-22
申请人： Edward T. Cavanagh, Jr. , William Oldham
发明人： Edward T. Cavanagh, Jr. , William Oldham
IPC分类号： G06F3/00 , G06F13/12
CPC分类号： G06F13/4059
摘要： Methods and apparatus for allocating access to a buffer of a host device to buffer data transferred between a controller of the host device and one or more remote devices are disclosed. The host device is configured to couple to each of the one or more remote devices through one or more corresponding dedicated lanes. Buffer access is allocated by determining, for each of one or more remote devices coupled to the host device, a number of dedicated lanes between the host device and each of the one or more remote devices and allocating access to the buffer of the host device for each of the one or more remote devices responsive to the determined number of dedicated lanes.
摘要翻译：公开了用于分配对主机设备的缓冲器的访问以缓冲在主机设备的控制器和一个或多个远程设备之间传送的数据的方法和装置。主机设备被配置为通过一个或多个相应的专用车道耦合到一个或多个远程设备中的每一个。通过针对与主机设备耦合的一个或多个远程设备中的每一个确定主机设备与一个或多个远程设备中的每一个之间的专用通道的数量来分配缓冲区访问，并且分配对主机设备的缓冲器的访问以供所述一个或多个远程设备中的每一个响应于所确定的专用车道数量。

3. 发明申请

US20050111119A1 Double hidden flexure microactuator for phase mirror array 失效
标题翻译：用于相位镜阵列的双重隐形弯曲微型致动器
公开(公告)号：US20050111119A1
公开(公告)日：2005-05-26
申请号：US10952709
申请日：2004-09-28
申请人： William Oldham , Yijian Chen , Yashesh Shroff
发明人： William Oldham , Yijian Chen , Yashesh Shroff
IPC分类号： G02B26/08
CPC分类号： G03F7/70283 , G02B26/0841 , G03F7/70291
摘要： Disclosed is an actuator for a phase mirror array including a) a first support member extending perpendicularly from a surface of a mirror, b) a plurality of flexures engaging the first support member with the flexures being generally parallel to the surface of the mirror, c) second and third support members engaging opposing ends of the flexures, at least one of the second and third support members functioning as a first electrode, and d) a second electrode positioned in spaced parallel relationship with the flexures, whereby a voltage impressed across the first electrode and the second electrode causes displacement of the supported mirror on the support structure. The second electrode and one of the flexures can have undulating surfaces which mate in a comb relationship.
摘要翻译：公开了一种用于相位镜阵列的致动器，包括：a）从反射镜的表面垂直延伸的第一支撑件，b）与第一支撑构件接合的多个挠曲件，其中弯曲部大致平行于镜子的表面，c ）第二和第三支撑构件，其接合所述挠曲件的相对端部，所述第二和第三支撑构件中的至少一个用作第一电极，以及d）与所述挠曲件间隔开平行关系的第二电极，第一电极和第二电极引起支撑反射镜在支撑结构上的位移。第二电极和其中一个挠曲件可以具有以梳子关系相配合的起伏表面。

4. 发明授权

US09029813B2 Filter for material supply apparatus of an extreme ultraviolet light source 有权
标题翻译：过滤器用于极紫外光源的材料供应装置
公开(公告)号：US09029813B2
公开(公告)日：2015-05-12
申请号：US13112784
申请日：2011-05-20
申请人： Igor V. Fomenkov , William N. Partlo , Georgiy O. Vaschenko , William Oldham
发明人： Igor V. Fomenkov , William N. Partlo , Georgiy O. Vaschenko , William Oldham
IPC分类号： G01J3/10 , B22F3/105 , B01D29/56
CPC分类号： B01D29/56 , B22F3/105 , H05G2/006 , H05G2/008 , H05H1/46
摘要： A filter is used in a target material supply apparatus and includes a sheet having a first flat surface and a second opposing flat surface, and a plurality of through holes. The first flat surface is in fluid communication with a reservoir that holds a target mixture that includes a target material and non-target particles. The through holes extend from the second flat surface and are fluidly coupled at the second flat surface to an orifice of a nozzle. The sheet has a surface area that is exposed to the target mixture, the exposed surface area being at least a factor of one hundred less than an exposed surface area of a sintered filter having an equivalent transverse extent to that of the sheet.
摘要翻译：在目标材料供给装置中使用过滤器，并且包括具有第一平面和第二相对平坦面的片，以及多个通孔。第一平坦表面与储存包含目标材料和非目标颗粒的目标混合物的储存器流体连通。通孔从第二平坦表面延伸并且在第二平坦表面处流体耦合到喷嘴的孔口。片材具有暴露于目标混合物的表面积，暴露的表面积比具有与片材相当的横向程度的烧结过滤器的暴露表面积至少要低一百倍。

5. 发明授权

US08075732B2 EUV collector debris management 失效
标题翻译： EUV收集器碎片管理
公开(公告)号：US08075732B2
公开(公告)日：2011-12-13
申请号：US10979945
申请日：2004-11-01
申请人： William N. Partlo , Richard L. Sandstrom , Igor V. Fomenkov , Alexander I. Ershov , William Oldham , William F. Marx , Oscar Hemberg
发明人： William N. Partlo , Richard L. Sandstrom , Igor V. Fomenkov , Alexander I. Ershov , William Oldham , William F. Marx , Oscar Hemberg
IPC分类号： C23F1/00
CPC分类号： B08B7/00
摘要： A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
摘要翻译：可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置，所述EUV等离子体源材料包括将形成蚀刻化合物的材料，所述等离子体源材料在所选择的中心波长周围的带内产生EUV光，包括：EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面，该反射表面包含至少一层，该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料，等离子体源材料与蚀刻剂源材料形成蚀刻化合物，该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。蚀刻剂源材料可以包含卤素或卤素化合物。蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。还可以存在离子加速剂将离子朝向反射表面加速。离子可以包括蚀刻剂源材料。该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。

6. 发明申请

US20060091109A1 EUV collector debris management 失效
标题翻译： EUV收集器碎片管理
公开(公告)号：US20060091109A1
公开(公告)日：2006-05-04
申请号：US10979945
申请日：2004-11-01
申请人： William Partlo , Richard Sandstrom , Igor Fomenkov , Alexander Ershov , William Oldham , William Marx , Oscar Hemberg
发明人： William Partlo , Richard Sandstrom , Igor Fomenkov , Alexander Ershov , William Oldham , William Marx , Oscar Hemberg
IPC分类号： H01L21/306 , B08B6/00 , B44C1/22
CPC分类号： B08B7/00
摘要： A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
摘要翻译：可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置，所述EUV等离子体源材料包括将形成蚀刻化合物的材料，所述等离子体源材料在所选择的中心波长周围的带内产生EUV光，包括：EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面，该反射表面包含至少一层，该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料，等离子体源材料与蚀刻剂源材料形成蚀刻化合物，该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。蚀刻剂源材料可以包含卤素或卤素化合物。蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。还可以存在离子加速剂将离子朝向反射表面加速。离子可以包括蚀刻剂源材料。该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。

7. 发明授权

US07141806B1 EUV light source collector erosion mitigation 有权
标题翻译： EUV光源收集器侵蚀减轻
公开(公告)号：US07141806B1
公开(公告)日：2006-11-28
申请号：US11237649
申请日：2005-09-27
申请人： William N. Partlo , Alexander I. Ershov , Igor V. Fomenkov , David W. Myers , William Oldham
发明人： William N. Partlo , Alexander I. Ershov , Igor V. Fomenkov , David W. Myers , William Oldham
IPC分类号： G01J1/00
CPC分类号： G21K1/062 , B82Y10/00 , H05G2/003 , H05G2/005
摘要： An EUV light source collector erosion mitigation method and apparatus for a collector comprising a multilayered mirror collector comprising a collector outer surface composed of a capping material subject to removal due to a removing interaction with materials created in an EUV light-creating plasma, is disclosed which may comprise including within an EUV plasma source material a replacement material. The replacement material may comprise the same material as the capping material of the multilayered mirror. The replacement material may comprise a material that is essentially transparent to light in a selected band of EUV light, e.g., a spectrum of EUV light generated in a plasma of a plasma source material. The replacement material may comprise a material not susceptible to being etched by an etching material used to remove deposited plasma source material from the collector, e.g., a halogen etchant.
摘要翻译：公开了一种用于收集器的EUV光源收集器侵蚀缓解方法和装置，其包括多层反射镜收集器，其包括由由与在EUV发光等离子体中产生的材料的去除相互作用而被去除的封盖材料组成的收集器外表面。可以包括在EUV等离子体源材料内包括替换材料。替代材料可以包括与多层反射镜的封盖材料相同的材料。替代材料可以包括对EUV光的选定频带中的光基本上透明的材料，例如在等离子体源材料的等离子体中产生的EUV光的光谱。替代材料可以包括不易被蚀刻材料蚀刻的材料，用于从集电体例如卤素蚀刻剂去除沉积的等离子体源材料。

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