会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明授权
    • Systems and methods for mapping arbitrary logic functions into synchronous embedded memories
    • 将任意逻辑功能映射到同步嵌入式存储器中的系统和方法
    • US07444613B1
    • 2008-10-28
    • US11408762
    • 2006-04-21
    • Gordon ChiuDeshanand SinghValavan ManohararajahStephen Brown
    • Gordon ChiuDeshanand SinghValavan ManohararajahStephen Brown
    • G06F17/50
    • G06F17/5054
    • Systems and methods are provided for mapping logic functions from logic elements (“LEs”) into synchronous embedded memory blocks (“EMBs”) of programmable logic devices (“PLDs”). This technique increases the amount of logic that can fit into the PLD. Where area savings are significant, smaller PLDs may be selected to implement a particular circuit. One aspect of the invention relates to methods for identifying sequential cones of logic that may be mapped into synchronous EMBs. After the sequential logic cones are identified for mapping into a synchronous EMB, the logic cone may be selected, expanded, restructured, and retimed, as necessary, to implement the mapping. Another aspect of the invention relates to techniques for handling architectural restrictions of synchronous EMBs, such as the inability to implement the asynchronous behavior of synchronous logic.
    • 提供了将逻辑元件(“LE”)的逻辑功能映射到可编程逻辑器件(“PLD”)的同步嵌入式存储器块(“EMB”)的系统和方法。 这种技术增加了可以适应PLD的逻辑量。 如果区域节省很大,则可以选择较小的PLD来实现特定的电路。 本发明的一个方面涉及用于识别可以映射到同步EMB中的逻辑顺序锥的方法。 在确定用于映射到同步EMB中的顺序逻辑锥之后,可以根据需要选择,扩展,重构和重新定时,以实现映射。 本发明的另一方面涉及用于处理同步EMB的架构限制的技术,诸如不能实现同步逻辑的异步行为。
    • 10. 发明授权
    • Methods for calibrating memory interface circuitry
    • 校准存储器接口电路的方法
    • US08565033B1
    • 2013-10-22
    • US13149562
    • 2011-05-31
    • Valavan ManohararajahIvan BlunnoRyan FungNavid Azizi
    • Valavan ManohararajahIvan BlunnoRyan FungNavid Azizi
    • G11C7/00
    • G11C7/1066G11C5/04G11C7/1093G11C29/022G11C29/023G11C29/028G11C2207/2254
    • Integrated circuits may communicate with off-chip memory. Such types of integrated circuits may include memory interface circuitry that is used to interface with the off-chip memory. The memory interface circuitry may be calibrated using a procedure that includes read calibration, write leveling, read latency tuning, and write calibration. Read calibration may serve to ensure proper gating of data strobe signals and to center the data strobe signals with respect to read data signals. Write leveling ensures that the data strobe signals are aligned to system clock signals. Read latency tuning serves to adjust read latency to ensure optimum read performance. Write calibration may serve to center the data strobe signals with respect to write data signals. These calibration operations may be used to calibrate memory systems supporting a variety of memory communications protocols.
    • 集成电路可以与片外存储器通信。 这种类型的集成电路可以包括用于与片外存储器进行接口的存储器接口电路。 可以使用包括读取校准,写入调平,读取延迟调整和写入校准的过程校准存储器接口电路。 读取校准可用于确保数据选通信号的适当门控,并使数据选通信号相对于读取数据信号居中。 写入调平确保数据选通信号与系统时钟信号对齐。 读延迟调整用于调整读取延迟,以确保最佳读取性能。 写入校准可以用于使数据选通信号相对于写数据信号居中。 这些校准操作可用于校准支持各种存储器通信协议的存储器系统。