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    • 5. 发明授权
    • Method of manufacturing single crystal of silicon
    • 制造单晶硅的方法
    • US5882398A
    • 1999-03-16
    • US786340
    • 1997-01-23
    • Susumu SonokawaToshiro HayashiAtsushi IwasakiTomohiko Ohta
    • Susumu SonokawaToshiro HayashiAtsushi IwasakiTomohiko Ohta
    • C30B15/00C30B15/10C30B15/30C30B29/06H01L21/208C30B15/22
    • C30B29/06C30B15/10C30B15/305Y10S117/917
    • A single crystal of silicon is manufactured in accordance with the Czochralski method. A magnetic field is applied to a quartz crucible filled with silicon melt. Subsequently, a single crystal of silicon is pulled in a state in which no magnetic field is applied to the crucible, so as to obtain a single crystal of silicon. Therefore, the inner surface of a quartz crucible becomes very unlikely to deteriorate, and when the inner surface deteriorates, the deteriorated inner surface is restored. Accordingly, it is possible to manufacture a single crystal of silicon having a large diameter without generating a dislocation in the crystal. Moreover, even when a single crystal of silicon having a large diameter is manufactured, a larger number of single crystals of silicon can be manufactured from a single quartz crucible, and the pulling apparatus can be operated over a longer period of time using a single quartz crucible, thereby making it possible to manufacture a longer single crystal.
    • 按照Czochralski法制造单晶硅。 将磁场施加到填充有硅熔体的石英坩埚。 随后,在没有磁场施加到坩埚的状态下拉出单晶硅,从而获得单晶硅。 因此,石英坩埚的内表面变得不太可能劣化,并且当内表面变坏时,内部表面变质。 因此,可以制造具有大直径的单晶硅,而不会在晶体中产生位错。 此外,即使制造具有大直径的单晶硅,可以从单个石英坩埚制造更多数量的单晶硅,并且可以使用单个石英在较长时间内操作拉制装置 坩埚,从而可以制造更长的单晶。
    • 7. 发明申请
    • IMAGING APPARATUS
    • 成像设备
    • US20080159712A1
    • 2008-07-03
    • US11956995
    • 2007-12-14
    • Toshiro HayashiNobuyuki KodamaYoshio Kusui
    • Toshiro HayashiNobuyuki KodamaYoshio Kusui
    • H04N5/00
    • H04N5/2251H04N5/772H04N5/781H04N5/85
    • Disclosed is an imaging apparatus that includes a table rotating device rotationally drives a disc-shaped recording medium; a pickup device capable of recording an information signal of an image corresponding to light from a subject; and an external case having a disc enclosure portion and the pickup device. The imaging apparatus further includes a disc cover rotatably attached to the external case; and a cover opening/closing mechanism capable of locking and unlocking the disc cover. In the imaging apparatus, the cover opening/closing mechanism includes a fixed claw integrally provided with the disc cover and a locking claw rotatably supported on one of the external case and a case-side member fixed to the external case, the fixed claw protruding in a direction substantially perpendicular to a main surface of the disc cover, and a convex portion protruding toward the disc cover provided at a front end of the fixed claw.
    • 公开了一种成像装置,其包括旋转驱动盘状记录介质的工作台旋转装置; 能够记录与来自被摄体的光对应的图像的信息信号的拾取装置; 以及具有盘外壳部分和拾取装置的外壳。 成像装置还包括可旋转地附接到外壳的盘盖; 以及能够锁定和解锁盘盖的盖打开/关闭机构。 在成像装置中,盖打开/关闭机构包括一体地设置有盘盖的固定爪和可旋转地支撑在外壳的一个上的锁定爪和固定到外壳的壳体侧构件,固定爪突出于 大致垂直于所述盘盖的主表面的方向,以及朝向设置在所述固定爪的前端的所述盘盖突出的凸部。
    • 8. 发明授权
    • Equipment for producing silicon single crystals
    • 硅单晶生产设备
    • US5725661A
    • 1998-03-10
    • US699719
    • 1996-07-01
    • Izumi FusegawaToshiro HayashiTomohiko OhtaMasayuki Arai
    • Izumi FusegawaToshiro HayashiTomohiko OhtaMasayuki Arai
    • C30B15/00C30B15/26C30B15/30C30B29/06H01L21/208C30B35/00
    • C30B15/305C30B15/26Y10S117/917Y10T117/10Y10T117/1008
    • An equipment for producing silicon single crystals based on an MCZ method, which enables an operator to be protected from dangerous exposure to magnetic field without involving increase in the size of the silicon single crystal production equipment. In the silicon single crystal production equipment based on the MCZ method, a growth furnace control apparatus for control of a pulling apparatus is located away from the pulling apparatus by a predetermined distance so that the intensity of magnetic field immediately close to the growth furnace control apparatus can become 300 gausses or less. A monitoring camera for observing the growing condition of the silicon single crystal is mounted to a window 5a of a growth furnace to be operatively connected to a monitor of the growth furnace control apparatus and to cause the growth furnace control apparatus to control the pulling apparatus on a remote control basis. In an experimental example, an accumulated magnetic field exposure value immediately close to the growth furnace control apparatus can be suppressed to less than 30% of its allowable maximum value and therefore the operator can continuously work highly safely.
    • 一种基于MCZ方法生产硅单晶的设备,其能够使操作者免受危险暴露于磁场而不涉及增加硅单晶生产设备的尺寸。 在基于MCZ方法的硅单晶生产设备中,用于控制拉制装置的生长炉控制装置远离牵引装置远离预定距离,使得紧邻生长炉控制装置的磁场强度 可以变成300高斯或更少。 将用于观察硅单晶生长状态的监视摄像机安装在生长炉的窗口5a上,以可操作地连接到生长炉控制装置的监视器,并使成长炉控制装置控制拉制装置 遥控基础。 在实验例中,可以将紧接着生长炉控制装置的累积磁场暴露值抑制在其允许最大值的30%以下,因此操作者可以连续高效地工作。