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1. 发明授权

US5882398A Method of manufacturing single crystal of silicon 失效
标题翻译：制造单晶硅的方法
公开(公告)号：US5882398A
公开(公告)日：1999-03-16
申请号：US786340
申请日：1997-01-23
申请人： Susumu Sonokawa , Toshiro Hayashi , Atsushi Iwasaki , Tomohiko Ohta
发明人： Susumu Sonokawa , Toshiro Hayashi , Atsushi Iwasaki , Tomohiko Ohta
IPC分类号： C30B15/00 , C30B15/10 , C30B15/30 , C30B29/06 , H01L21/208 , C30B15/22
CPC分类号： C30B29/06 , C30B15/10 , C30B15/305 , Y10S117/917
摘要： A single crystal of silicon is manufactured in accordance with the Czochralski method. A magnetic field is applied to a quartz crucible filled with silicon melt. Subsequently, a single crystal of silicon is pulled in a state in which no magnetic field is applied to the crucible, so as to obtain a single crystal of silicon. Therefore, the inner surface of a quartz crucible becomes very unlikely to deteriorate, and when the inner surface deteriorates, the deteriorated inner surface is restored. Accordingly, it is possible to manufacture a single crystal of silicon having a large diameter without generating a dislocation in the crystal. Moreover, even when a single crystal of silicon having a large diameter is manufactured, a larger number of single crystals of silicon can be manufactured from a single quartz crucible, and the pulling apparatus can be operated over a longer period of time using a single quartz crucible, thereby making it possible to manufacture a longer single crystal.
摘要翻译：按照Czochralski法制造单晶硅。将磁场施加到填充有硅熔体的石英坩埚。随后，在没有磁场施加到坩埚的状态下拉出单晶硅，从而获得单晶硅。因此，石英坩埚的内表面变得不太可能劣化，并且当内表面变坏时，内部表面变质。因此，可以制造具有大直径的单晶硅，而不会在晶体中产生位错。此外，即使制造具有大直径的单晶硅，可以从单个石英坩埚制造更多数量的单晶硅，并且可以使用单个石英在较长时间内操作拉制装置坩埚，从而可以制造更长的单晶。

2. 发明授权

US06565822B1 Epitaxial silicon wafer, method for producing the same and subtrate for epitaxial silicon wafer 有权
标题翻译：外延硅晶片，其制造方法和外延硅晶片的减渣
公开(公告)号：US06565822B1
公开(公告)日：2003-05-20
申请号：US09646713
申请日：2000-09-21
申请人： Ryoji Hoshi , Susumu Sonokawa , Masahiro Sakurada , Tomohiko Ohta , Izumi Fusegawa
发明人： Ryoji Hoshi , Susumu Sonokawa , Masahiro Sakurada , Tomohiko Ohta , Izumi Fusegawa
IPC分类号： C09B3326
CPC分类号： C30B29/06 , C30B15/203
摘要： An epitaxial silicon wafer, which has no projections having a size of 100 nm or more and a height of 5 nm or more on an epitaxial layer, and a method for producing an epitaxial silicon wafer, wherein a single crystal ingot containing no I-region is grown when a silicon single crystal is grown by the CZ method, and an epitaxial layer is deposited on a silicon wafer sliced from the single crystal ingot and containing no I-region for the entire surface. An epitaxial wafer of high quality with no projection-like surface distortion observed as particles on an epi-layer surface is provided by forming a wafer having no I-region for the entire surface from a single crystal and depositing an epitaxial layer thereon, and a single crystal having no I-region for entire plane is produced with good yield and high productivity, thereby improving productivity of epi-wafers and realizing cost reduction.
摘要翻译：在外延层上没有尺寸为100nm以上且高度为5nm以上的外延硅晶片和外延硅晶片的制造方法，其中，不含I区域的单晶锭当通过CZ法生长硅单晶时生长，并且在从单晶锭切片的硅晶片上沉积外延层，并且在整个表面上不含有I区。通过从单晶形成整个表面没有I区的晶片并在其上沉积外延层来提供高品质的外延晶片，其没有观察到作为外延表面上的颗粒的投射状表面变形，以良好的产率和高生产率生产不具有整个平面的I区的单晶，从而提高外延片的生产率并实现成本降低。

3. 发明授权

US07201801B2 Heater for manufacturing a crystal 有权
标题翻译：加热器制造水晶
公开(公告)号：US07201801B2
公开(公告)日：2007-04-10
申请号：US10503721
申请日：2003-09-08
申请人： Susumu Sonokawa , Ryoji Hoshi , Wataru Sato , Tomohiko Ohta
发明人： Susumu Sonokawa , Ryoji Hoshi , Wataru Sato , Tomohiko Ohta
IPC分类号： C30B35/00
CPC分类号： C30B15/30 , C30B15/14 , C30B30/04 , C30B35/00 , Y10S117/90 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： The present invention provides a heater for manufacturing a crystal by the Czochralski method comprising at least terminal portions supplied with current and a heat generating portion by resistance heating, and being arranged so as to surround a crucible containing a raw material melt, wherein the heater has a uniform heat generation distribution to the raw material melt after deformation while in use during crystal manufacture. It is thus possible to prevent hindrance of monocrystallization and unstable crystal quality caused by ununiform temperature in the raw material melt due to deformation of the shape of the heater's heat generating portion while in use during crystal manufacture.
摘要翻译：本发明提供了一种通过切克劳斯基法制造晶体的加热器，其至少包括通过电阻加热供给电流的端子部分和发热部分，并且被布置成围绕包含原料熔体的坩埚，其中加热器具有在晶体制造期间在使用时在变形后对原料熔体均匀发热分布。因此，在晶体制造时，由于加热器的发热部的形状的变形，能够防止因原料熔融体的不均匀温度引起的单晶化和不稳定的晶体质量的阻碍。

4. 发明申请

US20050081779A1 Heater for crystal formation, apparatus for forming crystal and method for forming crystal 有权
标题翻译：晶体形成用加热器，晶体形成装置及晶体形成方法
公开(公告)号：US20050081779A1
公开(公告)日：2005-04-21
申请号：US10503721
申请日：2003-09-08
申请人： Susumu Sonokawa , Ryoji Hoshi , Wataru Sato , Tomohiko Ohta
发明人： Susumu Sonokawa , Ryoji Hoshi , Wataru Sato , Tomohiko Ohta
IPC分类号： C30B15/14 , C30B29/06 , C30B35/00 , C30B15/00 , C30B13/00 , C30B21/04 , C30B21/06 , C30B27/02 , C30B28/08 , C30B28/10 , C30B30/04
CPC分类号： C30B15/30 , C30B15/14 , C30B30/04 , C30B35/00 , Y10S117/90 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： The present invention provides a heater for manufacturing a crystal by the Czochralski method comprising at least terminal portions supplied with current and a heat generating portion by resistance heating, and being arranged so as to surround a crucible containing a raw material melt, wherein the heater has a uniform heat generation distribution to the raw material melt after deformation while in use during crystal manufacture. It is thus possible to prevent hindrance of monocrystallization and unstable crystal quality caused by ununiform temperature in the raw material melt due to deformation of the shape of the heater's heat generating portion while in use during crystal manufacture.
摘要翻译：本发明提供了一种通过切克劳斯基法制造晶体的加热器，其至少包括通过电阻加热供给电流的端子部分和发热部分，并且被布置成围绕包含原料熔体的坩埚，其中加热器具有在晶体制造期间在使用时在变形后对原料熔体均匀发热分布。因此，在晶体制造时，由于加热器的发热部的形状的变形，能够防止因原料熔融体的不均匀温度引起的单晶化和不稳定的晶体质量的阻碍。

5. 发明授权

US5972106A Device and method for producing single crystal 失效
标题翻译：单晶制造装置及方法
公开(公告)号：US5972106A
公开(公告)日：1999-10-26
申请号：US776776
申请日：1997-02-10
申请人： Tomohiko Ohta , Susumu Sonokawa , Satoshi Soeta , Yoshihiro Kodama
发明人： Tomohiko Ohta , Susumu Sonokawa , Satoshi Soeta , Yoshihiro Kodama
IPC分类号： C30B15/14 , C30B15/20 , C30B29/40
CPC分类号： C30B29/40 , C30B15/14 , C30B15/206 , C30B29/06 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A device and method for producing single crystals by the Czohralski method can control the temperature distribution and thermal history of single crystals to improve the production efficiency and quality of single crystals. The device includes a cylinder coaxially surrounding a single crystal pulling rod, having an upper end airtightly connected to the ceiling of a pulling chamber and a lower end close to the surface of a melt in a crucible. A heat insulating element is attached to the lower end of the cylinder, and is surrounded by a surface of the crystal, the inside wall of the crucible and the surface of the melt. The heat insulating element is sized to occupy 30-95% by volume of the space above the melt, and the space has a height corresponding to the radius of the crystal. The heat insulator has a sufficient heat insulating effect, so that even if the diameter of single crystals is increased, the pulling speed of the crystals does not need to be lowered, the uniformity of temperature of the entire crystal-melt interface is improved, and the ratio of single crystallization is not reduced.
摘要翻译： PCT No.PCT / JP95 / 02514 Sec。 371日期1997年2月10日 102（e）日期1997年2月10日PCT提交1995年12月8日PCT公布。公开号WO97 / 21853 日期：1997年6月19日Czohralski法制备单晶的装置和方法可以控制单晶的温度分布和热历史，提高单晶的生产效率和质量。该装置包括同轴地围绕单晶拉杆的圆筒，其具有气密地连接到拉动室的顶部的上端和靠近坩埚中的熔体表面的下端。绝热元件附着在圆筒的下端，被坩埚的表面，坩埚的内壁和熔体的表面所包围。绝热元件的尺寸设定为占据熔体上方空间的30-95％（体积），并且该空间的高度对应于晶体的半径。绝热体具有充分的隔热效果，即使单晶的直径增大，也不需要降低晶体的拉伸速度，提高整个晶体熔融界面的温度均匀性，单一结晶的比例不降低。

6. 发明授权

US5725661A Equipment for producing silicon single crystals 失效
标题翻译：硅单晶生产设备
公开(公告)号：US5725661A
公开(公告)日：1998-03-10
申请号：US699719
申请日：1996-07-01
申请人： Izumi Fusegawa , Toshiro Hayashi , Tomohiko Ohta , Masayuki Arai
发明人： Izumi Fusegawa , Toshiro Hayashi , Tomohiko Ohta , Masayuki Arai
IPC分类号： C30B15/00 , C30B15/26 , C30B15/30 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/305 , C30B15/26 , Y10S117/917 , Y10T117/10 , Y10T117/1008
摘要： An equipment for producing silicon single crystals based on an MCZ method, which enables an operator to be protected from dangerous exposure to magnetic field without involving increase in the size of the silicon single crystal production equipment. In the silicon single crystal production equipment based on the MCZ method, a growth furnace control apparatus for control of a pulling apparatus is located away from the pulling apparatus by a predetermined distance so that the intensity of magnetic field immediately close to the growth furnace control apparatus can become 300 gausses or less. A monitoring camera for observing the growing condition of the silicon single crystal is mounted to a window 5a of a growth furnace to be operatively connected to a monitor of the growth furnace control apparatus and to cause the growth furnace control apparatus to control the pulling apparatus on a remote control basis. In an experimental example, an accumulated magnetic field exposure value immediately close to the growth furnace control apparatus can be suppressed to less than 30% of its allowable maximum value and therefore the operator can continuously work highly safely.
摘要翻译：一种基于MCZ方法生产硅单晶的设备，其能够使操作者免受危险暴露于磁场而不涉及增加硅单晶生产设备的尺寸。在基于MCZ方法的硅单晶生产设备中，用于控制拉制装置的生长炉控制装置远离牵引装置远离预定距离，使得紧邻生长炉控制装置的磁场强度可以变成300高斯或更少。将用于观察硅单晶生长状态的监视摄像机安装在生长炉的窗口5a上，以可操作地连接到生长炉控制装置的监视器，并使成长炉控制装置控制拉制装置遥控基础。在实验例中，可以将紧接着生长炉控制装置的累积磁场暴露值抑制在其允许最大值的30％以下，因此操作者可以连续高效地工作。

7. 发明授权

US07521334B2 Method for producing direct bonded wafer and direct bonded wafer 有权
标题翻译：直接接合晶片和直接接合晶片的制造方法
公开(公告)号：US07521334B2
公开(公告)日：2009-04-21
申请号：US11659283
申请日：2005-11-29
申请人： Norihiro Kobayashi , Toru Ishizuka , Tomohiko Ohta , Hiroji Aga , Yasuo Nagaoka
发明人： Norihiro Kobayashi , Toru Ishizuka , Tomohiko Ohta , Hiroji Aga , Yasuo Nagaoka
IPC分类号： H01L21/30
CPC分类号： H01L21/2007 , H01L21/76254
摘要： A method for producing a direct bonded wafer comprising: forming a thermal oxide film or a CVD oxide film on a surface of at least one of a bond wafer and a base wafer, and bonding the wafer to the other wafer via the oxide film; subsequently thinning the bond wafer to prepare a bonded wafer; and thereafter conducting a process of annealing the bonded wafer under an atmosphere including any one of an inert gas, hydrogen and a mixed gas of an inert gas and hydrogen so that the oxide film between the bond wafer and the base wafer is removed to bond the bond wafer directly to the base wafer. Thereby, there is provided a method for producing a direct bonded wafer in which generation of voids is reduced, and a direct bonded wafer with a low void count.
摘要翻译：一种直接接合晶片的制造方法，包括：在接合晶片和基底晶片中的至少一个的表面上形成热氧化膜或CVD氧化膜，并且经由所述氧化膜将所述晶片接合到所述另一方的晶片; 随后使接合晶片变薄以制备接合晶片; 然后在惰性气体，氢气和惰性气体与氢气的混合气体中的任何一种的气氛下进行退火接合晶片的工序，从而去除接合晶片和基底晶片之间的氧化膜，将晶片直接接合到基底晶片。因此，提供了一种制造空穴产生减少的直接接合晶片的方法和具有低空隙率的直接接合晶片。

8. 发明申请

US20080274479A1 Assay of Ubiquitinization of Synoviolin and Use Thereof in Screening 审中-公开
标题翻译：滑膜蛋白泛素化检测及其筛选用途
公开(公告)号：US20080274479A1
公开(公告)日：2008-11-06
申请号：US11628412
申请日：2005-06-02
申请人： Toshihiro Nakajima , Sayumi Toriyama , Tadayuki Yamadera , Tomohiko Ohta , Satoshi Yamasaki , Naoko Yagishita , Lei Zhang , Rie Ikeda , Takeshi Sasaki , Tetsuya Amano
发明人： Toshihiro Nakajima , Sayumi Toriyama , Tadayuki Yamadera , Tomohiko Ohta , Satoshi Yamasaki , Naoko Yagishita , Lei Zhang , Rie Ikeda , Takeshi Sasaki , Tetsuya Amano
IPC分类号： G01N33/53
CPC分类号： C12Q1/25 , G01N2333/9015 , G01N2500/02
摘要： The present invention relates to an assay method for determining a auto-ubiquitination activity of synoviolin, comprising reacting synoviolin and ubiquitin in a reaction system containing them and determining an amount of ubiquitin binding to synoviolin, to a method of screening a substance capable of regulating such an activity, and to a kit for auto-ubiquitination assay of synoviolin.
摘要翻译：本发明涉及一种用于测定滑膜蛋白的自身泛素化活性的测定方法，包括使滑膜蛋白和泛素在含有它们的反应体系中反应并确定与滑膜蛋白结合的泛素的量，以筛选能够调节这种蛋白质的物质的方法一种活性，以及用于滑膜蛋白自动泛素化测定的试剂盒。

9. 发明授权

US07179330B2 Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer 有权
标题翻译：硅单晶，硅单晶和硅晶片的制造方法
公开(公告)号：US07179330B2
公开(公告)日：2007-02-20
申请号：US10510695
申请日：2003-04-23
申请人： Izumi Fusegawa , Sadayuki Okuni , Nobuaki Mitamura , Tomohiko Ohta , Nobuo Katuoka
发明人： Izumi Fusegawa , Sadayuki Okuni , Nobuaki Mitamura , Tomohiko Ohta , Nobuo Katuoka
IPC分类号： C30B15/00
CPC分类号： C30B15/22 , C30B15/36 , C30B29/06 , Y10T117/1032
摘要： The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, wherein a temperature variation at a surface of a silicon melt is kept at ±5° C. or less at least for a period from a point of bringing the tip end of a seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of .
摘要翻译：本发明是通过Czochralski法制造单晶硅的方法，而不进行Dash Necking方法，其中硅熔体表面的温度变化至少保持在±5℃或更低的时间点使晶种的尖端与硅熔体接触以转移以拉动单晶。因此，在不使用Dash Necking法的情况下，通过Czochralski法生长硅单晶的方法中，可以提高生长不含位错的单晶的成功率，同时可以增加直径大的重硅单晶，其中，即使在生长晶体取向为<110>的硅单晶的情况下，也可以生长恒定直径部分的直径超过200mm。

10. 发明申请

US20050160966A1 Method for producing silicon single crystal and, silicon single crystal and silicon wafer 有权
标题翻译：硅单晶和硅单晶硅晶片的制造方法
公开(公告)号：US20050160966A1
公开(公告)日：2005-07-28
申请号：US10510695
申请日：2003-04-23
申请人： Izumi Fusegawa , Sadayuki Okuni , Nobuaki Mitamura , Tomohiko Ohta , Nobuo Katuoka
发明人： Izumi Fusegawa , Sadayuki Okuni , Nobuaki Mitamura , Tomohiko Ohta , Nobuo Katuoka
IPC分类号： C30B15/00 , C30B15/36 , C30B29/06 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/22 , C30B15/36 , C30B29/06 , Y10T117/1032
摘要： The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, wherein a temperature variation at a surface of a silicon melt is kept at ±5° C. or less at least for a period from a point of bringing the tip end of a seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of
摘要翻译：本发明是通过Czochralski法制造单晶硅的方法，而不进行Dash Necking方法，其中硅熔体表面的温度变化至少保持在±5℃以下，使晶种的尖端与硅熔体接触以转移以拉动单晶。因此，在不使用Dash Necking法的情况下，通过Czochralski法生长硅单晶的方法中，可以提高生长不含位错的单晶的成功率，同时可以增加直径大的重硅单晶，其中，即使在生长晶体取向<110°的硅单晶的情况下，也可以生长恒定直径部分的直径超过200mm，

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