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    • 4. 发明授权
    • Magnetoresistance (MR) read elements having an active shield
    • 磁阻(MR)读取元件具有主动屏蔽
    • US08305715B2
    • 2012-11-06
    • US11965532
    • 2007-12-27
    • Daniele MauriNeil Smith
    • Daniele MauriNeil Smith
    • G11B5/39
    • B82Y25/00G01R33/093G01R33/098G11B5/3912
    • Read elements and associated methods of fabrication are disclosed. A read element as described herein includes a magnetoresistance (MR) sensor sandwiched between first and second shields. The read element uses the first shield as an active portion of the MR sensor. Instead of implementing an AFM pinning layer in the MR sensor, the first shield takes the place of the AFM pinning layer. The first shield is orthogonally coupled to the pinned layer through an orthogonal coupling layer, such as a thin layer of AFM material. Through this structure, the magnetic moment of the first shield pins the magnetic moment of the pinned layer transverse to the ABS of the read element, and an AFM pinning layer is not needed.
    • 公开了读取元件和相关联的制造方法。 如本文所述的读取元件包括夹在第一和第二屏蔽之间的磁阻(MR)传感器。 读取元件使用第一屏蔽作为MR传感器的有效部分。 代替在MR传感器中实现AFM钉扎层,第一个屏蔽取代了AFM钉扎层。 第一屏蔽层通过正交耦合层(例如AFM材料的薄层)与被钉扎层正交耦合。 通过这种结构,第一屏蔽的磁矩将钉扎层的磁矩横向于读取元件的ABS,并且不需要AFM钉扎层。