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1. 发明申请

US20070097558A1 Current-perpendicular-to-the-plane spin-valve (CPP-SV) sensor with current-confining apertures concentrated near the sensing edge 失效
标题翻译：电流垂直于平面的自旋阀（CPP-SV）传感器，电流限制孔径集中在感应边缘附近
公开(公告)号：US20070097558A1
公开(公告)日：2007-05-03
申请号：US11268275
申请日：2005-11-03
申请人： Matthew Carey , Jeffrey Childress , Stefan Maat , Neil Smith
发明人： Matthew Carey , Jeffrey Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3906
摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an insulating layer with at least one aperture that confines the flow of sense current through the active region. The apertures are located closer to the sensing edge of the sensor than to the back edge of the sensor. The aperture (or apertures) are patterned by e-beam lithography, which enables the number, size and location of the apertures to be precisely controlled. The insulating layer may be located inside the electrically conductive nonmagnetic spacer layer, or outside of the magnetically active layers of the spin-valve. More than one insulating layer may be included in the stack to define conductive current paths where the apertures of the insulating layers overlap. The apertures are filled with electrically conductive material, typically the same material as that used for the spacer layer.
摘要翻译：电流 - 垂直于平面的自旋阀（CPP-SV）磁阻传感器具有绝缘层，其具有至少一个限制感应电流通过有源区域的孔径。孔比传感器的后边缘更靠近传感器的感测边缘。孔（或孔）通过电子束光刻被图案化，这使得能够精确地控制孔的数量，尺寸和位置。绝缘层可以位于导电非磁性间隔层内部，或位于自旋阀的磁性有效层的外部。堆叠中可以包括多于一个绝缘层，以限定绝缘层的孔重叠的导电电流路径。孔被填充有导电材料，通常与用于间隔层的材料相同。

2. 发明申请

US20070253119A1 CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH ANTIPARALLEL-FREE LAYER STRUCTURE AND LOW CURRENT-INDUCED NOISE 失效
标题翻译：具有无阻抗层结构和低电流感应噪声的电流 - 平面（CPP）磁传感器
公开(公告)号：US20070253119A1
公开(公告)日：2007-11-01
申请号：US11380625
申请日：2006-04-27
申请人： Matthew Carey , Jeffrey Childress , Stefan Maat , Neil Smith
发明人： Matthew Carey , Jeffrey Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL1), a second free ferromagnetic layer (FL2), and an antiparallel (AP) coupling (APC) layer that couples FL1 and FL2 together antiferromagnetically with the result that FL1 and FL2 have substantially antiparallel magnetization directions and rotate together in the presence of a magnetic field. The thicknesses of FL1 and FL2 are chosen to obtain the desired net free layer magnetic moment/area for the sensor, and the thickness of FL1 is preferably chosen to be greater than the spin-diffusion length of the electrons in the FL1 material to maximize the bulk spin-dependent scattering of electrons and thus maximize the sensor signal. The CPP sensor operates specifically with the conventional sense current (opposite the electron current) directed from the pinned ferromagnetic layer to the APF structure, which results in suppression of current-induced noise.
摘要翻译：电流垂直平面（CPP）磁阻传感器具有作为自由层的反向平行自由（APF）结构和施加的偏置或感测电流的特定方向。（APF）结构具有第一自由铁磁（FL1），第二自由铁磁层（FL2）和反FL-FL2与FL2耦合的反并联（AP）耦合（APC）层，其结果是FL1和FL2具有实质上反平行磁化方向，并且在存在磁场的情况下一起旋转。选择FL1和FL2的厚度以获得用于传感器的期望的净自由层磁矩/面积，并且FL1的厚度优选地选择为大于FL1材料中的电子的自旋扩散长度以使电子的体自旋依赖散射，从而使传感器信号最大化。 CPP传感器与从钉扎铁磁层引导到APF结构的常规感测电流（与电子电流相反）特别地工作，这导致电流引起的噪声的抑制。

3. 发明申请

US20060023369A1 Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by a ferromagnetic multilayer 有权
标题翻译：非常磁阻传感器，通过铁磁多层垂直磁偏置
公开(公告)号：US20060023369A1
公开(公告)日：2006-02-02
申请号：US10903173
申请日：2004-07-30
申请人： Matthew Carey , Bruce Gurney , Stefan Maat , Neil Smith
发明人： Matthew Carey , Bruce Gurney , Stefan Maat , Neil Smith
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/3932 , G11B5/3993 , G11B2005/0008 , G11B2005/0016
摘要： An extraordinary magnetoresistance (EMR) sensor uses a ferromagnetic multilayer to provide perpendicular magnetic biasing for the sensor. The ferromagnetic multilayer has intrinsic perpendicular magnetic anisotropy and is preferably on top of the EMR active film. The multilayer comprises alternating films of Co, Fe or CoFe and Pt, Pd or PtPd with the preferred multilayer being alternating Co/Pt or Co/Pd films. A diffusion barrier may be located between the EMR active film and the ferromagnetic multilayer.
摘要翻译：非常大的磁阻（EMR）传感器使用铁磁多层来为传感器提供垂直磁偏置。铁磁性多层膜具有固有的垂直磁各向异性，优选在EMR活性膜的顶部。多层包括Co，Fe或CoFe和Pt，Pd或PtPd的交替膜，优选的多层是交替的Co / Pt或Co / Pd膜。扩散阻挡层可以位于EMR活性膜和铁磁性多层之间。

4. 发明申请

US20060002030A1 Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by an antiferromagnetic/ferromagnetic exchange-coupled structure 有权
标题翻译：具有反铁磁/铁磁交换耦合结构的垂直磁偏置的非凡磁阻传感器
公开(公告)号：US20060002030A1
公开(公告)日：2006-01-05
申请号：US10883204
申请日：2004-06-30
申请人： Matthew Carey , Bruce Gurney , Stefan Maat , Neil Smith
发明人： Matthew Carey , Bruce Gurney , Stefan Maat , Neil Smith
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/39 , G11B5/3993 , G11B2005/0008 , H01L43/08
摘要： An extraordinary magnetoresistance (EMR) sensor has an antiferromagnetic/ferromagnetic exchange-coupled bilayer structure on top of the EMR active film. The ferromagnetic layer in the bilayer structure has perpendicular magnetic anisotropy and is exchange-biased by the antiferromagnetic layer. The antiferromagnetic/ferromagnetic bilayer structure provides a magnetic field perpendicular to the plane of the EMR active film to bias the magnetoresistance vs. field response of the EMR sensor. The ferromagnetic layer may be formed of any of the ferromagnetic materials useful for perpendicular magnetic recording, and is prepared in a way that its anisotropy axis is significantly out-of-plane. The antiferromagnetic layer is formed of any of the known Mn alloys, such as PtMn, NiMn, FeMn, IrMn, PdMn, PtPdMn and RhMn, or any of the insulating antiferromagnetic materials, such as those based on the cobalt oxide and nickel oxide antiferromagnetic materials.
摘要翻译：非常大的磁阻（EMR）传感器在EMR活性膜的顶部具有反铁磁/铁磁交换耦合双层结构。双层结构中的铁磁层具有垂直的磁各向异性，并被反铁磁层交换偏置。反铁磁/铁磁双层结构提供垂直于EMR有源膜的平面的磁场，以偏置EMR传感器的磁阻与场响应。铁磁层可以由用于垂直磁记录的任何铁磁材料形成，并且以使其各向异性轴显着超出平面的方式制备。反铁磁层由任何已知的Mn合金形成，例如PtMn，NiMn，FeMn，IrMn，PdMn，PtPdMn和RhMn，或任何绝缘反铁磁材料，例如基于氧化钴和氧化镍反铁磁材料的那些。

5. 发明授权

US07957107B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-free layer structure and low current-induced noise 有权
标题翻译：具有反平行自由层结构和低电流感应噪声的电流垂直平面（CPP）磁阻传感器
公开(公告)号：US07957107B2
公开(公告)日：2011-06-07
申请号：US12502764
申请日：2009-07-14
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL1), a second free ferromagnetic layer (FL2), and an antiparallel (AP) coupling (APC) layer that couples FL1 and FL2 together antiferromagnetically with the result that FL1 and FL2 have substantially antiparallel magnetization directions and rotate together in the presence of a magnetic field. The thickness of FL1 is preferably greater than the spin-diffusion length of the electrons in the FL1 material. The minimum thickness for FL2 is a thickness resulting in a FL2 magnetic moment equivalent to at least 10 Å Ni80Fe20 and preferably to at least 15 Å Ni80Fe20. The CPP sensor operates specifically with the conventional sense current (opposite the electron current) directed from the pinned ferromagnetic layer to the APF structure, which results in suppression of current-induced noise.
摘要翻译：电流垂直平面（CPP）磁阻传感器具有作为自由层的反向平行自由（APF）结构和施加的偏置或感测电流的特定方向。（APF）结构具有第一自由铁磁（FL1），第二自由铁磁层（FL2）和反FL-FL2与FL2耦合的反并联（AP）耦合（APC）层，其结果是FL1和FL2具有实质上反平行磁化方向，并且在存在磁场的情况下一起旋转。 FL1的厚度优选大于FL1材料中的电子的自旋扩散长度。 FL2的最小厚度是导致等于至少10埃NiFeFe 2的FL2磁矩并且优选至少为15埃的Ni38Fe20的厚度。 CPP传感器与从钉扎铁磁层引导到APF结构的常规感测电流（与电子电流相反）特别地工作，这导致电流引起的噪声的抑制。

6. 发明申请

US20090168269A1 CURRENT PERPENDICULAR TO PLANE SPIN VALVE WITH HIGH-POLARIZATION MATERIAL IN AP1 LAYER FOR REDUCED SPIN TORQUE 审中-公开
标题翻译：在AP1层平面旋转阀的平面旋转阀用于减少旋转扭矩的当前
公开(公告)号：US20090168269A1
公开(公告)日：2009-07-02
申请号：US11966017
申请日：2007-12-28
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Stefan Maat , Neil Smith
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/132 , H01F10/3272
摘要： A current perpendicular to plane magnetoresistive sensor having improved resistance amplitude change and reduced spin torque noise. The sensor has an antiparallel coupled pinned layer structure with at least one of the layers of the pinned layer structure includes a high spin polarization material such as Co2FeGe. The sensor can also include an antiparallel coupled free layer.
摘要翻译：垂直于平面磁阻传感器的电流具有改善的电阻幅度变化和减少的自旋转矩噪声。传感器具有反平行耦合的钉扎层结构，其中被钉扎层结构的至少一个层包括诸如Co 2 FeGe的高自旋极化材料。传感器还可以包括反平行耦合的自由层。

7. 发明授权

US07170722B2 Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by a ferromagnetic multilayer 有权
标题翻译：非常磁阻传感器，通过铁磁多层垂直磁偏置
公开(公告)号：US07170722B2
公开(公告)日：2007-01-30
申请号：US10903173
申请日：2004-07-30
申请人： Matthew J. Carey , Bruce A. Gurney , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Bruce A. Gurney , Stefan Maat , Neil Smith
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/3932 , G11B5/3993 , G11B2005/0008 , G11B2005/0016
摘要： An extraordinary magnetoresistance (EMR) sensor uses a ferromagnetic multilayer to provide perpendicular magnetic biasing for the sensor. The ferromagnetic multilayer has intrinsic perpendicular magnetic anisotropy and is preferably on top of the EMR active film. The multilayer comprises alternating films of Co, Fe or CoFe and Pt, Pd or PtPd with the preferred multilayer being alternating Co/Pt or Co/Pd films. A diffusion barrier may be located between the EMR active film and the ferromagnetic multilayer.
摘要翻译：非常大的磁阻（EMR）传感器使用铁磁多层来为传感器提供垂直磁偏置。铁磁性多层膜具有固有的垂直磁各向异性，优选在EMR活性膜的顶部。多层包括Co，Fe或CoFe和Pt，Pd或PtPd的交替膜，优选的多层是交替的Co / Pt或Co / Pd膜。扩散阻挡层可以位于EMR活性膜和铁磁性多层之间。

8. 发明申请

US20090154025A1 SCISSORING-TYPE CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH FREE LAYERS HAVING ETCH-INDUCED UNIAXIAL MAGNETIC ANISOTROPY 有权
标题翻译：具有电流感应的单相电磁异相的自由层的分析型电流 - 平面到平面（CPP）磁传感器
公开(公告)号：US20090154025A1
公开(公告)日：2009-06-18
申请号：US11959102
申请日：2007-12-18
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3932 , G11B2005/3996 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A “scissoring-type” current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with dual ferromagnetic sensing or free layers separated by a nonmagnetic spacer layer has improved stability as a result of etch-induced uniaxial magnetic anisotropy in each of the free layers. Each of the two ferromagnetic free layers has an etch-induced uniaxial magnetic anisotropy and an in-plane magnetic moment substantially parallel to its uniaxial anisotropy in the quiescent state, i.e., the absence of an applied magnetic field. The etch-induced uniaxial anisotropy of each of the free layers is achieved either by direct ion etching of each of the free layers, and/or by ion etching of the layer on which each of the free layers is deposited. A strong magnetic anisotropy is induced in the free layers by the etching, which favors generally orthogonal orientation of the two free layers in the quiescent state.
摘要翻译：具有双铁磁感测或由非磁性间隔层隔开的自由层的“扫描型”电流垂直平面（CPP）磁阻传感器具有改进的稳定性，这是由于每个中的蚀刻诱导的单轴磁各向异性自由层。两个铁磁自由层中的每一个具有蚀刻诱导的单轴磁各向异性和在静止状态下基本上平行于其单轴各向异性的面内磁矩，即不存在施加的磁场。每个自由层的蚀刻诱导的单轴各向异性通过对每个自由层的直接离子蚀刻和/或通过其上沉积有每个自由层的层的离子蚀刻来实现。通过蚀刻在自由层中诱发强烈的磁各向异性，这有利于静止状态下的两个自由层的大致正交取向。

9. 发明授权

US08233247B2 Scissoring-type current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensors with damped free layer structures 有权
标题翻译：具有阻尼自由层结构的剪切型电流 - 垂直于平面的巨磁阻（CPP-GMR）传感器
公开(公告)号：US08233247B2
公开(公告)日：2012-07-31
申请号：US12101453
申请日：2008-04-11
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B5/3932 , G11B2005/3996
摘要： A “scissoring-type” current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor has magnetically damped free layers. In one embodiment each of the two free layers is in contact with a damping layer that comprises Pt or Pd, or a lanthanoid (an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Th, Yb, and Lu). Each of the two free layers has one of its surfaces in contact with the sensor's electrically conducting nonmagnetic spacer layer and its other surface in contact with its associated damping layer. A nonmagnetic film may be located between each free layer and its associated damping layer. In another embodiment the damping element is present as a dopant or impurity in each of the two free layers. In another embodiment a nanolayer of the damping element is located within each of the two free layers.
摘要翻译： “剪切型”电流垂直于平面的巨磁阻（CPP-GMR）传感器具有磁阻自由层。在一个实施方案中，两个自由层中的每一个与包含Pt或Pd或镧系元素（选自La，Ce，Pr，Nd，Pm，Sm，Eu，Gd， Tb，Dy，Ho，Er，Th，Yb和Lu）。两个自由层中的每一个具有与传感器的导电非磁性间隔层接触的其一个表面，并且其另一个表面与其相关联的阻尼层接触。非磁性膜可以位于每个自由层与其相关阻尼层之间。在另一个实施例中，阻尼元件作为两个自由层中的每一个中的掺杂剂或杂质存在。在另一个实施方案中，阻尼元件的纳米层位于两个自由层的每一个内。

10. 发明申请

US20090268353A1 CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH ANTIPARALLEL-FREE LAYER STRUCTURE AND LOW CURRENT-INDUCED NOISE 有权
标题翻译：具有无阻抗层结构和低电流感应噪声的电流 - 平面（CPP）磁传感器
公开(公告)号：US20090268353A1
公开(公告)日：2009-10-29
申请号：US12502764
申请日：2009-07-14
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL1), a second free ferromagnetic layer (FL2), and an antiparallel (AP) coupling (APC) layer that couples FL1 and FL2 together antiferromagnetically with the result that FL1 and FL2 have substantially antiparallel magnetization directions and rotate together in the presence of a magnetic field. The thickness of FL1 is preferably greater than the spin-diffusion length of the electrons in the FL1 material. The minimum thickness for FL2 is a thickness resulting in a FL2 magnetic moment equivalent to at least 10 Å Ni80Fe20 and preferably to at least 15 Å Ni80Fe20. The CPP sensor operates specifically with the conventional sense current (opposite the electron current) directed from the pinned ferromagnetic layer to the APF structure, which results in suppression of current-induced noise.
摘要翻译：电流垂直平面（CPP）磁阻传感器具有作为自由层的反向平行自由（APF）结构和施加的偏置或感测电流的特定方向。（APF）结构具有第一自由铁磁（FL1），第二自由铁磁层（FL2）和反FL-FL2与FL2耦合的反并联（AP）耦合（APC）层，其结果是FL1和FL2具有实质上反平行磁化方向，并且在存在磁场的情况下一起旋转。 FL1的厚度优选大于FL1材料中的电子的自旋扩散长度。 FL2的最小厚度是导致等于至少10埃NiFeFe 2的FL2磁矩并且优选至少为15埃的Ni38Fe20的厚度。 CPP传感器与从钉扎铁磁层引导到APF结构的常规感测电流（与电子电流相反）特别地工作，这导致电流引起的噪声的抑制。

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