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    • 2. 发明申请
    • CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH ANTIPARALLEL-FREE LAYER STRUCTURE AND LOW CURRENT-INDUCED NOISE
    • 具有无阻抗层结构和低电流感应噪声的电流 - 平面(CPP)磁传感器
    • US20070253119A1
    • 2007-11-01
    • US11380625
    • 2006-04-27
    • Matthew CareyJeffrey ChildressStefan MaatNeil Smith
    • Matthew CareyJeffrey ChildressStefan MaatNeil Smith
    • G11B5/33G11B5/127
    • G11B5/3932B82Y10/00B82Y25/00G01R33/093G11B5/3912G11B2005/3996
    • A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL1), a second free ferromagnetic layer (FL2), and an antiparallel (AP) coupling (APC) layer that couples FL1 and FL2 together antiferromagnetically with the result that FL1 and FL2 have substantially antiparallel magnetization directions and rotate together in the presence of a magnetic field. The thicknesses of FL1 and FL2 are chosen to obtain the desired net free layer magnetic moment/area for the sensor, and the thickness of FL1 is preferably chosen to be greater than the spin-diffusion length of the electrons in the FL1 material to maximize the bulk spin-dependent scattering of electrons and thus maximize the sensor signal. The CPP sensor operates specifically with the conventional sense current (opposite the electron current) directed from the pinned ferromagnetic layer to the APF structure, which results in suppression of current-induced noise.
    • 电流垂直平面(CPP)磁阻传感器具有作为自由层的反向平行自由(APF)结构和施加的偏置或感测电流的特定方向。 (APF)结构具有第一自由铁磁(FL1),第二自由铁磁层(FL2)和反FL-FL2与FL2耦合的反并联(AP)耦合(APC)层,其结果是FL1和FL2具有实质上 反平行磁化方向,并且在存在磁场的情况下一起旋转。 选择FL1和FL2的厚度以获得用于传感器的期望的净自由层磁矩/面积,并且FL1的厚度优选地选择为大于FL1材料中的电子的自旋扩散长度以使 电子的体自旋依赖散射,从而使传感器信号最大化。 CPP传感器与从钉扎铁磁层引导到APF结构的常规感测电流(与电子电流相反)特别地工作,这导致电流引起的噪声的抑制。
    • 5. 发明申请
    • MAGNETORESISTIVE SENSOR HAVING A MAGNETICALLY STABLE FREE LAYER WITH A POSITIVE MAGNETOSTRICTION
    • 具有磁性电磁感应的磁性稳定的自由层的磁传感器
    • US20070281079A1
    • 2007-12-06
    • US11737701
    • 2007-04-19
    • Matthew CareyJeffrey ChildressStefan MaatJames Nix
    • Matthew CareyJeffrey ChildressStefan MaatJames Nix
    • B05D5/12
    • G11B5/3166G11B5/3163G11B5/3196G11B5/3932G11C11/14H01L43/12
    • A magnetoresistive sensor having a magnetically stable free layer fabricated from a material having a positive magnetostriction such as a Co—Fe—B alloy. Although the free layer is fabricated from a material that has a positive magnetostriction, which would ordinarily make the free layer unstable, the magnetization of the free layer remains stable because of an induced magnetic anisotropy that has an easy axis of magnetization oriented parallel to the Air-bearing Surface (ABS). This magnetic anisotropy of the free layer is induced by an anisotropic texturing of the surface of the free layer. The resulting anisotropic surface texture is produced by an ion milling process that utilizes an ion beam directed at an acute angle relative to the normal to the surface of the wafer whereon the sensor is fabricated while the wafer is held on a stationary chuck. This angled, static ion milling produces an anisotropic surface texture, or roughness, of the free layer, which results in the above described magnetic anisotropy with an easy axis of magnetization in a desired orientation.
    • 具有由具有正磁致伸缩性的材料制成的磁稳定自由层的磁阻传感器,例如Co-Fe-B合金。 尽管自由层由具有正磁致伸缩的材料制成,这通常会使自由层不稳定,但是由于具有易磁化轴平行于空气的诱导磁各向异性,自由层的磁化保持稳定 (ABS)。 自由层的磁各向异性由自由层表面的各向异性纹理引发。 产生的各向异性表面纹理是通过离子研磨工艺产生的,该离子铣削工艺利用相对于晶片表面法线的锐角定向的离子束,其中制造传感器,同时将晶片保持在静止卡盘上。 这种成角度的静态离子铣削产生自由层的各向异性表面纹理或粗糙度,这导致上述磁各向异性,并且在所需方向上具有容易的磁化轴。
    • 10. 发明申请
    • Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved antiparallel-pinned structure
    • 电流垂直平面(CPP)磁阻传感器具有改进的反平行销钉结构
    • US20060092580A1
    • 2006-05-04
    • US10977300
    • 2004-10-29
    • Matthew CareyJeffrey ChildressStefan Maat
    • Matthew CareyJeffrey ChildressStefan Maat
    • G11B5/33G11B5/127
    • G01R33/093B82Y25/00G11B5/3906
    • A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an improved antiparallel (AP) pinned structure. The AP-pinned structure has two ferromagnetic layers separated by a nonmagnetic antiparallel coupling (APC) layer and with their magnetization directions oriented antiparallel. One of the ferromagnetic layers in the AP-pinned structure is the reference layer in contact with the CPP-SV sensor's nonmagnetic electrically conducting spacer layer. In the improved AP-pinned structure each of the ferromagnetic layers has a thickness greater than 30 Å, preferably greater than approximately 50 Å, and the APC layer is either Ru or Ir with a thickness less than 7 Å, preferably about 5 Å or less. The ultrathin APC layer, especially if formed of iridium (Ir), provides significant coupling strength to allow the thick ferromagnetic layers to retain their magnetization directions in a stable antiparallel orientation.
    • 电流垂直于平面的自旋阀(CPP-SV)磁阻传感器具有改进的反平行(AP)钉扎结构。 AP钉扎结构具有由非磁性反平行耦合(APC)层分离并且其磁化方向反平行取向的两个铁磁层。 AP钉扎结构中的一个铁磁层是与CPP-SV传感器的非磁性导电间隔层接触的参考层。 在改进的AP钉扎结构中,每个铁磁层的厚度大于30埃,优选大于约400埃,APC层是厚度小于7埃,优选约5埃或更小的Ru或Ir 。 超薄APC层,特别是如果由铱(Ir)形成,则提供显着的耦合强度,以使厚的铁磁层保持其稳定的反向平行取向的磁化方向。