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1. 发明申请

WO2018002737A1 TECHNIQUES TO IMPROVE RELIABILITY IN CU INTERCONNECTS USING CU INTERMETALLICS 审中-公开
标题翻译：利用CU INTERMETALLICS提高CU互连可靠性的技术
公开(公告)号：WO2018002737A1
公开(公告)日：2018-01-04
申请号：PCT/IB2017/052728
申请日：2017-05-10
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , IBM (CHINA) INVESTMENT COMPANY LIMITED
发明人： HU, Chao-Kun , LAVOIE, Christian , ROSSNAGEL, Stephen , SHAW, Thomas, McCarroll
IPC分类号： H01L21/768 , H01L23/532
摘要： Techniques for improving reliability in Cu interconnects using Cu intermetallics are provided. In one aspect, a method of forming a Cu interconnect in a dielectric (114) over a Cu line (112) includes the steps of: forming at least one via (116) in the dielectric (114) over the Cu line (112); depositing a metal layer (118) onto the dielectric (114) and lining the via (116) such that the metal layer (118) is in contact with the Cu line (112) at the bottom of the via (116), wherein the metal layer (118) comprises at least one metal that can react with Cu to form a Cu intermetallic; annealing the metal layer (118) and the Cu line (112) under conditions sufficient to form a Cu intermetallic barrier (120) at the bottom of the via (116); and plating Cu (122) into the via (116) to form the Cu interconnect, wherein the Cu interconnect is separated from the Cu line (112) by the Cu intermetallic barrier (120). A device structure is also provided.
摘要翻译：提供了使用Cu金属间化合物提高Cu互连的可靠性的技术。在一个方面，一种在Cu线（112）上的电介质（114）中形成Cu互连的方法包括以下步骤：在Cu线（112）上的电介质（114）中形成至少一个通孔（116） ; 将金属层（118）沉积到电介质（114）上并对通孔（116）进行衬里，使得金属层（118）与通孔（116）的底部处的Cu线（112）接触，其中金属层（118）包含至少一种可与Cu反应以形成Cu金属间化合物的金属; 在足以在通孔（116）的底部形成Cu金属间势垒（120）的条件下退火金属层（118）和Cu线（112）; 以及将Cu（122）电镀到通孔（116）中以形成Cu互连，其中Cu互连通过Cu金属间阻挡层（120）与Cu线（112）分离。还提供设备结构。

2. 发明申请

WO2015145274A1 OXIDE MEDIATED EPITAXIAL NICKEL DISILICIDE ALLOY CONTACT FORMATION 审中-公开
标题翻译：氧化物介质的外延镍基合金接触形成
公开(公告)号：WO2015145274A1
公开(公告)日：2015-10-01
申请号：PCT/IB2015/051263
申请日：2015-02-19
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED
发明人： OZCAN, Ahmet, Serkan , BREIL, Nicolas , ALPTEKIN, Emre , SCHONENBERG, Kathryn , LAVOIE, Christian
IPC分类号： H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/78
CPC分类号： H01L21/76886 , H01L21/28518 , H01L21/28568 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76855 , H01L21/76895 , H01L21/823871 , H01L23/485 , H01L23/53209 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L27/092 , H01L29/41766 , H01L29/665 , H01L29/66545 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： Contact openings are formed into a dielectric material exposing a surface portion of a semiconductor substrate. An interfacial oxide layer is then formed in each contact opening and on an exposed surface portion of the interfacial oxide layer. A NiPt alloy layer is formed within each opening and on the exposed surface portion of each interfacial oxide layer. An anneal is then performed that forms a contact structure of, from bottom to top, a nickel disilicide alloy body having an inverted pyramidal shape, a Pt rich silicide cap region and an oxygen rich region. A metal contact is then formed within each contact opening and atop the oxygen rich region of each contact structure.
摘要翻译：接触开口形成为露出半导体衬底的表面部分的电介质材料。然后在每个接触开口中和界面氧化物层的暴露表面部分上形成界面氧化物层。在每个开口内和每个界面氧化物层的暴露的表面部分上形成NiPt合金层。然后进行退火，其形成从底部到顶部具有倒金字塔形状，富Pt硅化物帽区域和富氧区域的二硅化镍合金体的接触结构。然后在每个接触开口内和每个接触结构的富氧区顶上形成金属接触。

3. 发明申请

WO2006072538A1 SELF-ALIGNED PROCESS FOR NANOTUBE/NANOWIRE FETS 审中-公开
标题翻译： NANOTUBE / NANOWIRE FET的自对准工艺
公开(公告)号：WO2006072538A1
公开(公告)日：2006-07-13
申请号：PCT/EP2005/056746
申请日：2005-12-13
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , AVOURIS, Phaedon , CARRUTHERS, Roy , CHEN, Jia , DETAVERNIER, Christophe , LAVOIE, Christian , WONG, Hon-sum Philip
发明人： AVOURIS, Phaedon , CARRUTHERS, Roy , CHEN, Jia , DETAVERNIER, Christophe , LAVOIE, Christian , WONG, Hon-sum Philip
IPC分类号： H01L51/00
CPC分类号： H01L29/6656 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/665 , H01L29/7833 , H01L51/0048 , H01L51/0541 , Y10S977/847 , Y10S977/938
摘要： A semiconductor structure comprising: a substrate comprising at least one gate region located thereon, said at least one gate region comprising a layer of at least one one-dimensional nanostructure; and a metal carbide contact located on a surface of said substrate that is aligned to an edge of said layer of at least one one-dimensional nanostructure.
摘要翻译：一种半导体结构，包括：衬底，其包括位于其上的至少一个栅极区域，所述至少一个栅极区域包括至少一个一维纳米结构层; 以及金属碳化物接触件，位于所述衬底的与至少一个一维纳米结构的所述层的边缘对准的表面上。

4. 发明申请

WO2006015912A1 MOSFET STRUCTURE WITH MULTIPLE SELF-ALIGNED SILICIDE CONTACTS 审中-公开
标题翻译：具有多个自对准硅化物接触的MOSFET结构
公开(公告)号：WO2006015912A1
公开(公告)日：2006-02-16
申请号：PCT/EP2005/053082
申请日：2005-06-29
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , CHAN, Kevin , LAVOIE, Christian , RIM, Kern
发明人： CHAN, Kevin , LAVOIE, Christian , RIM, Kern
IPC分类号： H01L21/336
CPC分类号： H01L29/66507 , H01L29/6653 , H01L29/7833
摘要： A metal oxide semiconductor field effect transistor (MOSFET) structure that includes multiple and distinct self-aligned silicide contacts and methods of fabricating the same are provided. The MOSFET structure includes at least one metal oxide semiconductor field effect transistor (14) having a gate conductor including a gate edge located on a surface of a Si-containing substrate; a first inner silicide (32) having an edge that is substantially aligned to the gate edge of the at least one metal oxide semiconductor field effect transistor; and a second outer silicide (30) located adjacent to the first inner silicide. In accordance with the present invention, the second outer silicide has second thickness is greater than the first thickness of the first inner silicide. Moreover, the second outer silicide has a resistivity that is lower than the resistivity of the first inner silicide.
摘要翻译：提供了包括多个不同的自对准硅化物触点的金属氧化物半导体场效应晶体管（MOSFET）结构及其制造方法。 MOSFET结构包括至少一个金属氧化物半导体场效应晶体管（14），其具有包括位于含Si衬底的表面上的栅极边缘的栅极导体; 第一内部硅化物（32），其具有基本上对准所述至少一个金属氧化物半导体场效应晶体管的栅极边缘的边缘; 以及位于第一内部硅化物附近的第二外部硅化物（30）。根据本发明，第二外部硅化物的第二厚度大于第一内部硅化物的第一厚度。此外，第二外部硅化物的电阻率低于第一内部硅化物的电阻率。

5. 发明申请

WO2015118417A1 METAL SEMICONDUCTOR ALLOY CONTACT RESISTANCE IMPROVEMENT 审中-公开
标题翻译：金属半导体合金接触电阻改进
公开(公告)号：WO2015118417A1
公开(公告)日：2015-08-13
申请号：PCT/IB2015/050147
申请日：2015-01-08
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , IBM JAPAN LIMITED
发明人： BREIL, Nicolas , OZCAN, Ahmet, Serkan , ALPTEKIN, Emre , LAVOIE, Christian , SCHONENBERG, Kathryn
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L21/28026 , H01L21/28512 , H01L21/28518 , H01L21/28568 , H01L21/76843 , H01L21/76855 , H01L21/76858 , H01L23/485 , H01L23/53238 , H01L29/456 , H01L29/66545 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： Contact openings are formed into a dielectric material exposing a surface portion of a semiconductor substrate. A first transition metal liner including at least one first transition metal element, a second transition metal liner including at least one second transition metal element that is different from the at least one first transition metal element and a metal contact are sequentially formed within each contact opening. Following a planarization process, the structure is annealed forming metal semiconductor alloy contacts at the bottom of each contact opening. Each metal semiconductor alloy contact that is formed includes the at least one first transition metal element, the at least one second transition metal element and a semiconductor element.
摘要翻译：接触开口形成为露出半导体衬底的表面部分的电介质材料。包括至少一个第一过渡金属元件的第一过渡金属衬垫，包括与所述至少一个第一过渡金属元件不同的至少一个第二过渡金属元件和金属接触件的第二过渡金属衬垫在每个接触开口。在平坦化处理之后，结构是在每个接触开口的底部处退火形成金属半导体合金触点。形成的每个金属半导体合金触点包括至少一个第一过渡金属元件，至少一个第二过渡金属元件和半导体元件。

6. 发明申请

WO2006029950A1 UNI-DIRECTIONAL DIFFUSION OF METAL SILICIDE IN SEMICONDUCTOR DEVICES 审中-公开
标题翻译：金属硅化物在半导体器件中的单向扩散
公开(公告)号：WO2006029950A1
公开(公告)日：2006-03-23
申请号：PCT/EP2005/054087
申请日：2005-08-18
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , DOMENICUCCI, Anthony , JONES, Bradley , LAVOIE, Christian , PURTELL, Robert , WANG, Yun Yu , WONG, Kwong Hon
发明人： DOMENICUCCI, Anthony , JONES, Bradley , LAVOIE, Christian , PURTELL, Robert , WANG, Yun Yu , WONG, Kwong Hon
IPC分类号： H01L21/285
CPC分类号： H01L21/28518 , H01L29/665
摘要： The present invention provides a method for enhancing uni-directional diffusion of a metal during silicidation by using a metal-containing silicon alloy (56) in conjunction with a first anneal in which two distinct thermal cycles are performed. The first thermal cycle of the first anneal is performed at a temperature that is capable of enhancing the uni-directional diffusion of metal, e.g., Co and/or Ni, into a Si-containing layer (52) . The first thermal cycle causes an amorphous metal-containing silicide (60) to form. The second thermal cycle is performed at a temperature that converts the amorphous metal-containing silicide into a crystallized metal rich silicide (64) that is substantially non-etchable as compared to the metal-containing silicon alloy layer or a pure metal-containing layer. Following the first anneal, a selective etch is performed to remove any unreacted metal-containing alloy from the structure. A second anneal is performed to convert the metal rich silicide phase formed by the two thermal cycles of the first anneal into a metal silicide (68) phase that is in its lowest resistance phase. A metal silicide is provided whose thicknes is self-limiting.
摘要翻译：本发明提供一种通过使用含金属的硅合金（56）与进行两个不同的热循环的第一退火相结合来增强硅化物中金属的单向扩散的方法。第一退火的第一热循环在能够增强金属例如Co和/或Ni的单向扩散到含Si层（52）中的温度下进行。第一热循环导致形成非晶态金属的硅化物（60）。第二热循环在将含非晶态金属的硅化物转化为与含金属的硅合金层或纯金属含有层相比基本上不可蚀刻的结晶的富含金属的硅化物（64）的温度下进行。在第一退火之后，进行选择性蚀刻以从结构中除去任何未反应的含金属合金。执行第二退火以将由第一退火的两个热循环形成的富金属硅化物相转换成处于其最低电阻相的金属硅化物（68）相。提供了一种金属硅化物，其厚度是自限制的。

7. 发明申请

WO2007133356A1 METHOD FOR FORMING SELF-ALIGNED METAL SILICIDE CONTACTS 审中-公开
标题翻译：形成自对准金属硅化物接触的方法
公开(公告)号：WO2007133356A1
公开(公告)日：2007-11-22
申请号：PCT/US2007/008798
申请日：2007-04-10
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , FANG, Sunfei , KNARR, Randolph, F. , KRISHNAN, Mahadevaiyer , LAVOIE, Christian , MO, Renee, T. , PRANATHARTHIHARAN, Balasubramanian , STRANE, Jay, W.
发明人： FANG, Sunfei , KNARR, Randolph, F. , KRISHNAN, Mahadevaiyer , LAVOIE, Christian , MO, Renee, T. , PRANATHARTHIHARAN, Balasubramanian , STRANE, Jay, W.
IPC分类号： H01L21/44 , C23F1/00
CPC分类号： H01L21/28518 , C23F1/28 , C23F1/30 , C23F1/44
摘要： A method for forming self-aligned metal silicide contacts over at least two silicon-containing semiconductor regions that are spaced apart from each other by an exposed dielectric region is disclosed. Each of the self-aligned metal silicide contacts so formed comprises at least nickel silicide and platinum silicide with a substantially smooth surface, and the exposed dielectric region, is essentially free of metal and metal silicide. Nickel or nickel alloy deposition is followed by low-temperature annealing, nickel etching, high-temperature annealing, and aqua regla etching.
摘要翻译：公开了一种用于在通过暴露的电介质区域彼此间隔开的至少两个含硅半导体区域上形成自对准金属硅化物接触的方法。如此形成的每个自对准金属硅化物触点至少包括具有基本平滑表面的硅化镍和硅化铂，并且暴露的电介质区域基本上不含金属和金属硅化物。镍或镍合金沉积之后是低温退火，镍蚀刻，高温退火和水蚀刻蚀刻。

8. 发明申请

WO2022018038A1 SUPERCONDUCTING STRUCTURE AND DEVICE SURFACE TERMINATION WITH ALLOY 审中-公开
公开(公告)号：WO2022018038A1
公开(公告)日：2022-01-27
申请号：PCT/EP2021/070173
申请日：2021-07-19
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM DEUTSCHLAND GMBH
发明人： WYMORE, Benjamin , LAVOIE, Christian , BRINK, Markus
IPC分类号： H01L39/24
摘要： A method of fabricating a superconductor device includes providing a first metal layer on top of the substrate. An oxidation of a top surface of the first metal layer is rejected. A second metal layer is deposited on top of the first metal layer. A superconducting alloy of the first metal layer and the second metal layer is created between the first metal layerand the second metal layer. There is no oxide layer between the superconducting alloy and the first metal layer.

9. 发明申请

WO2012109079A1 A METHOD TO ENABLE THE PROCESS AND ENLARGE THE PROCESS WINDOW FOR SILICIDE, GERMANIDE OR GERMANOSILICIDE FORMATION IN STRUCTURES WITH EXTREMELY SMALL DIMENSIONS 审中-公开
标题翻译：一种使用过程的方法，并扩大了具有极小尺寸结构的硅酮，锗化物或锗氰酸酯形成的工艺窗口
公开(公告)号：WO2012109079A1
公开(公告)日：2012-08-16
申请号：PCT/US2012/023569
申请日：2012-02-02
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , FLETCHER, Benjamin Luke , LAVOIE, Christian , MAURER, Siegfried Lutz , ZHANG, Zhen
发明人： FLETCHER, Benjamin Luke , LAVOIE, Christian , MAURER, Siegfried Lutz , ZHANG, Zhen
IPC分类号： H01L21/44
CPC分类号： B82Y40/00 , B82Y10/00 , H01L29/0673 , H01L29/16 , H01L29/66469 , H01L29/775
摘要： Techniques for silicide, germanide or germanosilicide formation in extremely small structures are provided. In one aspect, a method for forming a silicide, germanide or germanosilicide in a three-dimensional silicon, germanium or silicon germanium structure having extremely small dimensions is provided. The method includes the following steps. At least one element is implanted into the structure. At least one metal is deposited onto the structure. The structure is annealed to intersperse the metal within the silicon, germanium or silicon germanium to form the silicide, germanide or germanosilicide wherein the implanted element serves to prevent morphological degradation of the silicide, germanide or germanosilicide. The implanted element can include at least one of carbon, fluorine and silicon.
摘要翻译：提供了极小结构中硅化物，锗化锗或锗硅化物形成技术。一方面，提供了在具有极小尺寸的三维硅，锗或硅锗结构中形成硅化物，锗化锗或锗硅化物的方法。该方法包括以下步骤。将至少一个元件植入结构中。至少一种金属沉积在结构上。将该结构退火以将硅，锗或硅锗内的金属分散以形成硅化物，锗化锗或锗硅化物，其中所述植入元件用于防止硅化物，锗化物或锗硅化物的形态降解。植入元件可以包括碳，氟和硅中的至少一种。

10. 发明申请

WO2011064085A1 SELF ALIGNED CARBIDE SOURCE/DRAIN FET 审中-公开
标题翻译：自对准碳源/漏极FET
公开(公告)号：WO2011064085A1
公开(公告)日：2011-06-03
申请号：PCT/EP2010/066989
申请日：2010-11-08
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , CHANG, Josephine , GUILLORN, Michael , LAVOIE, Christian , CABRAL, Cyril, Jr. , GRILL, Alfred , O'SULLIVAN, Eugene
发明人： CHANG, Josephine , GUILLORN, Michael , LAVOIE, Christian , CABRAL, Cyril, Jr. , GRILL, Alfred , O'SULLIVAN, Eugene
IPC分类号： H01L29/775 , H01L29/16 , H01L51/05
CPC分类号： H01L29/775 , B82Y10/00 , H01L29/16 , H01L29/1602 , H01L51/0048 , H01L51/0541 , H01L51/105
摘要： A field effect transistor includes a metal carbide source portion, a metal carbide drain portion, an insulating carbon portion separating the metal carbide source portion from the metal carbide drain portion, a nanostructure formed over the insulating carbon portion and connecting the metal carbide source portion to the metal carbide drain portion, and a gate stack formed over at least a portion of the insulating carbon portion and at least a portion of the nanostructure.
摘要翻译：场效应晶体管包括金属碳化物源部分，金属碳化物漏极部分，将金属碳化物源部分与金属碳化物排出部分分离的绝缘碳部分，形成在绝缘碳部分上并将金属碳化物源部分连接到金属碳化物排出部分和形成在绝缘碳部分和至少一部分纳米结构的至少一部分上的栅叠层。

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