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1. 发明申请

WO2006029950A1 UNI-DIRECTIONAL DIFFUSION OF METAL SILICIDE IN SEMICONDUCTOR DEVICES 审中-公开
标题翻译：金属硅化物在半导体器件中的单向扩散
公开(公告)号：WO2006029950A1
公开(公告)日：2006-03-23
申请号：PCT/EP2005/054087
申请日：2005-08-18
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , DOMENICUCCI, Anthony , JONES, Bradley , LAVOIE, Christian , PURTELL, Robert , WANG, Yun Yu , WONG, Kwong Hon
发明人： DOMENICUCCI, Anthony , JONES, Bradley , LAVOIE, Christian , PURTELL, Robert , WANG, Yun Yu , WONG, Kwong Hon
IPC分类号： H01L21/285
CPC分类号： H01L21/28518 , H01L29/665
摘要： The present invention provides a method for enhancing uni-directional diffusion of a metal during silicidation by using a metal-containing silicon alloy (56) in conjunction with a first anneal in which two distinct thermal cycles are performed. The first thermal cycle of the first anneal is performed at a temperature that is capable of enhancing the uni-directional diffusion of metal, e.g., Co and/or Ni, into a Si-containing layer (52) . The first thermal cycle causes an amorphous metal-containing silicide (60) to form. The second thermal cycle is performed at a temperature that converts the amorphous metal-containing silicide into a crystallized metal rich silicide (64) that is substantially non-etchable as compared to the metal-containing silicon alloy layer or a pure metal-containing layer. Following the first anneal, a selective etch is performed to remove any unreacted metal-containing alloy from the structure. A second anneal is performed to convert the metal rich silicide phase formed by the two thermal cycles of the first anneal into a metal silicide (68) phase that is in its lowest resistance phase. A metal silicide is provided whose thicknes is self-limiting.
摘要翻译：本发明提供一种通过使用含金属的硅合金（56）与进行两个不同的热循环的第一退火相结合来增强硅化物中金属的单向扩散的方法。第一退火的第一热循环在能够增强金属例如Co和/或Ni的单向扩散到含Si层（52）中的温度下进行。第一热循环导致形成非晶态金属的硅化物（60）。第二热循环在将含非晶态金属的硅化物转化为与含金属的硅合金层或纯金属含有层相比基本上不可蚀刻的结晶的富含金属的硅化物（64）的温度下进行。在第一退火之后，进行选择性蚀刻以从结构中除去任何未反应的含金属合金。执行第二退火以将由第一退火的两个热循环形成的富金属硅化物相转换成处于其最低电阻相的金属硅化物（68）相。提供了一种金属硅化物，其厚度是自限制的。

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