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    • 1. 发明申请
    • RLINK - ON-DIE INDUCTOR STRUCTURES TO IMPROVE SIGNALING
    • RLINK - 片上电感结构改善信号传输
    • WO2018004851A1
    • 2018-01-04
    • PCT/US2017/032940
    • 2017-05-16
    • INTEL CORPORATION
    • ZHANG, Yu AmosKIM, JihwanBALANKUTTY, AjaySRIRAMULU, AnupriyaMAZUMDER, MD. MohiuddinO'MAHONY, FrankWU, ZuoguoAYGUN, Kemal
    • H01L23/62H01L49/02H01L23/64
    • Integrated circuit (IC) chip "on-die" inductor structures (systems and methods for their manufacture) may improve signaling from a data signal circuit to a surface contact of the chip. Such inductor structures may include a first data signal inductor having (1) a second end electrically coupled to an electrostatic discharge (ESD) circuit and a capacitance value of that circuit, and (2) a first end electrically coupled to a the data signal surface contact and to a capacitance value at that contact; and a second data signal inductor having (1) a second end electrically coupled to the data signal circuit and a capacitance value of that circuit, (2) a first end electrically coupled to the second end of the first data signal inductor, and to the capacitance value of the ESD circuit. Inductor values of the first and second inductors may be selected to cancel out the capacitance values to improve signaling.
    • 集成电路(IC)芯片“片上”(on-die) 电感器结构(用于其制造的系统和方法)可以改善从数据信号电路到芯片的表面接触的信号传输。 这样的电感器结构可以包括具有(1)电耦合到静电放电(ESD)电路的第二端和该电路的电容值的第一数据信号电感器,以及(2)电耦合到数据信号表面 接触并达到该接触处的电容值; 以及第二数据信号电感器,其具有(1)电耦合到数据信号电路的第二端和该电路的电容值,(2)电耦合到第一数据信号电感器的第二端的第一端,以及 ESD电路的电容值。 可以选择第一和第二电感器的电感值以消除电容值以改善信号传输。
    • 3. 发明申请
    • MACRO-TRANSISTOR DEVICES
    • 宏器件设备
    • WO2013074076A1
    • 2013-05-23
    • PCT/US2011/060652
    • 2011-11-14
    • INTEL CORPORATIONHYVONEN, SamiRIZK, Jad B.O'MAHONY, Frank
    • HYVONEN, SamiRIZK, Jad B.O'MAHONY, Frank
    • H01L27/00H01L21/768
    • H01L27/0886H01L27/088H01L27/1211H01L29/42376H01L29/66181H01L29/785H01L29/93H01L29/94H03L7/099
    • Macro-transistor structures are disclosed. In some cases, the macro-transistor structures have the same number of terminals and properties similar to long-channel transistors, but are suitable for analog circuits in deep submicron technologies deep-submicron process nodes. The macro-transistor structures can be implemented, for instance, with a plurality of transistors constructed and arranged in series, and with their gates tied together, generally referred to herein as a transistor stack. One or more of the serial transistors within the stack can be implemented with a plurality of parallel transistors and/or can have a threshold voltage different that is different from the threshold voltages of other transistors in the stack. Alternatively, or in addition, one or more of the serial transistors within the macro-transistor can be statically or dynamically controlled to tune the performance characteristics of the macro-transistor. The macro-transistors can be used in numerous circuits, such as varactors, VCOs, PLLs, and tunable circuits.
    • 公开了宏观晶体管结构。 在一些情况下,宏晶体管结构具有与长沟道晶体管类似的端子和性质相同的数量,但适用于深亚微米技术深亚微米工艺节点中的模拟电路。 宏晶体管结构可以例如通过串联构造和布置的多个晶体管实现,并且其栅极连接在一起,这里通常称为晶体管堆叠。 堆叠内的一个或多个串联晶体管可以用多个并联晶体管实现和/或可以具有不同于堆叠中其它晶体管的阈值电压的阈值电压。 或者或另外,宏晶体管内的一个或多个串联晶体管可以被静态或动态地控制,以调整宏晶体管的性能特性。 宏晶体管可用于许多电路,例如变容二极管,VCO,PLL和可调谐电路。