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    • 2. 发明申请
    • MACRO-TRANSISTOR DEVICES
    • 宏器件设备
    • WO2013074076A1
    • 2013-05-23
    • PCT/US2011/060652
    • 2011-11-14
    • INTEL CORPORATIONHYVONEN, SamiRIZK, Jad B.O'MAHONY, Frank
    • HYVONEN, SamiRIZK, Jad B.O'MAHONY, Frank
    • H01L27/00H01L21/768
    • H01L27/0886H01L27/088H01L27/1211H01L29/42376H01L29/66181H01L29/785H01L29/93H01L29/94H03L7/099
    • Macro-transistor structures are disclosed. In some cases, the macro-transistor structures have the same number of terminals and properties similar to long-channel transistors, but are suitable for analog circuits in deep submicron technologies deep-submicron process nodes. The macro-transistor structures can be implemented, for instance, with a plurality of transistors constructed and arranged in series, and with their gates tied together, generally referred to herein as a transistor stack. One or more of the serial transistors within the stack can be implemented with a plurality of parallel transistors and/or can have a threshold voltage different that is different from the threshold voltages of other transistors in the stack. Alternatively, or in addition, one or more of the serial transistors within the macro-transistor can be statically or dynamically controlled to tune the performance characteristics of the macro-transistor. The macro-transistors can be used in numerous circuits, such as varactors, VCOs, PLLs, and tunable circuits.
    • 公开了宏观晶体管结构。 在一些情况下,宏晶体管结构具有与长沟道晶体管类似的端子和性质相同的数量,但适用于深亚微米技术深亚微米工艺节点中的模拟电路。 宏晶体管结构可以例如通过串联构造和布置的多个晶体管实现,并且其栅极连接在一起,这里通常称为晶体管堆叠。 堆叠内的一个或多个串联晶体管可以用多个并联晶体管实现和/或可以具有不同于堆叠中其它晶体管的阈值电压的阈值电压。 或者或另外,宏晶体管内的一个或多个串联晶体管可以被静态或动态地控制,以调整宏晶体管的性能特性。 宏晶体管可用于许多电路,例如变容二极管,VCO,PLL和可调谐电路。