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1. 发明申请

US20050245181A1 Vibration damping during chemical mechanical polishing 有权
标题翻译：化学机械抛光时的振动阻尼
公开(公告)号：US20050245181A1
公开(公告)日：2005-11-03
申请号：US11046189
申请日：2005-01-28
申请人： Hung Chen , Shijian Li , John White , Ramin Emami , Fred Redeker , Steven Zuniga , Ramakrishna Cheboli
发明人： Hung Chen , Shijian Li , John White , Ramin Emami , Fred Redeker , Steven Zuniga , Ramakrishna Cheboli
IPC分类号： B24B5/00 , B24B37/04 , B24B41/06
CPC分类号： B24B37/30
摘要： A carrier head for chemical mechanical polishing is described. The carrier head includes a backing assembly, a housing and a damping material. The backing assembly includes a substrate support surface. The housing is connectable to a drive shaft to rotate with the drive shaft about a rotation axis. In one implementation, the damping material is in a load path between the backing assembly and the housing to reduce transmission of vibrations from the backing assembly to the housing.
摘要翻译：描述了用于化学机械抛光的载体头。载体头包括背衬组件，壳体和阻尼材料。背衬组件包括基板支撑表面。壳体可连接到驱动轴，以驱动轴绕旋转轴线旋转。在一个实施方案中，阻尼材料位于背衬组件和壳体之间的负载路径中，以减少振动从背衬组件传递到壳体。

2. 发明申请

US20060148387A1 Vibration damping in chemical mechanical polishing system 失效
标题翻译：化学机械抛光系统中的振动阻尼
公开(公告)号：US20060148387A1
公开(公告)日：2006-07-06
申请号：US11333992
申请日：2006-01-17
申请人： Hung Chen , John White , Shijian Li , Fred Redeker , Ramin Emami
发明人： Hung Chen , John White , Shijian Li , Fred Redeker , Ramin Emami
IPC分类号： B24B29/00
CPC分类号： B24B37/30 , B24B37/12 , B24B37/32 , B24B41/007
摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.
摘要翻译：用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。保持结构和表面限定用于接收基底的空腔。保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

3. 发明授权

US07497767B2 Vibration damping during chemical mechanical polishing 有权
标题翻译：化学机械抛光时的振动阻尼
公开(公告)号：US07497767B2
公开(公告)日：2009-03-03
申请号：US11046189
申请日：2005-01-28
申请人： Hung Chih Chen , Shijian Li , John M. White , Ramin Emami , Fred C. Redeker , Steven M. Zuniga , Ramakrishna Cheboli
发明人： Hung Chih Chen , Shijian Li , John M. White , Ramin Emami , Fred C. Redeker , Steven M. Zuniga , Ramakrishna Cheboli
IPC分类号： B24B5/35
CPC分类号： B24B37/30
摘要： A carrier head for chemical mechanical polishing is described. The carrier head includes a backing assembly, a housing and a damping material. The backing assembly includes a substrate support surface. The housing is connectable to a drive shaft to rotate with the drive shaft about a rotation axis. In one implementation, the damping material is in a load path between the backing assembly and the housing to reduce transmission of vibrations from the backing assembly to the housing.
摘要翻译：描述了用于化学机械抛光的载体头。载体头包括背衬组件，壳体和阻尼材料。背衬组件包括基板支撑表面。壳体可连接到驱动轴，以驱动轴绕旋转轴线旋转。在一个实施方案中，阻尼材料位于背衬组件和壳体之间的负载路径中，以减少振动从背衬组件传递到壳体。

4. 发明授权

US07041599B1 High through-put Cu CMP with significantly reduced erosion and dishing 失效
标题翻译：高通量Cu CMP具有显着减少的侵蚀和凹陷
公开(公告)号：US07041599B1
公开(公告)日：2006-05-09
申请号：US09469709
申请日：1999-12-21
申请人： Shijian Li , Fred C. Redeker , John White , Ramin Emami
发明人： Shijian Li , Fred C. Redeker , John White , Ramin Emami
IPC分类号： H01L21/302
CPC分类号： B24B37/04 , B24B57/02 , H01L21/3212
摘要： High through-put Cu CMP is achieved with reduced erosion and dishing by a multi-step polishing technique. Deposited Cu is polished with fixed abrasive polishing pads initially at a high removal rate and subsequently at a reduced removal rate and high Cu:barrier layer (Ta) selectivity. Embodiments of the present invention include reducing dishing by: controlling platen rotating speeds; increasing the concentration of active chemicals; and cleaning the polishing pads between wafers. Embodiments also include removing particulate material during CMP by increasing the flow rate of the chemical agent or controlling the static etching rate between about 100 Å and about 150 Å per minute, and recycling the chemical agent. Embodiments further include flowing an inhibitor across the wafer surface after each CMP step to reduce the static etching rate.
摘要翻译：通过多步抛光技术，可以减少腐蚀和凹陷，实现高通量Cu CMP。沉积的Cu以固定的研磨抛光垫抛光，最初以高的去除速率和随后的降低的去除速率和高的Cu：阻挡层（Ta）选择性。本发明的实施例包括：通过以下步骤减少凹陷：控制压板转速; 增加活性化学品的浓度; 并在晶片之间清洁抛光垫。实施方案还包括通过增加化学试剂的流速或控制每分钟约100埃至约150埃的静态蚀刻速率和循环该化学试剂来在CMP期间除去颗粒物质。实施例还包括在每个CMP步骤之后使抑制剂流过晶片表面以降低静态蚀刻速率。

5. 发明授权

US06322427B1 Conditioning fixed abrasive articles 有权
标题翻译：调理固定磨料制品
公开(公告)号：US06322427B1
公开(公告)日：2001-11-27
申请号：US09302530
申请日：1999-04-30
申请人： Shijian Li , Sidney Huey , Ramin Emami , Fritz Redeker , John White
发明人： Shijian Li , Sidney Huey , Ramin Emami , Fritz Redeker , John White
IPC分类号： B24B100
CPC分类号： B24B53/017 , B24B37/042
摘要： The useful lifetime of a fixed abrasive article is extended and wafer-to-wafer uniformity enhanced by preconditioning a fixed abrasive element and/or periodic conditioning after initial wafer polishing. Embodiments include preconditioning by forced removal of an upper binder-rich portion of the fixed abrasive elements to expose abrasive particles having a similar concentration as the bulk concentration at about one half the height of the elements. Embodiments further include periodic conditioning after initial wafer polishing by forced removal of an upper portion of the fixed abrasive elements.
摘要翻译：固定磨料制品的使用寿命延长，并且通过预先固定研磨元件和/或在初始晶片抛光之后进行周期性调节来提高晶片到晶片的均匀性。实施例包括通过强制去除固定研磨元件的上部粘结剂丰富部分来预处理，以使具有与元件高度的大约一半高度的体积浓度相似的浓度的磨料颗粒暴露。实施例还包括通过强制去除固定研磨元件的上部的初始晶片抛光之后的周期性调节。

6. 发明授权

US06592439B1 Platen for retaining polishing material 有权
标题翻译：压板用于保留抛光材料
公开(公告)号：US06592439B1
公开(公告)日：2003-07-15
申请号：US09709769
申请日：2000-11-10
申请人： Shijian Li , Manoocher Birang , Ramin Emami , Andrew Nagengast , Douglas Orcutt Brown , Shi-Ping Wang , Martin Scales , John White
发明人： Shijian Li , Manoocher Birang , Ramin Emami , Andrew Nagengast , Douglas Orcutt Brown , Shi-Ping Wang , Martin Scales , John White
IPC分类号： B24B2900
CPC分类号： B25B11/005 , B24B21/04 , B24B37/16 , H01L21/30625
摘要： Generally, a method and apparatus for retaining polishing material is provided. In one embodiment, the apparatus includes a platen having a top surface, a plurality of channels and one or more vacuum ports. The top surface is adapted to support the polishing material. The plurality of channels are formed in a polishing area of the top surface. The vacuum ports are disposed in the platen and at least one port is in communication with at least one of the channels. Upon application of a vacuum to the ports, the channels remove fluids under the polishing material while securing the polishing material to the top surface.
摘要翻译：通常，提供了用于保持抛光材料的方法和装置。在一个实施例中，该装置包括具有顶表面，多个通道和一个或多个真空端口的压板。顶表面适于支撑抛光材料。多个通道形成在顶表面的抛光区域中。真空端口设置在压板中，并且至少一个端口与至少一个通道连通。当向端口施加真空时，通道在将抛光材料固定到顶表面的同时移除抛光材料下面的流体。

7. 发明授权

US07104267B2 Planarized copper cleaning for reduced defects 失效
标题翻译：平面化铜清洁减少缺陷
公开(公告)号：US07104267B2
公开(公告)日：2006-09-12
申请号：US09727133
申请日：2000-11-29
申请人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
发明人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
IPC分类号： H01L21/302
CPC分类号： H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A process for treating a copper or copper alloy substrate surface with a composition and corrosion inhibitor solution to minimize defect formation and surface corrosion, the method including applying a composition including one or more chelating agents, a pH adjusting agent to produce a pH between about 3 and about 11, and deionized water, and then applying a corrosion inhibitor solution. The composition may further comprise a reducing agent and/or corrosion inhibitor. The method may further comprise applying the corrosion inhibitor solution prior to treating the substrate surface with the composition.
摘要翻译：一种用组合物和腐蚀抑制剂溶液处理铜或铜合金基材表面以最小化缺陷形成和表面腐蚀的方法，该方法包括施加包含一种或多种螯合剂的组合物，pH调节剂以产生约3 约11，去离子水，然后涂上缓蚀剂溶液。组合物还可以包含还原剂和/或缓蚀剂。该方法还可以包括在用组合物处理基材表面之前施加腐蚀抑制剂溶液。

8. 发明授权

US06669538B2 Pad cleaning for a CMP system 失效
标题翻译： CMP系统的垫清洁
公开(公告)号：US06669538B2
公开(公告)日：2003-12-30
申请号：US09512745
申请日：2000-02-24
申请人： Shijian Li , Ramin Emami , Sen-Hou Ko , Shi-Ping Wang , Fred C. Redeker , Lizhong Sun , Stan Tsai
发明人： Shijian Li , Ramin Emami , Sen-Hou Ko , Shi-Ping Wang , Fred C. Redeker , Lizhong Sun , Stan Tsai
IPC分类号： B24B100
CPC分类号： B24B53/017
摘要： The present invention generally provides a system and apparatus for cleaning a polishing pad, such as a fixed abrasive pad, in a substrate processing system. In one embodiment, the system includes one or more nozzles which spray a fluid at pressures of about 30 psi to about 300 psi or greater, as measured at the nozzle, onto a polishing pad at acute angles to the surface of the polishing pad. The nozzles can spray downward and outward toward the perimeter of the pad to facilitate the debris removal therefrom. The system can include a pressure source to produce a sufficient fluid pressure substantially higher than the typical fluid pressure available from a facility installation.
摘要翻译：本发明通常提供一种用于在衬底处理系统中清洁抛光垫，例如固定研磨垫的系统和装置。在一个实施例中，该系统包括一个或多个喷嘴，其以在喷嘴处测量的约30psi至约300psi或更大的压力喷射流体至抛光垫的表面的锐角处的抛光垫上。喷嘴可以朝向垫的周边向下和向外喷射以便于从其中移除碎片。该系统可以包括压力源以产生足够的流体压力，该流体压力显着高于可从设施设施获得的典型流体压力。

9. 发明授权

US06432826B1 Planarized Cu cleaning for reduced defects 失效
标题翻译：平面化的Cu清洁，减少缺陷
公开(公告)号：US06432826B1
公开(公告)日：2002-08-13
申请号：US09450479
申请日：1999-11-29
申请人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
发明人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
IPC分类号： H01L21302
CPC分类号： H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： Cu metallization is treated to reduce defects and effect passivation by removing a thin surface layer or removing corrosion stains, subsequent to CMP and barrier layer removal, employing a cleaning composition comprising deionized water, an acid and ammonium hydroxide and/or an amine. Embodiments include removing up to about 100 Å of the Cu metallization surface in a damascene opening by sequentially treating the exposed Cu surface with: an optional corrosion inhibitor; a solution having a pH of about 4 to about 11 and containing an acid, ammonium hydroxide and/or an amine, and deionized water; and a corrosion inhibitor.
摘要翻译：通过使用包含去离子水，酸和氢氧化铵和/或胺的清洁组合物，在CMP和阻隔层去除之后，通过去除薄的表面层或去除腐蚀污渍来处理Cu金属化以减少缺陷并实现钝化。实施例包括通过用任意的腐蚀抑制剂依次处理暴露的Cu表面，在镶嵌开口中去除多达约100埃的Cu金属化表面; pH为约4至约11并含有酸，氢氧化铵和/或胺的溶液和去离子水; 和腐蚀抑制剂。

10. 发明授权

US07014545B2 Vibration damping in a chemical mechanical polishing system 有权
标题翻译：化学机械抛光系统中的振动阻尼
公开(公告)号：US07014545B2
公开(公告)日：2006-03-21
申请号：US10754997
申请日：2004-01-10
申请人： Hung Chih Chen , John M. White , Shijian Li , Fred C. Redeker , Ramin Emami
发明人： Hung Chih Chen , John M. White , Shijian Li , Fred C. Redeker , Ramin Emami
IPC分类号： B24B7/00
CPC分类号： B24B37/30 , B24B37/12 , B24B37/32 , B24B41/007
摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.
摘要翻译：用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。保持结构和表面限定用于接收基底的空腔。保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

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