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    • 4. 发明授权
    • High through-put Cu CMP with significantly reduced erosion and dishing
    • 高通量Cu CMP具有显着减少的侵蚀和凹陷
    • US07041599B1
    • 2006-05-09
    • US09469709
    • 1999-12-21
    • Shijian LiFred C. RedekerJohn WhiteRamin Emami
    • Shijian LiFred C. RedekerJohn WhiteRamin Emami
    • H01L21/302
    • B24B37/04B24B57/02H01L21/3212
    • High through-put Cu CMP is achieved with reduced erosion and dishing by a multi-step polishing technique. Deposited Cu is polished with fixed abrasive polishing pads initially at a high removal rate and subsequently at a reduced removal rate and high Cu:barrier layer (Ta) selectivity. Embodiments of the present invention include reducing dishing by: controlling platen rotating speeds; increasing the concentration of active chemicals; and cleaning the polishing pads between wafers. Embodiments also include removing particulate material during CMP by increasing the flow rate of the chemical agent or controlling the static etching rate between about 100 Å and about 150 Å per minute, and recycling the chemical agent. Embodiments further include flowing an inhibitor across the wafer surface after each CMP step to reduce the static etching rate.
    • 通过多步抛光技术,可以减少腐蚀和凹陷,实现高通量Cu CMP。 沉积的Cu以固定的研磨抛光垫抛光,最初以高的去除速率和随后的降低的去除速率和高的Cu:阻挡层(Ta)选择性。 本发明的实施例包括:通过以下步骤减少凹陷:控制压板转速; 增加活性化学品的浓度; 并在晶片之间清洁抛光垫。 实施方案还包括通过增加化学试剂的流速或控制每分钟约100埃至约150埃的静态蚀刻速率和循环该化学试剂来在CMP期间除去颗粒物质。 实施例还包括在每个CMP步骤之后使抑制剂流过晶片表面以降低静态蚀刻速率。
    • 6. 发明授权
    • Method of initiating cooper CMP process
    • 启动联合CMP过程的方法
    • US06541384B1
    • 2003-04-01
    • US09657391
    • 2000-09-08
    • Lizhong SunStan TsaiShijian LiJohn White
    • Lizhong SunStan TsaiShijian LiJohn White
    • H01L2100
    • C09G1/02
    • The present invention provides a chemical mechanical polishing composition for planarizing copper and a method for planarizing, or initiating the planarization of, copper using the composition. The chemical mechanical polishing composition includes an oxidizing agent and a copper (II) compound. The composition optionally includes one or more of the following compound types: a complexing agent; a corrosion inhibitor; an acid; and, an abrasive. In one embodiment, the oxidizing agent is hydrogen peroxide, ferric nitrate or an iodate. In another embodiment, the copper (II) compound is CuSO4. The chemical mechanical polishing method involves the step of polishing a copper layer using a composition that includes an oxidizing agent and a copper (II) compound. The composition is formed in a variety of ways. In one embodiment, it is formed by adding the copper (II) compound to a solution containing the oxidizing agent, and any included optional compound types, in deionized water. In another embodiment, it is formed by adding a solution containing the copper (II) compound in deionized water to a solution containing the oxidizing agent, and any included optional compound types, in deionized water.
    • 本发明提供了一种用于平坦化铜的化学机械抛光组合物和使用该组合物平坦化或起始铜的平面化的方法。 化学机械抛光组合物包括氧化剂和铜(II)化合物。 组合物任选地包括一种或多种以下化合物类型:络合剂; 腐蚀抑制剂; 酸; 和磨料。 在一个实施方案中,氧化剂是过氧化氢,硝酸铁或碘酸盐。 在另一个实施方案中,铜(II)化合物是CuSO 4。 化学机械抛光方法包括使用包含氧化剂和铜(II)化合物的组合物抛光铜层的步骤。 组合物以各种方式形成。 在一个实施方案中,其通过将铜(II)化合物加入到含有氧化剂的溶液和任何所包含的任选化合物类型的去离子水中而形成。 在另一个实施方案中,其通过在去离子水中将含有铜(II)化合物的溶液在去离子水中加入到含有氧化剂和任何所包含的任选化合物类型的溶液中而形成。