专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08293460B2 Double exposure patterning with carbonaceous hardmask 失效
标题翻译：用碳质硬掩模进行双重曝光图案化
公开(公告)号：US08293460B2
公开(公告)日：2012-10-23
申请号：US12339836
申请日：2008-12-19
申请人： Hui W. Chen , Chorng-Ping Chang , Yongmei Chen , Huixiong Dai , Jiahua Yu , Susie X. Yang , Xumou Xu , Christopher D. Bencher , Raymond Hoiman Hung , Michael P. Duane , Christopher Siu Wing Ngai , Jen Shu , Kenneth MacWilliams
发明人： Hui W. Chen , Chorng-Ping Chang , Yongmei Chen , Huixiong Dai , Jiahua Yu , Susie X. Yang , Xumou Xu , Christopher D. Bencher , Raymond Hoiman Hung , Michael P. Duane , Christopher Siu Wing Ngai , Jen Shu , Kenneth MacWilliams
IPC分类号： G03F7/20
CPC分类号： G03F7/11 , G03F7/091 , G03F7/2022
摘要： Methods to pattern features in a substrate layer by exposing a photoresist layer more than once. In one embodiment, a single reticle may be exposed more than once with an overlay offset implemented between successive exposures to reduce the half pitch of the reticle. In particular embodiments, these methods may be employed to reduce the half pitch of the features printed with 65 nm generation lithography equipment to achieve 45 nm lithography generation CD and pitch performance.
摘要翻译：通过不止一次地曝光光致抗蚀剂层来对衬底层中的特征进行图案化的方法。在一个实施例中，单个掩模版可以在连续曝光之间实现的覆盖偏移曝光不止一次以减小掩模版的半间距。在特定实施例中，可以使用这些方法来减少用65nm生成光刻设备印刷的特征的半间距，以实现45nm光刻产生CD和间距性能。

2. 发明授权

US07901869B2 Double patterning with a double layer cap on carbonaceous hardmask 有权
标题翻译：在碳质硬掩模上双层图案化
公开(公告)号：US07901869B2
公开(公告)日：2011-03-08
申请号：US11873648
申请日：2007-10-17
申请人： Christopher D. Bencher , Huixiong Dai
发明人： Christopher D. Bencher , Huixiong Dai
IPC分类号： G03F7/26 , C23C16/00
CPC分类号： H01L21/0337 , H01L21/0338
摘要： Methods to etch features in a substrate with a multi-layered double patterning mask. The multi-layered double patterning mask includes a carbonaceous mask layer, a first cap layer on the carbonaceous mask layer and a second cap layer on the first cap layer. After forming the multi-layered mask, a first lithographically defined pattern is etched into the second cap layer. A double pattern that is a composition of the first lithographically defined pattern etched in the second cap layer and a second lithographically defined pattern is then etched into the first cap layer and the carbonaceous mask layer. The double pattern formed in the carbonaceous mask layer is then transferred to a substrate layer and any portion of the multi-layered mask remaining is then removed.
摘要翻译：用多层双图案掩模蚀刻衬底中的特征的方法。多层双层图案掩模包括碳质掩模层，碳质掩模层上的第一盖层和第一盖层上的第二盖层。在形成多层掩模之后，将第一光刻定义的图案蚀刻到第二盖层中。然后将作为在第二盖层中蚀刻的第一光刻定义图案和第二光刻定义图案的组合物的双重图案蚀刻到第一盖层和碳质掩模层中。然后将形成在碳质掩模层中的双重图案转移到基底层，然后除去剩余的多层掩模的任何部分。

3. 发明授权

US08148269B2 Boron nitride and boron-nitride derived materials deposition method 有权
标题翻译：氮化硼和氮化硼衍生材料的沉积方法
公开(公告)号：US08148269B2
公开(公告)日：2012-04-03
申请号：US12415759
申请日：2009-03-31
申请人： Mihaela Balseanu , Christopher D. Bencher , Yongmei Chen , Li Yan Miao , Victor Nguyen , Isabelita Roflox , Li-Qun Xia , Derek R. Witty
发明人： Mihaela Balseanu , Christopher D. Bencher , Yongmei Chen , Li Yan Miao , Victor Nguyen , Isabelita Roflox , Li-Qun Xia , Derek R. Witty
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31144 , H01L21/3086 , H01L21/3105 , H01L21/31111 , H01L21/31122 , H01L21/318 , H01L21/76832 , H01L29/4966
摘要： A method and apparatus are provided to form spacer materials adjacent substrate structures. In one embodiment, a method is provided for processing a substrate including placing a substrate having a substrate structure adjacent a substrate surface in a deposition chamber, depositing a spacer layer on the substrate structure and substrate surface, and etching the spacer layer to expose the substrate structure and a portion of the substrate surface, wherein the spacer layer is disposed adjacent the substrate structure. The spacer layer may comprise a boron nitride material. The spacer layer may comprise a base spacer layer and a liner layer, and the spacer layer may be etched in a two-step etching process.
摘要翻译：提供了一种形成邻近衬底结构的间隔物材料的方法和装置。在一个实施例中，提供了一种用于处理衬底的方法，包括将具有邻近衬底表面的衬底结构的衬底放置在沉积室中，在衬底结构和衬底表面上沉积间隔层，以及蚀刻间隔层以暴露衬底结构和衬底表面的一部分，其中间隔层邻近衬底结构设置。间隔层可以包括氮化硼材料。间隔层可以包括基底间隔层和衬垫层，并且可以在两步蚀刻工艺中蚀刻间隔层。

4. 发明申请

US20090263972A1 BORON NITRIDE AND BORON-NITRIDE DERIVED MATERIALS DEPOSITION METHOD 有权
标题翻译：硼硝酸盐和硼 - 硼衍生物质沉积方法
公开(公告)号：US20090263972A1
公开(公告)日：2009-10-22
申请号：US12415759
申请日：2009-03-31
申请人： Mihaela Balseanu , Christopher D. Bencher , Yongmei Chen , Li Yan Miao , Victor Nguyen , Isabelita Roflox , Li-Qun Xia , Derek R. Witty
发明人： Mihaela Balseanu , Christopher D. Bencher , Yongmei Chen , Li Yan Miao , Victor Nguyen , Isabelita Roflox , Li-Qun Xia , Derek R. Witty
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/3086 , H01L21/3105 , H01L21/31111 , H01L21/31122 , H01L21/318 , H01L21/76832 , H01L29/4966
摘要： A method and apparatus are provided to form spacer materials adjacent substrate structures. In one embodiment, a method is provided for processing a substrate including placing a substrate having a substrate structure adjacent a substrate surface in a deposition chamber, depositing a spacer layer on the substrate structure and substrate surface, and etching the spacer layer to expose the substrate structure and a portion of the substrate surface, wherein the spacer layer is disposed adjacent the substrate structure. The spacer layer may comprise a boron nitride material. The spacer layer may comprise a base spacer layer and a liner layer, and the spacer layer may be etched in a two-step etching process.
摘要翻译：提供了一种形成邻近衬底结构的间隔物材料的方法和装置。在一个实施例中，提供了一种用于处理衬底的方法，包括将具有邻近衬底表面的衬底结构的衬底放置在沉积室中，在衬底结构和衬底表面上沉积间隔层，以及蚀刻间隔层以暴露衬底结构和衬底表面的一部分，其中间隔层邻近衬底结构设置。间隔层可以包括氮化硼材料。间隔层可以包括基底间隔层和衬垫层，并且可以在两步蚀刻工艺中蚀刻间隔层。

5. 发明授权

US07811924B2 Air gap formation and integration using a patterning cap 有权
标题翻译：使用图案化盖的气隙形成和一体化
公开(公告)号：US07811924B2
公开(公告)日：2010-10-12
申请号：US12336884
申请日：2008-12-17
申请人： Zhenjiang Cui , Mehul Naik , Christopher D. Bencher , Kenneth MacWilliams
发明人： Zhenjiang Cui , Mehul Naik , Christopher D. Bencher , Kenneth MacWilliams
IPC分类号： H01L21/4763
CPC分类号： H01L23/5222 , H01L21/02115 , H01L21/02271 , H01L21/0337 , H01L21/31144 , H01L21/3146 , H01L21/7682 , H01L21/76831 , H01L21/76832 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Methods for patterning films and their resulting structures. In an embodiment, an amorphous carbon mask is formed over a substrate, such as a damascene layer. A spacer layer is deposited over the amorphous carbon mask and the spacer layer is etched to form a spacer and to expose the amorphous carbon mask. The amorphous carbon mask is removed selectively to the spacer to expose the substrate layer. A gap fill layer is deposited around the spacer to cover the substrate layer but expose the spacer. The spacer is removed selectively to form a gap fill mask over the substrate. The pattern of the gap fill mask is transferred, in one implementation, into a damascene layer to remove at least a portion of an IMD and form an air gap.
摘要翻译：膜图案及其结果的方法。在一个实施方案中，在诸如镶嵌层的基底上形成无定形碳掩模。在无定形碳掩模上沉积间隔层，并且蚀刻间隔层以形成间隔物并暴露无定形碳掩模。无定形碳掩模被选择性地去除到间隔物以暴露衬底层。间隔填充层沉积在间隔物周围以覆盖基底层，但暴露间隔物。选择性地移除间隔物以在衬底上形成间隙填充掩模。间隙填充掩模的图案在一个实施方式中转移到镶嵌层中以去除IMD的至少一部分并形成气隙。

6. 发明申请

US20090309230A1 AIR GAP FORMATION AND INTEGRATION USING A PATTERNING CAP 有权
标题翻译：空气隙形成和整合使用图案盖
公开(公告)号：US20090309230A1
公开(公告)日：2009-12-17
申请号：US12336884
申请日：2008-12-17
申请人： ZHENJIANG CUI , Mehul Naik , Christopher D. Bencher , Kenneth MacWilliams
发明人： ZHENJIANG CUI , Mehul Naik , Christopher D. Bencher , Kenneth MacWilliams
IPC分类号： H01L21/768 , H01L23/535
CPC分类号： H01L23/5222 , H01L21/02115 , H01L21/02271 , H01L21/0337 , H01L21/31144 , H01L21/3146 , H01L21/7682 , H01L21/76831 , H01L21/76832 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Methods for patterning films and their resulting structures. In an embodiment, an amorphous carbon mask is formed over a substrate, such as a damascene layer. A spacer layer is deposited over the amorphous carbon mask and the spacer layer is etched to form a spacer and to expose the amorphous carbon mask. The amorphous carbon mask is removed selectively to the spacer to expose the substrate layer. A gap fill layer is deposited around the spacer to cover the substrate layer but expose the spacer. The spacer is removed selectively to form a gap fill mask over the substrate. The pattern of the gap fill mask is transferred, in one implementation, into a damascene layer to remove at least a portion of an IMD and form an air gap.
摘要翻译：膜图案及其结果的方法。在一个实施方案中，在诸如镶嵌层的基底上形成无定形碳掩模。在无定形碳掩模上沉积间隔层，并且蚀刻间隔层以形成间隔物并暴露无定形碳掩模。无定形碳掩模被选择性地去除到间隔物以暴露衬底层。间隔填充层沉积在间隔物周围以覆盖基底层，但暴露间隔物。选择性地移除间隔物以在衬底上形成间隙填充掩模。间隙填充掩模的图案在一个实施方式中转移到镶嵌层中以去除IMD的至少一部分并形成气隙。

7. 发明授权

US08658242B2 Resist fortification for magnetic media patterning 有权
标题翻译：磁性介质图案抗蚀强化
公开(公告)号：US08658242B2
公开(公告)日：2014-02-25
申请号：US13193539
申请日：2011-07-28
申请人： Christopher D. Bencher , Roman Gouk , Steven Verhaverbeke , Li-Qun Xia , Yong-Won Lee , Matthew D. Scotney-Castle , Martin A. Hilkene , Peter I. Porshnev
发明人： Christopher D. Bencher , Roman Gouk , Steven Verhaverbeke , Li-Qun Xia , Yong-Won Lee , Matthew D. Scotney-Castle , Martin A. Hilkene , Peter I. Porshnev
IPC分类号： B05D5/12
CPC分类号： G11B5/85 , G11B5/743 , G11B5/855
摘要： A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.
摘要翻译：提供了一种形成磁性介质基板的方法和装置。在具有磁敏感层的基底上形成图案化的抗蚀剂层。在图案化的抗蚀剂层上形成保形层，以防止后续处理期间图案的劣化。对衬底进行能量处理，其中能量物质根据形成在图案化抗蚀剂中的图案穿透图案化抗蚀剂和保形层的部分，撞击磁敏感层并改变其磁性。然后去除图案化的抗蚀剂和共形保护层，留下具有基本上不变的形貌的磁性质图案的磁性基底。

8. 发明授权

US07718081B2 Techniques for the use of amorphous carbon (APF) for various etch and litho integration schemes 失效
标题翻译：使用无定形碳（APF）进行各种蚀刻和光刻积分方案的技术
公开(公告)号：US07718081B2
公开(公告)日：2010-05-18
申请号：US11422031
申请日：2006-06-02
申请人： Wei Liu , Jim Zhongyi He , Sang H. Ahn , Meihua Shen , Hichem M'Saad , Wendy H. Yeh , Christopher D. Bencher
发明人： Wei Liu , Jim Zhongyi He , Sang H. Ahn , Meihua Shen , Hichem M'Saad , Wendy H. Yeh , Christopher D. Bencher
IPC分类号： C23F1/00 , B44C1/22 , G03C5/00 , H01L21/302 , C03C25/68
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/3146
摘要： A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.
摘要翻译：提供蚀刻基板的方法。蚀刻基板的方法包括使用基板上的双图案化非晶碳层作为硬掩模将图案转印到基板中。任选地，在将图案转移到基底内之前，将非碳基层沉积在无定形碳层上作为覆盖层。

9. 发明授权

US07807578B2 Frequency doubling using spacer mask 失效
标题翻译：使用间隔掩模倍频
公开(公告)号：US07807578B2
公开(公告)日：2010-10-05
申请号：US11875250
申请日：2007-10-19
申请人： Christopher D. Bencher , Keiji Horioka
发明人： Christopher D. Bencher , Keiji Horioka
IPC分类号： H01L21/311
CPC分类号： H01L21/3081 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139
摘要： A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask and a spacer mask is first provided. The sacrificial mask is comprised of a series of lines and the spacer mask has spacer lines adjacent to the sidewalls of the series of lines. Next, the spacer mask is cropped. Finally, the sacrificial mask is removed to provide a cropped spacer mask. The cropped spacer mask doubles the frequency of the series of lines of the sacrificial mask.
摘要翻译：对半导体掩模的制造方法进行说明。首先提供具有牺牲掩模和间隔掩模的半导体叠层。牺牲掩模由一系列线组成，并且间隔物掩模具有与该系列线的侧壁相邻的间隔线。接下来，裁剪间隔掩模。最后，去除牺牲掩模以提供裁剪的间隔物掩模。裁剪的间隔掩模将牺牲掩模的一系列线的频率加倍。

10. 发明申请

US20080299776A1 FREQUENCY DOUBLING USING SPACER MASK 失效
标题翻译：使用SPACER MASK进行频率双重调整
公开(公告)号：US20080299776A1
公开(公告)日：2008-12-04
申请号：US11875250
申请日：2007-10-19
申请人： Christopher D. Bencher , Keiji Horioka
发明人： Christopher D. Bencher , Keiji Horioka
IPC分类号： H01L21/311
CPC分类号： H01L21/3081 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139
摘要： A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask and a spacer mask is first provided. The sacrificial mask is comprised of a series of lines and the spacer mask has spacer lines adjacent to the sidewalls of the series of lines. Next, the spacer mask is cropped. Finally, the sacrificial mask is removed to provide a cropped spacer mask. The cropped spacer mask doubles the frequency of the series of lines of the sacrificial mask.
摘要翻译：对半导体掩模的制造方法进行说明。首先提供具有牺牲掩模和间隔掩模的半导体叠层。牺牲掩模由一系列线组成，并且间隔物掩模具有与该系列线的侧壁相邻的间隔线。接下来，裁剪间隔掩模。最后，去除牺牲掩模以提供裁剪的间隔物掩模。裁剪的间隔掩模将牺牲掩模的一系列线的频率加倍。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式