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1. 发明授权

US08673783B2 Metal conductor chemical mechanical polish 有权
标题翻译：金属导体化学机械抛光
公开(公告)号：US08673783B2
公开(公告)日：2014-03-18
申请号：US12829664
申请日：2010-07-02
申请人： Huang Soon Kang , Han-Hsin Kuo , Chi-Ming Yang , Shwang-Ming Jeng , Chin-Hsiang Lin
发明人： Huang Soon Kang , Han-Hsin Kuo , Chi-Ming Yang , Shwang-Ming Jeng , Chin-Hsiang Lin
IPC分类号： H01L21/302
CPC分类号： H01L23/5386 , H01L21/02074 , H01L21/28079 , H01L21/67011 , H01L21/7684 , H01L29/495 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method of fabricating a semiconductor device, a semiconductor device fabricated by such a method, and a chemical mechanical polishing (CMP) tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device includes providing an integrated circuit (IC) wafer including a metal conductor in a trench of a dielectric layer over a substrate, and performing a chemical mechanical polishing (CMP) process to planarize the metal conductor and the dielectric layer. The method further includes cleaning the planarized metal conductor and dielectric layer to remove residue from the CMP process, rinsing the cleaned metal conductor and dielectric layer with an alcohol, and drying the rinsed metal conductor and dielectric layer in an inert gas environment.
摘要翻译：本公开提供了一种制造半导体器件的方法，通过这种方法制造的半导体器件和用于执行这种方法的化学机械抛光（CMP）工具。在一个实施例中，制造半导体器件的方法包括在衬底上的电介质层的沟槽中提供包括金属导体的集成电路（IC）晶片，以及执行化学机械抛光（CMP）工艺以平坦化金属导体和电介质层。该方法还包括清洁平坦化的金属导体和电介质层以除去CMP工艺中的残留物，用醇漂洗清洁的金属导体和介电层，并在惰性气体环境中干燥漂洗的金属导体和电介质层。

2. 发明申请

US20120001262A1 METAL CONDUCTOR CHEMICAL MECHANICAL POLISH 有权
标题翻译：金属导体化学机械抛光
公开(公告)号：US20120001262A1
公开(公告)日：2012-01-05
申请号：US12829664
申请日：2010-07-02
申请人： Huang Soon Kang , Han-Hsin Kuo , Chi-Ming Yang , Shwang-Ming Jeng , Chin-Hsiang Lin
发明人： Huang Soon Kang , Han-Hsin Kuo , Chi-Ming Yang , Shwang-Ming Jeng , Chin-Hsiang Lin
IPC分类号： H01L29/78 , B24B7/00 , H01L21/306
CPC分类号： H01L23/5386 , H01L21/02074 , H01L21/28079 , H01L21/67011 , H01L21/7684 , H01L29/495 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method of fabricating a semiconductor device, a semiconductor device fabricated by such a method, and a chemical mechanical polishing (CMP) tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device includes providing an integrated circuit (IC) wafer including a metal conductor in a trench of a dielectric layer over a substrate, and performing a chemical mechanical polishing (CMP) process to planarize the metal conductor and the dielectric layer. The method further includes cleaning the planarized metal conductor and dielectric layer to remove residue from the CMP process, rinsing the cleaned metal conductor and dielectric layer with an alcohol, and drying the rinsed metal conductor and dielectric layer in an inert gas environment.
摘要翻译：本公开提供了一种制造半导体器件的方法，通过这种方法制造的半导体器件和用于执行这种方法的化学机械抛光（CMP）工具。在一个实施例中，制造半导体器件的方法包括在衬底上的电介质层的沟槽中提供包括金属导体的集成电路（IC）晶片，以及执行化学机械抛光（CMP）工艺以平坦化金属导体和电介质层。该方法还包括清洁平坦化的金属导体和电介质层以除去CMP工艺中的残留物，用醇漂洗清洁的金属导体和介电层，并在惰性气体环境中干燥漂洗的金属导体和电介质层。

3. 发明授权

US09138861B2 CMP pad cleaning apparatus 有权
标题翻译： CMP垫清洁装置
公开(公告)号：US09138861B2
公开(公告)日：2015-09-22
申请号：US13396854
申请日：2012-02-15
申请人： Jiann Lih Wu , Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Jiann Lih Wu , Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： B24B53/00 , B24B53/017
CPC分类号： B24B53/017
摘要： The present disclosure relates to a two-phase cleaning element that enhances polishing pad cleaning so as to prevent wafer scratches and contamination in chemical mechanical polishing (CMP) processes. In some embodiments, the two-phase pad cleaning element comprises a first cleaning element and a second cleaning element configured to successively operate upon a section of a CMP polishing pad. The first cleaning element comprises a megasonic cleaning jet configured to utilize cavitation energy to dislodge particles embedded in the CMP polishing pad without damaging the surface of the polishing pad. The second cleaning element is configured to apply a high pressure mist, comprising two fluids, to remove by-products from the CMP polishing pad. By using megasonic cleaning to dislodge embedded particles a two-fluid mist to flush away by-products (e.g., including the dislodged embedded particles), the two-phase pad cleaning element enhances polishing pad cleaning.
摘要翻译：本公开内容涉及增强抛光垫清洁以防止晶片划伤和化学机械抛光（CMP）工艺中的污染的两相清洁元件。在一些实施例中，两相垫清洁元件包括第一清洁元件和第二清洁元件，其被配置为在CMP抛光垫的一部分上连续操作。第一清洁元件包括配置为利用空穴能量去除嵌入在CMP抛光垫中的颗粒而不损坏抛光垫的表面的兆声波清洗喷嘴。第二清洁元件构造成施加包括两种流体的高压雾以从CMP抛光垫移除副产物。通过使用兆声波清洗来移除嵌入式颗粒的双液雾以冲走副产物（例如，包括移出的嵌入颗粒），两相垫清洁元件增强了抛光垫清洁。

4. 发明授权

US09242342B2 Manufacture and method of making the same 有权
标题翻译：制造和制作方法
公开(公告)号：US09242342B2
公开(公告)日：2016-01-26
申请号：US13420366
申请日：2012-03-14
申请人： Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： B24B53/12 , B05D1/12 , B24B53/017
CPC分类号： B24B37/20 , B24B53/017
摘要： A manufacture includes a substrate, a reinforcement layer over the substrate, and abrasive particles over the substrate. The abrasive particles are partially buried in the reinforcement layer. Upper tips of the abrasive particles are substantially coplanar.
摘要翻译：一种制造方法包括基底，基底上的增强层，以及基底上的研磨颗粒。研磨颗粒部分地埋在加强层中。磨料颗粒的上尖端基本上共面。

5. 发明授权

US10857649B2 Method and apparatus for performing a polishing process in semiconductor fabrication 有权
公开(公告)号：US10857649B2
公开(公告)日：2020-12-08
申请号：US13240856
申请日：2011-09-22
申请人： Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： B24B37/32 , B24B9/06
摘要： The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a polishing head that is operable to perform a polishing process to a wafer. The apparatus includes a retaining ring that is rotatably coupled to the polishing head. The retaining ring is operable to secure the wafer to be polished. The apparatus includes a soft material component located within the retaining ring. The soft material component is softer than silicon. The soft material component is operable to grind a bevel region of the wafer during the polishing process. The apparatus includes a spray nozzle that is rotatably coupled to the polishing head. The spray nozzle is operable to dispense a cleaning solution to the bevel region of the wafer during the polishing process.

6. 发明申请

US20130078810A1 METHOD AND APPARATUS FOR PERFORMING A POLISHING PROCESS IN SEMICONDUCTOR FABRICATION 审中-公开
标题翻译：用于在半导体制造中执行抛光工艺的方法和装置
公开(公告)号：US20130078810A1
公开(公告)日：2013-03-28
申请号：US13240856
申请日：2011-09-22
申请人： Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： H01L21/302 , B24B53/00 , B24B7/00
CPC分类号： B24B37/32 , B24B9/065
摘要： The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a polishing head that is operable to perform a polishing process to a wafer. The apparatus includes a retaining ring that is rotatably coupled to the polishing head. The retaining ring is operable to secure the wafer to be polished. The apparatus includes a soft material component located within the retaining ring. The soft material component is softer than silicon. The soft material component is operable to grind a bevel region of the wafer during the polishing process. The apparatus includes a spray nozzle that is rotatably coupled to the polishing head. The spray nozzle is operable to dispense a cleaning solution to the bevel region of the wafer during the polishing process.
摘要翻译：本公开提供了一种用于制造半导体器件的装置。该装置包括可操作以对晶片执行抛光处理的抛光头。该装置包括可旋转地联接到抛光头的保持环。保持环可操作以固定要抛光的晶片。该装置包括位于保持环内的软材料部件。软材料组分比硅软。柔性材料部件可操作以在抛光过程中研磨晶片的斜面区域。该装置包括可旋转地联接到抛光头的喷嘴。喷射喷嘴可操作以在抛光过程中将清洁溶液分配到晶片的斜面区域。

7. 发明申请

US20130244552A1 MANUFACTURE AND METHOD OF MAKING THE SAME 有权
标题翻译：制造及其制造方法
公开(公告)号：US20130244552A1
公开(公告)日：2013-09-19
申请号：US13420366
申请日：2012-03-14
申请人： Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： B24B53/12 , B05D1/12
CPC分类号： B24B37/20 , B24B53/017
摘要： A manufacture includes a substrate, a reinforcement layer over the substrate, and abrasive particles over the substrate. The abrasive particles are partially buried in the reinforcement layer. Upper tips of the abrasive particles are substantially coplanar.
摘要翻译：一种制造方法包括基底，基底上的增强层，以及基底上的研磨颗粒。研磨颗粒部分地埋在加强层中。磨料颗粒的上尖端基本上共面。

8. 发明申请

US20120129431A1 APPARATUS AND METHOD FOR TARGET THICKNESS AND SURFACE PROFILE UNIFORMITY CONTROL OF MULTI-HEAD CHEMICAL MECHANICAL POLISHING PROCESS 有权
标题翻译：目标厚度和表面轮廓的设备和方法多头化学机械抛光过程的均匀性控制
公开(公告)号：US20120129431A1
公开(公告)日：2012-05-24
申请号：US12953584
申请日：2010-11-24
申请人： KEUNG HUI , Jin-Ning Sung , Huang Soon Kang , Yen-Di Tsen , Jong-I Mou
发明人： KEUNG HUI , Jin-Ning Sung , Huang Soon Kang , Yen-Di Tsen , Jong-I Mou
IPC分类号： B24B1/00 , B24B51/00
CPC分类号： H01L21/30625 , B24B37/005 , B24B37/042 , B24B37/107 , B24B49/02 , B24B49/04 , B24B49/16 , B24B51/00 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.
摘要翻译：公开了一种用于提供多头化学机械抛光（CMP）工艺的目标厚度和表面轮廓均匀性控制的装置和方法。一种示例性方法包括提供至少两个晶片; 确定所述至少两个晶片中的每一个的表面轮廓; 基于所述至少两个晶片的表面轮廓确定用于化学机械抛光（CMP）工艺的操作模式; 基于所述操作模式确定所述至少两个晶片中的每一个的CMP抛光配方; 以及基于所确定的CMP抛光配方在所述至少两个晶片上执行CMP处理。

9. 发明申请

US20100210189A1 SLURRY DISPENSER FOR CHEMICAL MECHANICAL POLISHING (CMP) APPARATUS AND METHOD 有权
标题翻译：化学机械抛光（CMP）装置和方法的浆料分配器
公开(公告)号：US20100210189A1
公开(公告)日：2010-08-19
申请号：US12370662
申请日：2009-02-13
申请人： Kun-Ku Hung , Zin-Chang Wei , Huang Soon Kang , Chyi-Shyuan Chern
发明人： Kun-Ku Hung , Zin-Chang Wei , Huang Soon Kang , Chyi-Shyuan Chern
IPC分类号： B24B57/02 , B24B7/20 , B24B29/00
CPC分类号： B24B57/02 , B24B37/04
摘要： A chemical mechanical polishing method and apparatus provides a deformable, telescoping slurry dispenser arm coupled to a dispenser head that may be arcuate in shape and may also be a bendable telescoping member that can be adjusted to vary the number of slurry dispenser ports and the degree of curvature of the dispenser head. The dispenser arm may additionally include slurry dispenser ports therein. The dispenser arm may advantageously be formed of a plurality of nested tubes that are slidable with respect to one another. The adjustable dispenser arm may pivot about a pivot point and can be variously positioned to accommodate different sized polishing pads used to polish substrates of different dimensions and the bendable, telescoping slurry dispenser arm and dispenser head provide uniform slurry distribution to any of various wafer polishing locations, effective slurry usage and uniform polishing profiles in each case.
摘要翻译：化学机械抛光方法和装置提供了可变形的，可伸缩的浆料分配器臂，其联接到分配器头部，其可以是弓形的形状，并且还可以是可弯曲的伸缩构件，其可以被调节以改变浆料分配器端口的数量和分配头的曲率。分配器臂可以另外包括其中的浆料分配器端口。分配器臂可以有利地由可相对于彼此滑动的多个嵌套管形成。可调节的分配器臂可围绕枢转点枢转并且可以被不同地定位以适应用于抛光不同尺寸的基板的不同尺寸的抛光垫，并且可弯曲的可伸缩浆料分配器臂和分配器头部向各种晶片抛光位置，有效的浆料使用和均匀的抛光轮廓在每种情况下。

10. 发明授权

US09102033B2 Apparatus and method for target thickness and surface profile uniformity control of multi-head chemical mechanical polishing process 有权
标题翻译：多头化学机械抛光工艺的目标厚度和表面轮廓均匀性控制的装置和方法
公开(公告)号：US09102033B2
公开(公告)日：2015-08-11
申请号：US12953584
申请日：2010-11-24
申请人： Keung Hui , Jin-Ning Sung , Huang Soon Kang , Yen-Di Tsen , Jong-I Mou
发明人： Keung Hui , Jin-Ning Sung , Huang Soon Kang , Yen-Di Tsen , Jong-I Mou
IPC分类号： B24B1/00 , B24B51/00 , B24B37/005 , B24B37/04 , B24B37/10 , B24B49/02 , H01L21/66
CPC分类号： H01L21/30625 , B24B37/005 , B24B37/042 , B24B37/107 , B24B49/02 , B24B49/04 , B24B49/16 , B24B51/00 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.
摘要翻译：公开了一种用于提供多头化学机械抛光（CMP）工艺的目标厚度和表面轮廓均匀性控制的装置和方法。一种示例性方法包括提供至少两个晶片; 确定所述至少两个晶片中的每一个的表面轮廓; 基于所述至少两个晶片的表面轮廓确定用于化学机械抛光（CMP）工艺的操作模式; 基于所述操作模式确定所述至少两个晶片中的每一个的CMP抛光配方; 以及基于所确定的CMP抛光配方在所述至少两个晶片上执行CMP处理。

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