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1. 发明授权

US08294124B2 Scanning method and system using 2-D ion implanter 有权
标题翻译： 2-D离子注入机的扫描方法和系统
公开(公告)号：US08294124B2
公开(公告)日：2012-10-23
申请号：US12688086
申请日：2010-01-15
申请人： Keung Hui , Chun-Lin Chang
发明人： Keung Hui , Chun-Lin Chang
IPC分类号： G21K5/08 , G21K5/10 , G21K5/04 , H01L21/68
CPC分类号： H01J37/20 , H01J37/3171 , H01J2237/20228
摘要： An ion implanter system has a movable wafer support for holding a semiconductor wafer and a beam source that generates a beam for implanting ions in the semiconductor wafer while the wafer is moving. A plurality of path segments are identified, through which the wafer support is to move to expose the semiconductor wafer to the ion beam. A first position and a second position are identified for each respective one of the plurality of path segments, such that, when the wafer is in each first position and each second position, a perimeter of the beam projected in a plane of the wafer is tangent to a perimeter of the wafer. The ion implanter is configured to automatically move the wafer along each of the plurality of path segments, starting at the respective first position on each respective path segment and stopping at the respective second position on the same segment, so as to expose the wafer to the beam for implanting ions in the wafer.
摘要翻译：离子注入机系统具有用于保持半导体晶片的可移动晶片支撑件和在晶片移动时产生用于在半导体晶片中注入离子的光束的光束源。识别多个路径段，晶片支撑件将通过该路径段移动以将半导体晶片暴露于离子束。针对多个路径段中的每一个识别第一位置和第二位置，使得当晶片处于每个第一位置和每个第二位置时，投影在晶片平面中的光束的周边是切线的到晶片的周边。离子注入器被配置为沿着每个相应的路径段上的相应的第一位置自动地移动晶片沿着多个路径段中的每一个，并且在相同的段上的相应的第二位置处停止，以将晶片暴露于用于在晶片中注入离子的光束。

2. 发明申请

US20120129431A1 APPARATUS AND METHOD FOR TARGET THICKNESS AND SURFACE PROFILE UNIFORMITY CONTROL OF MULTI-HEAD CHEMICAL MECHANICAL POLISHING PROCESS 有权
标题翻译：目标厚度和表面轮廓的设备和方法多头化学机械抛光过程的均匀性控制
公开(公告)号：US20120129431A1
公开(公告)日：2012-05-24
申请号：US12953584
申请日：2010-11-24
申请人： KEUNG HUI , Jin-Ning Sung , Huang Soon Kang , Yen-Di Tsen , Jong-I Mou
发明人： KEUNG HUI , Jin-Ning Sung , Huang Soon Kang , Yen-Di Tsen , Jong-I Mou
IPC分类号： B24B1/00 , B24B51/00
CPC分类号： H01L21/30625 , B24B37/005 , B24B37/042 , B24B37/107 , B24B49/02 , B24B49/04 , B24B49/16 , B24B51/00 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.
摘要翻译：公开了一种用于提供多头化学机械抛光（CMP）工艺的目标厚度和表面轮廓均匀性控制的装置和方法。一种示例性方法包括提供至少两个晶片; 确定所述至少两个晶片中的每一个的表面轮廓; 基于所述至少两个晶片的表面轮廓确定用于化学机械抛光（CMP）工艺的操作模式; 基于所述操作模式确定所述至少两个晶片中的每一个的CMP抛光配方; 以及基于所确定的CMP抛光配方在所述至少两个晶片上执行CMP处理。

3. 发明授权

US08129279B2 Chemical mechanical polish process control for improvement in within-wafer thickness uniformity 有权
标题翻译：化学机械抛光过程控制，以提高晶片内厚度均匀性
公开(公告)号：US08129279B2
公开(公告)日：2012-03-06
申请号：US12250239
申请日：2008-10-13
申请人： Shen-Nan Lee , Ying-Mei Lin , Yu-Jen Cheng , Keung Hui , Huan-Just Lin
发明人： Shen-Nan Lee , Ying-Mei Lin , Yu-Jen Cheng , Keung Hui , Huan-Just Lin
IPC分类号： H01L21/302
CPC分类号： B24B37/013 , B24B49/12
摘要： A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile.
摘要翻译：在晶片上进行化学机械抛光（CMP）工艺的方法包括提供晶片; 确定晶片表面上的特征的厚度分布; 并且在确定厚度分布的步骤之后，使用抛光配方对特征进行高速率CMP处理，以基本上实现特征的晶片内厚度均匀性。根据厚度分布确定抛光配方。

4. 发明申请

US20120009692A1 System and Method of Dosage Profile Control 有权
标题翻译：剂量分布控制系统与方法
公开(公告)号：US20120009692A1
公开(公告)日：2012-01-12
申请号：US12831699
申请日：2010-07-07
申请人： Keung Hui , Chun-Lin Chang , Jong-I Mou
发明人： Keung Hui , Chun-Lin Chang , Jong-I Mou
IPC分类号： H01L21/66 , H01J37/317 , H01J37/20
CPC分类号： C23C14/48 , H01J37/302 , H01J37/304 , H01J37/3171 , H01J2237/30461 , H01J2237/31703 , H01L21/265 , H01L22/14
摘要： A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.
摘要翻译：公开了一种用于控制剂量分布的系统和方法。一个实施例包括将晶片分离成网格阵列的组件，并且基于测试来分配每个网格组件所需的剂量分布，以补偿晶片的不同区域之间的拓扑差异。期望的剂量被分解为定向剂量组分，并且定向剂量组分转化成用于离子注入机的离子束的扫描速度。速度可以被馈送到离子注入机中以控制晶片到光束的速度，从而控制注入。

5. 发明授权

US08309444B2 System and method of dosage profile control 有权
标题翻译：剂量分布控制系统和方法
公开(公告)号：US08309444B2
公开(公告)日：2012-11-13
申请号：US12831699
申请日：2010-07-07
申请人： Keung Hui , Chun-Lin Chang , Jong-I Mou
发明人： Keung Hui , Chun-Lin Chang , Jong-I Mou
IPC分类号： H01L21/425
CPC分类号： C23C14/48 , H01J37/302 , H01J37/304 , H01J37/3171 , H01J2237/30461 , H01J2237/31703 , H01L21/265 , H01L22/14
摘要： A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.
摘要翻译：公开了一种用于控制剂量分布的系统和方法。一个实施例包括将晶片分离成网格阵列的组件，并且基于测试来分配每个网格组件所需的剂量分布，以补偿晶片的不同区域之间的拓扑差异。期望的剂量被分解为定向剂量组分，并且定向剂量组分转化成用于离子注入机的离子束的扫描速度。速度可以被馈送到离子注入机中以控制晶片到光束的速度，从而控制注入。

6. 发明授权

US08295965B2 Semiconductor processing dispatch control 有权
标题翻译：半导体处理调度控制
公开(公告)号：US08295965B2
公开(公告)日：2012-10-23
申请号：US12839014
申请日：2010-07-19
申请人： Sunny Wu , Yen-Di Tsen , Chun-Hsien Lin , Keung Hui , Jo Fei Wang , Jong-I Mou
发明人： Sunny Wu , Yen-Di Tsen , Chun-Hsien Lin , Keung Hui , Jo Fei Wang , Jong-I Mou
IPC分类号： G06F19/00 , G01R31/26
CPC分类号： G05B19/4187 , G05B19/042 , G05B19/41865 , G05B2219/2602 , G05B2219/32237 , G05B2219/32423 , G05B2219/45031 , G05B2219/50065 , Y02P90/20
摘要： An embodiment is a method for semiconductor processing control. The method comprises identifying a key process stage from a plurality of process stages based on a parameter of processed wafers, forecasting a trend for a wafer processed by the key process stage and some of the plurality of process stages based on the parameter, and dispatching the wafer to one of a first plurality of tools in a tuning process stage. The one of the first plurality of tools is determined based on the trend.
摘要翻译：实施例是用于半导体处理控制的方法。该方法包括基于处理的晶片的参数从多个处理阶段识别关键处理阶段，基于该参数来预测由密钥处理阶段处理的晶片的趋势以及多个处理阶段中的一些，以及调度晶片转换为调谐处理阶段中的第一多个工具之一。根据趋势确定第一组多个工具中的一个。

7. 发明申请

US20120164918A1 Chemical Mechanical Polish Process Control for Improvement in Within-Wafer Thickness Uniformity 审中-公开
标题翻译：化学机械抛光过程控制，提高晶片内厚度均匀性
公开(公告)号：US20120164918A1
公开(公告)日：2012-06-28
申请号：US13412260
申请日：2012-03-05
申请人： Shen-Nan Lee , Ying-Mei Lin , Yu-Jen Cheng , Keung Hui , Huan-Just Lin
发明人： Shen-Nan Lee , Ying-Mei Lin , Yu-Jen Cheng , Keung Hui , Huan-Just Lin
IPC分类号： H01L21/302 , B24B49/12
CPC分类号： B24B37/013 , B24B49/12
摘要： A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile.
摘要翻译：在晶片上进行化学机械抛光（CMP）工艺的方法包括提供晶片; 确定晶片表面上的特征的厚度分布; 并且在确定厚度分布的步骤之后，使用抛光配方对特征进行高速率CMP处理，以基本上实现特征的晶片内厚度均匀性。根据厚度分布确定抛光配方。

8. 发明申请

US20110174991A1 SCANNING METHOD AND SYSTEM USING 2-D ION IIMPLANTER 有权
标题翻译：扫描方法和使用二维离子印迹的系统
公开(公告)号：US20110174991A1
公开(公告)日：2011-07-21
申请号：US12688086
申请日：2010-01-15
申请人： Keung HUI , Chun-Lin CHANG
发明人： Keung HUI , Chun-Lin CHANG
IPC分类号： G21K5/10 , H01L21/68 , G21K5/08 , G21K5/04
CPC分类号： H01J37/20 , H01J37/3171 , H01J2237/20228
摘要： An ion implanter system has a movable wafer support for holding a semiconductor wafer and a beam source that generates a beam for implanting ions in the semiconductor wafer while the wafer is moving. A plurality of path segments are identified, through which the wafer support is to move to expose the semiconductor wafer to the ion beam. A first position and a second position are identified for each respective one of the plurality of path segments, such that, when the wafer is in each first position and each second position, a perimeter of the beam projected in a plane of the wafer is tangent to a perimeter of the wafer. The ion implanter is configured to automatically move the wafer along each of the plurality of path segments, starting at the respective first position on each respective path segment and stopping at the respective second position on the same segment, so as to expose the wafer to the beam for implanting ions in the wafer.
摘要翻译：离子注入机系统具有用于保持半导体晶片的可移动晶片支撑件和在晶片移动时产生用于在半导体晶片中注入离子的光束的光束源。识别多个路径段，晶片支撑件将通过该路径段移动以将半导体晶片暴露于离子束。针对多个路径段中的每一个识别第一位置和第二位置，使得当晶片处于每个第一位置和每个第二位置时，投影在晶片平面中的光束的周边是切线的到晶片的周边。离子注入机被配置为沿着每个相应路径段上的相应第一位置自动地移动晶片沿着多个路径段中的每一个，并且在相同的段上的相应的第二位置处停止，以将晶片暴露于用于在晶片中注入离子的光束。

9. 发明授权

US09132523B2 Chemical mechanical polish process control for improvement in within-wafer thickness uniformity 有权
标题翻译：化学机械抛光过程控制，以提高晶片内厚度均匀性
公开(公告)号：US09132523B2
公开(公告)日：2015-09-15
申请号：US13412260
申请日：2012-03-05
申请人： Shen-Nan Lee , Ying-Mei Lin , Yu-Jen Cheng , Keung Hui , Huan-Just Lin
发明人： Shen-Nan Lee , Ying-Mei Lin , Yu-Jen Cheng , Keung Hui , Huan-Just Lin
IPC分类号： H01L21/302 , B24B49/12 , B24B37/013
CPC分类号： B24B37/013 , B24B49/12
摘要： A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile.
摘要翻译：在晶片上进行化学机械抛光（CMP）工艺的方法包括提供晶片; 确定晶片表面上的特征的厚度分布; 并且在确定厚度分布的步骤之后，使用抛光配方对特征进行高速率CMP处理，以基本上实现特征的晶片内厚度均匀性。根据厚度分布确定抛光配方。

10. 发明授权

US09102033B2 Apparatus and method for target thickness and surface profile uniformity control of multi-head chemical mechanical polishing process 有权
标题翻译：多头化学机械抛光工艺的目标厚度和表面轮廓均匀性控制的装置和方法
公开(公告)号：US09102033B2
公开(公告)日：2015-08-11
申请号：US12953584
申请日：2010-11-24
申请人： Keung Hui , Jin-Ning Sung , Huang Soon Kang , Yen-Di Tsen , Jong-I Mou
发明人： Keung Hui , Jin-Ning Sung , Huang Soon Kang , Yen-Di Tsen , Jong-I Mou
IPC分类号： B24B1/00 , B24B51/00 , B24B37/005 , B24B37/04 , B24B37/10 , B24B49/02 , H01L21/66
CPC分类号： H01L21/30625 , B24B37/005 , B24B37/042 , B24B37/107 , B24B49/02 , B24B49/04 , B24B49/16 , B24B51/00 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.
摘要翻译：公开了一种用于提供多头化学机械抛光（CMP）工艺的目标厚度和表面轮廓均匀性控制的装置和方法。一种示例性方法包括提供至少两个晶片; 确定所述至少两个晶片中的每一个的表面轮廓; 基于所述至少两个晶片的表面轮廓确定用于化学机械抛光（CMP）工艺的操作模式; 基于所述操作模式确定所述至少两个晶片中的每一个的CMP抛光配方; 以及基于所确定的CMP抛光配方在所述至少两个晶片上执行CMP处理。

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