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1. 发明授权

US09138861B2 CMP pad cleaning apparatus 有权
标题翻译： CMP垫清洁装置
公开(公告)号：US09138861B2
公开(公告)日：2015-09-22
申请号：US13396854
申请日：2012-02-15
申请人： Jiann Lih Wu , Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Jiann Lih Wu , Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： B24B53/00 , B24B53/017
CPC分类号： B24B53/017
摘要： The present disclosure relates to a two-phase cleaning element that enhances polishing pad cleaning so as to prevent wafer scratches and contamination in chemical mechanical polishing (CMP) processes. In some embodiments, the two-phase pad cleaning element comprises a first cleaning element and a second cleaning element configured to successively operate upon a section of a CMP polishing pad. The first cleaning element comprises a megasonic cleaning jet configured to utilize cavitation energy to dislodge particles embedded in the CMP polishing pad without damaging the surface of the polishing pad. The second cleaning element is configured to apply a high pressure mist, comprising two fluids, to remove by-products from the CMP polishing pad. By using megasonic cleaning to dislodge embedded particles a two-fluid mist to flush away by-products (e.g., including the dislodged embedded particles), the two-phase pad cleaning element enhances polishing pad cleaning.
摘要翻译：本公开内容涉及增强抛光垫清洁以防止晶片划伤和化学机械抛光（CMP）工艺中的污染的两相清洁元件。在一些实施例中，两相垫清洁元件包括第一清洁元件和第二清洁元件，其被配置为在CMP抛光垫的一部分上连续操作。第一清洁元件包括配置为利用空穴能量去除嵌入在CMP抛光垫中的颗粒而不损坏抛光垫的表面的兆声波清洗喷嘴。第二清洁元件构造成施加包括两种流体的高压雾以从CMP抛光垫移除副产物。通过使用兆声波清洗来移除嵌入式颗粒的双液雾以冲走副产物（例如，包括移出的嵌入颗粒），两相垫清洁元件增强了抛光垫清洁。

2. 发明申请

US20130210173A1 Multiple Zone Temperature Control for CMP 审中-公开
标题翻译：多区域温度控制CMP
公开(公告)号：US20130210173A1
公开(公告)日：2013-08-15
申请号：US13372872
申请日：2012-02-14
申请人： Jiann Lih Wu , Bo-I Lee , Soon Kang Huang , Chih-I Peng , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Jiann Lih Wu , Bo-I Lee , Soon Kang Huang , Chih-I Peng , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： H01L21/66 , B24B49/00
CPC分类号： H01L22/12 , B24B37/013 , B24B37/015 , B24B49/105 , B24B49/14 , H01L22/26
摘要： To provide improved planarization, techniques in accordance with this disclosure include a CMP station that includes a plurality of concentric temperature control elements arranged over a number of concentric to-be-polished wafer surfaces. During polishing, a wafer surface planarity sensor monitors relative heights of the concentric to-be-polished wafer surfaces, and adjusts the temperatures of the concentric temperature control elements to provide an extremely well planarized wafer surface. Other systems and methods are also disclosed.
摘要翻译：为了提供改进的平面化，根据本公开的技术包括CMP站，其包括布置在多个同心待抛光晶片表面上的多个同心温度控制元件。在抛光期间，晶片表面平面度传感器监测同心待抛光的晶片表面的相对高度，并且调节同心温度控制元件的温度以提供非常好的平坦化晶片表面。还公开了其它系统和方法。

3. 发明申请

US20130217306A1 CMP Groove Depth and Conditioning Disk Monitoring 审中-公开
标题翻译： CMP沟槽深度和调节盘监控
公开(公告)号：US20130217306A1
公开(公告)日：2013-08-22
申请号：US13397845
申请日：2012-02-16
申请人： Jiann Lih Wu , Bo-I Lee , Soon Kang Huang , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Jiann Lih Wu , Bo-I Lee , Soon Kang Huang , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： B24B49/16 , B24B49/18
CPC分类号： B24B49/16 , B24B37/005 , B24B49/18
摘要： Some embodiments relate to a chemical mechanical polishing (CMP) system. The CMP system includes a polishing pad having a polishing surface, and a wafer carrier to retain a wafer proximate to the polishing surface during polishing. A motor assembly rotates the polishing pad and concurrently rotates the wafer during polishing of the wafer. A conditioning disk has a conditioning surface that is in frictional engagement with the polishing surface during polishing. A torque measurement element measures a torque exerted by the motor assembly during polishing. A condition surface analyzer determines a surface condition of the conditioning surface or the polishing surface based on the measured torque. Other systems and methods are also disclosed.
摘要翻译：一些实施方案涉及化学机械抛光（CMP）系统。 CMP系统包括具有抛光表面的抛光垫和在抛光期间将晶片保持靠近抛光表面的晶片载体。电机组件旋转抛光垫并在晶片抛光期间同时旋转晶片。调理盘具有在抛光期间与抛光表面摩擦接合的调节表面。扭矩测量元件测量在抛光期间由电动机组件施加的扭矩。条件表面分析器基于测量的扭矩来确定调节表面或抛光表面的表面状态。还公开了其它系统和方法。

4. 发明申请

US20130210323A1 CMP Pad Cleaning Apparatus 有权
标题翻译： CMP垫清洁装置
公开(公告)号：US20130210323A1
公开(公告)日：2013-08-15
申请号：US13396854
申请日：2012-02-15
申请人： Jiann Lih Wu , Bo-I Lee , Soon Kang Huang , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Jiann Lih Wu , Bo-I Lee , Soon Kang Huang , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： B24B1/00 , B24B41/06
CPC分类号： B24B53/017
摘要： The present disclosure relates to a two-phase cleaning element that enhances polishing pad cleaning so as to prevent wafer scratches and contamination in chemical mechanical polishing (CMP) processes. In some embodiments, the two-phase pad cleaning element comprises a first cleaning element and a second cleaning element configured to successively operate upon a section of a CMP polishing pad. The first cleaning element comprises a megasonic cleaning jet configured to utilize cavitation energy to dislodge particles embedded in the CMP polishing pad without damaging the surface of the polishing pad. The second cleaning element is configured to apply a high pressure mist, comprising two fluids, to remove by-products from the CMP polishing pad. By using megasonic cleaning to dislodge embedded particles a two-fluid mist to flush away by-products (e.g., including the dislodged embedded particles), the two-phase pad cleaning element enhances polishing pad cleaning.
摘要翻译：本公开内容涉及增强抛光垫清洁以防止晶片划伤和化学机械抛光（CMP）工艺中的污染的两相清洁元件。在一些实施例中，两相垫清洁元件包括第一清洁元件和第二清洁元件，其被配置为在CMP抛光垫的一部分上连续操作。第一清洁元件包括配置为利用空穴能量去除嵌入在CMP抛光垫中的颗粒而不损坏抛光垫的表面的兆声波清洗喷嘴。第二清洁元件构造成施加包括两种流体的高压雾以从CMP抛光垫移除副产物。通过使用兆声波清洗来移除嵌入式颗粒的双液雾以冲走副产物（例如，包括移出的嵌入颗粒），两相垫清洁元件增强了抛光垫清洁。

5. 发明授权

US06998013B2 CMP apparatus polishing head with concentric pressure zones 失效
标题翻译： CMP设备抛光头与同心压力区
公开(公告)号：US06998013B2
公开(公告)日：2006-02-14
申请号：US10268485
申请日：2002-10-10
申请人： Chin-Tsan Jan , Jiann-Lih Wu
发明人： Chin-Tsan Jan , Jiann-Lih Wu
IPC分类号： B24B49/00
CPC分类号： B24B37/30 , B24B49/16
摘要： A CMP polishing head having multiple concentric pressure zones for selectively increasing polishing pressure against selected regions of a semiconductor wafer in order to compensate for variations in polishing rates on the wafer surface otherwise caused by ridges or other non-uniformities in the wafer surface. The polishing head of the present invention comprises multiple, concentric, inflatable pressure rings each of which may be selectively inflated to increase the polishing pressure against a concentric ridge or material elevation on the corresponding concentric region of the wafer surface and increase the polishing rate of the concentric ridge or elevation between the rotating polishing head and a stationary polishing pad. A channel selector may be included in the polishing head for selectively aligning an air/pressure vacuum source with a selected one of multiple pressure tubes that connect to the respective pressure rings.
摘要翻译：一种具有多个同心压力区域的CMP抛光头，用于选择性地增加对半导体晶片的选定区域的抛光压力，以便补偿晶片表面上的抛光速率的变化，否则由晶片表面中的脊或其它不均匀性引起。本发明的抛光头包括多个同心的，可膨胀的压力环，每个压力环可以选择性地膨胀以增加针对晶片表面的相应同心区域上的同心脊或材料高度的抛光压力，并且增加抛光速率旋转的抛光头和固定的抛光垫之间的同心的脊或高度。通道选择器可以包括在抛光头中，用于选择性地将空气/压力真空源与连接到各个压力环的多个压力管中的选定的一个对准。

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