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1. 发明申请

US20050218000A1 Conditioning of contact leads for metal plating systems 审中-公开
标题翻译：金属电镀系统接触导线的调节
公开(公告)号：US20050218000A1
公开(公告)日：2005-10-06
申请号：US11100344
申请日：2005-04-06
申请人： Hooman Hafezi , Joseph Yahalom , Roman Mostovoy , Bo Zheng , Aron Rosenfeld , You Wang , Nicolay Kovarsky
发明人： Hooman Hafezi , Joseph Yahalom , Roman Mostovoy , Bo Zheng , Aron Rosenfeld , You Wang , Nicolay Kovarsky
IPC分类号： C25D5/54 , C25D21/12
CPC分类号： C25D21/12 , C25D5/54
摘要： Embodiments of the invention provide a method for conditioning contacts of an electrochemical metal plating system. The method includes deplating the contacts by supplying a reversed biased energy and monitoring electrical measurements of the plating system in real-time such that the endpoint of a deplating process can be determined. In different embodiments, the method includes the use of a constant current or voltage, variable current or voltage, or combinations thereof for conditioning the contacts.
摘要翻译：本发明的实施例提供一种用于调节电化学金属电镀系统的触点的方法。该方法包括通过提供反向偏置的能量并实时监测电镀系统的电测量来使触点脱锌，从而可以确定脱镀工艺的端点。在不同的实施例中，该方法包括使用恒定电流或电压，可变电流或电压或其组合来调节触点。

2. 发明授权

US08304193B2 Method for conducting an autocatalytic reaction in plugs in a microfluidic system 有权
标题翻译：在微流体系统中的插塞中进行自催化反应的方法
公开(公告)号：US08304193B2
公开(公告)日：2012-11-06
申请号：US13024155
申请日：2011-02-09
申请人： Rustem F Ismagilov , Joshua David Tice , Cory John Gerdts , Bo Zheng
发明人： Rustem F Ismagilov , Joshua David Tice , Cory John Gerdts , Bo Zheng
IPC分类号： C12Q1/68
CPC分类号： B01L3/502784 , B01D9/0072 , B01D2009/0086 , B01F5/0646 , B01F5/0647 , B01F13/0071 , B01J14/00 , B01J19/0046 , B01J19/0093 , B01J2219/00286 , B01J2219/00576 , B01J2219/00585 , B01J2219/00599 , B01J2219/00722 , B01J2219/00725 , B01J2219/00736 , B01J2219/00756 , B01J2219/00783 , B01J2219/00837 , B01J2219/0086 , B01J2219/00869 , B01J2219/00889 , B01J2219/00891 , B01J2219/00894 , B01J2219/00903 , B01J2219/00975 , B01J2219/00977 , B01L3/502715 , B01L3/50273 , B01L2200/0673 , B01L2200/12 , B01L2300/0867 , B01L2400/0487 , B82Y30/00 , C07K14/43 , C12N9/2462 , C12Q1/6806 , C12Y302/01017 , C30B7/14 , C30B29/54 , C30B29/58 , G01N1/28 , G01N35/08 , Y10T117/10 , Y10T137/0318 , Y10T436/117497 , Y10T436/143333 , Y10T436/25
摘要： The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.
摘要翻译：本发明提供微制造的底物和在这些底物内进行反应的方法。反应发生在在载体流体流中输送的塞子中。

3. 发明申请

US20120047175A1 Short Point-Of-Interest Title Generation 审中-公开
标题翻译：短期利益标题生成
公开(公告)号：US20120047175A1
公开(公告)日：2012-02-23
申请号：US13266614
申请日：2009-04-29
申请人： Jiang Qian , Vincent Zhou , Bo Zheng , Yu Zheng
发明人： Jiang Qian , Vincent Zhou , Bo Zheng , Yu Zheng
IPC分类号： G06F17/30
CPC分类号： G06F17/2745
摘要： Short POI titles are generated by removing unnecessary administrative area prefixes from existing POI titles and replacing necessary administrative area prefixes with shorter aliases. Administrative area prefixes are identified and analyzed to determine whether they are necessary. The analysis includes determining (1) whether the remainders with the prefixes excluded include a common suffix as a prefix, and (2) whether the remainders are unique in an applicable metropolis area. If a remainder does not include as a prefix a common suffix and is unique in the applicable metropolis area, the corresponding prefix is determined unnecessary and removed from the existing POI title to generate a short POI title. Otherwise, the corresponding prefix is determined necessary and replaced with a shorter alias to generate a short POI title.
摘要翻译：通过从现有POI标题中删除不必要的管理区域前缀，并用较短的别名替换必要的管理区域前缀来生成简短的POI标题。对行政区域前缀进行识别和分析，以确定它们是否必要。分析包括确定（1）排除前缀的余数是否包括作为前缀的公共后缀，以及（2）在适用的大都会区域中剩余部分是否是唯一的。如果余数不包括作为前缀的公共后缀，并且在适用的大都市区域中是唯一的，则相应的前缀被确定为不必要的并且从现有POI标题中移除以生成短的POI标题。否则，相应的前缀被确定为必需，并用较短的别名替换以生成短的POI标题。

4. 发明申请

US20120000422A1 APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：US20120000422A1
公开(公告)日：2012-01-05
申请号：US13232317
申请日：2011-09-14
申请人： Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
发明人： Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
IPC分类号： C23C16/455 , F17D1/20
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/4558 , H01J37/32449 , Y10T137/87265
摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.
摘要翻译：本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔，集中通道侧壁，集中通道。腔室盖组件还包括设置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS）与集中通道的流体通信。

5. 发明申请

US20100233026A1 DEVICE AND METHOD FOR PRESSURE-DRIVEN PLUG TRANSPORT AND REACTION 审中-公开
标题翻译：用于压力驱动输送和反应的装置和方法
公开(公告)号：US20100233026A1
公开(公告)日：2010-09-16
申请号：US12777099
申请日：2010-05-10
申请人： Rustem F. Ismagliov , Joshua David Tice , Cory John Gerdts , Bo Zheng
发明人： Rustem F. Ismagliov , Joshua David Tice , Cory John Gerdts , Bo Zheng
IPC分类号： G01N33/68
CPC分类号： B01L3/502784 , B01D9/0072 , B01D2009/0086 , B01F5/0646 , B01F5/0647 , B01F13/0071 , B01J14/00 , B01J19/0046 , B01J19/0093 , B01J2219/00286 , B01J2219/00576 , B01J2219/00585 , B01J2219/00599 , B01J2219/00722 , B01J2219/00725 , B01J2219/00736 , B01J2219/00756 , B01J2219/00783 , B01J2219/00837 , B01J2219/0086 , B01J2219/00869 , B01J2219/00889 , B01J2219/00891 , B01J2219/00894 , B01J2219/00903 , B01J2219/00975 , B01J2219/00977 , B01L3/502715 , B01L3/50273 , B01L2200/0673 , B01L2200/12 , B01L2300/0867 , B01L2400/0487 , B82Y30/00 , C07K14/43 , C12N9/2462 , C12Q1/6806 , C12Y302/01017 , C30B7/14 , C30B29/54 , C30B29/58 , G01N1/28 , G01N35/08 , Y10T117/10 , Y10T137/0318 , Y10T436/117497 , Y10T436/143333 , Y10T436/25
摘要： The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.
摘要翻译：本发明提供微制造的底物和在这些底物内进行反应的方法。反应发生在在载体流体流中输送的塞子中。

6. 发明授权

US07445980B2 Method and apparatus for improving stability of a 6T CMOS SRAM cell 有权
标题翻译：提高6T CMOS SRAM单元的稳定性的方法和装置
公开(公告)号：US07445980B2
公开(公告)日：2008-11-04
申请号：US11508009
申请日：2006-08-21
申请人： Suman Datta , Brian S. Doyle , Robert S. Chau , Jack Kavalieros , Bo Zheng , Scott A. Hareland
发明人： Suman Datta , Brian S. Doyle , Robert S. Chau , Jack Kavalieros , Bo Zheng , Scott A. Hareland
IPC分类号： H01L21/8238
CPC分类号： G11C11/412 , H01L21/845 , H01L27/11 , H01L27/1104 , H01L27/1211 , H01L29/42384 , H01L29/66795 , H01L29/785 , H01L29/7854
摘要： The present invention is a CMOS SRAM cell comprising two access devices, each access device comprised of a tri-gate transistor having a single fin; two pull-up devices, each pull-up device comprised of a tri-gate transistor having a single fin; and two pull-down devices, each pull-down device comprised of a tri-gate transistor having multiple fins. A method for manufacturing the CMOS SRAM cell, including the dual fin tri-gate transistor is also provided.
摘要翻译：本发明是包括两个存取装置的CMOS SRAM单元，每个存取装置由具有单个鳍片的三栅晶体管组成; 两个上拉装置，每个上拉装置由具有单个鳍片的三栅极晶体管组成; 和两个下拉器件，每个下拉器件由具有多个鳍片的三栅晶体管组成。还提供了一种用于制造包括双鳍三栅极晶体管的CMOS SRAM单元的方法。

7. 发明申请

US20070232072A1 FORMATION OF PROTECTION LAYER ON WAFER TO PREVENT STAIN FORMATION 审中-公开
标题翻译：形成保护层以防止污染形成
公开(公告)号：US20070232072A1
公开(公告)日：2007-10-04
申请号：US11567595
申请日：2006-12-06
申请人： Bo Zheng , Hung Hoang , Methelyn Murphy
发明人： Bo Zheng , Hung Hoang , Methelyn Murphy
IPC分类号： H01L21/302
CPC分类号： H01L21/30604 , H01L21/67051 , H01L21/6708
摘要： Embodiments of the invention generally provide an apparatus and a method for cleaning the bevel edge of a semiconductor substrate, while simultaneously providing a protection layer over the production surface of the substrate. The method for forming the protection layer generally includes rotating the semiconductor substrate on a substrate support member, dispensing an etching solution onto the bevel of the substrate with a first pivotally mounted fluid dispensing nozzle, and dispensing a protective fluid onto a central portion of the substrate simultaneously with the dispensing of the etching solution with a second pivotally mounted fluid dispensing nozzle.
摘要翻译：本发明的实施例通常提供一种用于清洁半导体衬底的斜边缘的装置和方法，同时在衬底的生产表面上提供保护层。形成保护层的方法通常包括将半导体衬底旋转在衬底支撑构件上，用第一枢转安装的流体分配喷嘴将蚀刻溶液分配到衬底的斜面上，并将保护流体分配到衬底的中心部分上同时用第二枢转安装的流体分配喷嘴分配蚀刻溶液。

8. 发明授权

US07230842B2 Memory cell having p-type pass device 有权
标题翻译：具有p型通过装置的存储单元
公开(公告)号：US07230842B2
公开(公告)日：2007-06-12
申请号：US11225912
申请日：2005-09-13
申请人： Muhammad M. Khellah , Dinesh Somasekhar , Nam Sung Kim , Yibin Ye , Vivek K. De , Kevin Zhang , Bo Zheng
发明人： Muhammad M. Khellah , Dinesh Somasekhar , Nam Sung Kim , Yibin Ye , Vivek K. De , Kevin Zhang , Bo Zheng
IPC分类号： G11C11/00
CPC分类号： G11C11/412 , Y10S257/903
摘要： For one disclosed embodiment, an apparatus comprises a first p-type device coupled between a cell voltage node and a storage node, an n-type device coupled between the storage node and a reference voltage node, and a second p-type device to couple the storage node to a bit line in response to a signal on a select line. At least one side of diffusion regions in a substrate to form both the first p-type device and the second p-type device are substantially aligned. Other embodiments are also disclosed.
摘要翻译：对于一个公开的实施例，一种装置包括耦合在单元电压节点和存储节点之间的第一p型装置，耦合在存储节点和参考电压节点之间的n型装置和耦合在第二p型装置之间存储节点响应于选择线上的信号到位线。衬底中的形成第一p型器件和第二p型器件的扩散区域的至少一侧基本对齐。还公开了其他实施例。

9. 发明申请

US20060094119A1 Microfluidic system 有权
公开(公告)号：US20060094119A1
公开(公告)日：2006-05-04
申请号：US11082187
申请日：2005-03-16
申请人： Rustem Ismagilov , Bo Zheng , Cory Gerdts
发明人： Rustem Ismagilov , Bo Zheng , Cory Gerdts
IPC分类号： B01L3/00
CPC分类号： B01F13/0071 , B01L3/06 , B01L3/502723 , B01L3/502784 , B01L3/527 , B01L2200/0673 , B01L2300/0816 , B01L2300/0864 , B01L2300/0867 , B01L2400/0406 , B01L2400/0409 , B01L2400/0415 , B01L2400/0433 , B01L2400/0487 , C30B7/00 , C30B29/58 , G01N35/08 , Y10T436/12
摘要： The present invention provides microfluidic technology enabling rapid and economical manipulation of reactions on the femtoliter to microliter scale.

10. 发明申请

US20050284754A1 Electric field reducing thrust plate 失效
标题翻译：电场减压推力板
公开(公告)号：US20050284754A1
公开(公告)日：2005-12-29
申请号：US10877137
申请日：2004-06-24
申请人： Harald Herchen , Dmitry Lubomirsky , Bo Zheng , Lily Pang
发明人： Harald Herchen , Dmitry Lubomirsky , Bo Zheng , Lily Pang
IPC分类号： C25D7/12 , C25D17/06 , H01L21/288
CPC分类号： C25D7/12 , C25D17/06 , H01L21/2885
摘要： A method and apparatus for an electrochemical processing cell that is configured to minimize bevel and backside deposition. The apparatus includes a contact ring assembly for supporting a substrate, a thrust plate movably positioned to engage a substrate positioned on the contact pins, and a lip seal member positioned to contact the thrust plate and the contact ring to prevent fluid flow therebetween. The lip seal includes a at least one bubble release channel formed therethrough. The method includes positioning an electric field barrier between a backside substrate engaging member and a frontside substrate supporting member to prevent electric field from traveling to the bevel and backside of the substrate. The electric field barrier including at least one bubble release channel formed therethrough.
摘要翻译：一种用于电化学处理电池的方法和装置，其被配置为最小化斜面和背面沉积。该装置包括用于支撑基板的接触环组件，可移动地定位成接合位于接触销上的基板的止动板，以及定位成接触推力板和接触环以防止其间流体流动的唇形密封件。唇形密封件包括通过其形成的至少一个气泡释放通道。该方法包括在背面基板接合构件和前侧基板支撑构件之间定位电场屏障，以防止电场行进到基板的斜面和背面。电场屏障包括至少一个通过其形成的气泡释放通道。

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